Abstract: Method and apparatus to efficiently detect/correct memory errors. A command and an address associated with a data transaction may be received. Parity information associated with the command/address may be received. In response to detecting a parity error, a data array of a memory device may be locked. An indicator indicating the parity error may be sent. A first portion of a memory page to store data may be reserved. A second portion of the memory page to store error correction codes associated with the data may be reserved. The second portion's size may equal or exceed the error correction code capacity needed for the maximum possible data stored in the first portion. A cache line of data may be stored in the first portion. An error correction code associated with the cache line of data may be stored in the second portion.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: An optical bus interconnects two or more processors in a multiprocessor system. One or more electrical-to-optical (“E-O”) transmitters are optically coupled to the optical bus using optical couplers. The E-O transmitters receive electrical signals from the processors and convert the electrical signals to optical signals to be guided onto the optical bus. Optical-to-electrical (“O-E”) receivers are also coupled to the optical bus using the optical couplers. The O-E receivers receive optical signals from the optical bus and convert the optical signals to electrical signals for the processors.

Abstract: Some embodiments of the invention accurately account for power dissipation in memory systems that include individual memory modules by keeping track of the number of read requests, the number of write requests, and the number of activate requests that are applied to the individual memory modules during selected time periods. If the sum of these totals exceeds a threshold level, the embodiments throttle the memory system, either by throttling the entire memory system based in response to the most active memory module, or by throttling individual memory modules as needed. Other embodiments of the invention may assign the same or different weights to activate requests, read requests, and write requests. Other embodiments are described and claimed.

Abstract: An electronic system includes a device and a controller to the device. The controller is adapted to calculate a temperature estimate of the device and to control access to the device in accordance with the calculated temperature estimate.

Abstract: In some embodiments, a system includes a first memory assembly coupled to a first channel and a second memory assembly coupled to a second channel. The system includes a memory controller to write first and second primary data sections to the first and second memory assemblies, respectively, and write first and second redundant data sections to the second and first memory assemblies, respectively, wherein the first and second redundant data sections are redundant with respect to the first and second primary data sections, respectively. Other embodiments are described and claimed.

Abstract: In some embodiments, a memory controller includes first and second memory channel interfaces and memory access control circuitry. The memory access control circuitry is to send first and second primary data sections to the first and second memory channel interfaces, respectively, and send first and second redundant data sections to the second and first memory channel interfaces, respectively. The first and second redundant data sections are redundant with respect to the first and second primary data sections, respectively. Other embodiments are described and claimed.

Abstract: In some embodiments, a memory controller includes first and second memory channel interfaces and memory access control circuitry. The memory access control circuitry is to send first and second primary data sections to the first and second memory channel interfaces, respectively, and send first and second redundant data sections to the second and first memory channel interfaces, respectively. The first and second redundant data sections are redundant with respect to the first and second primary data sections, respectively. Other embodiments are described and claimed.

Abstract: An electronic system includes a device and a controller to the device. The controller is adapted to calculate a temperature estimate of the device and to control access to the device in accordance with the calculated temperature estimate.

Abstract: Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.

Abstract: In some embodiments, a memory controller includes first and second memory channel interfaces and memory access control circuitry. The memory access control circuitry is to send first and second primary data sections to the first and second memory channel interfaces, respectively, and send first and second redundant data sections to the second and first memory channel interfaces, respectively. The first and second redundant data sections are redundant with respect to the first and second primary data sections, respectively. Other embodiments are described and claimed.