Patents by Inventor Vladimir A. Dmitriev

Vladimir A. Dmitriev has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11661673
    Abstract: Hydride phase vapor epitaxy (HVPE) growth apparatus, methods and materials and structures grown thereby. An HVPE reactor includes generation, accumulation, and growth zones. A source material for growth of indium nitride is generated and collected inside the reactor. A first reactive gas reacts with an indium source inside the generation zone to produce a first gas product having an indium-containing compound. The first gas product is cooled and condenses into a liquid or solid condensate or source material having an indium-containing compound. The source material is collected in the accumulation zone. Vapor or gas resulting from evaporation of the condensate forms a second gas product, which reacts with a second reactive gas in the growth zone for growth of indium nitride.
    Type: Grant
    Filed: May 24, 2021
    Date of Patent: May 30, 2023
    Assignee: Ostendo Technologies, Inc.
    Inventors: Alexander L. Syrkin, Vladimir Ivantsov, Alexander Usikov, Vladimir A. Dmitriev
  • Patent number: 9416464
    Abstract: Apparatus and methods for controlling gas flows in a HVPE reactor. Gas flows may be controlled by a gas focusing element. Gas injection and gas collection tubes are positioned within an outer tube and are separated from each other to define a space there between. A gas, such as HCl gas, flows over the outer surfaces of the injection and collection tubes to contain gases within the space as they flow from the injection tube to the collection tube and over a seed upon which group III nitride materials are grown. Gas flows may also be controlled by a multi-tube structure that separates gases until they reach a grown zone. A multi-tube structure may include four tubes, which separate flows of a halide reactive gas, a reaction product that flows with a carrier gas, and ammonia.
    Type: Grant
    Filed: October 11, 2007
    Date of Patent: August 16, 2016
    Assignee: Ostendo Technologies, Inc.
    Inventors: Vladimir A. Dmitriev, Oleg V. Kovalenkov, Vladimir Ivantsov, Lisa Shapovalov, Alexander L. Syrkin, Anna Volkova, Vladimir Sizov, Alexander Usikov, Vitali A. Soukhoveev
  • Patent number: 8647435
    Abstract: HVPE reactors and methods for growth of p-type group III nitride materials including p-GaN. A reaction product such as gallium chloride is delivered to a growth zone inside of a HVPE reactor by a carrier gas such as Argon. The gallium chloride reacts with a reactive gas such as ammonia in the growth zone in the presence of a magnesium-containing gas to grow p-type group III nitride materials. The source of magnesium is an external, non-metallic compound source such as Cp2Mg.
    Type: Grant
    Filed: October 11, 2007
    Date of Patent: February 11, 2014
    Assignee: Ostendo Technologies, Inc.
    Inventors: Vladimir A. Dmitriev, Oleg V. Kovalenkov, Vladimir Ivantsov, Lisa Shapovalov, Alexander L. Syrkin, Anna Volkova, Vladimir Sizov, Alexander Usikov, Vitali A. Soukhoveev
  • Patent number: 8372199
    Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
    Type: Grant
    Filed: June 19, 2008
    Date of Patent: February 12, 2013
    Assignee: Freiberger Compound Materials GmbH
    Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
  • Publication number: 20120076968
    Abstract: Method for producing a III-N (AlN, GaN, AlxGa(1-x)N) crystal by Vapor Phase Epitaxy (VPE), the method comprising: providing a reactor having: a growth zone for growing a III-N crystal; a substrate holder located in the growth zone that supports at least one substrate on which to grow the III-N crystal; a gas supply system that delivers growth material for growing the III-N crystal to the growth zone from an outlet of the gas supply system; and a heating element that controls temperature in the reactor; determining three growth sub-zones in the growth zone for which a crystal grown in the growth sub-zones has respectively a concave, flat or convex curvature; growing the III-N crystal on a substrate in a growth region for which the crystal has a by desired curvature.
