Abstract: The present invention refers to a method for determining an effect of one or more of pixels to be introduced into a substrate of a photolithographic mask, the photolithographic mask having one or more pattern elements, wherein the one or more pixels serve to at least partly correct one or more errors of the photolithographic mask, the method comprising: determining the effect of the one or more introduced pixels by determining a change in birefringence of the substrate of the photolithographic mask having the one or more pattern elements.

Abstract: This invention refers to a method for optimizing a defect correction of an optical element used in a lithographic process which comprises the steps: (a) determining whether the optical element has at least one defect; (b) determining whether the optical element has at least one surface contour deformation; and (c) determining at least one pixel arrangement for writing into the optical element based on whether at least one defect has been determined and on whether at least one surface contour deformation has been determined, the at least one pixel arrangement correcting the at least one defect, the at least one surface contour deformation or both.

Abstract: Hydride phase vapor epitaxy (HVPE) growth apparatus, methods and materials and structures grown thereby. An HVPE reactor includes generation, accumulation, and growth zones. A source material for growth of indium nitride is generated and collected inside the reactor. A first reactive gas reacts with an indium source inside the generation zone to produce a first gas product having an indium-containing compound. The first gas product is cooled and condenses into a liquid or solid condensate or source material having an indium-containing compound. The source material is collected in the accumulation zone. Vapor or gas resulting from evaporation of the condensate forms a second gas product, which reacts with a second reactive gas in the growth zone for growth of indium nitride.

Abstract: The present invention refers to a method for performing an aerial image simulation of a photolithographic mask which comprises the following steps: (a) modifying an optical radiation distribution at a patterned surface of the photolithographic mask, depending on at least one first arrangement of pixels to be generated in the photolithographic mask; and (b) performing the aerial image simulation of the photolithographic mask by using the generated modified optical radiation distribution.

Abstract: The present invention refers to a method and an apparatus for determining positions of a plurality of pixels to be introduced into a substrate of a photolithographic mask by use of a laser system, wherein the pixels serve to at least partly correct one or more errors of the photolithographic mask. The method comprises the steps: (a) obtaining error data associated with the one or more errors; (b) obtaining first parameters of an illumination system, the first parameters determining an illumination of the photolithographic mask of the illumination system when processing a wafer by illuminating with the illumination system using the photolithographic mask; and (c) determining the positions of the plurality of pixels based on the error data and the first parameters.

Abstract: An optical system includes a scanning unit, a first lens-element group including at least a first lens element, and a focusing unit which is designed to focus beams onto a focus, wherein the focusing unit includes a second lens-element group including at least a second lens element and an imaging lens. The imaging lens further includes a pupil plane and a wavefront manipulator. The wavefront manipulator is arranged in the pupil plane of the imaging lens or in a plane that is conjugate to the pupil plane, or the scanning unit of the optical system is arranged in a plane that is conjugate to the pupil plane and the wavefront manipulator is arranged upstream of the scanning unit in the light direction. The focus of the second lens-element group lies in the pupil plane of the imaging lens in all focal positions of the focusing unit.

Abstract: An example method may include receiving, from a wireless sniffer, sniffer data for a window of time, where the sniffer data may include wireless signal data. The method may also include obtaining corresponding access point data from an access point in a wireless network for at least part of the window of time for which the sniffer data is received. The method may additionally include analyzing the sniffer data and the corresponding access point data to assess performance of the wireless network.

Abstract: The present invention refers to a method for performing an aerial image simulation of a photolithographic mask which comprises the following steps: (a) modifying an optical radiation distribution at a patterned surface of the photolithographic mask, depending on at least one first arrangement of pixels to be generated in the photolithographic mask; and (b) performing the aerial image simulation of the photolithographic mask by using the generated modified optical radiation distribution.

Abstract: The present invention refers to a method for determining an effect of one or more of pixels to be introduced into a substrate of a photolithographic mask, the photolithographic mask having one or more pattern elements, wherein the one or more pixels serve to at least partly correct one or more errors of the photolithographic mask, the method comprising: determining the effect of the one or more introduced pixels by determining a change in birefringence of the substrate of the photolithographic mask having the one or more pattern elements.

