Patents by Inventor Viorel-Georgel Dumitru
Viorel-Georgel Dumitru has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240138275Abstract: One or more embodiments disclosed herein describe a nonvolatile, analog programmable resistive memory with a plurality of memory states. The programmable resistive memory includes a substrate, an IGZO resistive layer and electrical contacts. The electrical contacts are deposited on the IGZO layer, in the same plane. The electrical contacts may have various shapes in order to obtain spatially variable distances between the electrical contacts. The resistance of the resistive memory can be brought from an initial low value to a plurality of various higher values by applying electrical voltage pulses with various durations and various amplitudes and/or by applying one or more DC voltage sweeps. Also, the high voltage limit during the DC voltage sweeps could be set at values ranging from few volts to few tens of volts. In this manner, the IGZO programmable resistive memory could be set in a plurality of memory states.Type: ApplicationFiled: October 20, 2022Publication date: April 25, 2024Applicant: CYBERSWARM, INC.Inventors: Viorel-Georgel Dumitru, Octavian-Narcis Ionescu
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Publication number: 20240001804Abstract: A battery balancing system includes an energy balancing circuit. Multiple battery cells are coupled to the energy balancing circuit. A health assessment circuit is coupled to the multiple battery cells and configured to sense a state of health and a charge of each of the multiple battery cells. The balancing circuit switches energy between the multiple battery cells as a function of the sensed state of health and state of charge of each of the multiple battery cells to balance charge there between.Type: ApplicationFiled: September 15, 2023Publication date: January 4, 2024Inventors: Octavian Ionescu, Octavian Buiu, Ion Georgescu, Viorel Georgel Dumitru, Bogdan-Catalin Serban, Mihai Brezeanu, Matei Serbanescu
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Patent number: 11820253Abstract: A battery balancing system includes an energy balancing circuit. Multiple battery cells are coupled to the energy balancing circuit. A health assessment circuit is coupled to the multiple battery cells and configured to sense a state of health and a charge of each of the multiple battery cells. The balancing circuit switches energy between the multiple battery cells as a function of the sensed state of health and state of charge of each of the multiple battery cells to balance charge there between.Type: GrantFiled: April 7, 2021Date of Patent: November 21, 2023Assignee: HONEYWELL INTERNATIONAL INC.Inventors: Octavian Ionescu, Octavian Buiu, Ion Georgescu, Viorel Georgel Dumitru, Bogdan-Catalin Serban, Mihai Brezeanu, Matei Serbanescu
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Publication number: 20230360701Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.Type: ApplicationFiled: July 17, 2023Publication date: November 9, 2023Applicant: Cyberswarm, INC.Inventors: Viorel-Georgel DUMITRU, Cristina Besleaga stan, Alin Velea, Aurelian-Catalin Galca
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Patent number: 11705198Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.Type: GrantFiled: November 19, 2021Date of Patent: July 18, 2023Assignee: CYBERSWARM, INC.Inventors: Viorel-Georgel Dumitru, Cristina Besleaga Stan, Alin Velea, Aurelian-Catalin Galea
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Publication number: 20220343974Abstract: A phase-change material based resistive memory contains a resistive layer and two electrical contacts. After fabrication the memory is subjected to thermal treatment which initiates a transition toward a crystalline state favoring in this way the subsequent obtaining of a large number of resistive memory states.Type: ApplicationFiled: July 8, 2022Publication date: October 27, 2022Applicant: CYBERSWARM, INC.Inventors: Viorel-Georgel DUMITRU, Cristina BESLEAGA STAN, Alin VELEA, Aurelian-Catalin GALCA
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Patent number: 11455258Abstract: A system and method for generating encryption keys on multiple devices, without transferring the keys. At least one sender memristor is set using at least one sender setting value. At least one sender reading value is applied to the at least one sender memristor to generate at least one sender output value. A string of characters is determined from the at least one output value based on a sender table. Data is encrypted with the string of characters. The encrypted data is transmitted to a receiver through a first channel. The at least one sender setting value or the at least one sender reading value or both is transmitted to the receiver through a second channel different from the first channel. The at least one sender setting value or the at least one sender reading value or both is applied to at least one receiver memristor to generate at least one receiver output value. A receiver table is used to determine the string of characters from the at least one receiver output value.Type: GrantFiled: August 5, 2019Date of Patent: September 27, 2022Assignee: CYBERSWARM, INC.Inventors: Octavian Narcis Ionescu, Viorel-Georgel Dumitru, Constantin-Ionut Marica, Victor-Andrei Marica, Miha Tiberiu Luca, Stefan-Laurentiu Pircalabu
