Abstract: A method of longitudinal recording using a medium with a magnetically soft underlayer is described. The method includes lowering the longitudinal coercivity in a magnetic domain in the magnetic recording medium by generating a vertical component of magnetic flux in the magnetic recording medium and writing a longitudinal orientation in the magnetic domain in the magnetic recording medium by generating a larger horizontal component of magnetic flux in the magnetic recording medium using the write head. Optionally the method further includes magnetically saturating the magnetically soft underlayer after lowering the longitudinal coercivity to limit the vertical component of the magnetic flux. The recording medium has a magnetic recording layer, a spacer layer and a soft underlayer. In one embodiment the soft underlayer is an antiferromagnetically coupled magnetic layer stack with two soft magnetic layers separated by a non-magnetic spacer layer selected to achieve the antiferromagnetic coupling.

Abstract: A magnetic write head having a vertically laminated back gap structure and method of making the same are disclosed. The magnetic head is formed with lower and upper pole pieces and a back gap structure which connects the lower and the upper pole pieces in a back gap region. In one illustrative example, the back gap is a vertically laminated structure having alternating layers of magnetic and non-magnetic materials. Each alternating layer is perpendicular to both the lower and the upper pole pieces. This vertically laminated structure significantly reduces the eddy currents in the back gap region at high operating frequencies as the layers are oriented in a direction parallel with the magnetic flux.

Abstract: A magnetic tunnel junction (MTJ) memory array having a magnetically stable free layer that can be switched from one memory state to another with a minimum of energy input. The memory array includes a MTJ cell having an antiparallel coupled free layer. An electrically conductive word line passes through the free layer such that current passed through the electrically conductive word line induces a magnetic field that acts on antiparallel coupled layers of the free layer causing their magnetizations to rotate while remaining antiparallel to one another.

Abstract: An apparatus for patterning a self-aligned coil using a damascene process is disclosed. Coil pockets are formed in a first insulation layer disposed over a first pole layer. A barrier/seed layer is deposited along walls of the coil pockets in the insulation layer. Copper is formed in the coil pockets and over the insulation layer. The copper is planarized down to the insulation layer. The self-aligned coil process packs more copper into the same coil pocket and relaxes the coil alignment tolerance. Protrusions are prevented because of the more efficient and uniform spacing of the coil to reduce heat buildup in the head during a write.

Abstract: A method for patterning a self-aligned coil using a damascene process is disclosed. Coil pockets are formed in a first insulation layer disposed over a first pole layer. A barrier/seed layer is deposited along walls of the coil pockets in the insulation layer. Copper is formed in the coil pockets and over the insulation layer. The copper is planarized down to the insulation layer. The self-aligned coil process packs more copper into the same coil pocket and relaxes the coil alignment tolerance. Protrusions are prevented because of the more efficient and uniform spacing of the coil to reduce heat buildup in the head during a write.

Abstract: A magnetic transducer including an electrically conductive shield (ECS) which is disposed between the substrate and first magnetic shield is described. The ECS is preferably embedded in an insulating undercoat layer. The ECS is preferably electrically isolated from the magnetic sensor element and is externally connected to a ground available in the disk drive through the arm electronics. Two alternative ways for connecting the ECS to a ground are described. In one embodiment which is only effective with single-ended input type arm electronics, the ECS is connected to a ground through a via to a lead pad for the read head which is connected to the ground of the arm electronics. In a second and more preferred embodiment a separate lead pad is included on the head to allow the ECS to be connected to electronic or case ground when the head is installed in the arm. The extent of the ECS should be sufficiently large to cover the read head portion of the transducer, i.e.

Abstract: Magnetic heads having write coil structures with reduced electrical resistances for reducing thermal protrusion are disclosed. In one illustrative example, a magnetic head includes a magnetic yoke; a write gap layer formed between upper and lower poles of the magnetic yoke; and a write coil having a plurality of coil layers. Each coil layer of the write coil extends continuously between the upper and the lower poles through a plane defined by the write gap layer. Preferably, the write coil is formed using a damascene process, such that each coil layer is wider than each coil separating layer. Such a structure provides for a relatively large amount of coil materials to be used, which reduces the coil's electrical resistance. This, in turn, reduces the heat generated by the write coils during operation.

Abstract: A method for fabricating a soft ferromagnetic film structure with reduced edge stress anisotropy and enhanced magnetization switching speed. A soft ferromagnetic film structure is formed over an underlying structure. The soft ferromagnetic film structure has one or more edges exhibiting edge stress anisotropy. A non-ferromagnetic film structure is formed along the one or more edges to induce stress contributions therein that control the edge stress anisotropy.

Abstract: A new method of performing the write operation on the MRAM bit cell with improved switching selectivity and lower write current requirements is achieved utilizing oscillating word write currents at frequency near the ferromagnetic resonance frequency of the free layer, combined with the shift in said frequency due to the magnetic field produced by the current in the bit line. Operation is implemented in a conventional magnetic random access memory having a plurality of magnetoresisitive cells formed by an intersection of a grid of word and bit lines, wherein an individual cell within the grid can be selected and switched from one magnetic state to another by the magnetic fields produced by the currents in the word and bit lines.

