Abstract: The present invention provides an optical transmitter and a light intensity monitoring method that provide reliable APC feedback for a semiconductor laser equipped with an SOA. The optical transmitter includes an SOA integrated EA-DFB having a DFB laser, an EA modulator connected to the DFB laser, and an SOA connected to the EA modulator. In the structure of the optical transmitter, a light detector part is disposed forward of the output end side of an SOA part. The light detector part changes part of an output light beam from the SOA part into an electric current and detects light, while guiding the remaining part of the output light beam to a waveguide. With the light detector part disposed forward for the SOA part, it is possible to feed back the output result from the SOA part. Hence, good APC is possible.

Abstract: An electronic device includes: a support member that has a metallic placement surface joined to the conductive bonding layer, and a metallic sealing surface provided on an outer side of the placement surface in an in-plane direction of the placement surface to adjoin the placement surface and to surround the placement surface; and a resin member, which is a synthetic resin molded article, joined to the sealing surface and covering the electronic component. The sealing surface includes a rough surface having a plurality of laser irradiation marks having a substantially circular shape. The rough surface includes a first region and a second region. The second region has a higher density of the laser irradiation marks in the in-plane direction than the first region.

Abstract: A metal member includes a metal substrate and a porous metal layer. A composite includes the metal member and a resin member. The metal substrate has one surface, is made of a metal material, and has a region formed as an uneven layer having an uneven shape with respect to the one surface. The porous metal layer has a mesh-like shape and is formed on the uneven layer. The uneven layer includes a plurality of protrusions protruding in a direction normal to the one surface.

Abstract: The present invention provides an optical transmitter and a light intensity monitoring method that provide reliable APC feedback for a semiconductor laser equipped with an SOA. The optical transmitter includes an SOA integrated EA-DFB having a DFB laser, an EA modulator connected to the DFB laser, and an SOA connected to the EA modulator. In the structure of the optical transmitter, a light detector part is disposed forward of the output end side of an SOA part. The light detector part changes part of an output light beam from the SOA part into an electric current and detects light, while guiding the remaining part of the output light beam to a waveguide. With the light detector part disposed forward for the SOA part, it is possible to feed back the output result from the SOA part. Hence, good APC is possible.

Abstract: A semiconductor device includes: a semiconductor chip having an electrode on one surface; a first conductive member disposed on one surface side of the semiconductor chip; a metal member having a base member and a membrane and disposed between the semiconductor chip and the first conductive member; a first solder disposed between the electrode of the semiconductor chip and the metal member; and a second solder disposed between the metal member and the first conductive member. The membrane has a metal thin film arranged on the surface of the base member and an uneven oxide film. The uneven oxide film is arranged on the metal thin film in at least a part of a connection region of a surface of the metal member, the connection region connecting a first connection region to which the first solder is connected and a second connection region to which the second solder is connected.

Abstract: The present invention relates to a driving method for an SOA integrated EA-DFB laser monolithically-integrating a DFB laser portion, an EA modulator portion and an SOA portion, on a same substrate, wherein an electric current ISOA is injected into the SOA portion within a range of a power consumption not exceeding a total amount of a power consumption eliminated in the DFB laser portion of the SOA integrated EA-DFB laser and a power consumption eliminated in the EA modulator portion of the SOA integrated EA-DFB laser by eliminating an elimination amount ?IDFB from a maximum injection electric current into a DFB laser portion of an EA-DFB laser allowable in a case of mounting the EA-DFB laser on an optical transmission module.

Abstract: The present invention relates to a driving method for an SOA integrated EA-DFB laser monolithically-integrating a DFB laser portion, an EA modulator portion and an SOA portion, on a same substrate, wherein an electric current ISOA is injected into the SOA portion within a range of a power consumption not exceeding a total amount of a power consumption eliminated in the DFB laser portion of the SOA integrated EA-DFB laser and a power consumption eliminated in the EA modulator portion of the SOA integrated EA-DFB laser by eliminating an elimination amount ?IDFB from a maximum injection electric current into a DFB laser portion of an EA-DFB laser allowable in a case of mounting the EA-DFB laser on an optical transmission module.

Abstract: A semiconductor device includes: a semiconductor element; a case; a terminal made of a conductive material and embedded in the case, a part of the terminal being exposed to the outside, having an outermost surface that includes a first film, and having a base portion; a bonding wire that is connected to the first film and electrically connects the semiconductor element and the terminal; and a protection member that is more flexible than the case and covers a contact portion of the terminal contacting with the bonding wire. The first film is removed from an area around the contact portion with the bonding wire in the part of the terminal being exposed to the outside, causing the base portion to be exposed. An exposed portion of the base portion and the protection member adhere to each other.

Abstract: A semiconductor device includes: a semiconductor chip having an electrode on one surface; a first conductive member disposed on one surface side of the semiconductor chip; a metal member having a base member and a membrane and disposed between the semiconductor chip and the first conductive member; a first solder disposed between the electrode of the semiconductor chip and the metal member; and a second solder disposed between the metal member and the first conductive member. The membrane has a metal thin film arranged on the surface of the base member and an uneven oxide film. The uneven oxide film is arranged on the metal thin film in at least a part of a connection region of a surface of the metal member, the connection region connecting a first connection region to which the first solder is connected and a second connection region to which the second solder is connected.

Abstract: A semiconductor device includes: a semiconductor element; a case; a terminal made of a conductive material and embedded in the case, a part of the terminal being exposed to the outside, having an outermost surface that includes a first film, and having a base portion; a bonding wire that is connected to the first film and electrically connects the semiconductor element and the terminal; and a protection member that is more flexible than the case and covers a contact portion of the terminal contacting with the bonding wire. The first film is removed from an area around the contact portion with the bonding wire in the part of the terminal being exposed to the outside, causing the base portion to be exposed. An exposed portion of the base portion and the protection member adhere to each other.