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Patent number: 11386953Abstract: A phase-change material based resistive memory contains a resistive layer and two electrical contacts. After fabrication the memory is subjected to thermal treatment which initiates a transition toward a crystalline state favoring in this way the subsequent obtaining of a large number of resistive memory states.Type: GrantFiled: October 22, 2019Date of Patent: July 12, 2022Assignee: CYBERSWARM, INC.Inventors: Viorel-Georgel Dumitru, Cristina Besleaga Stan, Alin Velea, Aurelian-Catalin Galca
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Patent number: 11356422Abstract: A system and method used for generating encryption keys on multiple devices and for encrypted data transfer between two or multiple devices. A sender system includes at least one sender device with nonlinear I-V characteristics. A receiver system includes at least one receiver device with nonlinear I-V characteristics. The at least one sender device with nonlinear I-V characteristics generates at least one sender output value used to create a string of characters or bits or bytes or numbers. The string of characters is used to encrypt data which is sent to the receiver device. The at least one receiver device with nonlinear I-V characteristics generates at least one receiver output value, and uses the at least one receiver output value to create the string of characters from the at least one receiver output value. A receiver processing unit generates the data from the encrypted data using the string of characters.Type: GrantFiled: November 1, 2019Date of Patent: June 7, 2022Assignee: CYBERSWARM, INC.Inventors: Viorel-Georgel Dumitru, Stefan-Laurentiu Pircalabu, Octavian-Narcis Ionescu, Constantin-Ionut Marica, Victor-Andrei Marica, Mihai Tiberiu Luca
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Publication number: 20220076747Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.Type: ApplicationFiled: November 19, 2021Publication date: March 10, 2022Applicant: CYBERSWARM, INC.Inventors: Viorel-Georgel DUMITRU, Cristina BESLEAGA STAN, Alin VELEA, Aurelian-Catalin Galca
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Patent number: 11183240Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.Type: GrantFiled: January 26, 2021Date of Patent: November 23, 2021Assignee: CYBERSWARM, INCInventors: Viorel-Georgel Dumitru, Cristina Besleaga Stan, Alin Velea, Aurelian-Catalin Galca
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Publication number: 20210221251Abstract: A battery balancing system includes an energy balancing circuit. Multiple battery cells are coupled to the energy balancing circuit. A health assessment circuit is coupled to the multiple battery cells and configured to sense a state of health and a charge of each of the multiple battery cells. The balancing circuit switches energy between the multiple battery cells as a function of the sensed state of health and state of charge of each of the multiple battery cells to balance charge there between.Type: ApplicationFiled: April 7, 2021Publication date: July 22, 2021Inventors: Octavian Ionescu, Octavian Buiu, Ion Georgescu, Viorel Georgel Dumitru, Bogdan-Catalin Serban, Mihai Brezeanu, Matei Serbanescu
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Patent number: 11034259Abstract: A battery balancing system includes an energy balancing circuit. Multiple battery cells are coupled to the energy balancing circuit. A health assessment circuit is coupled to the multiple battery cells and configured to sense a state of health and a charge of each of the multiple battery cells. The balancing circuit switches energy between the multiple battery cells as a function of the sensed state of health and state of charge of each of the multiple battery cells to balance charge there between.Type: GrantFiled: November 22, 2017Date of Patent: June 15, 2021Assignee: Honeywell International Inc.Inventors: Octavian Ionescu, Octavian Buiu, Ion Georgescu, Viorel Georgel Dumitru, Bogdan-Catalin Serban, Mihai Brezeanu, Matei Serbanescu
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Publication number: 20210151108Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.Type: ApplicationFiled: January 26, 2021Publication date: May 20, 2021Applicant: CYBERSWARM, INCInventors: Viorel-Georgel DUMITRU, Cristina BESLEAGA STAN, Alin VELEA, Aurelian-Catalin Galca