Abstract: A new method of performing the write operation on the MRAM bit cell with improved switching selectivity and lower write current requirements is achieved utilizing oscillating word write currents at frequency near the ferromagnetic resonance frequency of the free layer, combined with the shift in said frequency due to the magnetic field produced by the current in the bit line. Operation is implemented in a conventional magnetic random access memory having a plurality of magnetoresisitive cells formed by an intersection of a grid of word and bit lines, wherein an individual cell within the grid can be selected and switched from one magnetic state to another by the magnetic fields produced by the currents in the word and bit lines.

Abstract: A switch arrangement includes a MEMS switch connected to a voltage supply system. The MEMS switch has a mechanical resonant frequency. The voltage supply system has a capability for supplying a voltage with a frequency corresponding to the mechanical resonant frequency of the switch. A method includes providing a MEMS switch including a movable part which has a mechanical resonant frequency, and then supplying an AC voltage to the movable part. The AC voltage has a frequency corresponding to the mechanical resonant frequency of the movable part.

Abstract: A method for fabricating a soft ferromagnetic film structure with reduced edge stress anisotropy and enhanced magnetization switching speed. A soft ferromagnetic film structure is formed over an underlying structure. The soft ferromagnetic film structure has one or more edges exhibiting edge stress anisotropy. A non-ferromagnetic film structure is formed along the one or more edges to induce stress contributions therein that control the edge stress anisotropy.

Abstract: A novel magnetic imaging microscope test system with high spatial (1-10 nm) and temporal (˜1 ns) resolution of the magnetic field is disclosed, as well as the system application for characterization of read and write heads for magnetic recording. The test system includes a scanner assembly and a work piece holder for holding a work piece to be tested. The scanner assembly and the work piece holder are positionable relative to each other at very fine resolution during scanning. A probe arm is cantilevered from the scanner assembly to bring a probe head into close proximity to the work piece holder. The probe head is configured scan a work piece in contacting engagement therewith so that a magnetic device on the probe head magnetically interacts with a magnetic field generating or magnetic field sensing device on the work piece. A probe head for use in the test system and a related test method are also disclosed.

Abstract: A magnetic write head having a vertically laminated back gap structure and method of making the same are disclosed. The magnetic head is formed with lower and upper pole pieces and a back gap structure which connects the lower and the upper pole pieces in a back gap region. In one illustrative example, the back gap is a vertically laminated structure having alternating layers of magnetic and non-magnetic materials. Each alternating layer is perpendicular to both the lower and the upper pole pieces. This vertically laminated structure significantly reduces the eddy currents in the back gap region at high operating frequencies as the layers are oriented in a direction parallel with the magnetic flux.

Abstract: A magnetic tunnel junction (MTJ) memory array having a magnetically stable free layer that can be switched from one memory state to another with a minimum of energy input. The memory array includes a MTJ cell having an antiparallel coupled free layer. An electrically conductive word line passes through the free layer such that current passed through the electrically conductive word line induces a magnetic field that acts on antiparallel coupled layers of the free layer causing their magnetizations to rotate while remaining antiparallel to one another.

Abstract: An effective heat sink is provided for a magnetic recording head. The heat sink conducts heat away from the recording head thus limiting the range of temperatures to which the recording head is subjected. A heat sink on a recording head significantly reduces heat induced protrusion.

Abstract: A method for fabricating a soft ferromagnetic film structure with reduced edge stress anisotropy and enhanced magnetization switching speed. A soft ferromagnetic film structure is formed over an underlying structure. The soft ferromagnetic film structure has one or more edges exhibiting edge stress anisotropy. A non-ferromagnetic film structure is formed along the one or more edges to induce stress contributions therein that control the edge stress anisotropy.

Abstract: Disclosed is a system and a method for reducing high frequency interference pickup by the read element of the magneto-recording head. The reduction is achieved by reducing the parisitic capacitance between certain elements of the magnetic head. In one embodiment, the areas of the pads and leads, including the areas of the leads over the S1 and the areas of the sensor leads, are reduced. A second implementation involves increasing the separation between the pads and leads and the substrate material. Copper studs or vias may be used to connect the contact pads and the underlying layers. A third implementation includes using a low dielectric constant material as a spacer layer between conductors (leads, pads, magnetic shields) and the substrate.

Abstract: A method for fabricating a soft ferromagnetic film structure with reduced edge stress anisotropy and enhanced magnetization switching speed. A soft ferromagnetic film structure is formed over an underlying structure. The soft ferromagnetic film structure has one or more edges exhibiting edge stress anisotropy. A non-ferromagnetic film structure is formed along the one or more edges to induce stress contributions therein that control the edge stress anisotropy.

Abstract: A switch arrangement includes a MEMS switch connected to a voltage supply system. The MEMS switch has a mechanical resonant frequency. The voltage supply system has a capability for supplying a voltage with a frequency corresponding to the mechanical resonant frequency of the switch. A method includes providing a MEMS switch including a movable part which has a mechanical resonant frequency, and then supplying an AC voltage to the movable part. The AC voltage has a frequency corresponding to the mechanical resonant frequency of the movable part.