Patents by Inventor Wataru Shibayama
Wataru Shibayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240419073Abstract: A silicon-containing resist underlayer film forming composition that includes a hydrolysis condensate of a hydrolyzable silane represented by Formula (1) or a hydrolyzable silane mixture containing a hydrolyzable silane represented by Formula (2) is the silicon-containing resist underlayer film forming composition for forming a silicon-containing resist underlayer film soluble in a basic chemical solution.Type: ApplicationFiled: October 27, 2022Publication date: December 19, 2024Applicant: NISSAN CHEMICAL CORPORATIONInventors: Shuhei SHIGAKI, Taiki SAIJO, Wataru SHIBAYAMA
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Publication number: 20240393693Abstract: A silicon-containing resist underlayer film forming composition for forming a silicon-containing resist underlayer film to be used as an etching mask when a metal film containing at least one metal selected from the group consisting of Groups 6, 7, 8, and 9 of the periodic table of elements is dry-etched.Type: ApplicationFiled: September 2, 2022Publication date: November 28, 2024Applicant: NISSAN CHEMICAL CORPORATIONInventors: Wataru SHIBAYAMA, Satoshi TAKEDA, Shunsuke MORIYA, Takahiro KISHIOKA
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Publication number: 20240385521Abstract: A surface modifier for a resist pattern, which is to be applied to a substrate prior to the formation of a resist pattern with a thickness of 0.10 ?m or less on the substrate to thereby enhance the adhesion between the substrate and the resist pattern, including at least one member selected from among a compound represented by average compositional formula (1), a hydrolysate thereof and a hydrolytic condensate thereof: R1aR2b(OX)cSiO(4?a?b?c)/2 (1), wherein: R1 represents a —(CH2)nY group; Y represents a cyclohexenyl group, etc.; n is an integer of 0-4; R2 represents a monovalent C1-4 hydrocarbon group; X represents a hydrogen atom or a monovalent C1-4 hydrocarbon group; a is a numerical value of 1-2; b is a numerical value of 0-1; and c is a numerical value of 0-2, provided that a+b+c is not greater than 4.Type: ApplicationFiled: July 26, 2024Publication date: November 21, 2024Applicant: NISSAN CHEMICAL CORPORATIONInventors: Shuhei SHIGAKI, Satoshi TAKEDA, Wataru SHIBAYAMA, Makoto NAKAJIMA
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Publication number: 20240377745Abstract: A silicon-containing resist underlayer film having a maximum optical absorption coefficient (k value) in a wavelength range from 220 nm to 300 nm of 0.05 or greater.Type: ApplicationFiled: July 28, 2022Publication date: November 14, 2024Applicant: NISSAN CHEMICAL CORPORATIONInventors: Wataru SHIBAYAMA, Satoshi TAKEDA, Shuhei SHIGAKI, Makoto NAKAJIMA
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Patent number: 12084592Abstract: A coating composition for pattern inversion that fills a gap in an organic underlayer film pattern formed on a substrate to be processed by transferring a resist pattern to an underlayer and forms a flat polysiloxane film, the coating composition including a polysiloxane obtained by a reaction of an alcohol with a silanol group in a hydrolysis-condensate of a hydrolysable silane having a hydrolysable silane containing in the molecule four hydrolysable groups, in a ratio of 50% by mole to 100% by mole relative to the total amount of silanes. The hydrolysable silane is represented by Formula (1): R1aSi(R2)4-a??Formula (1) and contains 50% by mole to 100% by mole of a hydrolysable silane in which a is 0 and 0% by mole to 50% by mole of a hydrolysable silane in which a is 1 or 2. The alcohol is propylene glycol monomethyl ether, propylene glycol monoethyl ether, or 3-methoxybutanol.Type: GrantFiled: October 2, 2017Date of Patent: September 10, 2024Assignee: NISSAN CHEMICAL CORPORATIONInventors: Hiroaki Yaguchi, Makoto Nakajima, Yuki Endo, Wataru Shibayama, Shuhei Shigaki
