Abstract: Dimensional decomposition convolution systems and techniques are described. A system receives a tensor including a first number of dimensions. The system processes a variant of the tensor using a convolution function including a second number of dimensions to generate a processed tensor. The first number of dimensions is greater than the second number of dimensions. A plurality of dimensions from the first number of dimensions of the tensor are grouped into a dimension of the variant of the tensor to reduce dimensionality of the variant of the tensor to the second number of dimensions.

Abstract: A light-emitting device includes a light-emitting laminated structure, a first electrode, and a second electrode. The first electrode has a reflection layer, an intermediate layer, and an electrically conductive layer. The intermediate layer includes a barrier layer having a first repeating paired layer unit and a second repeating paired layer unit, each of which has a platinum layer. The first repeating paired layer unit is closer to the electrically conductive layer than the second repeating paired layer unit, and a thickness of the platinum layer of the first repeating paired layer unit is greater than a thickness of the platinum layer of the second repeating paired layer unit.

Abstract: There is provided peptidic compounds of Formula I, A or B(Rradn6-[linker]-RL-Xaa1-Xaa2-Xaa3-Xaa4-Xaa5-Xaa6-Xaa7-Xaa8-?-Xaa9-NH2). Xaa1 is D-Phe, Cpa, D-Cpa, Nal, D-Nal, 2-Nal, or D-2-Nal; Xaa2 is Asn, Gln, Hse, Cit or His. Xaa3 is Trp, Bta, Trp(Me), Trp(7-Me), Trp(6-Me), Trp(5-Me), Trp(4-Me), Trp(2-Me), Trp(7-F), Trp(6-F), Trp(5-F), Trp(4-F), Trp(5-OH), or ?Me-Trp. Xaa4 is Ala or Ser. Xaa5 is Val, Cpg, or Tle. Xaa6 is Gly, NMe-Gly, or D-Ala. Xaa7 is His or NMe-His. Xaa8 is Leu or Phe. Xaa9-NH2 is a C-terminally amidated amino acid residue selected from Pro, 4-oxa-L-Pro, Me2 Thz, or Thz. ? represents a peptide bond or reduced peptide bond joining Xaa8 to Xaa9. Rradn6 is 1-5 radiolabeling groups. There is also provided the use of such compounds as imaging agents or therapeutic agents.

Abstract: A method of inspecting flatness of substrate is provided and includes providing a substrate. N first inspecting points are selected from the surface of the substrate along a first straight line, where the coordinate of the i-th first inspecting point is (Xi,Yi,Zi). By using a formula “ D = ? i = 1 N - 1 ? ( X i + 1 - X i ) 2 + ( Y i + 1 - Y i ) 2 + ( Z i + 1 - Z i ) 2 ” , a first measurement length D is calculated. By using a formula “F=(D?S)/S”, a first flatness index F is calculated. S is the horizontal distance between 1st first inspecting point and N-th first inspecting point. When the first flatness index F is larger than a first threshold, the substrate is determined to be unqualified.

Abstract: A semiconductor packaging substrate comprises a crack-inhibiting dielectric frame and a plurality of interconnect units each including electrically conductive posts and an interfacial dielectric layer. These interconnect units are formed within separate compartments defined by the crack-inhibiting dielectric frame. The interfacial dielectric layer laterally covers and surrounds sidewalls of the electrically conductive posts. By using a crack-inhibiting dielectric frame instead of a conventional metal frame, structural warpage can be suppressed during the application of the interfacial dielectric layer.

Abstract: A system for providing contrast enhanced ultrasound (CEUS) images is described. The CEUS system includes an ultrasound probe adapted to provide the ultrasound images; a processor configured to determine out-of-plane frames of the ultrasound images, and remove the out-of-plane frames from the ultrasound images based on a criterion to provide an optimized set of frames; and a display in communication with the processor and configured to display the optimized set of frames.

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for distributing digital component while securing user data are described. In one aspect, a method includes receiving, by a multi-platform server and from a client device, a request for a digital component for presentation by the client device. The request for the digital component includes (i) request data that is opaque to the multi-platform server, and (ii) sensitive user data that is managed by the client device. In response to receiving the request for the digital component, the multi-platform server transmits, to a first content platform, a contextual request that includes the request data from the client device and that does not include the sensitive user data. After transmitting the contextual request, the multi-platform server receives, from the first content platform, a contextual response that includes a selection data unit for a first repository of digital components.

Abstract: A memory device is provided, including a memory array, a driver circuit, and recover circuit. The memory array includes multiple memory cells. Each memory cell is coupled to a control line, a data line, and a source line and, during a normal operation, is configured to receive first and second voltage signals. The driver circuit is configured to output at least one of the first voltage signal or the second voltage signal to the memory cells. The recover circuit is configured to output, during a recover operation, a third voltage signal, through the driver circuit to at least one of the memory cells. The third voltage signal is configured to have a first voltage level that is higher than a highest level of the first voltage signal or the second voltage signal, or lower than a lowest level of the first voltage signal or the second voltage signal.

Abstract: A semiconductor device including a capacitor, with a memory film isolating a first electrode from a contact, formed over a transistor and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a gate stack over a semiconductor substrate; a capacitor over the gate stack, the capacitor including a first electrode extending along a top surface of the gate stack, the first electrode being U-shaped; a first ferroelectric layer over the first electrode; and a second electrode over the first ferroelectric layer, a top surface of the second electrode being level with a top surface of the first ferroelectric layer, and the top surface of the first ferroelectric layer and the top surface of the second electrode being disposed further from the semiconductor substrate than a topmost surface of the first electrode.

