Abstract: Various implementations described herein are directed to a device having memory architecture with an array of memory cells arranged in multiple columns with redundancy including first columns of memory cells disposed in a first region along with second columns of memory cells and redundancy columns of memory cells disposed in a second region that is laterally opposite the first region. The device may have column shifting logic that is configured to receive data from the multiple columns, shift the data from the first columns in the first region to a first set of the redundancy columns in the second region, and shift data from the second columns in the second region to a second set of the redundancy columns in the second region.

Abstract: Various implementations described herein are directed to a device having memory architecture with an array of memory cells arranged in multiple columns with redundancy including first columns of memory cells disposed in a first region along with second columns of memory cells and redundancy columns of memory cells disposed in a second region that is laterally opposite the first region. The device may have column shifting logic that is configured to receive data from the multiple columns, shift the data from the first columns in the first region to a first set of the redundancy columns in the second region, and shift data from the second columns in the second region to a second set of the redundancy columns in the second region.

Abstract: A circuit includes a dummy wordline, a dummy bitline, and a dummy cell coupled to the dummy bitline. The dummy cell includes an active pulldown nMOSFET and a pass nMOSFET having a gate connected to the dummy wordline, a first source terminal connected to the drain terminal of the active pulldown nMOSFET, and a drain terminal connected to the dummy bitline. The circuit further includes a substrate-connected dummy bitline coupled to the source terminal of each active pulldown nMOSFET and coupled to a substrate.

Abstract: Various implementations described herein are directed to an integrated circuit having memory circuitry with an array of bitcells. The integrated circuit may include read-write circuitry that is coupled to the memory circuitry to perform read operations and write operations for the array of bitcells. The integrated circuit may include write assist circuitry that is coupled to the memory circuitry and the read-write circuitry. The write assist circuitry may receive a control signal from the read-write circuitry. Further, the write assist circuitry may sense write operations based on the control signal and may drive the write operations for the array of bitcells.

Abstract: Various implementations described herein may refer to an integrated circuit using discharging circuitries for bit lines. In one implementation, an integrated circuit may include a memory array having memory cells, where the memory cells are arranged into columns and configured to be accessed using bit line pairs. The integrated circuit may also include discharging circuitries to selectively discharge the bit line pairs, where a respective discharging circuitry is coupled to a negative supply voltage node of a respective column of memory cells. The respective discharging circuitry may discharge a bit line pair of the respective column to a first voltage when the bit line pair is selected for a memory operation, and may discharge the bit line pair of the respective column to a second voltage when the bit line pair is not selected for a memory operation, where the second voltage is greater than the first voltage.

Abstract: Various implementations described herein are directed to an integrated circuit having multiple banks of memory cells and a local input/output (IO) component for each bank of the multiple banks. The integrated circuit may include multiple signal lines that are coupled to the multiple banks with the local IO components. At least one signal line of the multiple signal lines is wider than one or more of the other signal lines.

Abstract: Various implementations described herein refer to an integrated circuit having a bitcell coupled to a bitline and a column multiplexer device coupled to the bitline between the bitcell and an output of a write driver. The integrated circuit may include a first signal line coupled to a gate of the column multiplexor device that provides a first transition signal. The integrated circuit may include a second signal line coupled to an input of the write driver that provides a second transitioning signal, and the second transition signal transitions substantially similar to the first transitioning signal. The integrated circuit may include a coupling device coupled between the first signal line and the second signal line.

Abstract: Various implementations described herein are directed to an integrated circuit having first dummy bitline circuitry with a first charge storage element and second dummy bitline circuitry coupled to the first dummy bitline circuitry, and the second dummy bitline circuitry has a second charge storage element. The integrate circuit may include decoupling circuitry coupled to the first dummy bitline circuitry and the second dummy bitline circuitry between the first charge storage element and the second charge storage element. The decoupling circuitry may operate to decouple the second charge storage element from the first charge storage element based on an enable signal.

Abstract: Various implementations described herein refer to an integrated circuit having a bitcell coupled to a bitline and a column multiplexer device coupled to the bitline between the bitcell and an output of a write driver. The integrated circuit may include a first signal line coupled to a gate of the column multiplexor device that provides a first transition signal. The integrated circuit may include a second signal line coupled to an input of the write driver that provides a second transitioning signal, and the second transition signal transitions substantially similar to the first transitioning signal. The integrated circuit may include a coupling device coupled between the first signal line and the second signal line.

Abstract: Various implementations described herein refer to an integrated circuit having memory circuitry having multiple banks of bitcell arrays including a first pair of bank arrays and a second pair of bank arrays. The first pair of bank arrays may have a first number of rows, and the second pair of bank arrays have a second number of rows that is different than the first number of rows. The integrated circuit may include bank multiplexer circuitry that is coupled to the first pair of bank arrays via a first channel and the second pair of bank arrays via a second channel that is separate from the first channel. The bank multiplexer circuitry may provide an output data signal from the first pair of bank arrays or the second pair of bank arrays based on a control signal.

