Patents by Inventor Vladimir Korobov
Vladimir Korobov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11075244Abstract: Implementations of image sensors may include: a first die including a plurality of detectors adapted to convert photons to electrons; a second die including a plurality of transistors, passive electrical components, or both transistors and passive electrical components; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, passive electrical components, or transistors and passive electrical components of the second die may be adapted to enable operation of the plurality of detectors of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.Type: GrantFiled: March 15, 2019Date of Patent: July 27, 2021Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Marc Sulfridge, Vladimir Korobov
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Patent number: 10622391Abstract: An imaging system may include an image sensor package with through-oxide via connections between the image sensor die and the digital signal processing die in the image sensor package. The image sensor die and the digital signal processing die may be attached to each other. The through-oxide via may connect a bond pad on the image sensor die with metal routing paths in the image sensor and digital signal processing dies. The through-oxide via may simultaneously couple the image sensor die to the digital signal processing die. The through-oxide via may be formed through a shallow trench isolation structure in the image sensor die. The through-oxide via may be formed through selective etching of the image sensor and digital signal processing dies.Type: GrantFiled: March 8, 2017Date of Patent: April 14, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Vladimir Korobov, Marc Sulfridge
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Patent number: 10609312Abstract: An imaging pixel may have a fully depleted charge transfer path between a pinned photodiode and a floating diffusion region. A pinned transfer diode may be coupled between the pinned photodiode and the floating diffusion region. The imaging pixel may be formed in upper and lower substrates with an interconnect layer coupling the upper substrate to the lower substrate. The imaging pixel may include one or more storage diodes coupled between the transfer diode and the floating diffusion region. The imaging pixel may be used to capture high dynamic range images with flicker mitigation, images synchronized with light sources, or for high frame rate operation.Type: GrantFiled: November 13, 2017Date of Patent: March 31, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Sergey Velichko, Vladimir Korobov
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Publication number: 20190214424Abstract: Implementations of image sensors may include: a first die including a plurality of detectors adapted to convert photons to electrons; a second die including a plurality of transistors, passive electrical components, or both transistors and passive electrical components; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, passive electrical components, or transistors and passive electrical components of the second die may be adapted to enable operation of the plurality of detectors of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.Type: ApplicationFiled: March 15, 2019Publication date: July 11, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal BORTHAKUR, Marc SULFRIDGE, Vladimir KOROBOV
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Patent number: 10263030Abstract: Implementations of image sensors may include: a first die including a plurality of detectors adapted to convert photons to electrons; a second die including a plurality of transistors, passive electrical components, or both transistors and passive electrical components; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, passive electrical components, or transistors and passive electrical components of the second die may be adapted to enable operation of the plurality of detectors of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.Type: GrantFiled: January 18, 2017Date of Patent: April 16, 2019Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Marc Sulfridge, Vladimir Korobov
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Patent number: 10186535Abstract: Electronic devices may include High Dynamic Range (HDR) complementary metal-oxide-semiconductor (CMOS) image sensor arrays that are illuminated from the back side of the substrate and operate in a rolling shutter (RS) scanning mode. An image sensor may include stacked chips to improve image sensor performance. For example, by stacking photodiodes on top of each other and using dichroic dielectric layers in chip-to-chip isolation, sensor sensitivity may be increased, Moiré effect may be reduced, and the overall image sensor performance may be improved. Image sensors may include a charge sensing and charge storing scheme where charge generated by low incident light levels is transferred onto a charge sensing node of an in-pixel inverting feedback amplifier and charge generated by high incident light levels overflows a certain potential barrier built in the pixel, is stored on capacitors, and is sensed by a source follower.Type: GrantFiled: September 19, 2016Date of Patent: January 22, 2019Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jaroslav Hynecek, Vladimir Korobov
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Patent number: 10103190Abstract: An image sensor may include a symmetrical imaging pixel with a floating diffusion region. The floating diffusion region may be formed in the center of the imaging pixel. A shallow p-well may be formed around the floating diffusion region. A transfer gate configured to transfer charge from a photodiode to the floating diffusion region may be ring-shaped with an opening that overlaps the floating diffusion region. Isolation regions including deep trench isolation and a p-well may surround the photodiode of the imaging pixel. A p-stripe may couple the shallow p-well around the floating diffusion region to the isolation regions. The floating diffusion regions of neighboring pixels may be coupled together with additional conductive layers to implement shared configurations.Type: GrantFiled: May 13, 2016Date of Patent: October 16, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Vladimir Korobov, Robert Michael Guidash