Abstract: The present invention provides methods and compositions for treating a lung or heart disease and/or a disease associated with increased expression or activity of integrin ?5?1, comprising administering an integrin ?5?1, inhibitor to a subject. Methods of treating or preventing pulmonary hypertension, pulmonary arterial hypertension (PAH), right ventricle failure, heart failure and fibrosis are also provided herein.

Abstract: Encoding using media compression and processing for machine-learning-based quality metrics includes generating encoded frame data by encoding a current frame from an input video using a neural-network-based video quality model, which includes identifying optimal encoding parameters for encoding a current block, wherein the optimal encoding parameters minimize a rate-distortion optimization cost function, which includes using a gradient value for the current block obtained from a neural-network-based video quality model generated gradient map obtained from the neural-network-based video quality model for the current frame, obtaining a restoration filtered reconstructed frame by restoration filtering a reconstructed frame, obtained by decoding the encoded frame data, using the neural-network-based video quality model generated gradient map obtained for the reconstructed frame.

Abstract: Disclosed herein are macrocyclic compounds that inhibit the binding of KRas. Also disclosed are pharmaceutical compositions that include the compounds. Methods of using the KRas inhibitors are disclosed, alone or in combination with other therapeutic agents, for the treatment of autoimmune diseases or conditions, heteroimmune diseases or conditions, cancer, including lymphoma, leukemia, lung cancer, colorectal cancer, pancreatic cancer, and other diseases or conditions dependent on KRas interaction.

Abstract: An electronic device manufacturing system configured to receive, by a processor, input data reflecting a feature related to a manufacturing process of a substrate. The manufacturing system is further configured to train a machine-learning model based on the input data reflecting the feature. The manufacturing system is further configured to modify the machine-learning model in view of the virtual knob for the feature.

Abstract: The current disclosure describes techniques for managing vertical alignment or overlay in semiconductor manufacturing using machine learning. Alignments of interconnection features in a fan-out WLP process are evaluated and managed through the disclosed techniques. Big data and neural networks system are used to correlate the overlay error source factors with overlay metrology categories. The overlay error source factors include tool related overlay source factors, wafer or die related overlay source factors and processing context related overlay error source factors.

Abstract: A semiconductor structure includes a first cell, a second cell, a first bit line, a first source line, a second bit line, and a second source line. The first cell includes a first source structure and a first drain structure. The second cell includes a second source structure and a second drain structure. The first bit line is coupled to the first drain structure, the first source line is coupled to the first source structure, the second bit line is coupled to the second drain structure, and the second source line is coupled to the second source structure. The first source line and the first bit line are alternately arranged, and the second source line and the second bit line are alternately arranged. A distance between the first source line and the first bit line is similar to a distance between the second source line and the second bit line.

Abstract: The present invention features interferon-free therapies for the treatment of HCV. Preferably, the treatment is over a shorter duration of treatment, such as no more than 12 weeks. In one aspect, the treatment comprises administering at least two direct acting antiviral agents to a subject with HCV infection, wherein the treatment lasts for 12 weeks and does not include administration of either interferon or ribavirin, and said at least two direct acting antiviral agents comprise (a) Compound 1 or a pharmaceutically acceptable salt thereof and (b) Compound 2 or a pharmaceutically acceptable salt thereof.

Abstract: A driving circuit is provided. The driving circuit includes a first switch, a second switch, a temperature sensing circuit, and a control circuit. The first terminal of the first switch is configured to receive an input voltage. The first terminal of the second switch is coupled to the second terminal of the first switch, and the second terminal of the second switch is coupled to a ground. The temperature sensing circuit is configured to sense a temperature indicating signal. The control circuit is configured to receive a PWM control signal and the temperature indicating signal and provide an adjusted PWM control signal according to the PWM control signal and the temperature indicating signal. An on-time of the adjusted PWM control signal is different from an on-time of the PWM control signal.

Abstract: A flip-chip light-emitting diode (LED) includes: a substrate having a patterned surface formed with a protrusion unit including first and second protrusions; a light-emitting epitaxial layer that is disposed on the second protrusions and that includes first and second semiconductor layers and an active layer interposed therebetween; first and second electrodes connected to the first and second semiconductor layers, respectively; and a passivation layer having an epitaxial-covering portion and a substrate-covering portion. The substrate-covering portion of the passivation layer has a top surface with hillocks having a height lower than that of the second protrusions. A high-voltage light-emitting device is also disclosed.

Abstract: The present disclosure provides a conductive paste for preparing flexible porous piezoresistive sensor, a method for making the same, and application thereof. The conductive paste includes a conductive carbon material, a sacrificial template and a high molecular polymer matrix. The high molecular polymer matrix includes a high molecular polymer and an organic solvent, and the mass ratio of the high molecular polymer to the organic solvent is 1:2 to 1:3; and based on the total mass of the conductive carbon material, the sacrificial template and the high molecular polymer, the mass percentage of the conductive carbon material is 2%-5%, the mass percentage of the sacrificial template is 75%-85%, and the mass percentage of the high molecular polymer is 10%-23%. This disclosure uses a sacrificial template with adjustable particle size to prepare conductive paste, greatly increasing number of nanopores or micropores after conductive paste is formed into a film.

Abstract: A temperature-sensitive cell culture composition is provided. The temperature-sensitive cell culture composition includes a hydrogel, a cellulose, a gelatin and a collagen. Based on 1 part by weight of the collagen, a content of the hydrogel is between 0.03 parts by weight and 60 parts by weight, a content of the cellulose is between 150 parts by weight and 360 parts by weight, and a content of the gelatin is between 21 parts by weight and 12 parts by weight. In addition, a method for using the temperature-sensitive cell culture composition, a method for forming the temperature-sensitive cell culture composition, and a use of the temperature-sensitive cell culture composition are also provided.