Patents by Inventor Walter Hartner

Walter Hartner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240030092
    Abstract: A device includes a radio frequency chip and a heat sink arranged over the radio frequency chip. The device further includes a layer stack arranged between the radio frequency chip and the heat sink. The layer stack includes a first layer including a first material, a thermal interface material, and a metal layer arranged between the first material and the thermal interface material.
    Type: Application
    Filed: July 12, 2023
    Publication date: January 25, 2024
    Inventors: Tuncay ERDOEL, Walter HARTNER, Pietro BRENNER, Simon KORNPROBST, Martin MAYER
  • Patent number: 11879966
    Abstract: A semiconductor package having an antenna; and a semiconductor die which is coupled to the antenna and comprises a transmitter configured to transmit wirelessly via the antenna a wireless signal having information on a local oscillator signal to a further semiconductor package comprising a further semiconductor die.
    Type: Grant
    Filed: January 5, 2021
    Date of Patent: January 23, 2024
    Assignee: Infineon Technologies AG
    Inventors: Josef Boeck, Rudolf Lachner, Maciej Wojnowski, Walter Hartner
  • Patent number: 11824019
    Abstract: A chip package includes a chip configured to generate and/or receive a signal; a laminate substrate including a substrate integrated waveguide (SIW) for carrying the signal, the substrate integrated waveguide including a chip-to-SIW transition structure configured to couple the signal between the SIW and the chip and a SIW-to-waveguide transition structure configured to couple the signal out of the SIW or into the SIW, wherein the SIW-to-waveguide transition structure includes a waveguide aperture; and a plurality of electrical interfaces arranged about a periphery of the waveguide aperture, the plurality of electrical interfaces configured to receive the signal from the SIW-to-waveguide transition structure and output the signal from the chip package or to couple the signal to the SIW-to-waveguide transition structure and into the chip package.
    Type: Grant
    Filed: June 24, 2021
    Date of Patent: November 21, 2023
    Assignee: Infineon Technologies AG
    Inventors: Tuncay Erdoel, Walter Hartner, Ulrich Moeller, Bernhard Rieder, Ernst Seler, Maciej Wojnowski
  • Patent number: 11798874
    Abstract: A semiconductor device includes a semiconductor chip including an electrical contact arranged on a main surface of the semiconductor chip, an external connection element configured to provide a first electrical connection between the semiconductor device and a printed circuit board, and an electrical redistribution layer extending in a direction parallel to the main surface of the semiconductor chip and configured to provide a second electrical connection between the electrical contact of the semiconductor chip and the external connection element. The electrical redistribution layer includes a ground line connected to a ground potential and a signal line configured to carry an electrical signal having a wavelength.
    Type: Grant
    Filed: November 29, 2021
    Date of Patent: October 24, 2023
    Assignee: Infineon Technologies AG
    Inventors: Walter Hartner, Francesca Arcioni, Tuncay Erdoel, Vincenzo Fiore, Helmut Kollmann, Arif Roni, Emanuele Stavagna, Christoph Wagner
  • Patent number: 11791529
    Abstract: A radio-frequency device comprises a printed circuit board and a radio-frequency package, which is mounted on the printed circuit board at a first mounting point and has a radio-frequency chip and a radio-frequency radiation element, wherein the printed circuit board has a first elasticity at least in a first section comprising the first mounting point. The radio-frequency device further comprises a waveguide component, which is mounted on the printed circuit board at a second mounting point and has a waveguide, wherein the radio-frequency radiation element is configured to radiate signals into the waveguide and/or to receive signals by way of the waveguide. The printed circuit board has a second elasticity at least in a second section with an increased elasticity between the first mounting point and the second mounting point, wherein the second elasticity is higher than the first elasticity.
