Patents by Inventor Wataru Shibayama
Wataru Shibayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190250512Abstract: Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm).Type: ApplicationFiled: October 2, 2017Publication date: August 15, 2019Applicant: NISSAN CHEMICAL CORPORATIONInventors: Shuhei SHIGAKI, Satoshi TAKEDA, Wataru SHIBAYAMA, Makoto NAKAJIMA, Rikimaru SAKAMOTO
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Patent number: 10372040Abstract: A resist underlayer film forming composition for lithography that can be used as a hard mask. The composition can improve pattern resolution due to having a trihalogenoacetamide skeleton. A resist underlayer film forming composition for lithography comprising a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis condensate thereof, or a combination thereof as a silane, wherein the hydrolyzable silane comprises a silane having a halogen-containing carboxylic acid amide group.Type: GrantFiled: December 4, 2015Date of Patent: August 6, 2019Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Wataru Shibayama, Kenji Takase, Rikimaru Sakamoto
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Patent number: 10197917Abstract: The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) [where R1 is an organic group of Formula (2): and is bonded to a silicon atom through a Si?C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane.Type: GrantFiled: June 16, 2015Date of Patent: February 5, 2019Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Makoto Nakajima, Wataru Shibayama, Satoshi Takeda, Kenji Takase
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Patent number: 10139729Abstract: A resin composition for pattern reversal can be embedded between traces of the pattern of a stepped substrate formed on the substrate to be processed and can form a smooth film. A polysiloxane composition for coating used in the steps of forming an organic underlayer film on a semiconductor substrate, applying a silicon hard mask-forming composition onto the underlayer film and baking the applied silicon hard mask-forming composition to form a silicon hard mask, applying a resist composition onto the silicon mask to form a resist film, exposing the resist film to light and developing the resist film after exposure to give a resist pattern, etching the silicon mask, etching the underlayer film, applying the polysiloxane composition for coating onto the patterned organic underlayer film to expose an upper surface of the underlayer film by etch back, and etching the underlayer film to reverse the pattern.Type: GrantFiled: August 11, 2015Date of Patent: November 27, 2018Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Hiroaki Yaguchi, Makoto Nakajima, Wataru Shibayama, Satoshi Takeda, Hiroyuki Wakayama, Rikimaru Sakamoto
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Patent number: 10082735Abstract: A resist underlayer film-forming composition for lithography having an aliphatic polycyclic structure including, as a silane, a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a combination thereof, in which the aliphatic polycyclic structure is a structure which a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4-(a+b)??Formula (1) (where R1 is an organic group having an aliphatic polycyclic structure and bonded to a Si atom through a Si—C bond; R3 is an ethoxy group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3) has, or a structure included in a compound added as an aliphatic polycyclic compound, an aliphatic polycyclic dicarboxylic acid, or an aliphatic polycyclic dicarboxylic acid anhydride, each optionally having a double bond, a hydroxy group, or an epoxy group.Type: GrantFiled: July 10, 2015Date of Patent: September 25, 2018Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Wataru Shibayama, Shuhei Shigaki, Makoto Nakajima, Satoshi Takeda, Hiroyuki Wakayama, Rikimaru Sakamoto
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Publication number: 20180239250Abstract: A resist underlayer film forming composition for lithography for forming a resist underlayer film that can be used as a hard mask, including: a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis condensate thereof, or a combination thereof as a silane, wherein the hydrolyzable silane includes at least one hydrolyzable silane selected from the group made of hydrolyzable silanes of Formula (1), Formula (2), and Formula (3): A method for producing a semiconductor device including: forming an organic underlayer film on a semiconductor substrate; applying the resist underlayer film forming composition onto the organic underlayer film and baking the composition to form a resist underlayer film; applying a resist film forming composition onto the resist underlayer film to form a resist film; exposing the resist film to light; developing the resist film after exposure to obtain a resist pattern; and etching in this order.Type: ApplicationFiled: January 25, 2016Publication date: August 23, 2018Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Wataru SHIBAYAMA, Makoto NAKAJIMA, Yuichi GOTO, Rikimaru SAKAMOTO