    Type: Application
    Filed: December 1, 2011
    Publication date: March 29, 2012
    Applicant: FREIBERGER COMPOUND MATERIALS GMBH
    Inventors: Vladimir A. Dmitriev, Yuri V. Melnik
  • Patent number: 8092597
    Abstract: Method for producing a III-N (AlN, GaN, AlxGa(1-x)N) crystal by Vapor Phase Epitaxy (VPE), the method comprising: providing a reactor having: a growth zone for growing a III-N crystal; a substrate holder located in the growth zone that supports at least one substrate on which to grow the III-N crystal; a gas supply system that delivers growth material for growing the III-N crystal to the growth zone from an outlet of the gas supply system; and a heating element that controls temperature in the reactor; determining three growth sub-zones in the growth zone for which a crystal grown in the growth sub-zones has respectively a concave, flat or convex curvature; growing the III-N crystal on a substrate in a growth region for which the crystal has a by desired curvature.
    Type: Grant
    Filed: January 22, 2011
    Date of Patent: January 10, 2012
    Assignee: Freiberger Compound Materials GmbH
    Inventors: Vladimir A. Dmitriev, Yuri V. Melnik
  • Patent number: 8092596
    Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
    Type: Grant
    Filed: June 13, 2008
    Date of Patent: January 10, 2012
    Assignee: Freiberger Compound Materials GmbH
    Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A Dmitriev
  • Publication number: 20110114015
    Abstract: Method for producing a III-N (AlN, GaN, AlxGa(1-x)N) crystal by Vapor Phase Epitaxy (VPE), the method comprising: providing a reactor having: a growth zone for growing a III-N crystal; a substrate holder located in the growth zone that supports at least one substrate on which to grow the III-N crystal; a gas supply system that delivers growth material for growing the III-N crystal to the growth zone from an outlet of the gas supply system; and a heating element that controls temperature in the reactor; determining three growth sub-zones in the growth zone for which a crystal grown in the growth sub-zones has respectively a concave, flat or convex curvature; growing the III-N crystal on a substrate in a growth region for which the crystal has a by desired curvature.
    Type: Application
    Filed: January 22, 2011
    Publication date: May 19, 2011
    Applicant: FREIBERGER COMPOUND MATERIALS GMBH
    Inventors: Vladimir A. Dmitriev, Yuri V. Melnik
  • Patent number: 7727333
    Abstract: Hydride phase vapor epitaxy (HVPE) growth apparatus, methods and materials and structures grown thereby. A HVPE growth apparatus includes generation, accumulation and growth zones. A first reactive gas reacts with an indium source inside the generation zone to produce a first gas product having an indium-containing compound. The first gas product is transported to the accumulation zone where it cools and condenses into a source material having an indium-containing compound. The source material is collected in the accumulation zone and evaporated. Vapor or gas resulting from evaporation of the source material forms reacts with a second reactive gas in the growth zone for growth of ternary and quaternary materials including indium gallium nitride, indium aluminum nitride, and indium gallium aluminum nitride.
    Type: Grant
    Filed: March 27, 2007
    Date of Patent: June 1, 2010
    Assignee: Technologies and Devices International, Inc.
    Inventors: Alexander L. Syrkin, Vladimir Ivantsov, Alexander Usikov, Oleg Kovalenkov, Vladimir A. Dmitriev
  • Patent number: 7670435
    Abstract: A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor includes both a growth zone and a growth interruption zone. According to another aspect, an HVPE reactor includes a slow growth rate gallium source, thus allowing thin layers to be grown. Using the slow growth rate gallium source in conjunction with a conventional gallium source allows a device structure to be fabricated during a single furnace run that includes both thick layers (i.e., utilizing the conventional gallium source) and thin layers (i.e., utilizing the slow growth rate gallium source).
    Type: Grant
    Filed: March 28, 2002
    Date of Patent: March 2, 2010
    Assignee: Technologies and Devices International, Inc.
    Inventors: Denis V. Tsvetkov, Andrey E. Nikolaev, Vladimir A. Dmitriev
  • Patent number: 7611586
    Abstract: An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.
    Type: Grant
    Filed: October 8, 2007
    Date of Patent: November 3, 2009
    Assignee: Technologies and Devices International, Inc.
    Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Kaite Tsvetkov, Vladimir A. Dmitriev
  • Patent number: 7556688
    Abstract: A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.
