Patents by Inventor Vivek De

Vivek De has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11940824
    Abstract: Embodiments of the present disclosure describe methods, apparatuses, and systems for hybrid low dropout regulator (LDO) architecture and realization to provide high power supply rejection ratio (PSRR) and high conversion efficiency (CE), and other benefits. The hybrid LDO may be coupled with dual rails for its analog LDO branch and digital LDO respectively to achieve high PSRR and high CE by utilizing the hybrid architecture with several feedback loops. Other embodiments may be described and claimed.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: March 26, 2024
    Assignee: Intel Corporation
    Inventors: Xiaosen Liu, Harish Krishnamurthy, Krishnan Ravichandran, Vivek De, Scott Chiu, Claudia Patricia Barrera Gonzalez, Jing Han, Rajasekhara Madhusudan Narayana Bhatla
  • Patent number: 11669114
    Abstract: In one embodiment, a processor includes a minimum energy point (MEP) controller to: generate a change in thermal tracking information, based at least in part on prior and current thermal information; generate a change in activity tracking information, based at least in part on prior activity information and current activity information; and determine a MEP performance state based at least in part on the change in thermal tracking information and the change in activity tracking information. Other embodiments are described and claimed.
    Type: Grant
    Filed: November 17, 2021
    Date of Patent: June 6, 2023
    Assignee: Intel Corporation
    Inventors: Sriram R. Vangal, Jayanth Mallanayakanahalli Devaraju, Vivek De, Robert Milstrey, Stephen H. Gunther
  • Patent number: 11444532
    Abstract: A 3-level ripple quantization scheme provides power transistor (MOS) strength-tuning mechanism focused on the transient clamp period. The 3-level ripple quantization scheme solves the digital low dropout's (D-LDO's) tradeoff between silicon area (e.g., decoupling capacitor size), quiescent power consumption (e.g., speed of comparators), wide load range, and optimal output ripple. The 3-level ripple quantization scheme eliminates oscillation risk from either wide dynamic range or parasitic by exploiting asynchronous pulse patterns. As such, ripple magnitude for both fast di/dt loading events and various steady-state scenarios are shrunk effectively, resulting significant efficiency benefits.
    Type: Grant
    Filed: December 26, 2019
    Date of Patent: September 13, 2022
    Assignee: Intel Corporation
    Inventors: Xiaosen Liu, Krishnan Ravichandran, Harish Krishnamurthy, Vivek De
  • Patent number: 11411491
    Abstract: Voltage dividing circuitry is provided for use in a voltage converter for converting at least one input Direct Current, DC voltage to a plurality of output DC voltages. The voltage dividing circuitry including a voltage input port to receive an input DC voltage and an inductor having an input-side switch node and an output-side switch node. The output side switch node is connectable to one of a plurality of voltage output ports to supply a converted value of the input DC voltage as an output DC voltage. The flying capacitor interface has a plurality of switching elements and at least one flying capacitor, the flying capacitor interface to divide the input DC voltage to provide a predetermined fixed ratio of the input DC voltage at the input-side switch node of the inductor. A voltage converter and a power management integrated circuit having the voltage dividing circuitry are also provided.
    Type: Grant
    Filed: September 29, 2017
    Date of Patent: August 9, 2022
    Assignee: Intel Corporation
    Inventors: Vivek De, Krishnan Ravichandran, Harish Krishnamurthy, Khondker Ahmed, Sriram Vangal, Vaibhav Vaidya, Turbo Majumder, Christopher Schaef, Suhwan Kim, Xiaosen Liu, Nachiket Desai
  • Patent number: 11281281
    Abstract: Circuitry is provided to control a performance level of a processing device depending on two or more operating points of the processing device. An operating point has a corresponding frequency and a corresponding voltage. The performance-level control circuitry arranged to cross-multiply parameters corresponding to a first operating point and a second, different operating point of the processing device. A relative energy expenditure of the first operating point and the second operating point is determined based on the cross multiplication. An operating point of the processing device is selected depending on the determined relative energy expenditure. An apparatus having the performance level control circuitry, machine readable instructions for implementing the performance level control and a corresponding method are also provided.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: March 22, 2022
    Assignee: Intel Corporation
    Inventors: Jayanth M. Devaraju, Vivek De, Sriram Vangal
  • Publication number: 20220075400
    Abstract: In one embodiment, a processor includes a minimum energy point (MEP) controller to: generate a change in thermal tracking information, based at least in part on prior and current thermal information; generate a change in activity tracking information, based at least in part on prior activity information and current activity information; and determine a MEP performance state based at least in part on the change in thermal tracking information and the change in activity tracking information. Other embodiments are described and claimed.