Abstract: Various implementations described herein refer to an integrated circuit having a bitcell coupled to a bitline and a column multiplexer device coupled to the bitline between the bitcell and an output of a write driver. The integrated circuit may include a first signal line coupled to a gate of the column multiplexor device that provides a first transition signal. The integrated circuit may include a second signal line coupled to an input of the write driver that provides a second transitioning signal, and the second transition signal transitions substantially similar to the first transitioning signal. The integrated circuit may include a coupling device coupled between the first signal line and the second signal line.

Abstract: Various implementations described herein refer to an integrated circuit having memory circuitry having multiple banks of bitcell arrays including a first pair of bank arrays and a second pair of bank arrays. The first pair of bank arrays may have a first number of rows, and the second pair of bank arrays have a second number of rows that is different than the first number of rows. The integrated circuit may include bank multiplexer circuitry that is coupled to the first pair of bank arrays via a first channel and the second pair of bank arrays via a second channel that is separate from the first channel. The bank multiplexer circuitry may provide an output data signal from the first pair of bank arrays or the second pair of bank arrays based on a control signal.

Abstract: Various implementations described herein may refer to an integrated circuit using discharging circuitries for bit lines. In one implementation, an integrated circuit may include a memory array having memory cells, where the memory cells are arranged into columns and configured to be accessed using bit line pairs. The integrated circuit may also include discharging circuitries to selectively discharge the bit line pairs, where a respective discharging circuitry is coupled to a negative supply voltage node of a respective column of memory cells. The respective discharging circuitry may discharge a bit line pair of the respective column to a first voltage when the bit line pair is selected for a memory operation, and may discharge the bit line pair of the respective column to a second voltage when the bit line pair is not selected for a memory operation, where the second voltage is greater than the first voltage.

Abstract: Various implementations described herein refer to an integrated circuit having a bitcell coupled to a bitline and a column multiplexer device coupled to the bitline between the bitcell and an output of a write driver. The integrated circuit may include a first signal line coupled to a gate of the column multiplexor device that provides a first transition signal. The integrated circuit may include a second signal line coupled to an input of the write driver that provides a second transitioning signal, and the second transition signal transitions substantially similar to the first transitioning signal. The integrated circuit may include a coupling device coupled between the first signal line and the second signal line.

Abstract: Various implementations described herein are directed to a circuit. The circuit may include a memory circuit having a first latch. The circuit may include a power-on-reset circuit having a second latch coupled to the first latch. The second latch may be configured to reset the first latch to a predetermined state at power-up.

Abstract: Various implementations described herein are directed to an integrated circuit having multiple banks of memory cells and a local input/output (IO) component for each bank of the multiple banks. The integrated circuit may include multiple signal lines that are coupled to the multiple banks with the local IO components. At least one signal line of the multiple signal lines is wider than one or more of the other signal lines.

Abstract: Various implementations described herein are directed to an integrated circuit having memory circuitry with an array of bitcells. The integrated circuit may include read-write circuitry that is coupled to the memory circuitry to perform read operations and write operations for the array of bitcells. The integrated circuit may include write assist circuitry that is coupled to the memory circuitry and the read-write circuitry. The write assist circuitry may receive a control signal from the read-write circuitry. Further, the write assist circuitry may sense write operations based on the control signal and may drive the write operations for the array of bitcells.

Abstract: Various implementations described herein are directed to an integrated circuit having first dummy bitline circuitry with a first charge storage element and second dummy bitline circuitry coupled to the first dummy bitline circuitry, and the second dummy bitline circuitry has a second charge storage element. The integrate circuit may include decoupling circuitry coupled to the first dummy bitline circuitry and the second dummy bitline circuitry between the first charge storage element and the second charge storage element. The decoupling circuitry may operate to decouple the second charge storage element from the first charge storage element based on an enable signal.

Abstract: Various implementations described herein are directed to an integrated circuit. The integrated circuit may include dummy wordline circuitry having a dummy wordline driver coupled to multiple dummy wordline loads via a dummy wordline. The integrated circuit may include demultiplexer circuitry coupled to a first path of the dummy wordline between the dummy wordline driver and the multiple dummy wordline loads. The integrated circuit may include multiplexer circuitry coupled to a second path of the dummy wordline between the multiple dummy wordline loads and a dummy bitline load. The demultiplexer circuitry and the multiplexer circuitry may be controlled with one or more selection signals to select at least one of the multiple dummy wordline loads.

Abstract: Various implementations described herein are directed to an integrated circuit. The integrated circuit may include dummy wordline circuitry having a dummy wordline driver coupled to multiple dummy wordline loads via a dummy wordline. The integrated circuit may include demultiplexer circuitry coupled to a first path of the dummy wordline between the dummy wordline driver and the multiple dummy wordline loads. The integrated circuit may include multiplexer circuitry coupled to a second path of the dummy wordline between the multiple dummy wordline loads and a dummy bitline load. The demultiplexer circuitry and the multiplexer circuitry may be controlled with one or more selection signals to select at least one of the multiple dummy wordline loads.