Patents by Inventor Vishal Sipani

Vishal Sipani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10840137
    Abstract: Methods of forming integrated circuits forming a first conductive structure at a first level of the integrated circuit, forming a first conductor at a second level of the integrated circuit to be in physical and electrical contact with the first conductive structure, forming a second conductor at the second level to be in physical and electrical contact with the first conductive structure and to be parallel to the first conductor, forming a third conductor at the second level to be isolated from the first conductive structure and to be parallel to the first conductor and to the second conductor, and forming a second conductive structure at a third level of the integrated circuit to be in physical and electrical contact with the second conductor and with the third conductor, wherein the second level is between the first level and the third level.
    Type: Grant
    Filed: July 24, 2019
    Date of Patent: November 17, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Tyler G. Hansen, Ming-Chuan Yang, Vishal Sipani
  • Patent number: 10741445
    Abstract: Integrated circuits include a first conductive structure at a first level of the integrated circuit, a second conductive structure at a second level of the integrated circuit, a first conductor at a third level of the integrated circuit between the first level and the second level, a second conductor at the third level and parallel to the first conductor, and a third conductor at the third level and parallel to the first conductor and to the second conductor. The first conductive structure is in physical and electrical contact with the first conductor and the second conductor. The second conductive structure is in physical and electrical contact with the second conductor and the third conductor.
    Type: Grant
    Filed: July 24, 2019
    Date of Patent: August 11, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Tyler G. Hansen, Ming-Chuan Yang, Vishal Sipani
  • Publication number: 20190348321
    Abstract: Methods of forming integrated circuits forming a first conductive structure at a first level of the integrated circuit, forming a first conductor at a second level of the integrated circuit to be in physical and electrical contact with the first conductive structure, forming a second conductor at the second level to be in physical and electrical contact with the first conductive structure and to be parallel to the first conductor, forming a third conductor at the second level to be isolated from the first conductive structure and to be parallel to the first conductor and to the second conductor, and forming a second conductive structure at a third level of the integrated circuit to be in physical and electrical contact with the second conductor and with the third conductor, wherein the second level is between the first level and the third level.
    Type: Application
    Filed: July 24, 2019
    Publication date: November 14, 2019
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Tyler G. Hansen, Ming-Chuan Yang, Vishal Sipani
  • Publication number: 20190348320
    Abstract: Integrated circuits include a first conductive structure at a first level of the integrated circuit, a second conductive structure at a second level of the integrated circuit, a first conductor at a third level of the integrated circuit between the first level and the second level, a second conductor at the third level and parallel to the first conductor, and a third conductor at the third level and parallel to the first conductor and to the second conductor. The first conductive structure is in physical and electrical contact with the first conductor and the second conductor. The second conductive structure is in physical and electrical contact with the second conductor and the third conductor.
    Type: Application
    Filed: July 24, 2019
    Publication date: November 14, 2019
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Tyler G. Hansen, Ming-Chuan Yang, Vishal Sipani
  • Patent number: 10424506
    Abstract: Integrated circuits, as well as methods of their formation, include a first conductive structure at a first level of the integrated circuit, a second conductive structure at a second level of the integrated circuit, a first conductor at a third level of the integrated circuit between the first level and the second level, a second conductor at the third level and parallel to the first conductor, and a third conductor at the third level and parallel to the first conductor and to the second conductor. The first conductive structure is in physical and electrical contact with the first conductor and the second conductor. The second conductive structure is in physical and electrical contact with the second conductor and the third conductor.
    Type: Grant
    Filed: May 8, 2018
    Date of Patent: September 24, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Tyler G. Hansen, Ming-Chuan Yang, Vishal Sipani
  • Patent number: 10217706
    Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: February 26, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
  • Publication number: 20180254214
    Abstract: Integrated circuits, as well as methods of their formation, include a first conductive structure at a first level of the integrated circuit, a second conductive structure at a second level of the integrated circuit, a first conductor at a third level of the integrated circuit between the first level and the second level, a second conductor at the third level and parallel to the first conductor, and a third conductor at the third level and parallel to the first conductor and to the second conductor. The first conductive structure is in physical and electrical contact with the first conductor and the second conductor. The second conductive structure is in physical and electrical contact with the second conductor and the third conductor.
    Type: Application
    Filed: May 8, 2018
    Publication date: September 6, 2018
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Tyler G. Hansen, Ming-Chuan Yang, Vishal Sipani
  • Patent number: 9972532
    Abstract: An embodiment of an interconnect structure for an integrated circuit may include a first conductor coupled to circuitry, a second conductor, a dielectric between the first and second conductors, and a conductive underpass under and coupled to the first and second conductors and passing under the dielectric or a conductive overpass over and coupled to the first and second conductors and passing over the dielectric. The second conductor would be floating but for its coupling to the conductive underpass or the conductive overpass. In other embodiments, another dielectric might be included that would electrically isolate the second conductor but for its coupling to the conductive underpass or the conductive overpass.
