Patents by Inventor Vladimir Ivanovich Kuznetsov
Vladimir Ivanovich Kuznetsov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9478449Abstract: Disclosed is a process tunnel (102) through which substrates (140) may be transported in a floating condition between two gas bearings (124, 134). To monitor the transport of the substrates through the process tunnel, the upper and lower walls (120, 130) of the tunnel are fitted with at least one substrate detection sensor (S1, . . . , S6) at a respective substrate detection sensor location, said substrate detection sensor being configured to generate a reference signal reflecting a presence of a substrate between said first and second walls near and/or at said substrate detection sensor location. Also provided is a monitoring and control unit (160) that is operably connected to the at least one substrate detection sensor (S1, . . . , S6), and that is configured to record said reference signal as a function of time and to process said reference signal.Type: GrantFiled: July 13, 2012Date of Patent: October 25, 2016Assignee: ASM INTERNATIONAL N.V.Inventors: Pascal Gustaaf Vermont, Wilhelmus Gerardus Van Velzen, Vladimir Ivanovich Kuznetsov, Ernst Hendrik August Granneman, Gonzalo Felipe Ramirez Troxler
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Publication number: 20150300125Abstract: Insulated string segment contains an inner pipe with reinforcements on its ends, centrators located on it, insulation and gas absorbers, outer pipe with external thread on its ends and connecting coupling. Outer pipe is produced with pressure isolated valve providing creation of 10?4-10?3 mm of Mercury vacuum in the interpipe space. Steel insertions made in a form of spools and welded to inner and outer pipes with vacuum-tight seams are located in the interpipe space so as to provide groove produced on the insertion and an outer pipe create hollow. Centrators are made in a form of clamps with two parts closely tightened to each other with inner surface made with friction properties. The string is useful in oil and gas extraction for forcing the heat-transfer agent into a layer. Reduction of heat loss during passage through the string and improvement of service ability of the string are provided.Type: ApplicationFiled: December 18, 2012Publication date: October 22, 2015Applicant: TMK-PREMIUM SERVICES LLCInventors: Sergey Alexandrovich REKIN, Nikolai Vladimirovich TRUTNEV, Alexander Igorevich GREHOV, Nadezhda Tahirovna TIHONTSEVA, Mihail Naumovich LEFLER, Igor Urievich PYSHMINTSEV, Vladimir Ivanovich KUZNETSOV, Petr Leonidovich KOPYLOV, Andrey Alexandrovich KRIVOSHEEV, Vsevolod Vladimirovich CHEREPANOV, Nail Anatolievich GAFAROV, Vladimir Ivanovich NUKHIN, Sergey Nikolaevich MENSHIKOV, Igor Sergeevich MOROZOV, Roman Urievich DASHKOV, Sergey Gennadievich VERIKOV, Boris Urievich SHCHERBAKOV, Arkadii Petrovich BYKOV, Yuri Fedorovich EMELIANOV, Ilya Viktorovich CHERNYH, Andrey Gennadievich FILIPPOV
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Publication number: 20140199788Abstract: Disclosed is a process tunnel (102) through which substrates (140) may be transported in a floating condition between two gas bearings (124, 134). To monitor the transport of the substrates through the process tunnel, the upper and lower walls (120, 130) of the tunnel are fitted with at least one substrate detection sensor (S1, . . . , S6) at a respective substrate detection sensor location, said substrate detection sensor being configured to generate a reference signal reflecting a presence of a substrate between said first and second walls near and/or at said substrate detection sensor location. Also provided is a monitoring and control unit (160) that is operably connected to the at least one substrate detection sensor (S1, . . . , S6), and that is configured to record said reference signal as a function of time and to process said reference signal.Type: ApplicationFiled: July 13, 2012Publication date: July 17, 2014Applicant: Levitech B.V.Inventors: Pascal Gustaaf Vermont, Wilhelmus Gerardus Van Velzen, Vladimir Ivanovich Kuznetsov, Ernst Hendrik August Granneman, Gonzalo Felipe Ramirez Troxler
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Patent number: 7351293Abstract: Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as uniformly as possible. For this purpose, it is proposed to rotate the wafer by allowing the gas flow to emerge perpendicular to the surface of the wafer and then to impart to this gas a component which is tangential with respect to the wafer, thus generating rotation. This tangential component may be generated by the provision of grooves, which may be of spiral or circular design.Type: GrantFiled: October 19, 2004Date of Patent: April 1, 2008Assignees: ASM International N.V., Koninklijke Philips Electronics N.V.Inventors: Vladimir Ivanovich Kuznetsov, Sijbrand Radelaar, Jacobus Cornells Gerardus Van Der Sanden, Theo Anjes Maria Ruijl