Abstract: An object is to form a rough surface for ensuring adhesion between a metal member and other members, or a rough surface for suppressing solder expansion in the metal member using an energy beam having energy density lower than a related art. A surface processing method of a metal member, in which a metal thin film is arranged on a surface of a base, includes: melting or evaporating a surface portion of the metal thin film by irradiating the metal thin film with a pulse-oscillated laser beam having energy density of 100 J/cm2 or less and a pulse width of 1 ?s or less; and roughening the surface of the metal thin film by solidifying the surface portion of the metal thin film after the melting or evaporating. The metal thin film is made of at least one of Ni, Au, Pd, and Ag as a main component.

Abstract: An object is to form a rough surface for ensuring adhesion between a metal member and other members, or a rough surface for suppressing solder expansion in the metal member using an energy beam having energy density lower than a related art. A surface processing method of a metal member, in which a metal thin film is arranged on a surface of a base, includes: melting or evaporating a surface portion of the metal thin film by irradiating the metal thin film with a pulse-oscillated laser beam having energy density of 100 J/cm2 or less and a pulse width of 1 ?s or less; and roughening the surface of the metal thin film by solidifying the surface portion of the metal thin film after the melting or evaporating. The metal thin film is made of at least one of Ni, Au, Pd, and Ag as a main component.

Abstract: A stereophonic apparatus uses three speakers respectively installed toward a front of a vehicle on both shoulders of a seat back of a driver's seat and toward a back of the vehicle on an exact center in front of a driver. This configuration provides more effectively exerted positioning effects for a virtual sound source realized by using the three speakers, especially for the effects in a frontward field of sound.

Abstract: A stereophonic apparatus uses three speakers respectively installed toward a front of a vehicle on both shoulders of a seat back of a driver's seat and toward a back of the vehicle on an exact center in front of a driver. This configuration provides more effectively exerted positioning effects for a virtual sound source realized by using the three speakers, especially for the effects in a frontward field of sound.

Abstract: A process for removing an organic compound or compounds which is/are a chlorinated hydrocarbon or hydrocarbon by catalytic combustion, the process including the step of contacting the organic compound or compounds with a combustion catalyst which includes a mixture of a zeolite and a metal oxide, where the metal oxide is loaded with at least one of the elements of the platinum group.

Abstract: A combustion catalyst for removing organic compounds which includes a mixture of a zeolite and a metal oxide containing at least one of the elements of the platinum group. Another combustion catalyst for removing organic compounds which comprises an alumina having such a pore size distribution that, where “a” represents a pore radius in ? at the maximum of the pore size distribution curve, the accumulated pore volume of pores having radii in the range of “a” ±25 ? is at least 65% of the total volume of all the pores, the alumina containing less than 1% by weight of rare earth elements and being loaded with one or more elements of the platinum group. A process for removing organic compounds, the process including the step of contacting organic compounds with either one of the above catalysts.

Abstract: Catalysts for removing organic compounds from a gas stream containing the same and processes for removing organic compounds from the gas stream using the catalysts are disclosed. According to the first aspect, a combustion catalyst for removing organic compounds comprises a mixture of a zeolite and a metal oxide containing at least one of the elements of the platinum group. According to the second aspect, a combustion catalyst for removing organic compounds comprises an alumina having such a pore size distribution that, where “a” represents a pore radius in ? at the maximum of the pore size distribution curve, the accumulated pore volume of pores having radii in the range of “a” ±25 ? is at least 65% of the total volume of all the pores, said alumina containing less than 1% by weight of rare earth elements and being loaded with one or more elements of the platinum group.

Abstract: To provide a method for localizing sound image of reproducing sound outside right and left speakers, by processing and controlling audio signals which allows sound image localization outside the speakers for reproducing the controlled audio signals by means of a very concise hardware architecture. When the audio signals 1L, 1R of right and left channels recorded on fit media for stereophonic reproduction are reproduced, process to emphasize a factor of a sense of direction that listener's hearing has is applied by delaying phase characteristic of the audio signals 1L, 1R without change of frequency characteristics with increase in frequency to drive the speakers 7L , 7R of right and left channels.

Abstract: A combustion catalyst for removing organic compounds from a gas stream containing the same and a process for removing organic compounds from the gas stream using the catalyst are disclosed. The combustion catalyst comprises a first catalyst comprising a metal oxide containing at least one of the elements of the platinum group, and a second catalyst comprising a mixture of zeolite with a metal oxide containing at least one of the elements of the platinum group, in a manner such that the organic compounds are contacted first with the first catalyst and then with the second catalyst, whereby the organic compounds can be efficiently removed at a low temperature.

Abstract: The disclosure relates to localization of an acoustic image out of the head in hearing a reproduced sound via headphone, and includes the steps of: with audio signals S1-S11 of left, right channels reproduced by an appropriate audio appliances as input signals, branching the input signals of the left and right channels to at least two systems; to form signals of each systems corresponding to the left, right channels with left, right speaker sounds imagined in an appropriate sound space with respect to the head of a listener wearing a headphone Hp and virtual reflected sound in the virtual sound space SS caused from a sound generated from the left and the right virtual speaker SPL, SPR, creating a virtual speaker sound signal by processing so that the virtual speaker sounds from the left and the right speakers are expressed by direct sound signals, and virtual reflected sound signals by processing so that the virtual reflected sound is expressed by reflected sound signals; mixing the direct sound signal and re