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Publication number: 20240295815Abstract: A silicon-containing resist underlayer film-forming composition for forming a resist underlayer film that exhibits excellent lithographic properties and achieves a high etching rate in a wet etching process. A silicon-containing resist underlayer film-forming composition including: [A] a polysiloxane containing a siloxane unit structure having at least two hydroxy groups; [B] nitric acid; and [C] a solvent.Type: ApplicationFiled: March 30, 2022Publication date: September 5, 2024Applicant: NISSAN CHEMICAL CORPORATIONInventors: Wataru SHIBAYAMA, Satoshi TAKEDA, Shuhei SHIGAKI, Kodai KATO
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Publication number: 20240295819Abstract: A composition for forming a silicon-containing resist underlayer film, the composition including: component [A]: a polysiloxane; and component [C]: a solvent, wherein the polysiloxane contains a constituent unit derived from a hydrolyzable silane (A) having an alkyl iodide group.Type: ApplicationFiled: June 10, 2022Publication date: September 5, 2024Applicant: NISSAN CHEMICAL CORPORATIONInventors: Satoshi TAKEDA, Kodai KATO, Wataru SHIBAYAMA, Shuhei SHIGAKI, Ken ISHIBASHI
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Publication number: 20240231230Abstract: A composition for forming a silicon-containing resist underlayer film, the composition containing: a component of a polysiloxane; a component of at least one selected from the group consisting of a sulfonic acid compound and an acid having a pKa from ?15.0 to 1.2; and a component of a solvent.Type: ApplicationFiled: April 27, 2022Publication date: July 11, 2024Applicant: NISSAN CHEMICAL CORPORATIONInventors: Wataru SHIBAYAMA, Satoshi TAKEDA, Shuhei SHIGAKI, Kodai KATO
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Publication number: 20240201593Abstract: A composition forms a silicon-containing underlayer film, the composition being for forming a silicon-containing resist underlayer film that enables formation of a good resist pattern without pattern collapse even when having a thinner thickness compared to conventional products, such as a thickness of 10 nm or less. The composition for forming a silicon-containing underlayer film contains: [A] a polysiloxane having a weight average molecular weight of 1,800 or less as determined by gel permeation chromatography (GPC) analysis in terms of polystyrene, and the amount of a component having a molecular weight of more than 2,500 is less than 20% in an integral molecular weight distribution curve prepared by gel permeation chromatography (GPC) analysis in terms of polystyrene; and [B] a solvent.Type: ApplicationFiled: March 30, 2022Publication date: June 20, 2024Applicant: NISSAN CHEMICAL CORPORATIONInventors: Satoshi TAKEDA, Wataru SHIBAYAMA, Shuhei SHIGAKI, Kodai KATO
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Publication number: 20240162086Abstract: A substrate with a thin film, including the thin film including a Si—R1 group of a compound represented by Formula (1), and the substrate including the thin film including the Si—R1 group, the thin film being disposed on a surface of the substrate, where in Formula (1), R1 represents a monovalent organic group that bonds to Si; R2 represents a monovalent organic group that bonds to Si; R3 represents an alkoxy group, an acyloxy group, or a halogen atom that bonds to Si; n represents an integer from 0 to 2; when n is 2, R2 may be the same or different; when n is 0 or 1, R3 may be the same or different; and when n is 1, R1 and R2 may bond together to form a ring structure. Si(R1)(R2)(R3)3-n??. . .Type: ApplicationFiled: February 21, 2022Publication date: May 16, 2024Applicant: NISSAN CHEMICAL CORPORATIONInventors: Wataru SHIBAYAMA, Satoshi TAKEDA, Shuhei SHIGAKI, Ken ISHIBASHI, Kodai KATO, Makoto NAKAJIMA, Rikimaru SAKAMOTO
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Patent number: 11966164Abstract: A method produces a semiconductor device, the method having a step of transferring an underlayer by employing a resist underlayer film-forming composition containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane in a non-alcoholic solvent in the presence of a strong acid, followed by a step (G) of removing the patterned resist film, the patterned resist underlayer film, and/or particles with a sulfuric acid-hydrogen peroxide mixture (SPM) prepared by mixing of aqueous hydrogen peroxide with sulfuric acid and/or an ammonia-hydrogen peroxide mixture (SC1) prepared by mixing of aqueous hydrogen peroxide with aqueous ammonia, wherein: the hydrolyzable silane contains a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) (wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond).Type: GrantFiled: October 24, 2018Date of Patent: April 23, 2024Assignee: NISSAN CHEMICAL CORPORATIONInventors: Wataru Shibayama, Hayato Hattori, Ken Ishibashi, Makoto Nakajima