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Patent number: 10002895Abstract: An image sensor pixel may include a photodiode, a floating diffusion, and a transfer gate. A buried channel may be formed under the transfer gate. The buried channel may extend from the floating diffusion to overlap a portion of the transfer gate without extending completely beneath the transfer gate or reaching the photodiode. The buried channel may provide a path for antiblooming current from the photodiode to reach the floating diffusion, while allowing for the transfer gate off voltage to remain high enough to prevent transfer gate dark current from flowing into the photodiode.Type: GrantFiled: October 14, 2016Date of Patent: June 19, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Daniel Tekleab, Muhammad Maksudur Rahman, Eric Gordon Stevens, Bartosz Piotr Banachowicz, Robert Michael Guidash, Vladimir Korobov
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Patent number: 9991306Abstract: In one form, a hybrid bonded image sensor comprises a photodiode chip, a circuit carrying chip, and an interconnection. The photodiode chip provides charge to a first floating diffusion in response to incident light, wherein the first floating diffusion is coupled to a first terminal on a first surface of the photodiode chip. The circuit carrying chip has a first terminal aligned with the first terminal of the photodiode chip, the circuit carrying chip forming an output voltage based on charge transferred on the first floating diffusion sensed from the first terminal thereof. The interconnection connects the first terminal of the photodiode chip to the first terminal of the circuit carrying chip.Type: GrantFiled: May 13, 2016Date of Patent: June 5, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jaroslav Hynecek, Vladimir Korobov
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Publication number: 20180084164Abstract: Electronic devices may include High Dynamic Range (HDR) complementary metal-oxide-semiconductor (CMOS) image sensor arrays that are illuminated from the back side of the substrate and operate in a rolling shutter (RS) scanning mode. An image sensor may include stacked chips to improve image sensor performance. For example, by stacking photodiodes on top of each other and using dichroic dielectric layers in chip-to-chip isolation, sensor sensitivity may be increased, Moiré effect may be reduced, and the overall image sensor performance may be improved. Image sensors may include a charge sensing and charge storing scheme where charge generated by low incident light levels is transferred onto a charge sensing node of an in-pixel inverting feedback amplifier and charge generated by high incident light levels overflows a certain potential barrier built in the pixel, is stored on capacitors, and is sensed by a source follower.Type: ApplicationFiled: September 19, 2016Publication date: March 22, 2018Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jaroslav HYNECEK, Vladimir KOROBOV
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Publication number: 20180070031Abstract: An imaging pixel may have a fully depleted charge transfer path between a pinned photodiode and a floating diffusion region. A pinned transfer diode may be coupled between the pinned photodiode and the floating diffusion region. The imaging pixel may be formed in upper and lower substrates with an interconnect layer coupling the upper substrate to the lower substrate. The imaging pixel may include one or more storage diodes coupled between the transfer diode and the floating diffusion region. The imaging pixel may be used to capture high dynamic range images with flicker mitigation, images synchronized with light sources, or for high frame rate operation.Type: ApplicationFiled: November 13, 2017Publication date: March 8, 2018Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Sergey VELICHKO, Vladimir KOROBOV
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Patent number: 9854184Abstract: An imaging pixel may have a fully depleted charge transfer path between a pinned photodiode and a floating diffusion region. A pinned transfer diode may be coupled between the pinned photodiode and the floating diffusion region. The imaging pixel may be formed in upper and lower substrates with an interconnect layer coupling the upper substrate to the lower substrate. The imaging pixel may include one or more storage diodes coupled between the transfer diode and the floating diffusion region. The imaging pixel may be used to capture high dynamic range images with flicker mitigation, images synchronized with light sources, or for high frame rate operation.Type: GrantFiled: June 8, 2016Date of Patent: December 26, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Sergey Velichko, Vladimir Korobov
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Publication number: 20170358617Abstract: An image sensor pixel may include a photodiode, a floating diffusion, and a transfer gate. A buried channel may be formed under the transfer gate. The buried channel may extend from the floating diffusion to overlap a portion of the transfer gate without extending completely beneath the transfer gate or reaching the photodiode. The buried channel may provide a path for antiblooming current from the photodiode to reach the floating diffusion, while allowing for the transfer gate off voltage to remain high enough to prevent transfer gate dark current from flowing into the photodiode.Type: ApplicationFiled: October 14, 2016Publication date: December 14, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Daniel TEKLEAB, Muhammad Maksudur RAHMAN, Eric Gordon STEVENS, Bartosz Piotr BANACHOWICZ, Robert Michael GUIDASH, Vladimir KOROBOV