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Patent number: 7048488Abstract: For wafer processing, wafers are transferred between a thermal treatment chamber and a thermal treatment installation. The treatment chamber has a top section and a bottom section between which the wafer is accommodated during treatment. The thermal treatment installation has a loading chamber having loading means and transport means. The wafer is place on a wafer support while in the loading chamber, wherein the wafer support is configured as a ring having support elements to support the wafer. The wafer support loaded with the wafer is inserted into the thermal treatment chamber so that the wafer and the wafer support are positioned between the top section and the bottom section. The wafer is individually processed in the thermal treatment chamber. After processing the wafer, the wafer support is removed from the thermal treatment chamber.Type: GrantFiled: May 8, 2000Date of Patent: May 23, 2006Assignee: ASM International N.V.Inventors: Vladimir Ivanovich Kuznetsov, Theodorus Gerardus Maria Oosterlaken, Christianus Gerardus Maria Ridder, Ernst Hendrik August Granneman
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Patent number: 6964751Abstract: Method and device for the heat treatment of substrates, wherein the substrates are positioned in the vicinity of a heated, essentially flat furnace body extending over the surface of the substrate. In order to provide a reproducible treatment when treating a number of substrates successively, the temperature of the furnace body is measured so close to the surface adjacent to the substrate that the withdrawal of heat from the furnace body by the substrate can be detected. The introduction of each substrate takes place at a point in time when the temperature measured in this way is, within certain limits, equal to a desired initial treatment temperature Ttrig.Type: GrantFiled: April 13, 2004Date of Patent: November 15, 2005Assignee: ASM International N.V.Inventors: Arjen Storm, Ronald Bast, Vladimir Ivanovich Kuznetsov, Jan Zinger
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Patent number: 6877250Abstract: In an apparatus for a treatment of a wafer at elevated temperatures, the wafer is taken out of the reactor after heat treatment with the help of a mechanical transport apparatus which preferably grips the wafer around the circumference and on the under side. The transport apparatus includes a wafer surrounding ring. The wafer is placed in a floating wafer reactor where it is cooled in a controlled manner. Transport for further action or treatment then takes place.Type: GrantFiled: December 10, 2002Date of Patent: April 12, 2005Assignee: ASM International N.V.Inventors: Ernst Hendrik August Granneman, Vladimir Ivanovich Kuznetsov, Gert Jan Snijders
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Patent number: 6824619Abstract: Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as uniformly as possible. For this purpose, it is proposed to rotate the wafer by allowing the gas flow to emerge perpendicular to the surface of the wafer and then to impart to this gas a component which is tangential with respect to the wafer, thus generating rotation. This tangential component may be generated by the provision of grooves, which may be of spiral or circular design.Type: GrantFiled: January 11, 2002Date of Patent: November 30, 2004Assignees: ASM International N.V., Koninklijke Philips Electronics N.V.Inventors: Vladimir Ivanovich Kuznetsov, Sijbrand Radelaar, Jacobus Cornells Gerardus Van Der Sanden, Theo Anjes Maria Ruijl
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Publication number: 20040195737Abstract: Method and device for the heat treatment of substrates, wherein the substrates are positioned in the vicinity of a heated, essentially flat furnace body extending over the surface of the substrate. In order to provide a reproducible treatment when treating a number of substrates successively, the temperature of the furnace body is measured so close to the surface adjacent to the substrate that the withdrawal of heat from the furnace body by the substrate can be detected. The introduction of each substrate takes place at a point in time when the temperature measured in this way is, within certain limits, equal to a desired initial treatment temperature Ttrig.Type: ApplicationFiled: April 13, 2004Publication date: October 7, 2004Inventors: Arjen Storm, Ronald Bast, Vladimir Ivanovich Kuznetsov, Jan Zinger
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Patent number: 6770851Abstract: In a method and apparatus for the thermal treatment of semiconductor substrates, such as a wafer, a wafer is brought into a heat treatment apparatus wherein the heat treatment apparatus comprises two substantially flat parts parallel to the introduction position of the wafer, between which the wafer is taken in. The first part is heated to a first high temperature and the second part is cooled with the help of cooling means and is at a second temperature lower than 70° C. By controlling the heat conductivity between the wafer and at least one of the parts, the temperature of the wafer can be influenced to such an extent that during a certain period, the wafer takes on a temperature that is comparatively closer to the first, high temperature and then takes on a temperature which is comparatively closer to the second low temperature.Type: GrantFiled: June 27, 2002Date of Patent: August 3, 2004Assignee: ASM International N.V.Inventors: Ernst Hendrik August Granneman, Vladimir Ivanovich Kuznetsov, Arjen Benjamin Storm, Herbert Terhorst