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Publication number: 20180197731Abstract: A composition to be applied onto a resist pattern comprising a polysiloxane obtained by hydrolytically condensing a hydrolyzable silane and a carboxylic ester solvent or an ether solvent, wherein the hydrolyzable silane includes a vinyl group- or (meth)acryloxy group-containing hydrolyzable silane. A hydrolyzable silane includes the vinyl group- or (meth)acryloxy group-containing hydrolyzable silane at a content of 20 to 100 mol % in the total hydrolyzable silane. A method for producing a semiconductor device, the method includes: a step (1) of applying a resist onto a substrate; a step (2) of exposing a resist film to light and subsequently developing the resist film to form a resist pattern; a step (3) of applying the composition as described above onto the resist pattern during the development or after the development; and a step (4) of removing the resist pattern by etching to reverse the pattern.Type: ApplicationFiled: September 9, 2016Publication date: July 12, 2018Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Shuhei SHIGAKI, Rikimaru SAKAMOTO, Makoto NAKAJIMA, Wataru SHIBAYAMA
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Publication number: 20180181000Abstract: A radiation sensitive composition including a siloxane polymer exhibiting phenoplast crosslinking reactivity as a base resin, which is excellent in resolution and can be used as a radiation sensitive composition capable of allowing a pattern having a desired-shape to be formed with sufficient precision. A radiation sensitive composition including as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof; and a photoacid generator, in which the hydrolyzable silane includes hydrolyzable silanes of Formula (1) R1 aR2bSi(R3)4-(a+b) ??Formula (1) wherein R1 is an organic group of Formula (1-2) and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R3 is a hydrolyzable group; and Formula (2) R7cR8dSi(R9)4-(c+d) ??Formula (2) wherein R7 is an organic group of Formula (2-1) and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R9 is a hydrolyzable group.Type: ApplicationFiled: June 7, 2016Publication date: June 28, 2018Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Makoto NAKAJIMA, Kenji TAKASE, Satoshi TAKEDA, Wataru SHIBAYAMA
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Publication number: 20180149977Abstract: The invention provides a composition for coating a resist pattern and reversing the pattern by utilizing a difference in etching rates. A composition for applying to a resist pattern includes a component (A) which is at least one compound selected from the group consisting of a metal oxide (a1), a polyacid (a2), a polyacid salt (a3), a hydrolyzable silane (a4), a hydrolysis product (a5) of the hydrolyzable silane, and a hydrolysis condensate (a6) of the hydrolyzable silane; and a component (B), which is an aqueous solvent, in which the hydrolyzable silane (a4) is (i) a hydrolyzable silane containing an organic group having an amino group, (ii) a hydrolyzable silane containing an organic group having an ionic functional group, (iii) a hydrolyzable silane containing an organic group having hydroxy group, or (iv) a hydrolyzable silane containing an organic group having a functional group convertible to hydroxy group.Type: ApplicationFiled: May 20, 2016Publication date: May 31, 2018Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Wataru SHIBAYAMA, Makoto NAKAJIMA, Shuhei SHIGAKI, Hiroaki YAGUCHI, Rikimaru SAKAMOTO
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Publication number: 20170371242Abstract: The object of the present invention is to provide resist underlayer film-forming composition for forming resist underlayer film usable as hard mask and removable by wet etching process using chemical solution such as sulfuric acid/hydrogen peroxide. A resist underlayer film-forming composition for lithography comprises a component (A) and component (B), the component (A) includes a hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, the hydrolyzable silane includes hydrolyzable silane of Formula (1):R1aR2bSi(R3)4?(a+b) (where R1 is organic group of Formula (2): and is bonded to silicon atom through a Si—C bond; R3 is an alkoxy group, acyloxy group, or halogen group; is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3), and the component (B) is cross-linkable compound having ring structure having alkoxymethyl group or hydroxymethyl group, cross-linkable compound having epoxy group or blocked isocyanate group.Type: ApplicationFiled: November 6, 2015Publication date: December 28, 2017Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Hiroyuki WAKAYAMA, Makoto NAKAJIMA, Wataru SHIBAYAMA, Masahisa ENDO
