Abstract: The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.

Abstract: A chemical mechanical polishing slurry precursor comprising urea, a second oxidizer, an organic acid, and an abrasive, and a method for using the chemical mechanical polishing slurry precursor to prepare a chemical mechanical polishing slurry with a first oxidizer and thereafter using the slurry to remove titanium, titanium nitride, and an aluminum alloy containing layers from a substrate.

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

Abstract: The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

Abstract: The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.

Abstract: A chemical mechanical polishing slurry precursor comprising urea, a second oxidizer, an organic acid, and an abrasive, and a method for using the chemical mechanical polishing slurry precursor to prepare a chemical mechanical polishing slurry with a first oxidizer and thereafter using the slurry to remove titanium, titanium nitride, and an aluminum alloy containing layers from a substrate.

Abstract: A chemical mechanical polishing slurry comprising a first oxidizer of urea hydrogen peroxide, a second oxidizer, an organic acid, and an abrasive, and a method for using the chemical mechanical polishing slurry to remove titanium, titanium nitride, and an aluminum alloy containing layer from a substrate.

Abstract: A composition containing a polymeric matrix and a conductive filler component is provided. The conductive filler component comprises conductive particles and a polymer selected from the group consisting of substituted and unsubstituted polyanilines, substituted and unsubstituted polyparaphenylenevinylenes, substituted and unsubstituted polythiophenes, substituted and unsubstituted polyazines, substituted and unsubstituted polyparaphenylenes, substituted and unsubstituted polyfuranes, substituted and unsubstituted polypyrroles, substituted and unsubstituted polyselenophene, substituted and unsubstituted poly-p-phenylene sulfides and substituted and unsubstituted polyacetylenes, and mixtures thereof, and copolymers thereof. Compositions of the present invention are useful as corrosion protecting layers for metal substrates, for electrostatic discharge protection, electromagnetic interference shielding, and as adhesives for interconnect technology as alternatives to solder interconnections.

Abstract: Electrostatic discharge protection or electromagnetic interference shielding is provided by applying a composition comprising a thermoset or thermoplastic polymeric matrix, and a conductive filler component, where said filler component comprises electrically conductive particles and at least one conducting polymer to a dielectric substrate.

Abstract: A composition containing a polymeric matrix and a conductive filler component is provided. The conductive filler component comprises conductive particles and a polymer selected from the group consisting of substituted and unsubstituted polyanilines, substituted and unsubstituted polyparaphenylenevinylenes, substituted and unsubstituted polythiophenes, substituted and unsubstituted polyazines, substituted and unsubstituted polyparaphenylenes, substituted and unsubstituted polyfuranes, substituted and unsubstituted polypyrroles, substituted and unsubstituted polyselenophene, substituted and unsubstituted poly-p-phenylene sulfides and substiututed and unsubstituted polyacetylenes, and mixtures thereof, and copolymers thereof. Compositions of the present invention are useful as corrosion protecting layers for metal substrates, for electrostatic discharge protection, electromagnetic interference shielding, and as adhesives for interconnect technology as alternatives to solder interconnections.

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, an oxidizer, a complexing agent and an abrasive, and a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

Abstract: A composite comprising a metal substrate and as a corrosion protecting layer on at least one major surface of said substrate, a composition comprising a thermoset or thermoplastic polymeric matrix, and a conductive filler component, where said filler component comprises electrically conductive particles.

Abstract: Electrostatic discharge protection and electromagnetic interference shielding is provided by applying to a dielectric substrate a composition comprising a polymeric matrix and a conductive filler component. The conductive filler component comprises electrically conductive metal particles and at least one electrically conducting polymer.

Abstract: A polishing slurry for chemically mechanically polishing metal layers and films during the various stages of multilevel interconnect fabrication associated with integrated circuit manufacturing. The slurry includes an aqueous medium, an abrasive, an oxidizing agent, and an organic acid. The polishing slurry has been found to significantly lower or inhibit the silicon dioxide polishing rate, thus yielding enhanced selectivity. In addition, the polishing slurry is useful in providing effective polishing to metal layers at desired polishing rates while minimizing surface imperfections and defects.Also disclosed is a method for producing coplanar metal/insulator films on a substrate utilizing the slurry of the present invention and chemical mechanical polishing technique relating thereto.

Abstract: A chemical mechanical polishing slurry comprising at least two oxidizing agents, an organic acid and an abrasive and a method for using the chemical mechanical polishing slurry to remove titanium, titanium nitride, and an aluminum alloy containing layer from a substrate.

Abstract: A composition containing a polymeric matrix and a conductive filler component is provided. The conductive filler component comprises conductive particles and a polymer selected from the group consisting of substituted and unsubstituted polyanilines, substituted and unsubstituted polyparaphenylenevinylenes, substituted and unsubstituted polythiophenes, substituted and unsubstituted polyazines, substituted and unsubstituted polyparaphenylenes, substituted and unsubstituted polyfuranes, substituted and unsubstituted polypyrroles, substituted and unsubstituted polyselenophene, substituted and unsubstituted poly-p-phenylene sulfides and substituted and unsubstituted polyacetylenes, and mixtures thereof, and copolymers thereof. The compositions of the present invention are useful as adhesives for interconnecting a semiconductor chip to a substrate.

Abstract: A process for electrolessly depositing cobalt-tin alloys with adjustable tin contents from 1 to over 25 atomic percent tin is disclosed. The deposited alloy is useful in the electronics and computer industries for device, chip interconnection and packaging applications. When used for chip interconnection applications, for example, the invention replaces the currently used complicated ball-limiting-metallurgy. The invention may also be used to inhibit hillock formation and electromigration in copper wire structures found in computers and micron dimension electronic devices.

Abstract: A composition containing a polymeric matrix and a conductive filler component is provided. The conductive filler component comprises conductive particles and a polymer selected from the group consisting of substituted and unsubstituted polyanilines, substituted and unsubstituted polyparaphenylenevinylenes, substituted and unsubstituted polythiophenes, substituted and unsubstituted polyazines, substituted and unsubstituted polyparaphenylenes, substituted and unsubstituted polyfuranes, substituted and unsubstituted polypyrroles, substituted and unsubstituted polyselenophene, substituted and unsubstituted poly-p-phenylene sulfides and substiututed and unsubstituted polyacetylenes, and mixtures thereof, and copolymers thereof. Compositions of the present invention are useful as corrosion protecting layers for metal substrates, for electrostatic discharge protection, electromagnetic interference shielding, and as adhesives for interconnect technology as alternatives to solder interconnections.

Abstract: A corrosion protecting film layer is formed on a non-passivating non-noble metal, such as cobalt, by placing the metal in a dilute solution of Cu.sup.+2 ions and benzotriazole (1 H-BTA). Exposure of the metal to a solution containing Cu.sup.+2 and 1 H-BTA results in a spontaneous interaction of Cu.sup.+2 and the metal to produce a film layer of Cu(I) BTA on the metal surface to create a permanent corrosion protection for the metal. A borate buffer, such as boric acid and a borate, can be added to the solution to adjust the pH of the solution to be in the range between 8 and 9.