    Type: Grant
    Filed: August 11, 2021
    Date of Patent: October 17, 2023
    Assignee: Infineon Technologies AG
    Inventors: Walter Hartner, Bernhard Rieder
  • Patent number: 11764453
    Abstract: A radio-frequency device comprises an encapsulation material and a radio-frequency chip embedded into the encapsulation material, wherein the radio-frequency chip has a first main surface and a second main surface. The radio-frequency device furthermore comprises an electrical redistribution layer arranged over the first main surface of the radio-frequency chip and the encapsulation material, and a radio-frequency antenna formed in the redistribution layer and configured to emit signals in a direction pointing from the second main surface to the first main surface and/or to receive signals in a direction pointing from the first main surface to the second main surface. The radio-frequency device furthermore comprises a microwave component having an electrically conductive wall structure, the microwave component being arranged below the radio-frequency antenna and embedded into the encapsulation material.
    Type: Grant
    Filed: May 4, 2021
    Date of Patent: September 19, 2023
    Assignee: Infineon Technologies AG
    Inventors: Walter Hartner, Bernhard Rieder
  • Publication number: 20220415830
    Abstract: A chip package includes a chip configured to generate and/or receive a signal; a laminate substrate including a substrate integrated waveguide (SIW) for carrying the signal, the substrate integrated waveguide including a chip-to-SIW transition structure configured to couple the signal between the SIW and the chip and a SIW-to-waveguide transition structure configured to couple the signal out of the SIW or into the SIW, wherein the SIW-to-waveguide transition structure includes a waveguide aperture; and a plurality of electrical interfaces arranged about a periphery of the waveguide aperture, the plurality of electrical interfaces configured to receive the signal from the SIW-to-waveguide transition structure and output the signal from the chip package or to couple the signal to the SIW-to-waveguide transition structure and into the chip package.
    Type: Application
    Filed: June 24, 2021
    Publication date: December 29, 2022
    Applicant: Infineon Technologies AG
    Inventors: Tuncay ERDOEL, Walter HARTNER, Ulrich MOELLER, Bernhard RIEDER, Ernst SELER, Maciej WOJNOWSKI
  • Publication number: 20220247089
    Abstract: A radio-frequency device comprises a printed circuit board and a radio-frequency package having a radio-frequency chip and a radio-frequency radiation element, the radio-frequency package being mounted on the printed circuit board. The radio-frequency device furthermore comprises a waveguide component having a waveguide, wherein the radio-frequency radiation element is configured to radiate transmission signals into the waveguide and/or to receive reception signals via the waveguide.
    Type: Application
    Filed: January 24, 2022
    Publication date: August 4, 2022
    Inventors: Walter HARTNER, Tuncay ERDOEL, Klaus ELIAN, Christian GEISSLER, Bernhard RIEDER, Rainer Markus SCHALLER, Horst THEUSS, Maciej WOJNOWSKI
  • Patent number: 11387533
    Abstract: A semiconductor device including an Integrated Circuit (IC) package and a plastic waveguide. The IC package includes a semiconductor chip; and an embedded antenna formed within a Redistribution Layer (RDL) coupled to the semiconductor chip, wherein the RDL is configured to transport a Radio Frequency (RF) signal between the semiconductor chip and the embedded antenna. The plastic waveguide is attached to the IC package and configured to transport the RF signal between the embedded antenna and outside of the IC package.
    Type: Grant
    Filed: July 11, 2018
    Date of Patent: July 12, 2022
    Assignee: Infineon Technologies AG
    Inventors: Maciej Wojnowski, Dirk Hammerschmidt, Walter Hartner, Johannes Lodermeyer, Chiara Mariotti, Thorsten Meyer
  • Publication number: 20220199481
    Abstract: A circuit arrangement has a chip arrangement in the form of an embedded Wafer Level Ball Grid Array (eWLB) arrangement with solder contacts on one side and a thermal interface on a side of the chip arrangement facing away from the solder contacts which is designed to dissipate heat from the semiconductor chip. In examples, the thermal interface has a thermally and electrically conductive material, wherein in a top view of the chip arrangement, a contact area in which the thermally and electrically conductive material is in thermal contact with the chip arrangement is limited to the fan-out area. In examples, the thermal interface has at least one RF absorption layer which is designed to absorb electromagnetic radiation at an operating frequency of the semiconductor chip.
