Abstract: A method for producing flat panels for TFT or plasma display applications includes forming a sputter source within a sputter coating chamber, the source having at least two electrically mutually isolated stationery bar-shaped target arrangements. A controlled magnet arrangement provided under each target with a time-varying magnetron field.

Abstract: A magnetron sputtering source and a method of use thereof on which the sputtering source has at least two toroidal magnetron electron taps each defining a maximum of a magnetic field strength component in a radial direction along a surface of the sputtering source. Thereby, from each one of a ring zone on a first smaller radius R1F and a second larger radius R2F, a plane of the workpiece in a holder facing the sputtering source has a corresponding distance d1 and d2. A value d assumes all possible values of d1 and d2. In particular, 0.8≦(R2F−R1F)/d≦3.0 and preferably 1.0≦(R2F−R1F)/d≦2.2 The arrangement defines a sputtering geometry with the process space with a defined dual concentric narrow plasma discharge with correspondingly defined concentrated plasma inclusion.

Abstract: For optimizing the yield of atomized-off material on a magnetron atomization source, a process space, on the source side, is predominantly walled by the atomization surface of the target body. The magnetron atomization source has a target body with a mirror-symmetrical, concavely constructed atomization surface with respect to at least one plane and a magnetic circuit arrangement operable to generate a magnetic field over the atomization surface. The magnetic circuit arrangement includes an anode arrangement, a receiving frame which extends around an edge of the target body and is electrically insulated with respect thereto. The receiving frame has a receiving opening for at least one workpiece to be coated. The magnetron source can be used to provide storage disks, such as CDs, with an atomization coating.

Abstract: A method of manufacturing an object in a vacuum treatment apparatus having a vacuum recipient for containing an atmosphere, includes the steps of supporting a substrate on a work piece carrier arrangement in the recipient and treating the substrate to manufacture the object in the vacuum recipient. The treating process includes generating electrical charge carriers in the atmosphere and in the recipient which are of the type that form electrically insulating material and providing at least two electroconductive surfaces in the recipient. Power, such as a DC signal, is supplied to at least one of the electroconductive surfaces so that at least one of the electroconductive surfaces receives the electrically insulating material for covering at least part of that electroconductive surface. This causes electrical isolation of that electroconductive surface which leads to arcing and damage to the object.

Abstract: A sputter source has at least two electrically mutually isolated stationar bar-shaped target arrangements mounted one alongside the other and separated by respective slits. Each of the target arrangements includes a respective electric pad so that each target arrangement may be operated electrically independently from the other target arrangement. Each target arrangement also has a controlled magnet arrangement for generating a time-varying magnetron field upon the respective target arrangement. The magnet arrangements may be controlled independently from each others. The source further has an anode arrangement with anodes alongside and between the target arrangements and/or along smaller sides of the target arrangements.

Abstract: A sputter source has at least two electrically mutually isolated stationar bar-shaped target arrangements mounted one alongside the other and separated by respective slits. Each of the target arrangements includes a respective electric pad so that each target arrangement may be operated electrically independently from the other target arrangement. Each target arrangement also has a controlled magnet arrangement for generating a time-varying magnetron field upon the respective target arrangement. The magnet arrangements may be controlled independently from each others. The source further has an anode arrangement with anodes alongside and between the target arrangements and/or along smaller sides of the target arrangements.

Abstract: Two mutually opposite sputtering surfaces of at least one target are self-enclosed such that a closed loop gap, and consequently a closed loop plasma discharge space, is formed. A gas flow is created between the sputtering surface and directed against workpieces. No gap ends exist on the closed loop gap so that electrons that move along and within the plasma loop can recirculate until most of their energy has been transferred through impacts to the gas particles.

Abstract: A method for producing flat panels for TFT or plasma display applications includes forming a sputter source within a sputter coating chamber, the source having at least two electrically mutually isolated stationery bar-shaped target arrangements. A controlled magnet arrangement provided under each target with a time-varying magnetron field.

Abstract: A method of manufacturing an object in a vacuum treatment apparatus having a vacuum recipient for containing an atmosphere, includes the steps of supporting a substrate on a work piece carrier arrangement in the recipient and treating the substrate to manufacture the object in the vacuum recipient. The treating process includes generating electrical charge carriers in the atmosphere and in the recipient which are of the type that form electrically insulating material and providing at least two electroconductive surfaces in the recipient. Power, such as a DC signal, is supplied to at least one of the electroconductive surfaces so that at least one of the electroconductive surfaces receives the electrically insulating material for covering at least part of that electroconductive surface. This causes electrical isolation of that electroconductive surface which leads to arcing and damage to the object.

Abstract: A vacuum treatment apparatus (FIG. 13) includes a vacuum recipient or chamber (3) for containing an atmosphere. A mechanism (50,52) for generating electrical charge carriers in the atmosphere is provided in the recipient, the electrical charge carriers being of the type that form electrically isolating material. The recipient also contains a work piece carrier arrangement (1) and at least two electroconductive surfaces (2a, 2b) which are mutually electrically isolated from each other. A DC power supply (8) is operationally connected to the electroconductive surfaces by respective electrical conductors with an inductor (L.sub.66) in one of the conductors. A parallel switching arrangement is connected between the electrical conductors to control a current path between the conductors.

Abstract: A sputter source has at least two electrically mutually isolated stationary bar-shaped target arrangements mounted one alongside the other and separated by respective slits. Each of the target arrangements includes a respective electric pad so that each target arrangement may be operated electrically independently from the other target arrangement. Each target arrangement also has a controlled magnet arrangement for generating a time-varying magnetron field upon the respective target arrangement. The magnet arrangements may be controlled independently from each other. The source further has an anode arrangement with anodes alongside and between the target arrangements and/or along smaller sides of the target arrangements.

