Abstract: The present invention relates to a heating method for a reactor (1) for epitaxial deposition; the reactor (1) comprises a susceptor (2) and an inductor (4); the inductor (4) is adapted to heat the susceptor (2) by electromagnetic induction when it is electrically powered; the inductor (4) comprises a plurality of turns (41-47); during heating of the susceptor (2) from a first temperature to a second temperature, the position of one or more turns (43) of the inductor (4) with respect to the susceptor (2) and to the other turns of the inductor (4) is changed. The turns (43) are actuated by means of an appropriate actuation system (61, 62, 63).

Abstract: The present invention relates to a reactor (1) for epitaxial deposition of semiconductor material on substrates (100), comprising: a reaction chamber (2) provided with a cavity (20) defined by a lower wall (21), an upper wall (22) and lateral walls (23, 24); a susceptor (3), positioned inside said cavity (20), and adapted to support and heat substrates (100) during epitaxial deposition; a heating system (6) adapted to heat said susceptor (3); an upper plate (7) that is positioned above said upper wall (22) and that overlies said susceptor (3) so that it reflects thermal radiation emitted by said susceptor (3) towards said susceptor (3). A liquid flow (LF) is provided in or on said upper plate (7) to cool said upper plate (7). A gaseous flow (GF) is provided between said upper wall (22) and said upper plate (7) to promote the transfer of heat from said upper wall (22) to said upper plate (7).

Abstract: The present invention relates to a heating method for a reactor (1) for epitaxial deposition; the reactor (1) comprises a susceptor (2) and an inductor (4); the inductor (4) is adapted to heat the susceptor (2) by electromagnetic induction when it is electrically powered; the inductor (4) comprises a plurality of turns (41-47); during heating of the susceptor (2) from a first temperature to a second temperature, the position of one or more turns (43) of the inductor (4) with respect to the susceptor (2) and to the other turns of the inductor (4) is changed. The turns (43) are actuated by means of an appropriate actuation system (61, 62, 63).

Abstract: The present invention concerns a susceptor comprising a disc-shaped portion (21) and a cylindrical or conical portion (22); the disc-shaped portion (21) is used to (directly or indirectly) support one or more substrates to be subjected to epitaxial deposition inside a reaction chamber of an epitaxial deposition reactor; the cylindrical or conical portion (22) is used to contribute to the heating of the disc-shaped portion (21); thanks to the configuration of the susceptor, it is possible to heat the disc-shaped portion (21) to a very uniform temperature; in fact, for example, the heating of the susceptor can be obtained through a first inductor (4) adapted to directly heat the disc-shaped portion (21), in particular its outer annular zone, and a second inductor (5) adapted to directly heat the cylindrical or conical portion (22) and indirectly heat the disc-shaped portion (21), in particular its central zone.

Abstract: The susceptor for an epitaxial deposition reactor comprises a disc-shaped portion (11, 12) which is adapted to be placed horizontally and which at the top has at least one cylindrical pocket (200) where a substrate (100) to be subjected to an epitaxial deposition process is placed; the pocket (200) has a bottom; one or more conduits (13) fluidically connected to an intake system (300) open on the bottom of the pocket (200); when a substrate (100) is placed on the bottom of the pocket (200) and the intake system (300) is active, the substrate (100) remains adhering to the bottom of the pocket (200).

Abstract: The present invention mainly relates to a susceptor for a reactor for epitaxial growth, comprising: a disc-shaped body (90) having a first face and a second face, wherein the first face comprises at least one zone (99) adapted to receive a substrate (2000) to be subjected to epitaxial growth and at least one supporting element (91+97) for the substrate (2000), located at the zone (99); the supporting element (91+97) comprises a circular disc (91) with an edge (97) which is raised with respect to the disc; the zone (99) may be a bottom of a recess (99) or a top of a relief of the disc-shaped body (90); the disc-shaped body (90) is solid at least at the recess (99) or relief; the edge is accessible from a side of the susceptor for handling the supporting element.