    Type: Application
    Filed: November 17, 2021
    Publication date: March 10, 2022
    Inventors: Sriram R. Vangal, Jayanth Mallanayakanahalli Devaraju, Vivek De, Robert Milstrey, Stephen H. Gunther
  • Patent number: 11231731
    Abstract: In one embodiment, a processor includes a minimum energy point (MEP) controller to: generate a change in thermal tracking information, based at least in part on prior and current thermal information; generate a change in activity tracking information, based at least in part on prior activity information and current activity information; and determine a MEP performance state based at least in part on the change in thermal tracking information and the change in activity tracking information. Other embodiments are described and claimed.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: January 25, 2022
    Assignee: Intel Corporation
    Inventors: Sriram R. Vangal, Jayanth Mallanayakanahalli Devaraju, Vivek De, Robert Milstrey, Stephen H. Gunther
  • Publication number: 20210407168
    Abstract: A method comprising: dividing a 3D space into a voxel grid comprising a plurality of voxels; associating a plurality of distance values with the plurality of voxels, each distance value based on a distance to a boundary of an object; selecting an approximate interpolation mode for stepping a ray through a first one or more voxels of the 3D space responsive to the first one or more voxels having distance values greater than a threshold; and detecting the ray reaching a second one or more voxels having distance values less than the first threshold; and responsively selecting a precise interpolation mode for stepping the ray through the second one or more voxels.
    Type: Application
    Filed: October 14, 2020
    Publication date: December 30, 2021
    Inventors: Vivek De, Ram Krishnamurthy, Amit Agarwal, Steven Hsu, Monodeep Kar
  • Publication number: 20210407039
    Abstract: A method comprising: dividing a 3D space into a voxel grid comprising a plurality of voxels; associating a plurality of distance values with the plurality of voxels, each distance value based on a distance to a boundary of an object; selecting an approximate interpolation mode for stepping a ray through a first one or more voxels of the 3D space responsive to the first one or more voxels having distance values greater than a threshold; and detecting the ray reaching a second one or more voxels having distance values less than the first threshold; and responsively selecting a precise interpolation mode for stepping the ray through the second one or more voxels.
    Type: Application
    Filed: June 30, 2020
    Publication date: December 30, 2021
    Inventors: Vivek De, Ram Krishnamurthy, Amit Agarwal, Steven Hsu, Monodeep Kar
  • Publication number: 20210203228
    Abstract: A 3-level ripple quantization scheme provides power transistor (MOS) strength-tuning mechanism focused on the transient clamp period. The 3-level ripple quantization scheme solves the digital low dropout's (D-LDO's) tradeoff between silicon area (e.g., decoupling capacitor size), quiescent power consumption (e.g., speed of comparators), wide load range, and optimal output ripple. The 3-level ripple quantization scheme eliminates oscillation risk from either wide dynamic range or parasitic by exploiting asynchronous pulse patterns. As such, ripple magnitude for both fast di/dt loading events and various steady-state scenarios are shrunk effectively, resulting significant efficiency benefits.
    Type: Application
    Filed: December 26, 2019
    Publication date: July 1, 2021
    Applicant: Intel Corporation
    Inventors: Xiaosen Liu, Krishnan Ravichandran, Harish Krishnamurthy, Vivek De
  • Publication number: 20210103308
    Abstract: Embodiments of the present disclosure describe methods, apparatuses, and systems for hybrid low dropout regulator (LDO) architecture and realization to provide high power supply rejection ratio (PSRR) and high conversion efficiency (CE), and other benefits. The hybrid LDO may be coupled with dual rails for its analog LDO branch and digital LDO respectively to achieve high PSRR and high CE by utilizing the hybrid architecture with several feedback loops. Other embodiments may be described and claimed.
