Abstract: An IC structure that includes a trench isolation (TI) in a substrate having three portions of different dielectric materials. The portions may also have different widths. The TI may include a lower portion including a first dielectric material and having a first width, a middle portion including the first dielectric material and an outer second dielectric material, and an upper portion including a third dielectric material and having a second width greater than the first width. The first, second and third dielectric materials are different.

Abstract: An IC structure that includes a trench isolation (TI) in a substrate having three portions of different dielectric materials. The portions may also have different widths. The TI may include a lower portion including a first dielectric material and having a first width, a middle portion including the first dielectric material and an outer second dielectric material, and an upper portion including a third dielectric material and having a second width greater than the first width. The first, second and third dielectric materials are different.

Abstract: A structure includes a semiconductor fin; a first source/drain region and a second source/drain region in the semiconductor fin; a first doping region about the first source/drain region, defining a channel region in the semiconductor fin; and a second doping region about the second source/drain region, defining a drain extension in the semiconductor fin. A gate structure is over the channel region and the drain extension. The gate structure includes a gate dielectric layer, a first metal layer adjacent a second metal layer over the gate dielectric layer, and a contiguous gate conductor over the first metal layer and the second metal layer. One of the metal layers is over the channel region and the other is over the drain extension. The metal layers may have different thicknesses and/or work functions, to improve transconductance and RF performance of an LDMOS FinFET including the structure.

Abstract: Structures including a passive device and methods of forming such structures. Multiple fins are positioned on a substrate, and an interconnect structure is positioned over the substrate. The fins contain a polycrystalline semiconductor material, and the interconnect structure includes a passive device that is positioned over the fins. The passive device may be, for example, an inductor or a transmission line.

Abstract: A structure includes a semiconductor fin; a first source/drain region and a second source/drain region in the semiconductor fin; a first doping region about the first source/drain region, defining a channel region in the semiconductor fin; and a second doping region about the second source/drain region, defining a drain extension in the semiconductor fin. A gate structure is over the channel region and the drain extension. The gate structure includes a gate dielectric layer, a first metal layer adjacent a second metal layer over the gate dielectric layer, and a contiguous gate conductor over the first metal layer and the second metal layer. One of the metal layers is over the channel region and the other is over the drain extension. The metal layers may have different thicknesses and/or work functions, to improve transconductance and RF performance of an LDMOS FinFET including the structure.

Abstract: A device is disclosed that includes a source region positioned in a first doped well region in a semiconductor substrate and a drain region positioned in a second doped well region in the substrate, wherein there is a well gap between the first doped well region and the second doped well region. The device also includes a gate structure that includes a first gate insulation layer positioned above an upper surface of the substrate, wherein the first gate insulation layer extends from a drain-side sidewall of the gate structure to a location above the well gap, and a second gate insulation layer having a first portion positioned above the upper surface of the substrate and a second portion positioned above the first gate insulation layer.

Abstract: Structures including a passive device and methods of forming such structures. Multiple fins are positioned on a substrate, and an interconnect structure is positioned over the substrate. The fins contain a polycrystalline semiconductor material, and the interconnect structure includes a passive device that is positioned over the fins. The passive device may be, for example, an inductor or a transmission line.

Abstract: A semiconductor device is provided, which includes an array of active regions, gate stacks and substantially uniform epitaxial structures. The gate stacks of the array include a first gate stack and a second gate stack over an active region. An active pillar between the first gate stack and the second gate stack, and the active pillar separating two substantially uniform epitaxial structures. A contact structure over the active pillar, positioned equidistant from the first gate stack and the second gate stack.

Abstract: A semiconductor device is provided, which includes an array of active regions, gate stacks and substantially uniform epitaxial structures. The gate stacks of the array include a first gate stack and a second gate stack over an active region. An active pillar between the first gate stack and the second gate stack, and the active pillar separating two substantially uniform epitaxial structures. A contact structure over the active pillar, positioned equidistant from the first gate stack and the second gate stack.

Abstract: An electric personnel lift device that includes a base assembly having two columns that are laterally spaced apart. Each of the two columns has a lift cylinder device mounted in the respective column and extending upward. The electric personnel lift device further includes a height adjustable platform assembly having an operator platform and two laterally spaced apart handrail assemblies connected to the operator platform. The height adjustable platform assembly is connected to an upper end of a movable portion of each lift cylinder device and is slidably coupled to the columns, wherein the height adjustable platform assembly is movable between at least a lowered position and a raised position.

