Patents by Inventor Vishal Sipani

Vishal Sipani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130295335
    Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.
    Type: Application
    Filed: May 3, 2012
    Publication date: November 7, 2013
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Vishal Sipani, David A. Kewley, Kyle Armstrong, Michael Dean Van Patten, Michael D. Hyatt
  • Publication number: 20130277822
    Abstract: An embodiment of an interconnect structure for an integrated circuit may include a first conductor coupled to circuitry, a second conductor, a dielectric between the first and second conductors, and a conductive underpass under and coupled to the first and second conductors and passing under the dielectric or a conductive overpass over and coupled to the first and second conductors and passing over the dielectric. The second conductor would be floating but for its coupling to the conductive underpass or the conductive overpass. In other embodiments, another dielectric might be included that would electrically isolate the second conductor but for its coupling to the conductive underpass or the conductive overpass.
    Type: Application
    Filed: April 18, 2012
    Publication date: October 24, 2013
    Inventors: Tyler G. HANSEN, Ming-Chuan Yang, Vishal Sipani
  • Patent number: 8530352
    Abstract: Some embodiments include methods of forming openings. For instance, a construction may have a material over a plurality of electrically conductive lines. A plurality of annular features may be formed over the material, with the annular features crossing the lines. A patterned mask may be formed over the annular features, with the patterned mask leaving segments of the annular features exposed through a window in the patterned mask. The exposed segments of the annular features may define a plurality of openings, and such openings may be transferred into the material to form openings extending to the electrically conductive lines.
    Type: Grant
    Filed: February 18, 2013
    Date of Patent: September 10, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Vishal Sipani, Baosuo Zhou, Ming-Chuan Yang
  • Patent number: 8389407
    Abstract: Some embodiments include methods of forming openings. For instance, a construction may have a material over a plurality of electrically conductive lines. A plurality of annular features may be formed over the material, with the annular features crossing the lines. A patterned mask may be formed over the annular features, with the patterned mask leaving segments of the annular features exposed through a window in the patterned mask. The exposed segments of the annular features may define a plurality of openings, and such openings may be transferred into the material to form openings extending to the electrically conductive lines.
    Type: Grant
    Filed: June 7, 2012
    Date of Patent: March 5, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Vishal Sipani, Baosuo Zhou, Ming-Chuan Yang
  • Publication number: 20130043597
    Abstract: Some embodiments include methods of forming interconnects. A first circuitry level may be formed, and a first dielectric region may be formed over such first level. A second level of circuitry may be formed over the first dielectric region. An interconnect may be formed to extend through such second level. A second dielectric region may be formed over the second level of circuitry, and a third level of circuitry may be formed over the second dielectric region. The third level of circuitry may be electrically connected to the first level of circuitry through the interconnect. Some embodiments include constructions having interconnects extending from a first level of circuitry, through an opening in a second level of circuitry, and to a third level of circuitry; with an individual interconnect including multiple separate electrically conductive posts.
    Type: Application
    Filed: August 17, 2011
    Publication date: February 21, 2013
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Ming-Chuan Yang, Zengtao T. Liu, Vishal Sipani
  • Publication number: 20120244708
    Abstract: Some embodiments include methods of forming openings. For instance, a construction may have a material over a plurality of electrically conductive lines. A plurality of annular features may be formed over the material, with the annular features crossing the lines. A patterned mask may be formed over the annular features, with the patterned mask leaving segments of the annular features exposed through a window in the patterned mask. The exposed segments of the annular features may define a plurality of openings, and such openings may be transferred into the material to form openings extending to the electrically conductive lines.
    Type: Application
    Filed: June 7, 2012
    Publication date: September 27, 2012
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Vishal Sipani, Baosuo Zhou, Ming-Chuan Yang
  • Patent number: 8216939
    Abstract: Some embodiments include methods of forming openings. For instance, a construction may have a material over a plurality of electrically conductive lines. A plurality of annular features may be formed over the material, with the annular features crossing the lines. A patterned mask may be formed over the annular features, with the patterned mask leaving segments of the annular features exposed through a window in the patterned mask. The exposed segments of the annular features may define a plurality of openings, and such openings may be transferred into the material to form openings extending to the electrically conductive lines.
    Type: Grant
    Filed: August 20, 2010
    Date of Patent: July 10, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Vishal Sipani, Baosuo Zhou, Ming-Chuan Yang
  • Publication number: 20120045896
    Abstract: Some embodiments include methods of forming openings. For instance, a construction may have a material over a plurality of electrically conductive lines. A plurality of annular features may be formed over the material, with the annular features crossing the lines. A patterned mask may be formed over the annular features, with the patterned mask leaving segments of the annular features exposed through a window in the patterned mask. The exposed segments of the annular features may define a plurality of openings, and such openings may be transferred into the material to form openings extending to the electrically conductive lines.
    Type: Application
    Filed: August 20, 2010
    Publication date: February 23, 2012
    Inventors: Vishal Sipani, Baosuo Zhou, Ming-Chuan Yang