Abstract: The disc susceptor (1) for epitaxial growth reactors is of the type adapted to be heated by induction and is provided with an upper side (11) and with a lower side (12); at least one recess (2) adapted to house at least one corresponding substrate (3) to be subjected to epitaxial growth is formed in the upper side (11); indentations (4) such as to reduce locally the thickness of the susceptor (1) are provided on the lower side (12) in regions corresponding to the peripheral regions of the recess (2).

Abstract: A tool (7) for handling a semiconductor material wafer (100) is designed to be used in an epitaxial growth station; the tool (7) comprises a disk (20) having an upper side (21) and a lower side (22), the lower side (22) being so shaped as to get in contact with the wafer (100) only along its edge (103); the disk (20) is provided internally with a suction chamber (24) that is in communication with the outside of the disk (20) through one or more suction holes (25) and in communication with a suction duct of an arm of a robot through a suction port (26); the disk (20) entirely covers the wafer (100) and the suction holes (25) open to the lower side (22)of the disk (20), whereby, when the wafer (100) is in contact with the lower side (22) of the disk (20), it can be held by the tool (7) through suction.

Abstract: A device for handling substrates, used in an epitaxial apparatus or reactor (20) for chemical vapour deposition (CVD) onto the said substrates, comprises an internal robot (30) provided with means (60) for gripping and transporting substrates, which are in the form of semiconductor slices (24), in order to transfer them from cassettes (38, 40) containing the semiconductor slices (24) to be processed, the gripping and transportation means (60) having precisely the task of transporting the slices (24), which are present in a purging chamber (34) and supplied from a cassette (38) for storage of the said slices (24), from the purging chamber (34) into a reaction chamber (22) of the epitaxial reactor (20) and, more particularly, into seats (28a-e) formed on a flat disk-shaped susceptor (26) which is present in the reaction chamber (22) of the epitaxial reactor (20) and vice versa, from the reaction chamber (22) again passing through the purging chamber (34), to the cassettes (38, 40).