Patents by Inventor Volker Grimm

Volker Grimm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of adjusting etch selectivity by adapting aspect ratios in a multi-level etch process
    Patent number: 6969676
    Abstract: The present invention discloses a technique for controlling a local etch rate in forming multi-level contact openings, for example, in forming substrate contact openings and transistor contact openings of an SOI device. The aspect ratio dependent etch rate is correspondingly adapted by selecting in advance suitable aspect ratios for the contact openings so that the etch front may reach the respective final depth within a limited time interval.
    Type: Grant
    Filed: December 23, 2003
    Date of Patent: November 29, 2005
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Christoph Schwan, Gunter Grasshoff, Volker Grimm
  • Methods of forming a transistor having a recessed gate electrode structure
    Patent number: 6897114
    Abstract: In manufacturing a recessed gate transistor, a channel implantation and a source/drain implantation are performed by means of a single implantation mask prior to the formation of a gate opening. Thereafter, the gate opening is formed to a depth that extends substantially to the channel implant so that raised drain and source regions are created which are substantially even with the gate electrode formed in the gate opening. Consequently, expensive and complex epitaxial growth steps can be avoided.
    Type: Grant
    Filed: June 30, 2003
    Date of Patent: May 24, 2005
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Christian Krueger, Thomas Feudel, Volker Grimm
  • Method of adjusting etch selectivity by adapting aspect ratios in a multi-level etch process
    Publication number: 20040241984
    Abstract: The present invention discloses a technique for controlling a local etch rate in forming multi-level contact openings, for example, in forming substrate contact openings and transistor contact openings of an SOI device. The aspect ratio dependent etch rate is correspondingly adapted by selecting in advance suitable aspect ratios for the contact openings so that the etch front may reach the respective final depth within a limited time interval.
    Type: Application
    Filed: December 23, 2003
    Publication date: December 2, 2004
    Inventors: Christoph Schwan, Gunter Grasshoff, Volker Grimm
  • Advanced recessed gate transistor and a method of forming the same
    Publication number: 20040126965
    Abstract: In manufacturing a recessed gate transistor, a channel implantation and a source/drain implantation are performed by means of a single implantation mask prior to the formation of a gate opening. Thereafter, the gate opening is formed to a depth that extends substantially to the channel implant so that raised drain and source regions are created which are substantially even with the gate electrode formed in the gate opening. Consequently, expensive and complex epitaxial growth steps can be avoided.
    Type: Application
    Filed: June 30, 2003
    Publication date: July 1, 2004
    Inventors: Christian Krueger, Thomas Feudel, Volker Grimm