Abstract: A semiconductor device includes: a first electrode; a second electrode; and a dielectric layer stack positioned between the first electrode and the second electrode, the dielectric layer stack including a first anti-ferroelectric layer, a second anti-ferroelectric layer, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric.

Abstract: The present invention relates to a semiconductor device having a capacitor and a method for fabricating the same. A semiconductor device may comprise: a lower electrode; a supporter supporting an outer wall of the lower electrode; a dielectric layer formed over the lower electrode and the supporter; an upper electrode formed on the dielectric layer; and a dielectric booster layer disposed between the lower electrode and the dielectric layer, and selectively formed on a surface of the lower electrode.

Abstract: Embodiments of the present invention provide a semiconductor device capable of improving current leakage property and a method for fabricating the same. According to an embodiment of the present invention, a capacitor comprises: a lower electrode; a dielectric layer over the lower electrode; and an upper electrode over the dielectric layer, the upper electrode including a conductive carbon-containing layer, wherein a carbon content in the conductive carbon-containing layer is more than 5 at % and equal to or less than 10 at %.

Abstract: A semiconductor device includes: a first electrode; a second electrode; and a dielectric layer stack positioned between the first electrode and the second electrode, the dielectric layer stack including a first anti-ferroelectric layer, a second anti-ferroelectric layer, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric.

Abstract: A semiconductor device includes: a first electrode; a second electrode; and a dielectric layer stack positioned between the first electrode and the second electrode, the dielectric layer stack including a first anti-ferroelectric layer, a second anti-ferroelectric layer, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric.

Abstract: An optical apparatus includes a touch substrate; a waveguide layer arranged on the touch substrate, the waveguide layer including a plurality of waveguides; an optical output structure arranged on the waveguide layer and configured to output light propagating in the plurality of waveguides at touched locations on the touch substrate; a gap layer arranged to provide a predetermined gap between the waveguide layer and the optical output structure; and an optical system, which projects light output by the optical output structure.

Abstract: Provided is an acousto-optic device including an elastic medium; a meta structure formed on a first surface of the elastic medium, and an elastic-wave generating unit which generates an elastic wave in the elastic medium. The meta structure includes a first layer and a second layer that is formed on the first layer. The at least one of the first layer and the second layer includes a predetermined repetitive pattern.

Abstract: An optical apparatus includes a touch substrate; a waveguide layer arranged on the touch substrate, the waveguide layer including a plurality of waveguides; an optical output structure arranged on the waveguide layer and configured to output light propagating in the plurality of waveguides at touched locations on the touch substrate; a gap layer arranged to provide a predetermined gap between the waveguide layer and the optical output structure; and an optical system, which projects light output by the optical output structure.

Abstract: An optical apparatus includes a touch substrate; a waveguide layer arranged on the touch substrate, the waveguide layer including a plurality of waveguides; an optical output structure arranged on the waveguide layer and configured to output light propagating in the plurality of waveguides at touched locations on the touch substrate; a gap layer arranged to provide a predetermined gap between the waveguide layer and the optical output structure; and an optical system, which projects light output by the optical output structure.

Abstract: An acousto-optic device having a wide range of diffraction angle and an optical scanner, a light modulator, and a display apparatus using the acousto-optic device are provided. The acousto-optic device includes a core layer having a periodic photonic crystal structure in which unit cells of predetermined patterns are repeated, a first clad layer on a first surface of the core layer, the first clad layer having a refractive index that is different from a refractive index of the core layer, a second clad layer on a second surface of the core layer, the second surface being opposite the first surface, the second clad layer having a refractive index that is different from the refractive index of the core layer, and a sound wave generator configured to apply surface acoustic waves (SAW) to the core layer, the first clad layer, the second clad layer, or any combination thereof.

Abstract: A plasmonic modulator and an optical apparatus including the same are provided. The plasmonic modulator includes a first metal layer, and a second metal layer facing the first metal layer. The plasmonic modulator further includes a refractive index varying layer disposed between the first and second metal layers and including a varying refractive index, and an insulating nitride layer disposed between the refractive index varying layer and the first metal layer.