    Type: Application
    Filed: November 20, 2020
    Publication date: April 8, 2021
    Inventors: Xiaosen Liu, Harish Krishnamurthy, Krishnan Ravichandran, Vivek De, Scott Chiu, Claudia Patricia Barrera Gonzalez, Jing Han, Rajasekhara Madhusudan Narayana Bhatla
  • Publication number: 20210081017
    Abstract: Circuitry is provided to control a performance level of a processing device depending on two or more operating points of the processing device. An operating point has a corresponding frequency and a corresponding voltage. The performance-level control circuitry arranged to cross-multiply parameters corresponding to a first operating point and a second, different operating point of the processing device. A relative energy expenditure of the first operating point and the second operating point is determined based on the cross multiplication. An operating point of the processing device is selected depending on the determined relative energy expenditure. An apparatus having the performance level control circuitry, machine readable instructions for implementing the performance level control and a corresponding method are also provided.
    Type: Application
    Filed: February 28, 2018
    Publication date: March 18, 2021
    Inventors: Jayanth M. DEVARAJU, Vivek DE, Sriram VANGAL
  • Patent number: 10897364
    Abstract: Spin Hall Effect (SHE) magneto junction memory cells (e.g., magnetic tunneling junction (MTJ) or spin valve based memory cells) are used to implement high entropy physically unclonable function (PUF) arrays utilizing stochastics interactions of both parameter variations of the SHE-MTJ structures as well as random thermal noises. An apparatus is provided which comprises: an array of PUF devices, wherein an individual device of the array comprises a magnetic junction and an interconnect, wherein the interconnect comprises a spin orbit coupling material; a circuitry to sense values stored in the array, and to provide an output; and a comparator to compare the output with a code.
    Type: Grant
    Filed: December 18, 2017
    Date of Patent: January 19, 2021
    Assignee: Intel Corporation
    Inventors: Vivek De, Krishnan Ravichandran, Harish Krishnamurthy, Khondker Ahmed, Sriram Vangal, Vaibhav Vaidya, Turbo Majumder, Christopher Schaef, Suhwan Kim, Xiaosen Liu, Nachiket Desai
  • Publication number: 20200409399
    Abstract: In one embodiment, a processor includes a minimum energy point (MEP) controller to: generate a change in thermal tracking information, based at least in part on prior and current thermal information; generate a change in activity tracking information, based at least in part on prior activity information and current activity information; and determine a MEP performance state based at least in part on the change in thermal tracking information and the change in activity tracking information. Other embodiments are described and claimed.
    Type: Application
    Filed: June 28, 2019
    Publication date: December 31, 2020
    Inventors: Sriram R. Vangal, Jayanth Mallanayakanahalli Devaraju, Vivek De, Robert Milstrey, Stephen H. Gunther
  • Patent number: 10845831
    Abstract: Embodiments of the present disclosure describe methods, apparatuses, and systems for hybrid low dropout regulator (LDO) architecture and realization to provide high power supply rejection ratio (PSRR) and high conversion efficiency (CE), and other benefits. The hybrid LDO may be coupled with dual rails for its analog LDO branch and digital LDO respectively to achieve high PSRR and high CE by utilizing the hybrid architecture with several feedback loops. Other embodiments may be described and claimed.
    Type: Grant
    Filed: June 24, 2019
    Date of Patent: November 24, 2020
    Assignee: Intel Corporation
    Inventors: Xiaosen Liu, Harish Krishnamurthy, Krishnan Ravichandran, Vivek De, Scott Chiu, Claudia Patricia Barrera Gonzalez, Jing Han, Rajasekhara Madhusudan Narayana Bhatla
  • Publication number: 20200350817
    Abstract: Voltage dividing circuitry is provided for use in a voltage converter for converting at least one input Direct Current, DC voltage to a plurality of output DC voltages. The voltage dividing circuitry including a voltage input port to receive an input DC voltage and an inductor having an input-side switch node and an output-side switch node. The output side switch node is connectable to one of a plurality of voltage output ports to supply a converted value of the input DC voltage as an output DC voltage. The flying capacitor interface has a plurality of switching elements and at least one flying capacitor, to divide the input DC voltage to provide a predetermined fixed ratio of the input DC voltage at the input-side switch node of the inductor. A voltage converter and a power management integrated circuit having the voltage dividing circuitry are also provided.