Abstract: The present invention relates to a reactor (1) for epitaxial deposition of semiconductor material on substrates (100), comprising: a reaction chamber (2) provided with a cavity (20) defined by a lower wall (21), an upper wall (22) and lateral walls (23, 24); a susceptor (3), positioned inside said cavity (20), and adapted to support and heat substrates (100) during epitaxial deposition; a heating system (6) adapted to heat said susceptor (3); an upper plate (7) that is positioned above said upper wall (22) and that overlies said susceptor (3) so that it reflects thermal radiation emitted by said susceptor (3) towards said susceptor (3). A liquid flow (LF) is provided in or on said upper plate (7) to cool said upper plate (7). A gaseous flow (GF) is provided between said upper wall (22) and said upper plate (7) to promote the transfer of heat from said upper wall (22) to said upper plate (7).

Abstract: A reaction chamber of a reactor for epitaxial growth includes a wall (1) with a recess and a susceptor (7) comprising a body and a relief. The body is placed in said recess in a rotational manner with respect to said wall (1). The chamber includes a discoid supporting element (8), having a shape adapted to be laid stably on said relief, having a size such to protrude radially from said relief and adapted to support one or more substrates to be subjected to epitaxial growth. The chamber also includes a flat covering (91, 92) located over said wall (1) and a hole (10) at said discoid supporting element (8). The shape of said hole (10) corresponds to the shape of said discoid supporting element (8). The covering (92) has at least one hollow guide (11, 12) for the passage of a device (16) for loading/unloading said discoid supporting element (8), wherein said hollow guide (11, 12) extends from an edge of said covering (92) to said hole (10).

Abstract: The present invention relates to a heating method for a reactor (1) for epitaxial deposition; the reactor (1) comprises a susceptor (2) and an inductor (4); the inductor (4) is adapted to heat the susceptor (2) by electromagnetic induction when it is electrically powered; the inductor (4) comprises a plurality of turns (41-47); during heating of the susceptor (2) from a first temperature to a second temperature, the position of one or more turns (43) of the inductor (4) with respect to the susceptor (2) and to the other turns of the inductor (4) is changed. The turns (43) are actuated by means of an appropriate actuation system (61,62, 63).

Abstract: The susceptor for an epitaxial deposition reactor comprises a disc-shaped portion (11, 12) which is adapted to be placed horizontally and which at the top has at least one cylindrical pocket (200) where a substrate (100) to be subjected to an epitaxial deposition process is placed; the pocket (200) has a bottom; one or more conduits (13) fluidically connected to an intake system (300) open on the bottom of the pocket (200); when a substrate (100) is placed on the bottom of the pocket (200) and the intake system (300) is active, the substrate (100) remains adhering to the bottom of the pocket (200).

Abstract: The tool (1) for manipulating substrates in an epitaxial reactor comprises an arm (2), a gripping disc (3) and a ball joint (4); said gripping disc (3) has a seat (5) on a lower face thereof for receiving a substrate (6) to be manipulated; said gripping disc (3) is mounted on the arm (2) through said ball joint (4) placed centrally with respect to said gripping disc (3); said gripping disc (3) is shaped so as to come into contact only with the upper edge of said substrate (6) to be manipulated; said gripping disc (3) has two degrees of freedom of rotational movement with respect to said arm (1) to allow adapting to the position of a substrate in a pocket of a susceptor of an epitaxial reactor.

Abstract: This disclosure concerns a susceptor for a reactor for epitaxial deposition comprising a body having the shape of a horizontal disc; the body has a first upper face, a second lower face and a vertical symmetry axis of the body; the first face has a plurality of disc-shaped recesses each of which with a centroid and with a symmetry axis of the recess which passes through said centroid; a section of each of said recesses taken along any vertical plane which comprises said vertical symmetry axis of the body is asymmetric with respect to any axis; a section of each of said recesses taken along any vertical plane which is parallel to said vertical symmetry axis of the body and which is perpendicular to a radius of the body passing through the centroid of the recess is symmetric with respect to a vertical axis.

Abstract: The tool (1) for manipulating substrates in an epitaxial reactor comprises an arm (2), a gripping disc (3) and a ball joint (4); said gripping disc (3) has a seat (5) on a lower face thereof for receiving a substrate (6) to be manipulated; said gripping disc (3) is mounted on the arm (2) through said ball joint (4) placed centrally with respect to said gripping disc (3); said gripping disc (3) is shaped so as to come into contact only with the upper edge of said substrate (6) to be manipulated; said gripping disc (3) has two degrees of freedom of rotational movement with respect to said arm (1) to allow adapting to the position of a substrate in a pocket of a susceptor of an epitaxial reactor.

