Abstract: Embodiments described herein relate to graded slope bottom reflective electrode layer structures for top-emitting organic light-emitting diode (OLED) display pixels. An EL device includes a pixel definition layer having a top surface, a bottom surface, and graded sidewalls interconnecting the top and bottom surfaces and a bottom reflective electrode layer disposed over the pixel definition layer. The bottom reflective electrode layer includes a planar electrode portion disposed over the bottom surface and a graded reflective portion disposed over the graded sidewalls, where the graded reflective portion has a concave profile. The EL device includes an organic layer disposed over the bottom reflective electrode layer and a top electrode disposed over the organic layer. Also described herein are methods for fabricating the EL device.

Abstract: A method for manufacturing an organic light-emitting diode (OLED) structure includes depositing a light extraction layer (LEL) over a stack of OLED layers by directing fluid droplets of a LEL precursor to an array of well structures separated by plateau areas. Each well structure includes a recess with sidewalls and a floor, and the plateau areas have rounded top surfaces such that the droplets of the LEL precursor are guided into recesses of the well structures. The droplets of the LEL precursor are cured to solidify the LEL in the recess.

Abstract: An organic light-emitting diode (OLED) structure includes a substrate, a dielectric layer on the substrate having an array of well structures with each well structure including a recess with side walls and a floor and the recesses are separated by plateaus having rounded top surfaces, a stack of OLED layers covering at least the floor of the well, and a light extraction layer (LEL) in the well over the stack of OLED layers.

Abstract: An organic light-emitting diode (OLED) device includes a substrate, a well structure on the substrate with the well structure having a recess with side walls and a floor, a lower metal layer covering the floor and side-walls of the well, an upper conductive layer on the lower metal layer covering the floor of the well and contacting the lower metal layer, the upper conductive layer having outer edges at about an intersection of the side walls and the floor, a dielectric layer formed of an oxide of the lower metal layer covering the side walls of the well without covering the upper conductive layer, a stack of OLED layers covering at least the floor of the well, the upper conductive layer providing an electrode for the stack of OLED layers, and a light extraction layer (LEL) in the well over the stack of OLED layers and the dielectric layer.

Abstract: An organic light-emitting diode (OLED) structure including a substrate; a dielectric layer on the substrate having an array of well structures, wherein each well structure includes a recess with side walls and a floor, and the well structures are separated by plateaus; a stack of OLED layers covering at least the floor of the well; a light extraction layer (LEL) in the well over the stack of OLED layers; and a coating covering a portion of the stack of OLED layers such that a top surface of the plateaus is more hydrophobic than a surface in the well on which the light extraction layer is formed.

Abstract: An organic light-emitting diode (OLED) structure includes a substrate, a dielectric layer on the substrate having an array of well structures with each well structure including a recess with side walls and a floor and the recesses are separated by plateaus having rounded top surfaces, a stack of OLED layers covering at least the floor of the well, and a light extraction layer (LEL) in the well over the stack of OLED layers.

Abstract: An organic light-emitting diode (OLED) structure includes a stack of OLED layers; a light extraction layer (LEL) comprising a UV-cured ink; and a UV blocking layer between the LEL and the stack of OLED layers.

Abstract: An organic light-emitting diode (OLED) structure includes a stack of OLED layers that includes a light emission zone having a planar portion, and a light extraction layer formed of a UV-cured ink disposed over the light emission zone of the stack of OLED layers. The light extraction layer has a gradient in index of refraction along an axis normal to the planar portion.

Abstract: Embodiments of the disclosure generally provide methods of forming a capacitor with high capacitance and low leakage as well as a good interface control for thin film transistor (TFT) applications. In one embodiment, a thin film transistor structure includes a capacitor formed in a thin film transistor device. The capacitor further includes a common electrode disposed on a substrate, a dielectric layer formed on the common electrode and a pixel electrode formed on the dielectric layer. An interface protection layer formed between the common electrode and the dielectric layer, or between the dielectric layer and the pixel electrode. A gate insulating layer fabricated by a high-k material may also be utilized in the thin film transistor structure.

Abstract: Embodiments of the disclosure generally provide methods of forming a capacitor with high capacitance and low leakage as well as a good interface control for thin film transistor (TFT) applications. In one embodiment, a thin film transistor structure includes a capacitor formed in a thin film transistor device. The capacitor further includes a common electrode disposed on a substrate, a dielectric layer formed on the common electrode and a pixel electrode formed on the dielectric layer. An interface protection layer formed between the common electrode and the dielectric layer, or between the dielectric layer and the pixel electrode. A gate insulating layer fabricated by a high-k material may also be utilized in the thin film transistor structure.