Abstract: A plasma etching method for plasma-etching an anti-reflective coating formed on a target object includes the step of placing the target object into a processing chamber having a first electrode and a second electrode provided while facing each other, the target object including an etching target film, the anti-reflective coating and a patterned photoresist film sequentially formed in that order on a substrate. The plasma etching method further includes the steps of introducing a processing gas into the processing chamber; generating a plasma by applying a high frequency power to one of the first electrode and the second electrode; and applying a DC voltage to one of the first electrode and the second electrode.

Abstract: A plasma etching method for plasma-etching an anti-reflective coating formed on a target object includes the step of placing the target object into a processing chamber having a first electrode and a second electrode provided while facing each other, the target object including an etching target film, the anti-reflective coating and a patterned photoresist film sequentially formed in that order on a substrate. The plasma etching method further includes the steps of introducing a processing gas into the processing chamber; generating a plasma by applying a high frequency power to one of the first electrode and the second electrode; and applying a DC voltage to one of the first electrode and the second electrode.

Abstract: A processing gas constituted of CH2F2, O2 and Ar is introduced into a processing chamber 102 of a plasma processing apparatus 100. The flow rate ratio of the constituents of the processing gas is set at CH2F2/O2/Ar=20 sccm/10 sccm/100 sccm. The pressure inside the processing chamber 102 is set at 50 mTorr. 500 W high frequency power with its frequency set at 13.56 MHz is applied to a lower electrode. 108 on which a wafer W is placed. The processing gas is raised to plasma and thus, an SiNx layer 206 formed on a Cu layer 204 is etched. The exposed Cu layer 204 is hardly oxidized and C and F are not injected into it.

Abstract: In a method for plasma etching a wafer laminated with a target layer, a lower organic layer, an intermediate layer and an upper resist layer in that order from bottom, the method includes following steps: patterning the upper resist layer by exposure and development, plasma etching the intermediate layer by using the patterned upper resist layer as a mask, plasma etching the lower organic layer by using the intermediate layer as a mask, and plasma etching the target layer by using the lower organic layer as a mask. While the intermediate layer is etched, since reaction products are deposited on the sidewalls of the openings in the intermediate layer, the sidewalls of the openings in the intermediate layer are tapered. In addition, because the dimensions (bottom CD) of the openings in the intermediate layer are smaller than those of the upper resist layer, it is possible to form openings in the target layer smaller than those of the upper resist layer.

Abstract: In an etching method, multiple etchings are sequentially performed in a single processing vessel on a laminated film having a plurality of layers formed on a substrate to be processed, without unloading the substrate to be processed from the vessel. Between the etchings, a cleaning processing for removing deposits from the processing vessel by using a plasma of a cleaning gas is performed. The cleaning gas is O2 containing gas, and preferably, a gaseous mixture of O2 and N2 gas. Further, the cleaning processing is performed under conditions of 50˜200 mTorr in the processing vessel; 5˜15 mL/min of O2 flow rate; and 100˜400 mL/min of N2 flow rate. The method prevents etching characteristics from being affected due to a memory effect, while offering the advantages of an all-in-one etching.

Abstract: A processing gas constituted of CH2F2, O2 and Ar is introduced into a processing chamber 102 of a plasma processing apparatus 100. The flow rate ratio of the constituents of the processing gas is set at CH2F2/O2/Ar=20 sccm/10 sccm/100 sccm. The pressure inside the processing chamber 102 is set at 50 mTorr. 500 W high frequency power with its frequency set at 13.56 MHz is applied to a lower electrode. 108 on which a wafer W is placed. The processing gas is raised to plasma and thus, an SiNx layer 206 formed on a Cu layer 204 is etched. The exposed Cu layer 204 is hardly oxidized and C and F are not injected into it.

Abstract: A processing gas constituted of CH2F2, O2 and Ar is introduced into a processing chamber 102 of a plasma processing apparatus 100. The flow rate ratio of the constituents of the processing gas is set at CH2F2/O2/Ar=20 sccm/10 sccm/100 sccm. The pressure inside the processing chamber 102 is set at 50 mTorr. 500 W high frequency power with its frequency set at 13.56 Mz is applied to a lower electrode 108 on which a wafer W is placed. The processing gas is raised to plasma and thus, an SiNx layer 206 formed on a Cu layer 204 is etched. The exposed Cu layer 204 is hardly oxidized and C and F are not injected into it.