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Patent number: 6746237Abstract: Method and device for the heat treatment of substrates, wherein the substrates are positioned in the vicinity of a heated, essentially flat furnace body extending over the surface of the substrate. In order to provide a reproducible treatment when treating a number of substrates successively, the temperature of the furnace body is measured so close to the surface adjacent to the substrate that the withdrawal of heat from the furnace body by the substrate can be detected. The introduction of each substrate takes place at a point in time when the temperature measured in this way is, within certain limits, equal to a desired initial treatment temperature Ttrig.Type: GrantFiled: May 16, 2002Date of Patent: June 8, 2004Assignee: ASM International N.V.Inventors: Arjen Storm, Ronald Bast, Vladimir Ivanovich Kuznetsov, Jan Zinger
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Patent number: 6719499Abstract: Device for the floating accommodation of a wafer. This device comprises two mutually opposite parts which delimit a chamber in which the wafer is placed. By gas being supplied from opposite sides, the wafer is held in a floating position. To prevent the wafer from touching the lateral boundaries, it is proposed to provide a discharge of gas at least partially near the circumference of the chamber wherein the wafer is accommodated. This discharge is realised such that if the wafer moves from the intended position to such a gas discharge, by closing of said gas discharge, the pressure is locally increased such that a force is generated acting in opposite direction to return the wafer in the intended position.Type: GrantFiled: October 9, 2001Date of Patent: April 13, 2004Assignees: ASM International N.V., Koninklijke Philips Electronics N.V.Inventors: Vladimir Ivanovich Kuznetsov, Sijbrand Radelaar, Jacobus Cornelis Gerardus Van Der Sanden, Theo Anjes Maria Ruijl
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Publication number: 20030101612Abstract: In an apparatus for a treatment of a wafer at elevated temperatures, the wafer is taken out of the reactor after heat treatment with the help of a mechanical transport apparatus which preferably grips the wafer around the circumference and on the under side. The transport apparatus includes a wafer surrounding ring. The wafer is placed in a floating wafer reactor where it is cooled in a controlled manner. Transport for further action or treatment then takes place.Type: ApplicationFiled: December 10, 2002Publication date: June 5, 2003Inventors: Ernst Hendrik August Granneman, Vladimir Ivanovich Kuznetsov, Gert Jan Snijders
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Publication number: 20030092231Abstract: In a method and apparatus for the thermal treatment of semiconductor substrates, such as a wafer, a wafer is brought into a heat treatment apparatus wherein the heat treatment apparatus comprises two substantially flat parts parallel to the introduction position of the wafer, between which the wafer is taken in. The first part is heated to a first high temperature and the second part is cooled with the help of cooling means and is at a second temperature lower than 70° C. By controlling the heat conductivity between the wafer and at least one of the parts, the temperature of the wafer can be influenced to such an extent that during a certain period, the wafer takes on a temperature that is comparatively closer to the first, high temperature and then takes on a temperature which is comparatively closer to the second low temperature.Type: ApplicationFiled: June 27, 2002Publication date: May 15, 2003Inventors: Ernst Hendrik August Granneman, Vladimir Ivanovich Kuznetsov, Arjen Benjamin Storm, Herbert Terhorst
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Patent number: 6561798Abstract: An apparatus for thermally processing a wafer at an elevated temperature, in which a processing position is bounded at least on one side by a housing part which, in use, is at an elevated temperature, the apparatus being provided with measuring means for determining the position of a wafer in the processing position before and/or during processing, the measuring means being provided with at least one signal processor and at least one signal conductor, the or each signal processor being located at a distance from the processing position in an area of lower temperature, the signal conductor extending through the housing part being at an elevated temperature and extending from a measuring point in or near the processing position to the signal processor for transmitting to the signal processor contactlessly obtained measuring signals, the at least one signal conductor, at least the part extending through the housing part being at an elevated temperature, being heat resistant.Type: GrantFiled: June 6, 2001Date of Patent: May 13, 2003Assignee: ASM International N.V.Inventors: Vladimir Ivanovich Kuznetsov, Bartholomeus Hans L. Lindeboom, Ronald Bast, Christianus Gerardus M. de Ridder