    Type: Application
    Filed: December 6, 2021
    Publication date: June 23, 2022
    Applicant: Infineon Technologies AG
    Inventors: Raphael HELLWIG, Philip AMOS, Walter HARTNER
  • Publication number: 20220189892
    Abstract: A device includes a high frequency chip and a dielectric material arranged between a first area radiating an electromagnetic interference signal in a first frequency range between 1 GHz and 1 THz and a second area receiving the electromagnetic interference signal. An attenuation of the dielectric material is more than 5 dB/cm at least in a subrange of the first frequency range.
    Type: Application
    Filed: November 9, 2021
    Publication date: June 16, 2022
    Inventors: Pietro BRENNER, Walter HARTNER, Julian Winfried KAISER, Saqib KALEEM
  • Publication number: 20220181246
    Abstract: A semiconductor device includes a semiconductor chip including an electrical contact arranged on a main surface of the semiconductor chip, an external connection element configured to provide a first electrical connection between the semiconductor device and a printed circuit board, and an electrical redistribution layer extending in a direction parallel to the main surface of the semiconductor chip and configured to provide a second electrical connection between the electrical contact of the semiconductor chip and the external connection element. The electrical redistribution layer includes a ground line connected to a ground potential and a signal line configured to carry an electrical signal having a wavelength.
    Type: Application
    Filed: November 29, 2021
    Publication date: June 9, 2022
    Inventors: Walter HARTNER, Francesca ARCIONI, Tuncay ERDOEL, Vincenzo FIORE, Helmut KOLLMANN, Arif RONI, Emanuele STAVAGNA, Christoph WAGNER
  • Publication number: 20220059918
    Abstract: A radio-frequency device comprises a printed circuit board and a radio-frequency package, which is mounted on the printed circuit board at a first mounting point and has a radio-frequency chip and a radio-frequency radiation element, wherein the printed circuit board has a first elasticity at least in a first section comprising the first mounting point. The radio-frequency device further comprises a waveguide component, which is mounted on the printed circuit board at a second mounting point and has a waveguide, wherein the radio-frequency radiation element is configured to radiate signals into the waveguide and/or to receive signals by way of the waveguide. The printed circuit board has a second elasticity at least in a second section with an increased elasticity between the first mounting point and the second mounting point, wherein the second elasticity is higher than the first elasticity.
    Type: Application
    Filed: August 11, 2021
    Publication date: February 24, 2022
    Inventors: Walter HARTNER, Bernhard RIEDER
  • Patent number: 11251146
    Abstract: A semiconductor device comprises a semiconductor chip having a radio-frequency circuit and a radio-frequency terminal, an external radio-frequency terminal, and a non-galvanic connection arranged between the radio-frequency terminal of the semiconductor chip and the external radio-frequency terminal, wherein the non-galvanic connection is designed to transmit a radio-frequency signal.
    Type: Grant
    Filed: April 6, 2020
    Date of Patent: February 15, 2022
    Assignee: Infineon Technologies AG
    Inventors: Walter Hartner, Francesca Arcioni, Birgit Hebler, Martin Richard Niessner, Claus Waechter, Maciej Wojnowski
  • Publication number: 20210359387
    Abstract: A radio-frequency device comprises an encapsulation material and a radio-frequency chip embedded into the encapsulation material, wherein the radio-frequency chip has a first main surface and a second main surface. The radio-frequency device furthermore comprises an electrical redistribution layer arranged over the first main surface of the radio-frequency chip and the encapsulation material, and a radio-frequency antenna formed in the redistribution layer and configured to emit signals in a direction pointing from the second main surface to the first main surface and/or to receive signals in a direction pointing from the first main surface to the second main surface. The radio-frequency device furthermore comprises a microwave component having an electrically conductive wall structure, the microwave component being arranged below the radio-frequency antenna and embedded into the encapsulation material.