    Type: Grant
    Filed: May 20, 2005
    Date of Patent: July 7, 2009
    Assignee: Freiberger Compound Materials GmbH
    Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
  • Publication number: 20090148984
    Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
    Type: Application
    Filed: June 13, 2008
    Publication date: June 11, 2009
    Inventors: Yuri V. MELNIK, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
  • Publication number: 20090130781
    Abstract: HVPE method for simultaneously fabricating multiple Group III nitride semiconductor structures during a single reactor run. A HVPE reactor includes a reactor tube, a growth zone, a heating element and a plurality of gas blocks. A substrate holder is capable of holding multiple substrates and can be a single or multi-level substrate holder. The gas delivery blocks are independently controllable. Gas flows from the delivery blocks are mixed to provide a substantially uniform gas environment within the growth zone. The substrate holder can be controlled, e.g., rotated and/or tilted, for uniform material growth. Multiple Group III nitride semiconductor structures can be grown on each substrate during a single fabrication run of the HVPE reactor. Growth on different substrates is substantially uniform and can be performed on larger area substrates, such as 3-12? substrates.
    Type: Application
    Filed: November 10, 2008
    Publication date: May 21, 2009
    Applicant: TECHNOLOGIES AND DEVICES INTERNATIONAL, INC.
    Inventors: Vladimir A. Dmitriev, Viacheslav A. Maslennikov, Vitali Soukhoveev, Oleg V. Kovalenkov
  • Publication number: 20090092815
    Abstract: A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.).
    Type: Application
    Filed: September 22, 2008
    Publication date: April 9, 2009
    Applicant: TECHNOLOGIES AND DEVICES INTERNATIONAL, INC.
    Inventors: Vladimir A. Dmitriev, Yuri V. Melnik
  • Patent number: 7501023
    Abstract: A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.).
    Type: Grant
    Filed: February 13, 2004
    Date of Patent: March 10, 2009
    Assignee: Technologies and Devices, International, Inc.
    Inventors: Vladimir A. Dmitriev, Yuri V. Melnik
  • Publication number: 20080257256
    Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
    Type: Application
    Filed: June 19, 2008
    Publication date: October 23, 2008
    Inventors: Yuri V. MELNIK, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
  • Patent number: 7279047
    Abstract: An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.
    Type: Grant
    Filed: August 1, 2003
    Date of Patent: October 9, 2007
    Assignee: Technologies and Devices, International, Inc.
    Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
  • Publication number: 20060011135
    Abstract: HVPE reactor for simultaneously fabricating multiple Group III nitride semiconductor structures during a single reactor run. The HVPE reactor includes a reactor chamber, a growth zone, a heating element and a gas supply system that can include a plurality of gas blocks. A substrate holder holds multiple substrates and can be a single or multi-level substrate holder. Gas flows from gas delivery blocks are independently controllable and are mixed to provide a substantially uniform gas environment within the growth zone. The substrate holder can be controlled, e.g., rotated and/or tilted, for uniform material growth. Multiple Group III nitride semiconductor structures can be grown on each substrate during a single fabrication run of the HVPE reactor. Growth on different substrates is substantially uniform and can be performed simultaneously on multiple larger area substrates, such as 3-12? substrates.
    Type: Application
    Filed: July 1, 2005
    Publication date: January 19, 2006
    Inventors: Vladimir A. Dmitriev, Viacheslav Maslennikov, Vitali Soukhoveev, Oleg Kovalenkov
  • Patent number: 6955719
    Abstract: A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. According to one aspect, an HVPE reactor is provided that includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor is provided that includes at least one growth zone as well as a growth interruption zone. According to another aspect, an HVPE reactor is provided that includes extended growth sources such as slow growth rate gallium source with a reduced gallium surface area. According to another aspect, an HVPE reactor is provided that includes multiple sources of the same material, for example Mg, which can be used sequentially to prolong a growth cycle.
    Type: Grant
    Filed: July 18, 2003
    Date of Patent: October 18, 2005
    Assignee: Technologies and Devices, Inc.
    Inventors: Vladimir A. Dmitriev, Denis V. Tsvetkov, Aleksei Pechnikov, Yuri V. Melnik, Aleksandr Usikov, Oleg Kovalenkov