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Patent number: 6560896Abstract: Apparatus, method and system for the treatment of a wafer. After a treatment at elevated temperature, a wafer is taken out of the reactor in question with the help of a mechanical transport apparatus which preferably grips the wafer around the circumference and on the under side and consists of a wafer surrounding ring. The wafer is then placed in a floating wafer reactor where it is cooled in a controlled manner. Transport for further action or treatment then takes place.Type: GrantFiled: December 28, 2000Date of Patent: May 13, 2003Assignee: ASM International N.V.Inventors: Ernst Hendrik August Granneman, Vladimir Ivanovich Kuznetsov, Gert Jan Snijders
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Patent number: 6551404Abstract: An apparatus for treating a wafer manufactured from semiconducting material, the apparatus comprising a first and a second housing part arranged for movement away front and towards each other, the two housing parts bounding a treatment chamber, while around the treatment chamber there is provided a first groove connected to gas discharge means, while in at least one of the two boundary surfaces there is provided a second groove connected to gas feed means, the first groove being located radially within the second groove, and, in use, the pressure created by the gas feed means being such that from the second groove, gas flows both in radial inward and in radial outward direction in the gap between the first and the second boundary surface.Type: GrantFiled: December 22, 2000Date of Patent: April 22, 2003Assignee: ASM International N.V.Inventors: Gert-Jan Snijders, Vladimir Ivanovich Kuznetsov, Christianus Gerardus M. de Ridder, Herbert Terhorst
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Publication number: 20030027094Abstract: Method and device for the heat treatment of substrates, wherein the substrates are positioned in the vicinity of a heated, essentially flat furnace body extending over the surface of the substrate. In order to provide a reproducible treatment when treating a number of substrates successively, the temperature of the furnace body is measured so close to the surface adjacent to the substrate that the withdrawal of heat from the furnace body by the substrate can be detected. The introduction of each substrate takes place at a point in time when the temperature measured in this way is, within certain limits, equal to a desired initial treatment temperature Ttrig.Type: ApplicationFiled: May 16, 2002Publication date: February 6, 2003Inventors: Arjen Storm, Ronald Bast, Vladimir Ivanovich Kuznetsov, Jan Zinger
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Publication number: 20020024003Abstract: An apparatus for thermally processing a wafer at an elevated temperature, in which a processing position is bounded at least on one side by a housing part which, in use, is at an elevated temperature, the apparatus being provided with measuring means for determining the position of a wafer in the processing position before and/or during processing, the measuring means being provided with at least one signal processor and at least one signal conductor, the or each signal processor being located at a distance from the processing position in an area of lower temperature, the signal conductor extending through the housing part being at an elevated temperature and extending from a measuring point in or near the processing position to the signal processor for transmitting to the signal processor contactlessly obtained measuring signals, the at least one signal conductor, at least the part extending through the housing part being at an elevated temperature, being heat resistant.Type: ApplicationFiled: June 6, 2001Publication date: February 28, 2002Inventors: Vladimir Ivanovich Kuznetsov, Bartholomeus Hans Louis Lindeboom, Ronald Bast, Christianus Gerardus Maria de Ridder
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Publication number: 20020002951Abstract: Heating installation for a reactor. The reactor is provided with gas feed openings and gas discharge openings opening into a treatment chamber for accommodating a wafer floating therein. By means of such a treatment a wafer can be heated and cooled relatively rapidly. During the actual treatment it is important that the gas is heated sufficiently and to this end a heating installation is present. The latter consists of heating means, such as electrical heating means, arranged in a body which adjoins the reactor and in which channels have been made which connect into the gas feed openings and through which the treatment gas or other gas is fed.Type: ApplicationFiled: September 3, 1999Publication date: January 10, 2002Inventor: VLADIMIR IVANOVICH KUZNETSOV