Abstract: A forklift includes an integrated battery box. The forklift includes a forklift body having a mounting chamber with an opening to a side of the forklift body. The battery box is loaded into the mounting chamber from the side opening. After the battery box is loaded into the mounting chamber, a mechanical connection between the battery box and the forklift is realized by the locking mechanism, and a circuit connection between the battery box and an electric control mechanism of the forklift is realized by a plug-in device.

Abstract: A pallet truck handle assembly is provided, including a handle hinge seat, a handle control head, and a removable handle tube having a first end and a second end. The first end of the removable handle tube is removably connected to the handle hinge seat by one or more fasteners, and the second end of the removable handle tube is connected to the handle control head. The handle assembly further includes a handle control cable or handle wiring harness having a first end and a second end. The first end of the handle control cable or handle wiring harness is located proximate the first end of the removable handle tube and the second end of the handle control cable or handle wiring harness is connected to the handle control head, and the handle hinge seat has a support member that receives a chassis control cable or a chassis wiring harness.

Abstract: An electric personnel lift device that includes a base assembly having a frame and two columns that are laterally spaced apart and mounted to the frame is disclosed. Each of the two columns has a lift cylinder device mounted in the respective column and extending upward. The electric personnel lift device further includes a height adjustable platform assembly having an operator platform and two laterally spaced apart handrail assemblies connected to the operator platform. The height adjustable platform assembly is connected to an upper end of a movable portion of each lift cylinder device and is slidably coupled to the columns, wherein the height adjustable platform assembly is movable between at least a lowered position and a raised position.

Abstract: An electric personnel lift device that includes a base assembly having a frame and two columns that are laterally spaced apart and mounted to the frame is disclosed. Each of the two columns has a lift cylinder device mounted in the respective column and extending upward. The electric personnel lift device further includes a height adjustable platform assembly having an operator platform and two laterally spaced apart handrail assemblies connected to the operator platform. The height adjustable platform assembly is connected to an upper end of a movable portion of each lift cylinder device and is slidably coupled to the columns, wherein the height adjustable platform assembly is movable between at least a lowered position and a raised position.

Abstract: An electric personnel lift device that includes a base assembly having two columns that are laterally spaced apart. Each of the two columns has a lift cylinder device mounted in the respective column and extending upward. The electric personnel lift device further includes a height adjustable platform assembly having an operator platform and two laterally spaced apart handrail assemblies connected to the operator platform. The height adjustable platform assembly is connected to an upper end of a movable portion of each lift cylinder device and is slidably coupled to the columns, wherein the height adjustable platform assembly is movable between at least a lowered position and a raised position.

Abstract: A pallet truck handle assembly is provided, including a handle hinge seat, a handle control head, and a removable handle tube having a first end and a second end. The first end of the removable handle tube is removably connected to the handle hinge seat by one or more fasteners, and the second end of the removable handle tube is connected to the handle control head. The handle assembly further includes a handle control cable or handle wiring harness having a first end and a second end. The first end of the handle control cable or handle wiring harness is located proximate the first end of the removable handle tube and the second end of the handle control cable or handle wiring harness is connected to the handle control head, and the handle hinge seat has a support member that receives a chassis control cable or a chassis wiring harness.

Abstract: The disclosure provides a non-contact switch device for use on material handling equipment, including a reed switch and a magnet, wherein the non-contact switch device has on and off positions achieved by the presence or absence of magnetic induction between the magnet and the reed switch. The non-contact switch devices are disclosed in the form of a main power switch, an interlock switch, a limit switch.

Abstract: The disclosure provides a non-contact switch device for use on material handling equipment, including a reed switch and a magnet, wherein the non-contact switch device has on and off positions achieved by the presence or absence of magnetic induction between the magnet and the reed switch. The non-contact switch devices are disclosed in the form of a main power switch, an interlock switch, a limit switch.

Abstract: An intermediate semiconductor structure of a FinFET device in fabrication includes a substrate, a plurality of fin structures coupled to the substrate and a dummy gate disposed perpendicularly over the fin structures. A portion of the dummy gate is removed between the fin structures to create one or more vias and the one or more vias are filled with a dielectric. The dummy gate is then replaced with a metal gate formed around the dielectric-filled vias.