Abstract: Dimensions of structures in integrated circuits are shrinking with each new fabrication technology generation. Maintaining control of profiles of structures in transistors and interconnects is becoming more important to sustaining profitable integrated circuit production facilities. Measuring profiles of structures with many elements in integrated circuits, such as MOS transistor gates with recessed regions for Si—Ge epitaxial layers, is not cost effective for the commonly used metrology techniques: SEM, TEM and AFM. Scatterometry is technically unfeasible due to the number of elements and optical constants. The instant invention is a simplified scatterometry structure which reproduces the profiles of a structure to be profiled in a simpler structure that is compatible with conventional scatterometric techniques. A method of fabricating a transistor and an integrated circuit using the inventive simplified scatterometry structure are also disclosed.

Abstract: Measuring surface profiles of structures on integrated circuits is difficult when feature sizes are less than 100 nanometers. Atomic force microscopy provides surface profile measurement capability on flat horizontal surfaces, but has difficulty with three-dimensional structures such as MOS transistor gates, contact and via holes, interconnect trenches and photoresist patterns. An atomic force microscopy probe with two atomically sharp tips configured to facilitate measurements of three-dimensional structures is disclosed. A method of making such measurements using the disclosed probe and a method of fabricating an IC encompassing the method are also claimed.

Abstract: Exemplary embodiments provide a system and method for holographic scatterometry by using holography in a scatterometry system to record amplitude and phase of scattered light from a featured object in order to measure geometries and/or feature dimensions of the object. The amplitude and phase information can be obtained simultaneously and instantaneously in a single tool with incident and azymuthal angular resolution. Specifically, the holographic scatterometry can include a splitter for producing two coherent beams including a test beam and a reference beam. The test beam can be focused on and scattered, diffracted and/or reflected from the featured object and interfered with the reference beam on an image sensor (e.g., a charge-coupled device (CCD) camera). The resulting holographic information on the camera plane can include all angular amplitude and phase information of the scattered light from the measured object.

Abstract: Dimensions of structures in integrated circuits are shrinking with each new fabrication technology generation. Maintaining control of profiles of structures in transistors and interconnects is becoming more important to sustaining profitable integrated circuit production facilities. Measuring profiles of structures with many elements in integrated circuits, such as MOS transistor gates with recessed regions for Si—Ge epitaxial layers, is not cost effective for the commonly used metrology techniques: SEM, TEM and AFM. Scatterometry is technically unfeasible due to the number of elements and optical constants. The instant invention is a simplified scatterometry structure which reproduces the profiles of a structure to be profiled in a simpler structure that is compatible with conventional scatterometric techniques. A method of fabricating a transistor and an integrated circuit using the inventive simplified scatterometry structure are also disclosed.

Abstract: Measuring surface profiles of structures on integrated circuits is difficult when feature sizes are less than 100 nanometers. Atomic force microscopy provides surface profile measurement capability on flat horizontal surfaces, but has difficulty with three-dimensional structures such as MOS transistor gates, contact and via holes, interconnect trenches and photoresist patterns. An atomic force microscopy probe with two atomically sharp tips configured to facilitate measurements of three-dimensional structures is disclosed. A method of making such measurements using the disclosed probe and a method of fabricating an IC encompassing the method are also claimed.

Abstract: One embodiment of the present invention relates to a method of forming an integrated circuit, comprising forming an STI structure in a semiconductor body, the STI structure having a divot characteristic, performing scatterometry on the STI structure and obtaining signature spectra associated therewith, and continuing fabrication of the integrated circuit when the obtained signature spectra satisfies a predetermined performance specification.