Abstract: In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.

Abstract: Improved methods for forming gate isolation structures between portions of gate electrodes and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a channel structure over a substrate; forming a first isolation structure extending in a direction parallel to the channel structure; forming a dummy gate structure over the channel structure and the first isolation structure; depositing a hard mask layer over the dummy gate structure; etching the hard mask layer to form a first opening through the hard mask layer over the first isolation structure; conformally depositing a first dielectric layer over the hard mask layer, in the first opening, and over the dummy gate structure; etching the first dielectric layer to extend the first opening and expose the dummy gate structure; and etching the dummy gate structure to extend the first opening and expose the first isolation structure.

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain (S/D) region and a contact. The S/D region is located in the substrate and on a side of the gate structure. The contact lands on and connected to the S/D region. The contact wraps around the S/D region.

Abstract: A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain (S/D) region and a contact. The S/D region is located in the substrate and on a side of the gate structure. The contact lands on and connected to the S/D region. The contact wraps around the S/D region.

Abstract: A method includes forming a first protruding fin and a second protruding fin over a base structure, with a trench located between the first protruding fin and the second protruding fin, depositing a trench-filling material extending into the trench, and performing a laser reflow process on the trench-filling material. In the reflow process, the trench-filling material has a temperature higher than a first melting point of the trench-filling material, and lower than a second melting point of the first protruding fin and the second protruding fin. After the laser reflow process, the trench-filling material is solidified. The method further includes patterning the trench-filling material, with a remaining portion of the trench-filling material forming a part of a gate stack, and forming a source/drain region on a side of the gate stack.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain (S/D) region and a contact. The S/D region is located in the substrate and on a side of the gate structure. The contact lands on and connected to the S/D region. The contact wraps around the S/D region.

Abstract: An interactive exercise apparatus structure comprised of a base, an inclined support structure at the upper extent of the base, and a transport pulley assembly installed above the base. The support structure consists of an arrangement in which one end is on the floor and the other end is angularly positioned on the base. The pull cord is on the floor and the other end is angularly positioned on the base. The pull cord of the transport pulley assembly is respectively wrapped around a first pulley at the lateral end of the upper horizontal bar and positioned onto a second pulley at the bottom end of the reclined body rest buttress rod, following which it is wrapped around a third pulley at the other end of the upper horizontal bar, the two free ends of the pull cord then providing the user extremities for exerting a tugging force.

Abstract: An interactive exercise apparatus structure comprised of a base, an inclined support structure at the upper extent of the base, and a transport pulley assembly installed above the base. The support structure consists of an arrangement in which one end is on the floor and the other end is angularly positioned on the base. The pull cord of the transport pulley assembly is respectively wrapped around a first pulley at the lateral end of the upper horizontal bar and positioned onto a second pulley at the bottom end of the reclined body rest buttress rod, following which it is wrapped around a third pulley at the other end of the upper horizontal bar, the two free ends of the pull cord then providing the user extremities for exerting a tugging force. The user sits on the reclined body rest with both hands applying an equal force on the pull cord causing the reclined body rest to slide reciprocally on the frame, thereby moving the exerciser seated on the reclined body rest back and forth.

Abstract: The present invention relates to a body weight driven treadmill, and when the exerciser steps on the treadmill, the exerciser's body weight acts as a loading to tilt the pedal platform upward from the rear back of the treadmill, since the base of the treadmill has a front supporting rod and a rear supporting rod, wherein the radius of the front supporting rod is slightly smaller than that of the rear supporting rod, and the points of contact tangential to the ground are different. Such arrangement can slightly tilt the exerciser's body forward, until it reaches equilibrium and a stable position. When the treadmill is stepped by our legs alternately, the pressing foot will tilt forward, and twist the exerciser's waist. Such body weight driven treadmill is a simple and easy-to-assemble structure and does not occupy much space.