Abstract: An example method may include receiving, from a wireless sniffer, sniffer data for a window of time, where the sniffer data may include wireless signal data. The method may also include obtaining corresponding access point data from an access point in a wireless network for at least part of the window of time for which the sniffer data is received. The method may additionally include analyzing the sniffer data and the corresponding access point data to assess performance of the wireless network.

Abstract: The present invention refers to a method and an apparatus for determining positions of a plurality of pixels to be introduced into a substrate of a photolithographic mask by use of a laser system, wherein the pixels serve to at least partly correct one or more errors of the photolithographic mask. The method comprises the steps: (a) obtaining error data associated with the one or more errors; (b) obtaining first parameters of an illumination system, the first parameters determining an illumination of the photolithographic mask of the illumination system when processing a wafer by illuminating with the illumination system using the photolithographic mask; and (c) to determining the positions of the plurality of pixels based on the error data and the first parameters.

Abstract: The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps: determining a transfer coefficient as a calibration parameter, correcting the photomask by writing pixel fields, verifying the photomask corrected thus, wherein a transfer coefficient is used for verifying the corrected photomask, said transfer coefficient being obtained from a measured scattering function of pixel fields.

Abstract: A method for generating a predetermined three-dimensional contour of a component and/or a wafer comprises: (a) determining a deviation of an existing three-dimensional contour of the component and/or the wafer from the predetermined three-dimensional contour; (b) calculating at least one three-dimensional arrangement of laser pulses having one or more parameter sets defining the laser pulses for correcting the determined existing deviation of the three-dimensional contour from the predetermined three-dimensional contour; and (c) applying the calculated at least one three-dimensional arrangement of laser pulses on the component and/or the wafer for generating the predetermined three-dimensional contour.

Abstract: The inventions concerns an optical system comprising a scanning unit, a first lens-element group comprising at least a first lens element, a focusing unit which is designed to focus beams onto a focus, wherein the focusing unit comprises a second lens-element group comprising at least a second lens element and an imaging lens. The imaging lens further comprises a pupil plane and a wavefront manipulator. The wavefront manipulator of the optical system is arranged in the pupil plane of the imaging lens or in a plane that is conjugate to the pupil plane of the imaging lens, or the scanning unit of the optical system is arranged in a plane that is conjugate to the pupil plane of the imaging lens and the wavefront manipulator is arranged upstream of the scanning unit in the light direction. The focus of the second lens-element group lies in the pupil plane of the imaging lens in all focal positions of the focusing unit.

Abstract: The invention relates to a method for correcting the critical dimension uniformity of a photomask for semiconductor lithography, comprising the following steps: determining a transfer coefficient as a calibration parameter, correcting the photomask by writing pixel fields, verifying the photomask corrected thus, wherein a transfer coefficient is used for verifying the corrected photomask, said transfer coefficient being obtained from a measured scattering function of pixel fields.

Abstract: Method, apparatus for imparting direction-selective light attenuation. A method for imparting direction-selective light attenuation to a photomask may include assigning different attenuation levels to light rays of different directions of incidence. The method may also include computing an array of shading elements to attenuate the light rays with the assigned different attenuation levels, depending on the direction of incidence of the light rays. The method may further include inscribing the array of shading elements within a substrate of the photomask.

Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract: The invention relates to a method for compensating at least one defect of an optical system which includes introducing an arrangement of local persistent modifications in at least one optical element of the optical system, which does not have pattern elements on one of its optical surfaces, so that the at least one defect is at least partially compensated.

Abstract: The invention relates to a method for determining at least one unknown laser beam parameter of a laser beam used for correcting errors of a transparent material including inducing a first persistent modification in the material by an interaction with the laser beam having a first set of laser beam parameters, measuring the induced first persistent modification of the material, calculating a second persistent modification in the material using a model describing persistent modifications in the material with a second set of laser beam parameters, wherein the first set of laser beam parameters comprises the second set of laser beam parameters and the at least one unknown laser beam parameter, setting up a target functional including the first persistent modification and the second persistent modification, and determining the at least one unknown laser beam parameter by minimizing the target functional.

Abstract: Method, apparatus for imparting direction-selective light attenuation. A method for imparting direction-selective light attenuation to a photomask may include assigning different attenuation levels to light rays of different directions of incidence. The method may also include computing an array of shading elements to attenuate the light rays with the assigned different attenuation levels, depending on the direction of incidence of the light rays. The method may further include inscribing the array of shading elements within a substrate of the photomask.