Abstract: An acousto-optic device includes an acousto-optic medium having a multi-layer nanostructure; and a sonic wave generator configured to apply sonic waves to the acousto-optic medium having the multi-layer nanostructure. The acousto-optic medium having the multi-layer nanostructure includes a second layer formed of at least two materials that have different dielectric constants and alternate with each other; and a first layer disposed on a first surface of the second layer and formed of a first material, and/or a third layer disposed on a second surface of the second layer and formed of a fourth material.

Abstract: A transistor includes a channel layer disposed above a gate and including an oxide semiconductor. A source electrode contacts a first end portion of the channel layer, and a drain electrode contacts a second end portion of the channel layer. The channel layer further includes a fluorine-containing region formed in an upper portion of the channel layer between the source electrode and the drain electrode.

Abstract: An oxide transistor includes: a channel layer formed of an oxide semiconductor; a source electrode contacting a first end portion of the channel layer; a drain electrode contacting a second end portion of the channel layer; a gate corresponding to the channel layer; and a gate insulating layer disposed between the channel layer and the gate. The oxide semiconductor includes hafnium-indium-zinc-oxide (HfInZnO). An electrical conductivity of a back channel region of the channel layer is lower than an electrical conductivity of a front channel region of the channel layer.

Abstract: Transistors, methods of manufacturing the transistors, and electronic devices including the transistors. The transistor may include an oxide channel layer having a multi-layer structure. The channel layer may include a first layer and a second layer that are sequentially arranged from a gate insulation layer. The first layer may be a conductor, and the second layer may be a semiconductor having a lower electrical conductivity than that of the first layer. The first layer may become a depletion region according to a gate voltage condition.