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Publication number: 20170322491Abstract: A resist underlayer film forming composition for lithography that can be used as a hard mask. The composition can improve pattern resolution due to having a trihalogenoacetamide skeleton. A resist underlayer film forming composition for lithography comprising a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis condensate thereof, or a combination thereof as a silane, wherein the hydrolyzable silane comprises a silane having a halogen-containing carboxylic acid amide group.Type: ApplicationFiled: December 4, 2015Publication date: November 9, 2017Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Wataru SHIBAYAMA, Kenji TAKASE, Rikimaru SAKAMOTO
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Publication number: 20170271151Abstract: A resin composition for pattern reversal can be embedded between traces of the pattern of a stepped substrate formed on the substrate to be processed and can form a smooth film. A polysiloxane composition for coating used in the steps of forming an organic underlayer film on a semiconductor substrate, applying a silicon hard mask-forming composition onto the underlayer film and baking the applied silicon hard mask-forming composition to form a silicon hard mask, applying a resist composition onto the silicon mask to form a resist film, exposing the resist film to light and developing the resist film after exposure to give a resist pattern, etching the silicon mask, etching the underlayer film, applying the polysiloxane composition for coating onto the patterned organic underlayer film to expose an upper surface of the underlayer film by etch back, and etching the underlayer film to reverse the pattern.Type: ApplicationFiled: August 11, 2015Publication date: September 21, 2017Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Hiroaki YAGUCHI, Makoto NAKAJIMA, Wataru SHIBAYAMA, Satoshi TAKEDA, Hiroyuki WAKAYAMA, Rikimaru SAKAMOTO
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Patent number: 9760006Abstract: There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising: a hydrolyzable organosilane having a urea group; a hydrolysis product thereof; or a hydrolysis-condensation product thereof.Type: GrantFiled: January 8, 2009Date of Patent: September 12, 2017Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Makoto Nakajima, Yuta Kanno, Wataru Shibayama
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Patent number: 9725618Abstract: A resist underlayer film-forming composition including: (A) component: an isopoly or heteropoly acid, or a salt thereof, or a combination thereof; and (B) component: polysiloxan, poly hafnium oxide or zirconium oxide, or a combination thereof, wherein an amount of the (A) component is 0.1 to 85% by mass of a total amount of the (A) component and the (B) component; and polysiloxan is a hydrolysis-condensation product of hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) and a hydrolyzable silane whose (a+b) is 0 is contained in a proportion of 60 to 85 mol % of a total hydrolyzable silane in Formula (1); the poly hafnium oxide is a hydrolysis-condensation product of hydrolyzable hafnium of Formula (2): Hf(R4)4??Formula (2) and the zirconium oxide is a hydrolysis-condensation product of hydrolyzable zirconium of Formula (3) or Formula (4): Zr(R5)4??Formula (3) ZrO(R6)2??Formula (4) or a hydrolysis-condensation product of a combination thereof.Type: GrantFiled: October 3, 2014Date of Patent: August 8, 2017Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Makoto Nakajima, Wataru Shibayama, Hiroyuki Wakayama, Satoshi Takeda
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SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING HALOGENATED SULFONYLALKYL GROUP
Publication number: 20170168397Abstract: A resist underlayer film allows an excellent resist pattern shape to be formed when an upper resist layer is exposed to light and developed using an alkaline developing solution or organic solvent; and composition for forming the resist underlayer film. A resist underlayer film-forming composition for lithography, the composition including, as a silane, hydrolyzable silane, hydrolysis product thereof, hydrolysis-condensation product thereof, or combination, wherein the hydrolyzable silane includes hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b) ??Formula (1) [where R1 is an organic group of Formula (2): —R4—R5—R6 ??Formula (2) (where R4 is optionally substituted C1-10 alkylene group; R5 is a sulfonyl group or sulfonamide group; and R6 is a halogen-containing organic group)]. In Formula (2), R6 may be a fluorine-containing organic group like trifluoromethyl group.Type: ApplicationFiled: July 9, 2015Publication date: June 15, 2017Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Wataru SHIBAYAMA, Kenji TAKASE, Makoto NAKAJIMA, Satoshi TAKEDA, Hiroyuki WAKAYAMA, Rikimaru SAKAMOTO -
