Abstract: A synapse crossbar array device is provided. The synapse crossbar array device includes a plurality of Indium-Gallium-Zinc-Oxide (IGZO) thin film transistors (TFTs) and a plurality of IGZO resistive synapses. Each IGZO resistive synapse includes a IGZO resistive layer, a first electrical contact electrically coupled to one of the plurality of IGZO TFTs and a second electrical contact electrically connected to one of a plurality of column connection lines. The first electrical contact and the second electrical contact of each IGZO resistive synapse are disposed on the IGZO resistive layer of the resistive synapse. The synapse crossbar array device includes IGZO resistive synapses that have, each of them, an established resistance value. The synapse crossbar array may be fully transparent and may be integrated into the displays with which portable devices are provided.

Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.

Abstract: An illustrative humidity sensor may include a substrate and a sensing field effect transistor. The sensing field effect transistor may comprise a source formed on the substrate, a drain formed on the substrate, a gate, and a piezoelectric layer disposed over the gate. Another illustrative humidity sensor may comprise a substrate, a semi-conductor layer disposed over the substrate, a piezoelectric layer disposed over the semi-conductor layer, a first electrode disposed on the piezoelectric layer, and a second electrode disposed on the piezoelectric layer. In some instances, the piezoelectric layer may comprise aluminum nitride.

Abstract: A gas sensor includes a field effect transistor supported on an oxide layer of a substrate, the field effect transistor having a doped source (p+ doped for T-FET and n+ doped for FET) and an n+ doped drain separated by an channel region (intrinsic for T-FET or slightly p-doped for FET), and a floating gate separated from the channel region by a gate oxide, a passivation layer covering the floating gate, and a sensing layer supported by the passivation layer, the sensing layer comprising nanofibers.

Abstract: Various embodiments disclosed relate to anti-static compositions and gloves made from the same. In various embodiments, the present invention provides a doped polyaniline comprising a dopant that is a polyacrylic acid; a polymethacrylic acid; a sulfonatocalixarene; a cyclodextrin sulfate; a compound having the structure: wherein R2 is chosen from substituted or unsubstituted (C1-C10)hydrocarbyl- and substituted or unsubstituted (C1-C10)hydrocarbyl-O—, L1 is substituted or unsubstituted (C1-C10)hydrocarbylene, L2 is chosen from a bond, —O—, —O—C(O)—, and —NH—C(O)—, and n is about 1 to about 100,000; a salt thereof; or a combination thereof.

Abstract: A gas sensor includes a field effect transistor supported on an oxide layer of a substrate, the field effect transistor having a doped source (p+ doped for T-FET and n+ doped for FET) and an n+ doped drain separated by an channel region (intrinsic for T-FET or slightly p-doped for FET), and a floating gate separated from the channel region by a gate oxide, a passivation layer covering the floating gate, and a sensing layer supported by the passivation layer, the sensing layer comprising nanofibers.

Abstract: A metal oxide heterostructure includes mixing a first precursor and a second precursor to form a precursor aqueous mixture, adding at least one constituent to the precursor aqueous mixture to form a first solution, adding a nanostructuring reagent to the first solution to form a second solution, sonochemically treating the second solution to provide a metal oxide powder, filtering, washing, and drying the metal oxide powder to provide a metal oxide nanocomposite heterostructure for a sensing layer of a hydrogen sulfide sensor. A method for forming a hydrogen sulfide sensor includes the metal oxide heterostructure, forming a sensing material, contacting the sensing material with interdigitated electrodes to form a sensing layer, and thermally consolidating the sensing layer to form the hydrogen sulfide sensor.

Abstract: A metal oxide heterostructure includes mixing a first precursor and a second precursor to form a precursor aqueous mixture, adding at least one constituent to the precursor aqueous mixture to form a first solution, adding a nanostructuring reagent to the first solution to form a second solution, sonochemically treating the second solution to provide a metal oxide powder, filtering, washing, and drying the metal oxide powder to provide a metal oxide nanocomposite heterostructure for a sensing layer of a hydrogen sulfide sensor. A method for forming a hydrogen sulfide sensor includes the metal oxide heterostructure, forming a sensing material, contacting the sensing material with interdigitated electrodes to form a sensing layer, and thermally consolidating the sensing layer to form the hydrogen sulfide sensor.