Abstract: A reaction chamber of a reactor for epitaxial growth comprises:—a wall (1) with a recess,—a susceptor (7) comprising a body and a relief, wherein said body is placed in said recess in rotational manner with respect to said wall (1),—a discoid supporting element (8), having a shape adapted to be laid stably on said relief, having a size such to protrude radially from said relief and adapted to support one or more substrates to be subjected to epitaxial growth, and—a flat covering (91, 92) located over said wall (1) and a having hole (10) at said discoid supporting element (8); wherein the shape of said hole (10) corresponds to the shape of said discoid supporting element (8); wherein said covering (92) has at least one hollow guide (11, 12) for the passage of a device (16) for loading/unloading said discoid supporting element (8), wherein said hollow guide (11, 12) extends from an edge of said covering (92) to said hole (10).

Abstract: The present invention mainly relates to a susceptor for a reactor for epitaxial growth, comprising: a disc-shaped body (90) having a first face and a second face, wherein the first face comprises at least one zone (99) adapted to receive a substrate (2000) to be subjected to epitaxial growth and at least one supporting element (91+97) for the substrate (2000), located at the zone (99); the supporting element (91+97) comprises a circular disc (91) with an edge (97) which is raised with respect to the disc; the zone (99) may be a bottom of a recess (99) or a top of a relief of the disc-shaped body (90); the disc-shaped body (90) is solid at least at the recess (99) or relief; the edge is accessible from a side of the susceptor for handling the supporting element.

Abstract: The invention relates to a system for controlling the positioning of a susceptor (2) rotating in the reaction chamber (3) of an epitaxial reactor. The control is carried out on the basis of the different path of a laser beam transmitted by a source (15) when it is reflected by a pin (8) arranged on the susceptor (2).

Abstract: The present invention relates to a system for handling wafers (W) within a treatment apparatus (1) comprising a suction system (10) equipped with a suction inlet, a suction pipe (7) having a first end and a second end, said first end being connected to the suction inlet of the suction system (10), a tool (6) suitable for handling wafers (W) and for holding them by suction, and connected to the second end of the suction pipe (7), and a device for regulating the pressure in the suction pipe; the regulating device comprises a valve (8) connected to the suction pipe (7) and capable of opening when the pressure in the suction pipe (7) falls below a predetermined value.

Abstract: Reaction chamer (10) for an epitaxial reactor comprising a belljar (14) made of insulating, transparent and chemically resistant material, a susceptor (24) provided with disk-shaped cavities (34a-n) for receiving wafers (36a-n) of material to be treated and having an insulating and chemically resistant plate (40) arranged above it, and a diffuser (54) consisting of a plurality of outlet pipes (106a-f) mounted on a cap (52) fixed to an upper opening (50) of the belljar (14).

Abstract: The invention relates to a method for cooling the walls of the reaction chamber (2) of a reactor for chemical vapour deposition. The method consists in selectively cooling with water at least one predetermined zone of the wall of the chamber (2), to remove a different heat flow compared with the adjacent zones so as to obtain substantially uniform temperature distribution of the reaction chamber (2). In a preferred embodiment, the selectively-cooled zone is the zone above the susceptor (5) and is delimited by two ribs (8, 9). The invention also includes a reactor and a reaction chamber (2) for carrying out the cooling method.

Abstract: A tool (7) for handling a semiconductor material wafer (100) is designed to be used in an epitaxial growth station; the tool (7) comprises a disk (20) having an upper side (21) and a lower side (22), the lower side (22) being so shaped as to get in contact with the wafer (100) only along its edge (103); the disk (20) is provided internally with a suction chamber (24) that is in communication with the outside of the disk (20) through one or more suction holes (25) and in communication with a suction duct of an arm of a robot through a suction port (26); the disk (20) entirely covers the wafer (100) and the suction holes (25) open to the lower side (22)of the disk (20), whereby, when the wafer (100) is in contact with the lower side (22) of the disk (20), it can be held by the tool (7) through suction.