Publication number: 20170153549Abstract: A resist underlayer film-forming composition for lithography having an aliphatic polycyclic structure including, as a silane, a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a combination thereof, in which the aliphatic polycyclic structure is a structure which a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) (where R1 is an organic group having an aliphatic polycyclic structure and bonded to a Si atom through a Si—C bond; R3 is an ethoxy group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3) has, or a structure included in a compound added as an aliphatic polycyclic compound, an aliphatic polycyclic dicarboxylic acid, or an aliphatic polycyclic dicarboxylic acid anhydride, each optionally having a double bond, a hydroxy group, or an epoxy group.Type: ApplicationFiled: July 10, 2015Publication date: June 1, 2017Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Wataru SHIBAYAMA, Shuhei SHIGAKI, Makoto NAKAJIMA, Satoshi TAKEDA, Hiroyuki WAKAYAMA, Rikimaru SAKAMOTO
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Publication number: 20170146906Abstract: The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs K.& laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b) ??Formula (1) [where R1 is an organic group of Formula (2): and is bonded to a silicon atom through a Si?C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane.Type: ApplicationFiled: June 16, 2015Publication date: May 25, 2017Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Makoto NAKAJIMA, Wataru SHIBAYAMA, Satoshi TAKEDA, Kenji TAKASE
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Patent number: 9627217Abstract: There is provided a composition for forming an EUV resist underlayer film which shows a good resit form. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (A) containing a hydrolyzed condensate of hydrolyzable silane (a); and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (B) containing a hydrolyzed condensate of hydrolyzable silane (a) and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. The polysiloxane (A) is preferably a co-hydrolyzed condensate of a tetraalkoxysilane, an alkyltrialkoxysilane and an aryltrialkoxysilane.Type: GrantFiled: February 22, 2013Date of Patent: April 18, 2017Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Shuhei Shigaki, Hiroaki Yaguchi, Wataru Shibayama, Rikimaru Sakamoto, BangChing Ho
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Publication number: 20160251546Abstract: A resist underlayer film-forming composition including: (A) component: an isopoly or heteropoly acid, or a salt thereof, or a combination thereof; and (B) component: polysiloxan, poly hafnium oxide or zirconium oxide, or a combination thereof, wherein an amount of the (A) component is 0.1 to 85% by mass of a total amount of the (A) component and the (B) component; and polysiloxan is a hydrolysis-condensation product of hydrolyzable silane of Formula (1): R1aR2bSi(R3)4-(a+b) ??(1) and a hydrolyzable silane whose (a+b) is 0 is contained in a proportion of 60 to 85 mol % of a total hydrolyzable silane in Formula (1); the poly hafnium oxide is a hydrolysis-condensation product of hydrolyzable hafnium of Formula (2): Hf(R4)4 ??(2) and the zirconium oxide is a hydrolysis-condensation product of hydrolyzable zirconium of Formula (3) or Formula (4): Zr(R5)4 ??(3) ZrO(R6)2 ??(4) or a hydrolysis-condensation product of a combination thereof.Type: ApplicationFiled: October 3, 2014Publication date: September 1, 2016Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Makoto NAKAJIMA, Wataru SHIBAYAMA, Hiroyuki WAKAYAMA, Satoshi TAKEDA
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Patent number: 9217921Abstract: There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask; and a forming method of a resist pattern using the underlayer film forming composition for lithography. A resist underlayer film forming composition for lithography comprising: as a silicon atom-containing compound, a hydrolyzable organosilane containing a sulfur atom-containing group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein in the whole silicon atom-containing compound, the ratio of a sulfur atom to a silicon atom is less than 5% by mole. The hydrolyzable organosilane is preferably a compound of Formula (1): [R1aSi(R2)3-a]bR3 wherein R3 has a partial structure of Formula (2): R4—S—R5.Type: GrantFiled: May 28, 2010Date of Patent: December 22, 2015Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Yuta Kanno, Makoto Nakajima, Wataru Shibayama