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Publication number: 20170330906Abstract: An image sensor may include a symmetrical imaging pixel with a floating diffusion region. The floating diffusion region may be formed in the center of the imaging pixel. A shallow p-well may be formed around the floating diffusion region. A transfer gate configured to transfer charge from a photodiode to the floating diffusion region may be ring-shaped with an opening that overlaps the floating diffusion region. Isolation regions including deep trench isolation and a p-well may surround the photodiode of the imaging pixel. A p-stripe may couple the shallow p-well around the floating diffusion region to the isolation regions. The floating diffusion regions of neighboring pixels may be coupled together with additional conductive layers to implement shared configurations.Type: ApplicationFiled: May 13, 2016Publication date: November 16, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Vladimir KOROBOV, Robert Michael GUIDASH
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Publication number: 20170257578Abstract: An imaging pixel may have a fully depleted charge transfer path between a pinned photodiode and a floating diffusion region. A pinned transfer diode may be coupled between the pinned photodiode and the floating diffusion region. The imaging pixel may be formed in upper and lower substrates with an interconnect layer coupling the upper substrate to the lower substrate. The imaging pixel may include one or more storage diodes coupled between the transfer diode and the floating diffusion region. The imaging pixel may be used to capture high dynamic range images with flicker mitigation, images synchronized with light sources, or for high frame rate operation.Type: ApplicationFiled: June 8, 2016Publication date: September 7, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Sergey VELICHKO, Vladimir KOROBOV
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Publication number: 20170179176Abstract: An imaging system may include an image sensor package with through-oxide via connections between the image sensor die and the digital signal processing die in the image sensor package. The image sensor die and the digital signal processing die may be attached to each other. The through-oxide via may connect a bond pad on the image sensor die with metal routing paths in the image sensor and digital signal processing dies. The through-oxide via may simultaneously couple the image sensor die to the digital signal processing die. The through-oxide via may be formed through a shallow trench isolation structure in the image sensor die. The through-oxide via may be formed through selective etching of the image sensor and digital signal processing dies.Type: ApplicationFiled: March 8, 2017Publication date: June 22, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal BORTHAKUR, Vladimir KOROBOV, Marc SULFRIDGE
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Publication number: 20170170223Abstract: In one form, a hybrid bonded image sensor comprises a photodiode chip, a circuit carrying chip, and an interconnection. The photodiode chip provides charge to a first floating diffusion in response to incident light, wherein the first floating diffusion is coupled to a first terminal on a first surface of the photodiode chip. The circuit carrying chip has a first terminal aligned with the first terminal of the photodiode chip, the circuit carrying chip forming an output voltage based on charge transferred on the first floating diffusion sensed from the first terminal thereof. The interconnection connects the first terminal of the photodiode chip to the first terminal of the circuit carrying chip.Type: ApplicationFiled: May 13, 2016Publication date: June 15, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jaroslav HYNECEK, Vladimir KOROBOV
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Patent number: 9679936Abstract: An imaging system may include an image sensor package with through-oxide via connections between the image sensor die and the digital signal processing die in the image sensor package. The image sensor die and the digital signal processing die may be attached to each other. The through-oxide via may connect a bond pad on the image sensor die with metal routing paths in the image sensor and digital signal processing dies. The through-oxide via may simultaneously couple the image sensor die to the digital signal processing die. The through-oxide via may be formed through a shallow trench isolation structure in the image sensor die. The through-oxide via may be formed through selective etching of the image sensor and digital signal processing dies.Type: GrantFiled: February 27, 2014Date of Patent: June 13, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Vladimir Korobov, Marc Sulfridge
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Publication number: 20170125472Abstract: Implementations of image sensors may include: a first die including a plurality of detectors adapted to convert photons to electrons; a second die including a plurality of transistors, passive electrical components, or both transistors and passive electrical components; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, passive electrical components, or transistors and passive electrical components of the second die may be adapted to enable operation of the plurality of detectors of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.Type: ApplicationFiled: January 18, 2017Publication date: May 4, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal BORTHAKUR, Marc SULFRIDGE, Vladimir KOROBOV
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Patent number: 9583525Abstract: An image sensor. Implementations may include: a first die including a plurality of pixels; a second die including a plurality of transistors, capacitors, or both transistors and capacitors; a third die including analog circuitry, logic circuitry, or analog and logic circuitry. The first die may be hybrid bonded to the second die, and the second die may be fusion bonded to the third die. The plurality of transistors, capacitors or transistors and capacitors of the second die may be adapted to enable operation of the plurality of pixels of the first die. The analog circuitry, logic circuitry, and analog circuitry and logical circuitry may be adapted to perform signal routing.Type: GrantFiled: June 2, 2015Date of Patent: February 28, 2017Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Marc Sulfridge, Vladimir Korobov