    Type: Application
    Filed: September 29, 2017
    Publication date: November 5, 2020
    Inventors: Vivek DE, Krishnan RAVICHANDRAN, Harish KRISHNAMURTHY, Khondker AHMED, Sriram VANGAL, Vaibhav VAIDYA, Turbo MAJUMDER, Christopher SCHAEF, Suhwan KIM, Xiaosen LIU, Nachiket DESAI
  • Patent number: 10825511
    Abstract: Techniques and mechanisms for changing a consistency with which a cell circuit (“cell”) settles into a given state. In one embodiment, a cell settles into a preferred state based on a relative polarity between respective voltages of a first rail and a second rail. Based on the preferred state, a hot carrier injection (HCI) stress is applied to change a likelihood of the cell settling into the preferred state. Applying the HCI stress includes driving off-currents of two PMOS transistors of the cell while the relative polarity is reversed. In another embodiment, a cell array comprises multiple cells which are each classified as being a respective one of a physically unclonable function (PUF) type or a random number generator (RNG) type. A cell is selected for biasing, and a stress is applied, based on each of: that cell's preferred state, that cell's classification, and another cell's classification.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: November 3, 2020
    Assignee: Intel Corporation
    Inventors: Vivek De, Sanu Mathew, Sudhir Satpathy, Vikram Suresh, Raghavan Kumar
  • Publication number: 20200312404
    Abstract: Techniques and mechanisms for changing a consistency with which a cell circuit (“cell”) settles into a given state. In one embodiment, a cell settles into a preferred state based on a relative polarity between respective voltages of a first rail and a second rail. Based on the preferred state, a hot carrier injection (HCI) stress is applied to change a likelihood of the cell settling into the preferred state. Applying the HCI stress includes driving off-currents of two PMOS transistors of the cell while the relative polarity is reversed. In another embodiment, a cell array comprises multiple cells which are each classified as being a respective one of a physically unclonable function (PUF) type or a random number generator (RNG) type. A cell is selected for biasing, and a stress is applied, based on each of: that cell's preferred state, that cell's classification, and another cell's classification.
    Type: Application
    Filed: May 20, 2019
    Publication date: October 1, 2020
    Applicant: Intel Corporation
    Inventors: Vivek De, Sanu Mathew, Sudhir Satpathy, Vikram Suresh, Raghavan Kumar
  • Patent number: 10784865
    Abstract: A minimum delay error apparatus such as a minimum delay error detection, prediction, correction, repair, prevention, and/or avoidance apparatus includes a minimum delay path replica circuit. The minimum delay path replica circuit can detect or predict, and subsequently can correct or avoid, minimum delay errors in data paths of digital circuits using pulsed latches.
    Type: Grant
    Filed: May 15, 2019
    Date of Patent: September 22, 2020
    Assignee: Intel Corporation
    Inventors: Pascal Meinerzhagen, Vivek De, Muhammad Khellah
  • Patent number: 10739804
    Abstract: Various embodiments of the invention may be used to find a combination of voltage and frequency that results in a minimum amount of energy consumption in a digital system, including energy consumed by the system's voltage regulator (VR). The process may involve finding a separate point of minimum energy consumption for each of several different modes of the VR, where a mode is the ratio of Vin to Vout for that VR. The smallest value of those points may then be selected as the overall minimum. The process for making this determination may be performed in situ while the device is in operation, and may encompass changes in operational temperature, load, and process variations.
    Type: Grant
    Filed: September 22, 2017
    Date of Patent: August 11, 2020
    Assignee: Intel Corporation
    Inventors: Sriram R. Vangal, Turbo Majumder, Vivek De