Abstract: A battery balancing system includes an energy balancing circuit. Multiple battery cells are coupled to the energy balancing circuit. A health assessment circuit is coupled to the multiple battery cells and configured to sense a state of health and a charge of each of the multiple battery cells. The balancing circuit switches energy between the multiple battery cells as a function of the sensed state of health and state of charge of each of the multiple battery cells to balance charge there between.

Abstract: An illustrative humidity sensor may include a substrate and a sensing field effect transistor. The sensing field effect transistor may comprise a source formed on the substrate, a drain formed on the substrate, a gate, and a piezoelectric layer disposed over the gate. Another illustrative humidity sensor may comprise a substrate, a semi-conductor layer disposed over the substrate, a piezoelectric layer disposed over the semi-conductor layer, a first electrode disposed on the piezoelectric layer, and a second electrode disposed on the piezoelectric layer. In some instances, the piezoelectric layer may comprise aluminum nitride.

Abstract: A diamond based oxygen sensor is able to function in harsh environment conditions. The oxygen sensor includes a gateless field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, monocrystalline diamond layer exhibiting a 2-dimension hole gas effect. The oxygen sensor also includes a sensing layer comprising yttrium-stabilized zirconia deposited onto a surface of the gateless field effect transistor.

Abstract: Various embodiments disclosed relate to anti-static compositions and gloves made from the same. In various embodiments, the present invention provides a doped polyaniline comprising a dopant that is a polyacrylic acid; a polymethacrylic acid; a sulfonatocalixarene; a cyclodextrin sulfate; a compound having the structure: wherein R2 is chosen from substituted or unsubstituted (C1-C10)hydrocarbyl- and substituted or unsubstituted (C1-C10)hydrocarbyl-O—. L1 is substituted or unsubstituted (C1-C10)hydrocarbylene. L2 is chosen from a bond, —O—, —O—C(O)—, and —NH—C(O)—, and n is about 1 to about 100,000; a salt thereof; or a combination thereof.

Abstract: A relative humidity sensor is disclosed. The relative humidity sensor includes a first electrode and a second electrode disposed above a dielectric substrate. A sensitive layer is disposed above the first electrode and the second electrode, where the sensitive layer is formed from a doped conductive polymer.

Abstract: The present disclosure relates to a nanostructured palladium-based flammable gas detector synthesized using sonochemistry. The nanostructured palladium-based flammable gas detectors may use nanostructured sensing materials to allow reduction of power consumption, where the nanostructures reduce power consumption due to their large specific area and increased porosity.

Abstract: A gas sensor includes a field effect transistor supported on an oxide layer of a substrate, the field effect transistor having a doped source (p+ doped for T-FET and n+ doped for FET) and an n+ doped drain separated by an channel region (intrinsic for T-FET or slightly p-doped for FET), and a floating gate separated from the channel region by a gate oxide, a passivation layer covering the floating gate, and a sensing layer supported by the passivation layer, the sensing layer comprising nanofibers.

Abstract: A dynamic strain sensor includes a strain sensitive transistor and a light emitting diode coupled to the strain sensitive transistor. The dynamic strain sensor can include a piezoelectric layer incorporated into the structure of the strain sensitive transistor. The dynamic strain sensor can sense dynamic strain and can measure and monitor the dynamic strain wirelessly.

Abstract: The present disclosure relates to a touch sensor and touch sensitive display having a plurality of first and second conductive lines arranged substantially orthogonally with a sensing material to sense a change in capacitance between them. The first and second conductive lines and the sensing material defining an array of sensitive transistors.

Abstract: A diamond based oxygen sensor is able to function in harsh environment conditions. The oxygen sensor includes a gateless field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, monocrystalline diamond layer exhibiting a 2-dimension hole gas effect. The oxygen sensor also includes a sensing layer comprising yttrium-stabilized zirconia deposited onto a surface of the gateless field effect transistor.

Abstract: A diamond based oxygen sensor is able to function in harsh environment conditions. The oxygen sensor includes a gateless field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, monocrystalline diamond layer exhibiting a 2-dimension hole gas effect. The oxygen sensor also includes a sensing layer comprising yttrium-stabilized zirconia deposited onto a surface of the gateless field effect transistor.

Abstract: The present disclosure relates to a carbon dioxide sensor able to function in harsh environment, conditions. The carbon dioxide sensor can include a gate-less field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, single-crystal diamond layer exhibiting a 2-dimension hole gas effect, and a sensing layer comprising both a polymer and a hygroscopic material deposited onto a surface of the gate-less field effect transistor.