Abstract: An acousto-optic device includes an optical waveguide in which incident light is able to propagate; a metal layer surrounding at least a first portion of the optical waveguide; a gain medium layer disposed in the first portion of the optical waveguide; and a sonic wave generator configured to generate surface acoustic waves (SAWs) and apply the SAWs to the optical waveguide and/or the metal layer.

Abstract: An acousto-optic device having a wide range of diffraction angle and an optical scanner, a light modulator, and a display apparatus using the acousto-optic device are provided. The acousto-optic device includes a core layer having a periodic photonic crystal structure in which unit cells of predetermined patterns are repeated, a first clad layer on a first surface of the core layer, the first clad layer having a refractive index that is different from a refractive index of the core layer, a second clad layer on a second surface of the core layer, the second surface being opposite the first surface, the second clad layer having a refractive index that is different from the refractive index of the core layer, and a sound wave generator configured to apply surface acoustic waves (SAW) to the core layer, the first clad layer, the second clad layer, or any combination thereof.

Abstract: An acousto-optic device having a wide range of diffraction angle and an optical scanner, a light modulator, and a display apparatus using the acousto-optic device are provided. The acousto-optic device includes a core layer having a periodic photonic crystal structure in which unit cells of predetermined patterns are repeated, a first clad layer on a first surface of the core layer, the first clad layer having a refractive index that is different from a refractive index of the core layer, a second clad layer on a second surface of the core layer, the second surface being opposite the first surface, the second clad layer having a refractive index that is different from the refractive index of the core layer, and a sound wave generator configured to apply surface acoustic waves (SAW) to the core layer, the first clad layer, the second clad layer, or any combination thereof.

Abstract: An oxide transistor includes: a channel layer formed of an oxide semiconductor; a source electrode contacting a first end portion of the channel layer; a drain electrode contacting a second end portion of the channel layer; a gate corresponding to the channel layer; and a gate insulating layer disposed between the channel layer and the gate. The oxide semiconductor includes hafnium-indium-zinc-oxide (HfInZnO). An electrical conductivity of a back channel region of the channel layer is lower than an electrical conductivity of a front channel region of the channel layer.

Abstract: An acousto-optic device includes an acousto-optic medium having a multi-layer nanostructure; and a sonic wave generator configured to apply sonic waves to the acousto-optic medium having the multi-layer nanostructure. The acousto-optic medium having the multi-layer nanostructure includes a second layer formed of at least two materials that have different dielectric constants and alternate with each other; and a first layer disposed on a first surface of the second layer and formed of a first material, and/or a third layer disposed on a second surface of the second layer and formed of a fourth material.

Abstract: An optical apparatus includes a touch substrate; a waveguide layer arranged on the touch substrate, the waveguide layer including a plurality of waveguides; an optical output structure arranged on the waveguide layer and configured to output light propagating in the plurality of waveguides at touched locations on the touch substrate; a gap layer arranged to provide a predetermined gap between the waveguide layer and the optical output structure; and an optical system, which projects light output by the optical output structure.

Abstract: Provided is an acousto-optic device including an elastic medium; a meta structure formed on a first surface of the elastic medium, and an elastic-wave generating unit which generates an elastic wave in the elastic medium. The meta structure includes a first layer and a second layer that is formed on the first layer. The at least one of the first layer and the second layer includes a predetermined repetitive pattern.

Abstract: An acousto-optic device having a wide range of diffraction angle and an optical scanner, a light modulator, and a display apparatus using the acousto-optic device are provided. The acousto-optic device includes a core layer having a periodic photonic crystal structure in which unit cells of predetermined patterns are repeated, a first clad layer on a first surface of the core layer, the first clad layer having a refractive index that is different from a refractive index of the core layer, a second clad layer on a second surface of the core layer, the second surface being opposite the first surface, the second clad layer having a refractive index that is different from the refractive index of the core layer, and a sound wave generator configured to apply surface acoustic waves (SAW) to the core layer, the first clad layer, the second clad layer, or any combination thereof.

Abstract: An acousto-optic device includes an optical waveguide in which incident light is able to propagate; a metal layer surrounding at least a first portion of the optical waveguide; a gain medium layer disposed in the first portion of the optical waveguide; and a sonic wave generator configured to generate surface acoustic waves (SAWs) and apply the SAWs to the optical waveguide and/or the metal layer.