Abstract: A target arrangement for a sputtering apparatus has a circular plate target with either a circumferential protrusion or recess which is symmetrical about a central plane through the target, the plane being perpendicular to the central axis of the target and located halfway between the top and bottom surfaces of the target. Each surface of the target is composed primarily of sputtering material. A magnetron for use with the target arrangement for easy changing of the target to sputter using the opposite surface of the target is disclosed. A process for using the target arrangement and magnetron assembly to sputter a work piece is also disclosed.

Abstract: A magnetron sputtering source and a method of use thereof on which the sputtering source has at least two toroidal magnetron electron taps each defining a maximum of a magnetic field strength component in a radial direction along a surface of the sputtering source. Thereby, from each one of a ring zone on a first smaller radius R.sub.1F and a second larger radius R.sub.2F, a plane of the workpiece in a holder facing the sputtering source has a corresponding distance d.sub.1 and d.sub.2. A value d assumes all possible values of d1 and d2. In particular,0.8.ltoreq.(R.sub.2F -R.sub.1F)/d.ltoreq.3.0and preferably1.0.ltoreq.(R.sub.2F -R.sub.1F)/d.ltoreq.2.2.The arrangement defines a sputtering geometry with the process space essentially at very short target-to-substrate distance and with a defined dual concentric narrow plasma discharge with correspondingly defined concentrated plasma inclusion, whereby the substrate damage is reduced and high process economies are achieved.

Abstract: A vacuum treatment apparatus eliminate arcing in a vacuum recipient for containing an atmosphere and having a mechanism for generating electrical charge carriers in the atmosphere. A workpiece carrier arrangement and at least two electro-conductive surfaces are in the recipient and a generator unit having an output is connected to the electro-conductive surfaces. The generator includes a DC generator with an output, and a controlled adjusting unit with an input connected to the output of the DC generator. The controlled adjusting unit generates a first output signal in dependency on an output signal of the DC generator during first timespans, and a second output signal during second timespans. The unit may also have a time-controlled discharge or charge current loop connected from one of the electro-conductive surfaces to the other, with a higher ohmic resistance during the first timespans and a lower ohmic resistance during the second timespans.

Abstract: A sputter source and a corresponding target and holding device are provided in which the target is held by form locking arrangements. The target is pushed in an x-direction in the manner of a sliding drawer and is fixed by a releasable lock. A foil, which defines a cooling system on the holding device side, braces the fixed target when the cooling system is acted upon by pressure.

Abstract: A sputter coating station has a pair of opposing sputter sources. At least one of the sources encompasses a clear opening through which a workpiece mounting arrangement holding a workpiece can move for positioning the workpiece through the opening. A process for sputter coating workpieces uses the sputter coating station and includes holding the workpiece by a workpiece holder through the opening and into the coating chamber, and coating the workpiece using the sputtering sources.

Abstract: A vacuum treatment chamber has a sputtering electrode and a counter electrode together defining a plasma discharge area. The counter electrode has an electrode surface area which is not visible from the sputtering electrode. A third electrode, together with the non-visible surface area, defines an auxiliary plasma discharge space. A substantially unencumbered propagative electron path is established between the discharge spaces. A plasma discharge is generated between the sputtering electrode and the counter electrode within a vacuum chamber.

Abstract: For optimizing the yield of atomized-off material on a magnetron atomization source, a process space, on the source side, is predominantly walled by the atomization surface of the target body. The magnetron atomization source has a target body with a mirror-symmetrical, concavely constructed atomization surface with respect to at least one plane and a magnetic circuit arrangement operable to generate a magnetic field over the atomization surface. The magnetic circuit arrangement includes an anode arrangement, a receiving frame which extends around an edge of the target body and is electrically insulated with respect thereto. The receiving frame has a receiving opening for at least one workpiece to be coated. The magnetron source can be used to provide storage disks, such as CDs, with an atomization coating.

Abstract: A magnetic field enhanced sputtering arrangement and vacuum treatment apparatus includes an arrangement housing, on whose front face is mountable a target arrangement. A magnet carrier arrangement is rotatably supported about an axis in the arrangement housing. Magnetic flux of the magnet carrier penetrates through a region of the mounted target arrangement and the region is shifted through a relative rotational motion. An electric motor drive with a drive housing is connected to the arrangement housing so as to be torsion-tight therewith, and a rotor is rotatably supported in the drive housing, which, in turn, acts upon the magnet carrier arrangement. The drive housing forms the arrangement housing and the rotor is connected to the magnet carrier arrangement so as to be non-rotatable therewith, for a compact construction.

Abstract: The rear surface of an sputtering target (1) is actively cooled exclusively in regions spaced from breakthrough-prone regions. The cooling takes place in regions along the erosion profile outside of the regions of greatest erosion rate. For this purpose a cooling device for the target (1) has channels (7) through which a coolant flows. These channels (7) extend outside the regions (4) of strongest erosion of the target (1). The cooling channels (7) have on the side facing the back surface of the target, one foil-like closure wall (10). The cooling channels (7) extend in a cooling plate (6) and are separated from each other by webs (8). The webs (8) extend in the region of strongest erosion (4) of the target (1) in order to mechanically support these regions (4). Therewith it is possible to utilize expensive target material to the limit of its removal, without however risking a breakthrough of the target due to the erosion in an area where coolant will leak.