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Publication number: 20210136044Abstract: A system and method used for generating encryption keys on multiple devices and for encrypted data transfer between two or multiple devices. A sender system includes at least one sender device with nonlinear I-V characteristics. A receiver system includes at least one receiver device with nonlinear I-V characteristics. The at least one sender device with nonlinear I-V characteristics generates at least one sender output value used to create a string of characters or bits or bytes or numbers. The string of characters is used to encrypt data which is sent to the receiver device. The at least one receiver device with nonlinear I-V characteristics generates at least one receiver output value, and uses the at least one receiver output value to create the string of characters from the at least one receiver output value. A receiver processing unit generates the data from the encrypted data using the string of characters.Type: ApplicationFiled: November 1, 2019Publication date: May 6, 2021Applicant: CYBERSWARM, INC.Inventors: Viorel-Georgel Dumitru, Stefan-Laurentiu Pircalabu, Octavian-Narcis Ionescu, Constantin-Ionut Marica, Victor-Andrei Marica, Mihai Tiberiu Luca
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Publication number: 20210042243Abstract: A system and method for generating encryption keys on multiple devices, without transferring the keys. At least one sender memristor is set using at least one sender setting value. At least one sender reading value is applied to the at least one sender memristor to generate at least one sender output value. A string of characters is determined from the at least one output value based on a sender table. Data is encrypted with the string of characters. The encrypted data is transmitted to a receiver through a first channel. The at least one sender setting value or the at least one sender reading value or both is transmitted to the receiver through a second channel different from the first channel. The at least one sender setting value or the at least one sender reading value or both is applied to at least one receiver memristor to generate at least one receiver output value. A receiver table is used to determine the string of characters from the at least one receiver output value.Type: ApplicationFiled: August 5, 2019Publication date: February 11, 2021Applicant: CYBERSWARM, INC.Inventors: Octavian Narcis Ionescu, Viorel-Georgel Dumitru, Constantin-Ionut Marica, Victor-Andrei Marica, Miha Tiberiu Luca, Stefan-Laurentiu Pircalabu
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Patent number: 10902914Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.Type: GrantFiled: June 4, 2019Date of Patent: January 26, 2021Assignee: CYBERSWARM, INC.Inventors: Viorel-Georgel Dumitru, Cristina Besleaga Stan, Alin Velea, Aurelian-Catalin Galca
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Patent number: 10663425Abstract: A gas sensor includes a field effect transistor supported on an oxide layer of a substrate, the field effect transistor having a doped source (p+ doped for T-FET and n+ doped for FET) and an n+ doped drain separated by an channel region (intrinsic for T-FET or slightly p-doped for FET), and a floating gate separated from the channel region by a gate oxide, a passivation layer covering the floating gate, and a sensing layer supported by the passivation layer, the sensing layer comprising nanofibers.Type: GrantFiled: December 28, 2018Date of Patent: May 26, 2020Assignee: Honeywell International Inc.Inventors: Cornel P. Cobianu, Bogdan-Catalin Serban, Viorel Georgel Dumitru, Octavian Buiu, Alisa Stratulat, Mihai Brezeanu
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Publication number: 20200126614Abstract: A phase-change material based resistive memory contains a resistive layer and two electrical contacts. After fabrication the memory is subjected to thermal treatment which initiates a transition toward a crystalline state favoring in this way the subsequent obtaining of a large number of resistive memory states.Type: ApplicationFiled: October 22, 2019Publication date: April 23, 2020Applicant: CYBERSWARM, INC.Inventors: Viorel-Georgel DUMITRU, Cristina BESLEAGA STAN, Alin VELEA, Aurelian-Catalin GALCA
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Patent number: 10527598Abstract: A metal oxide heterostructure includes mixing a first precursor and a second precursor to form a precursor aqueous mixture, adding at least one constituent to the precursor aqueous mixture to form a first solution, adding a nanostructuring reagent to the first solution to form a second solution, sonochemically treating the second solution to provide a metal oxide powder, filtering, washing, and drying the metal oxide powder to provide a metal oxide nanocomposite heterostructure for a sensing layer of a hydrogen sulfide sensor. A method for forming a hydrogen sulfide sensor includes the metal oxide heterostructure, forming a sensing material, contacting the sensing material with interdigitated electrodes to form a sensing layer, and thermally consolidating the sensing layer to form the hydrogen sulfide sensor.Type: GrantFiled: August 9, 2018Date of Patent: January 7, 2020Assignee: HONEYWELL ROMANIA S.R.L.Inventors: Cornel P. Cobianu, Viorel Georgel Dumitru, Bogdan-Catalin Serban, Alisa Stratulat, Mihai Brezeanu, Octavian Buiu