    Type: Grant
    Filed: October 20, 2015
    Date of Patent: May 15, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Tyler G. Hansen, Ming-Chuan Yang, Vishal Sipani
  • Publication number: 20170352616
    Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.
    Type: Application
    Filed: August 24, 2017
    Publication date: December 7, 2017
    Applicant: Micron Technology, Inc.
    Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
  • Patent number: 9780029
    Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: October 3, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
  • Patent number: 9741580
    Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: August 22, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Vishal Sipani, Anton J. deVilliers, William R. Brown, Shane J. Trapp, Ranjan Khurana, Kevin R. Shea
  • Patent number: 9358753
    Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.
    Type: Grant
    Filed: July 1, 2015
    Date of Patent: June 7, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Vishal Sipani, David A. Kewley, Kyle Armstrong, Michael Dean Van Patten, Michael D. Hyatt
  • Patent number: 9330914
    Abstract: A method including forming a line pattern in a substrate includes using a plurality of longitudinally spaced projecting features formed along respective guide lines as a template in forming a plurality of directed self-assembled (DSA) lines that individually comprise at least one of (a): the spaced projecting features and DSA material longitudinally there-between, and (b): are laterally between and laterally spaced from immediately adjacent of the guide lines. Substrate material elevationally inward of and laterally between the DSA lines may be processed using the DSA lines as a mask.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: May 3, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Scott L. Light, Vishal Sipani, Michael D. Hyatt
  • Publication number: 20160042995
    Abstract: An embodiment of an interconnect structure for an integrated circuit may include a first conductor coupled to circuitry, a second conductor, a dielectric between the first and second conductors, and a conductive underpass under and coupled to the first and second conductors and passing under the dielectric or a conductive overpass over and coupled to the first and second conductors and passing over the dielectric. The second conductor would be floating but for its coupling to the conductive underpass or the conductive overpass. In other embodiments, another dielectric might be included that would electrically isolate the second conductor but for its coupling to the conductive underpass or the conductive overpass.
    Type: Application
    Filed: October 20, 2015
    Publication date: February 11, 2016
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Tyler G. Hansen, Ming-Chuan Yang, Vishal Sipani
  • Publication number: 20150321447
    Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.
    Type: Application
    Filed: July 1, 2015
    Publication date: November 12, 2015
    Inventors: Vishal Sipani, David A. Kewley, Kyle Armstrong, Michael Dean Van Patten, Michael D. Hyatt
  • Patent number: 9177910
    Abstract: An embodiment of an interconnect structure for an integrated circuit may include a first conductor coupled to circuitry, a second conductor, a dielectric between the first and second conductors, and a conductive underpass under and coupled to the first and second conductors and passing under the dielectric or a conductive overpass over and coupled to the first and second conductors and passing over the dielectric. The second conductor would be floating but for its coupling to the conductive underpass or the conductive overpass. In other embodiments, another dielectric might be included that would electrically isolate the second conductor but for its coupling to the conductive underpass or the conductive overpass.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: November 3, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Tyler G. Hansen, Ming-Chuan Yang, Vishal Sipani
  • Patent number: 9123722
    Abstract: Some embodiments include methods of forming interconnects. A first circuitry level may be formed, and a first dielectric region may be formed over such first level. A second level of circuitry may be formed over the first dielectric region. An interconnect may be formed to extend through such second level. A second dielectric region may be formed over the second level of circuitry, and a third level of circuitry may be formed over the second dielectric region. The third level of circuitry may be electrically connected to the first level of circuitry through the interconnect. Some embodiments include constructions having interconnects extending from a first level of circuitry, through an opening in a second level of circuitry, and to a third level of circuitry; with an individual interconnect including multiple separate electrically conductive posts.
    Type: Grant
    Filed: February 10, 2014
    Date of Patent: September 1, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Ming-Chuan Yang, Zengtao T. Liu, Vishal Sipani
  • Publication number: 20150235938
    Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.
    Type: Application
    Filed: April 29, 2015
    Publication date: August 20, 2015
    Inventors: Vishal Sipani, Kyle Armstrong, Michael D. Hyatt, Michael Dean Van Patten, David A. Kewley, Ming-Chuan Yang
  • Patent number: 9102121
    Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.
    Type: Grant
    Filed: May 3, 2012
    Date of Patent: August 11, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Vishal Sipani, David A. Kewley, Kyle Armstrong, Michael Dean Van Patten, Michael D. Hyatt
  • Publication number: 20150206760
    Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.
    Type: Application
    Filed: March 31, 2015
    Publication date: July 23, 2015
    Inventors: Vishal Sipani, Anton J. deVilliers, William R. Brown, Shane J. Trapp, Ranjan Khurana, Kevin R. Shea