    Type: Application
    Filed: May 4, 2021
    Publication date: November 18, 2021
    Inventors: Walter Hartner, Bernhard Rieder
  • Patent number: 11145563
    Abstract: A method comprises providing a least one semiconductor component, wherein each of the at least one semiconductor component comprises: a semiconductor chip, wherein the semiconductor chip comprises a first main surface and a second main surface opposite the first main surface, and a sacrificial layer arranged above the opposite second main surface of the semiconductor chip. The method further comprises encapsulating the at least one semiconductor component with an encapsulation material. The method further comprises removing the sacrificial material, wherein above each of the at least one semiconductor chip a cutout is formed in the encapsulation material. The method further comprises arranging at least one lid above the at least one cutout, wherein a closed cavity is formed by the at least one cutout and the at least one lid above each of the at least one semiconductor chip.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: October 12, 2021
    Assignee: Infineon Technologies AG
    Inventors: Christian Geissler, Walter Hartner, Claus Waechter, Maciej Wojnowski
  • Publication number: 20210247510
    Abstract: A semiconductor package having an antenna; and a semiconductor die which is coupled to the antenna and comprises a transmitter configured to transmit wirelessly via the antenna a wireless signal having information on a local oscillator signal to a further semiconductor package comprising a further semiconductor die.
    Type: Application
    Filed: January 5, 2021
    Publication date: August 12, 2021
    Inventors: Josef Boeck, Rudolf Lachner, Maciej Wojnowski, Walter Hartner
  • Patent number: 10916484
    Abstract: An electronic device is disclosed. In one example, the electronic device includes a solder ball, a dielectric layer comprising an opening, and a redistribution layer (RDL) comprising an RDL pad connected with the solder ball. The RDL pad including at least one void, the void being disposed at least in partial in an area of the RDL pad laterally outside of the opening of the dielectric layer.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: February 9, 2021
    Assignee: Infineon Technologies AG
    Inventors: Robert Fehler, Francesca Arcioni, Christian Geissler, Walter Hartner, Gerhard Haubner, Thorsten Meyer, Martin Richard Niessner, Maciej Wojnowski
  • Publication number: 20200321295
    Abstract: A semiconductor device comprises a semiconductor chip having a radio-frequency circuit and a radio-frequency terminal, an external radio-frequency terminal, and a non-galvanic connection arranged between the radio-frequency terminal of the semiconductor chip and the external radio-frequency terminal, wherein the non-galvanic connection is designed to transmit a radio-frequency signal.
    Type: Application
    Filed: April 6, 2020
    Publication date: October 8, 2020
    Inventors: Walter HARTNER, Francesca ARCIONI, Birgit HEBLER, Martin Richard NIESSNER, Claus WAECHTER, Maciej WOJNOWSKI
  • Patent number: 10607911
    Abstract: A chip carrier for carrying an encapsulated electronic chip, wherein the chip carrier comprises a laminate structure formed as a stack of a plurality of electrically insulating structures and a plurality of electrically conductive structures, and a chip coupling area at an exposed surface of the laminate structure being configured for electrically and mechanically coupling the encapsulated electronic chip, wherein one of the electrically insulating structures is configured as high frequency dielectric made of a material being compatible with low-loss transmission of a high-frequency signal, and wherein at least one of another one of the electrically insulating structures and one of the electrically conductive structures is configured as a thermomechanical buffer for buffering thermally induced mechanical load.
    Type: Grant
    Filed: January 18, 2016
    Date of Patent: March 31, 2020
    Assignee: Infineon Technologies AG
    Inventors: Martin Richard Niessner, Walter Hartner, Gerhard Haubner, Sebastian Pahlke