Abstract: The present invention provides a plating apparatus with multiple anode zones and cathode zones. The electrolyte flow field within each zone is controlled individually with independent flow control devices. A gas bubble collector whose surface is made into pleated channels is implemented for gas removal by collecting small bubbles, coalescing them, and releasing the residual gas. A buffer zone built within the gas bubble collector further allows unstable microscopic bubbles to dissolve.

Abstract: The present invention provides an apparatus and method for rapid and uniform thermal treatment of semiconductor workpieces in two closely arranged thermal treatment chambers with a retractable door between them. The retractable door moves in between two thermal treatment chambers during heating or cooling process, and additional heating and cooling sources are provided for double-side thermal treatment of the semiconductor workpiece.

Abstract: An apparatus for electropolishing and/or electroplating metal layers on a semiconductor wafer includes a receptacle having a plurality of section walls. The apparatus includes a wafer chuck configured to hold the semiconductor wafer and to position the semiconductor wafer within the receptacle with a surface of the semiconductor wafer adjacent to top portions of the plurality of section walls. The apparatus also includes a first plurality of sensors configured to measure alignment between the center of one of the plurality of section walls to the center of the wafer chuck, and thus the center of the semiconductor wafer.

Abstract: In one aspect of the present invention, exemplary apparatus and methods are provided for electropolishing and/or electroplating processes for semiconductor wafers. One exemplary apparatus includes a cleaning module having an edge clean assembly (930) to remove metal residue on the bevel or edge portion of a wafer (901). The edge cleaning apparatus includes a nozzle head (1030) configured to supply a liquid and a gas to a major surface of the wafer, and supplies the gas radially inward of the location the liquid is supplied to reduce the potential of the liquid from flowing radially inward to the metal film formed on the wafer.

Abstract: In one aspect of the present invention, an exemplary apparatus and method are provided for electropolishing a conductive film on a wafer. An apparatus includes a wafer chuck for holding a wafer, an actuator for rotating the wafer chuck, and a nozzle configured to electropolish the wafer. The apparatus may further include a conductive ring or a shroud. A method of electropolishing a conductive film on a wafer includes rotating a wafer chuck with sufficient speed such that electrolyte fluid incident upon the wafer flows on the surface of the wafer towards the edge of the wafer.

Abstract: A cell to electroplate and/or electropolish semiconductor wafers includes an electrolyte receptacle and a wafer chuck assembly. The cell also includes a first actuator configured to translate the wafer chuck assembly between a first position and a second position, where the wafer chuck assembly covers the electrolyte receptacle in the first position and retracts from the electrolyte receptacle in the second position.

Abstract: A wafer chuck assembly for holding a wafer during electroplating and/or electropolishing of the wafer includes a wafer chuck for receiving the wafer. The wafer chuck assembly also includes an actuator assembly for moving the wafer chuck between a first and a second position. When in the first position, the wafer chuck is opened. When in the second position, the wafer chuck is closed.