Abstract: A method for correcting a plurality of errors of a photolithographic mask is provided. First parameters of a imaging transformation of the photolithographic mask and second parameters of a laser beam locally directed onto the photolithographic mask are optimized, and the plurality of errors are corrected by applying an imaging transformation using optimized first parameters and locally directing the laser beam onto the photolithographic mask using optimized second parameters. The first and the second parameters are simultaneously optimized in a joint optimization process.

Abstract: The invention relates to a method for locally deforming an optical element for photolithography in accordance with a predefined deformation form comprising: (a) generating at least one laser pulse having at least one laser beam parameter; and (b) directing the at least one laser pulse onto the optical element, wherein the at least one laser beam parameter of the laser pulse is selected to yield the predefined deformation form.

Abstract: A method for generating a predetermined three-dimensional contour of a component and/or a wafer comprises: (a) determining a deviation of an existing three-dimensional contour of the component and/or the wafer from the predetermined three-dimensional contour; (b) calculating at least one three-dimensional arrangement of laser pulses having one or more parameter sets defining the laser pulses for correcting the determined existing deviation of the three-dimensional contour from the predetermined three-dimensional contour; and (c) applying the calculated at least one three-dimensional arrangement of laser pulses on the component and/or the wafer for generating the predetermined three-dimensional contour.

Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract: The patent application discloses mechanisms that, for a given channel step or edge response, bit interval, and data dependent jitter table can directly determine the minimal eye or bit error rate opening by building a worst case pattern considering the effect of data dependent jitter. These mechanisms can be based on building an indexed table of jitter samples, preparing a structure in the form of connected elements corresponding to the jitter samples, and then applying dynamic programming to determine paths through the connected elements.

Abstract: Apparatus and methods for controlling gas flows in a HVPE reactor. Gas flows may be controlled by a gas focusing element. Gas injection and gas collection tubes are positioned within an outer tube and are separated from each other to define a space there between. A gas, such as HCl gas, flows over the outer surfaces of the injection and collection tubes to contain gases within the space as they flow from the injection tube to the collection tube and over a seed upon which group III nitride materials are grown. Gas flows may also be controlled by a multi-tube structure that separates gases until they reach a grown zone. A multi-tube structure may include four tubes, which separate flows of a halide reactive gas, a reaction product that flows with a carrier gas, and ammonia.

Abstract: A method includes generating, using a data processor, information showing variations of a parameter across a photo mask relative to an average value of the parameter measured at various locations on the photo mask. For example, the information can include data points, and each data point can be determined based on a ratio between a measurement value and an average of a plurality of measurement values.

Abstract: A contribution to a wafer level critical dimension distribution from a scanner of a lithography system can be determined based on measured wafer level critical dimension uniformity distribution and a contribution to the wafer level critical dimension distribution from a photo mask. Light transmission (104) across the photo mask (162) can be measured, a transmittance variation distribution of the photo mask can be determined, and the contribution to the wafer level critical dimension distribution from the photo mask (162) can be determined (132) based on the transmittance variation distribution of the photo mask.

Abstract: A system for processing a substrate includes a light source to provide light pulses, a stage to support a substrate, optics to focus the light pulses onto the substrate, a scanner to scan the light pulses across the substrate, a computer to control properties of the light pulses and the scanning of the light pulses such that color centers are generated in various regions of the substrate, and at least one of (i) an ultraviolet light source to irradiate the substrate with ultraviolet light or (ii) a heater to heat the substrate after formation of the color centers to stabilize a transmittance spectrum of the substrate.

Abstract: The invention relates to a method for locally deforming an optical element for photolithography in accordance with a predefined deformation form comprising: (a) generating at least one laser pulse having at least one laser beam parameter; and (b) directing the at least one laser pulse onto the optical element, wherein the at least one laser beam parameter of the laser pulse is selected to yield the predefined deformation form.

Abstract: The invention relates to a method for compensating at least one defect of an optical system which comprises introducing an arrangement of local persistent modifications in at least one optical element of the optical system, which does not have pattern elements on one of its optical surfaces, so that the at least one defect is at least partially compensated.

Abstract: A photo mask having a first set of patterns and a second set of patterns is provided in which the first set of patterns correspond to a circuit pattern to be fabricated on a wafer, and the second set of patterns have dimensions such that the second set of patterns do not contribute to the circuit pattern that is produced using a lithography process based on the first set of patterns under a first exposure condition. The critical dimension distribution of the photo mask is determined based on the second set of patterns that do not contribute to the circuit pattern produced using the lithography process based on the first set of patterns under the first exposure condition.

Abstract: Data associated with a substrate can be processed by measuring a property of at least a first type of specific features and a second type of specific features on a substrate. The first type of specific features is measured at a first plurality of locations on the substrate to generate a first group of measured values, and the second type of specific features is measured at a second plurality of locations on the substrate to generate a second group of measured values, in which the first and second groups of measured values are influenced by critical dimension variations of the substrate. A combined measurement function is defined based on combining the at least first and second groups of measured values. At least one group of measured values is transformed prior to combining with another group or other groups of measured values, in which the transformation is defined by a group of coefficients.

Abstract: The patent application discloses mechanisms that, for a given channel step or edge response, bit interval, and data dependent jitter table can directly determine the minimal eye or bit error rate opening by building a worst case pattern considering the effect of data dependent jitter. These mechanisms can be based on building an indexed table of jitter samples, preparing a structure in the form of connected elements corresponding to the jitter samples, and then applying dynamic programming to determine paths through the connected elements.

Abstract: HVPE reactors and methods for growth of p-type group III nitride materials including p-GaN. A reaction product such as gallium chloride is delivered to a growth zone inside of a HVPE reactor by a carrier gas such as Argon. The gallium chloride reacts with a reactive gas such as ammonia in the growth zone in the presence of a magnesium-containing gas to grow p-type group III nitride materials. The source of magnesium is an external, non-metallic compound source such as Cp2Mg.

Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract: A photo mask having a first set of patterns and a second set of patterns is provided in which the first set of patterns correspond to a circuit pattern to be fabricated on a wafer, and the second set of patterns have dimensions such that the second set of patterns do not contribute to the circuit pattern that is produced using a lithography process based on the first set of patterns under a first exposure condition. The critical dimension distribution of the photo mask is determined based on the second set of patterns that do not contribute to the circuit pattern produced using the lithography process based on the first set of patterns under the first exposure condition.

Abstract: Data associated with a substrate can be processed by measuring a property of at least a first type of specific features and a second type of specific features on a substrate. The first type of specific features is measured at a first plurality of locations on the substrate to generate a first group of measured values, and the second type of specific features is measured at a second plurality of locations on the substrate to generate a second group of measured values, in which the first and second groups of measured values are influenced by critical dimension variations of the substrate. A combined measurement function is defined based on combining the at least first and second groups of measured values. At least one group of measured values is transformed prior to combining with another group or other groups of measured values, in which the transformation is defined by a group of coefficients.

Abstract: A system for processing a substrate includes a light source to provide light pulses, a stage to support a substrate, optics to focus the light pulses onto the substrate, a scanner to scan the light pulses across the substrate, a computer to control properties of the light pulses and the scanning of the light pulses such that color centers are generated in various regions of the substrate, and at least one of (i) an ultraviolet light source to irradiate the substrate with ultraviolet light or (ii) a heater to heat the substrate after formation of the color centers to stabilize a transmittance spectrum of the substrate.