Abstract: A method for manufacturing an edge emitting semiconductor laser chip, which has a carrier substrate, an interlayer arranged between the carrier substrate and a component structure of the edge emitting semiconductor laser chip. The interlayer is adapted to provide adhesion between the carrier substrate and the component structure. The component structure has an active zone provided for generating radiation.

Abstract: A radiation-emitting semiconductor body with a carrier substrate. A structured connection is produced between a semiconductor layer sequence (2) and a carrier substrate wafer (1). The semiconductor layer sequence is subdivided into a plurality of semiconductor layer stacks (200) by means of cuts (6) through the semiconductor layer sequence, and the carrier substrate wafer (1) is subdivided into a plurality of carrier substrates (100) by means of cuts (7) through the carrier substrate wafer (1). In the method, the structured connection is formed in such a way that at least one semiconductor layer stack (200) is connected to one and only one associated carrier substrate (100). In addition, at least one cut (7) through the carrier substrate wafer is not extended by any of the cuts (6) through the semiconductor layer sequence such that a straight cut results through the carrier substrate wafer and the semiconductor layer sequence.

Abstract: A light-emitting device, comprising: a radiation source (5), which emits radiation having a first wavelength, an optical waveguide (10), into which the radiation emitted by the radiation source is coupled, and a converter material (15), which converts the radiation transported through the optical waveguide (10) into light (20) having a second, longer wavelength. A light-emitting device of this type can have an improved light conversion efficiency.

Abstract: A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

Abstract: A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.

Abstract: A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.

Abstract: A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

Abstract: Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.

Abstract: An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.

Abstract: A radiation-emitting semiconductor body with a carrier substrate and a method for producing the same. In the method, a structured connection is produced between a semiconductor layer sequence (2) and a carrier substrate wafer (1). The semiconductor layer sequence is subdivided into a plurality of semiconductor layer stacks (200) by means of cuts (6) through the semiconductor layer sequence, and the carrier substrate wafer (1) is subdivided into a plurality of carrier substrates (100) by means of cuts (7) through the carrier substrate wafer (1). In the method, the structured connection is formed in such a way that at least one semiconductor layer stack (200) is connected to one and only one associated carrier substrate (100). In addition, at least one cut (7) through the carrier substrate wafer is not extended by any of the cuts (6) through the semiconductor layer sequence such that a straight cut results through the carrier substrate wafer and the semiconductor layer sequence.

Abstract: An arrangement comprising a fiber-optic waveguide (10) and a detection device (25), wherein the fiber-optic waveguide (10) comprises a core region (10E) and a cladding region (10C) surrounding the core region (10E), wherein the core region has a higher refractive index than the cladding region, and wherein the detection device (25) can detect damage to the fiber-optic waveguide (10).

Abstract: Presented is a method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with at least one semiconductor layer. The method involves providing a chip composite base that includes a substrate and a growth surface. A mask material layer is formed on the growth surface. The mask material layer includes a multiplicity of windows having an average extent of less than or equal to 1 ?m. A mask material is chosen so that a semiconductor material of the semiconductor layer that is to be grown essentially cannot grow on the mask material or can grow in a substantially worse manner in comparison with the growth surface. Subsequently, semiconductor layers are deposited essentially simultaneously onto regions of the growth surface that lie within the windows. The chip composite base with applied material is singulated to form semiconductor chips.

Abstract: A radiation-emitting semiconductor body with a carrier substrate. A structured connection is produced between a semiconductor layer sequence (2) and a carrier substrate wafer (1). The semiconductor layer sequence is subdivided into a plurality of semiconductor layer stacks (200) by means of cuts (6) through the semiconductor layer sequence, and the carrier substrate wafer (1) is subdivided into a plurality of carrier substrates (100) by means of cuts (7) through the carrier substrate wafer (1). In the method, the structured connection is formed in such a way that at least one semiconductor layer stack (200) is connected to one and only one associated carrier substrate (100). In addition, at least one cut (7) through the carrier substrate wafer is not extended by any of the cuts (6) through the semiconductor layer sequence such that a straight cut results through the carrier substrate wafer and the semiconductor layer sequence.

Abstract: A method for manufacturing an edge emitting semiconductor laser chip, which has a carrier substrate, an interlayer arranged between the carrier substrate and a component structure of the edge emitting semiconductor laser chip. The interlayer is adapted to provide adhesion between the carrier substrate and the component structure. The component structure has an active zone provided for generating radiation.

Abstract: Optoelectronic components with a semiconductor chip, which is suitable for emitting primary electromagnetic radiation, a basic package body, which has a recess for receiving the semiconductor chip and electrical leads for the external electrical connection of the semiconductor chip, and a chip encapsulating element, which encloses the semiconductor chip in the recess. The basic package body is at least partly optically transmissive at least for part of the primary radiation and an optical axis of the semiconductor chip runs through the basic package body. The basic package body comprises a luminescence conversion material, which is suitable for converting at least part of the primary radiation into secondary radiation with wavelengths that are at least partly changed in comparison with the primary radiation.

Abstract: A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.

Abstract: A radiation-emitting thin-film semiconductor component with a multilayer structure (12) based on GaN, which contains an active, radiation-generating layer (14) and has a first main area (16) and a second main area (18)—remote from the first main area—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main area (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main area (18) of the multilayer structure is patterned one- or two-dimensionally.

Abstract: A method for laterally dividing a semiconductor wafer (1) comprises the method steps of: providing a growth substrate (2); epitaxially growing a semiconductor layer sequence (3), which comprises a functional semiconductor layer (5), onto the growth substrate (2); applying a mask layer (10) to partial regions of the semiconductor layer sequence (3) in order to produce masked regions (11) and unmasked regions (12); implanting ions through the unmasked regions (12) in order to produce implantation regions (13) in the semiconductor wafer (1); and dividing the semiconductor wafer (1) along the implantation regions (13), wherein the growth substrate (2) or at least one part of the growth substrate (2) is separated from the semiconductor wafer.

Abstract: A method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with respectively at least one semiconductor layer. The method involves providing a chip composite base having a substrate and a growth surface. A non-closed mask material layer is grown onto the growth surface in such a way that the mask material layer has a plurality of statistically distributed windows having varying forms and/or opening areas, a mask material being chosen in such a way that a semiconductor material of the semiconductor layer that is to be grown in a later method step essentially cannot grow on said mask material or can grow in a substantially worse manner in comparison with the growth surface. Subsequently, semiconductor layers are deposited essentially simultaneously onto regions of the growth surface that lie within the windows. A further method step is singulation of the chip composite base with applied material to form semiconductor chips.

Abstract: A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer. The semiconductor layer sequence is separated from the substrate by means of a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed in such a way that anisotropic residues of a constituent of the separation zone, in particular a metallic constituent of the separation layer, remain at the separation surface of the semiconductor layer sequence, from which the substrate is separated.