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Publication number: 20240069441Abstract: A resist underlayer film-forming composition capable of reducing occurrence of defects caused by microparticles or the like that may be generated during formation of a coating film. A silicon-containing resist underlayer film-forming composition including: [A]a polysiloxane; [B] a glycol compound having a normal boiling point of 230.0° C. or higher and being of the following Formula (1): (wherein R1 and R2 are each independently a hydrogen atom, a C1-4 alkyl group, or a C3-4 acyl group; and n is an integer of 3 or more); and [C] a solvent (except for a compound corresponding to the compound [B]).Type: ApplicationFiled: November 26, 2021Publication date: February 29, 2024Applicant: NISSAN CHEMICAL CORPORATIONInventors: Satoshi TAKEDA, Wataru SHIBAYAMA, Shuhei SHIGAKI, Ken ISHIBASHI, Kodai KATO, Makoto NAKAJIMA
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Patent number: 11815815Abstract: Provided is a resist underlayer film-forming composition for forming resist underlayer film usable as hard mask and removable by wet etching process using chemical solution such as sulfuric acid/hydrogen peroxide. A resist underlayer film-forming composition for lithography includes a component (A) and component (B), the component (A) includes a hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, the hydrolyzable silane includes hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b) (where R1 is organic group of Formula (2): and is bonded to silicon atom through a Si—C bond; R3 is an alkoxy group, acyloxy group, or halogen group; is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3), and the component (B) is cross-linkable compound having ring structure having alkoxymethyl group or hydroxymethyl group, cross-linkable compound having epoxy group or blocked isocyanate group.Type: GrantFiled: November 6, 2015Date of Patent: November 14, 2023Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Hiroyuki Wakayama, Makoto Nakajima, Wataru Shibayama, Masahisa Endo
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Publication number: 20230176481Abstract: A composition for forming a film capable of effectively functioning as a resist underlayer film exhibiting resistance to a solvent in a composition for forming a resist film serving as an upper layer, favorable etching property to a fluorine-containing gas, and favorable lithographic property.Type: ApplicationFiled: March 31, 2021Publication date: June 8, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Wataru SHIBAYAMA, Satoshi TAKEDA, Shuhei SHIGAKI, Ken ISHIBASHI, Kodai KATO, Makoto NAKAJIMA
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Publication number: 20230168582Abstract: R1aR2bSi(R3)4?(a+b) ??(1) A composition for a silicon-containing resist underlying film and for forming a resist underlying film that can be removed by a conventional method employing dry etching, but also by a method employing wet etching using a chemical liquid in a step for processing a semiconductor substrate or the like; and a composition for forming a resist underlying film for lithography and for forming a resist underlying film that has excellent storage stability and produces less residue in a dry etching step. A composition for forming a resist underlying film, the composition including a hydrolysis condensate of a hydrolysable silane mixture containing an alkyltrialkoxy silane and a hydrolysable silane of formula (1), wherein the contained amount of the alkyltrialkoxy silane in the mixture is 0 mol % or more but less than 40 mol % with respect to the total amount by mole of all of the hydrolysable silane contained in the mixture.Type: ApplicationFiled: April 30, 2021Publication date: June 1, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Shuhei SHIGAKI, Ken ISHIBASHI, Wataru SHIBAYAMA
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Publication number: 20230152699Abstract: A film-forming composition for forming a resist underlayer film for a solvent development type resist that is capable of forming a good resist pattern which contains a hydrolysis-condensation product of a hydrolyzable silane compound, at least one substance that is selected from the group consisting of an aminoplast crosslinking agent and a phenoplast crosslinking agent, and a solvent, and wherein the hydrolyzable silane compound contains a hydrolyzable silane represented by formula (1).Type: ApplicationFiled: March 31, 2021Publication date: May 18, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Kodai KATO, Satoshi TAKEDA, Shuhei SHIGAKI, Wataru SHIBAYAMA, Makoto NAKAJIMA
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Publication number: 20230152700Abstract: A film-forming composition includes a solvent and hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane compound by using an acidic compound containing two or more acidic groups. The hydrolyzable silane compound contains an amino-group-containing silane with formula (1). R1 is an organic group containing an amino group. R2 is a substitutable alkyl, substitutable aryl, substitutable aralkyl, substitutable halogenated alkyl, substitutable halogenated aryl, substitutable halogenated aralkyl, substitutable alkoxyalkyl, substitutable alkoxyaryl, substitutable alkoxyaralkyl, or substitutable alkenyl group, or an organic group containing an epoxy, acryloyl, methacryloyl, mercapto, or a cyano group. R3 is an alkoxy, aralkyloxy, or acyloxy group or halogen atom. a is an integer of 1 or 2, b of 0 or 1; and a and b satisfy a relation of a+b?2.Type: ApplicationFiled: March 31, 2021Publication date: May 18, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Wataru SHIBAYAMA, Satoshi TAKEDA, Shuhei SHIGAKI, Ken ISHIBASHI, Kodai KATO, Makoto NAKAJIMA
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Publication number: 20230125270Abstract: A compound of Formula (5-1) or Formula (5-3): where R17 and R21 are each an ethyl group; R22 and R23 are each a methyl group; and R16 and R20 are each a methoxy group.Type: ApplicationFiled: December 13, 2022Publication date: April 27, 2023Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Makoto NAKAJIMA, Kenji TAKASE, Satoshi TAKEDA, Wataru SHIBAYAMA
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Publication number: 20230112897Abstract: A method for producing a coated substrate includes applying a photocurable silicon-containing coating film-forming composition to an uneven substrate; and exposing the photocurable silicon-containing coating film-forming composition to light, wherein the photocurable silicon-containing coating film-forming composition comprises a hydrolyzable silane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the hydrolyzable silane is a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) wherein R1 is a functional group relating to photocrosslinking; R2 is an alkyl group and is bonded to a silicon atom via an Si—C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3.Type: ApplicationFiled: December 8, 2022Publication date: April 13, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Wataru SHIBAYAMA, Hikaru TOKUNAGA, Ken ISHIBASHI, Keisuke HASHIMOTO, Makoto NAKAJIMA
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Patent number: 11561472Abstract: A radiation sensitive composition including a siloxane polymer exhibiting phenoplast crosslinking reactivity as a base resin, which is excellent in resolution and can be used as a radiation sensitive composition capable of allowing a pattern having a desired-shape to be formed with sufficient precision. A radiation sensitive composition including as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof; and a photoacid generator, in which the hydrolyzable silane includes hydrolyzable silanes of Formula (1) R1aR2bSi(R3)4-(a+b)??Formula (1) wherein R1 is an organic group of Formula (1-2) and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R3 is a hydrolyzable group; and Formula (2) R7cR8dSi(R9)4-(c+d)??Formula (2) wherein R7 is an organic group of Formula (2-1) and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R9 is a hydrolyzable group.Type: GrantFiled: June 7, 2016Date of Patent: January 24, 2023Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Makoto Nakajima, Kenji Takase, Satoshi Takeda, Wataru Shibayama