Abstract: An image capturing lens assembly includes, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, and a sixth lens element. The first lens element with negative refractive power has an image-side surface being concave in a paraxial region thereof. The second and third lens elements have refractive power. The fourth lens element has positive refractive power. The fifth lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof. The sixth lens element with refractive power has an object-side surface being convex in a paraxial region thereof and an image-side surface being concave in a paraxial region thereof. The image capturing lens assembly has a total of six lens elements with refractive power.

Abstract: The invention provides a method for preparing pyrrolidone, and the invention provides a method for catalytically preparing pyrrolidone with ?-aminobutyric acid in the presence of carnitine-CoA ligase CaiC. The carnitine-CoA ligase CaiC has an amino acid sequence as shown in SEQ ID NO:1. The ligase has catalytic activity in the cyclization of ?-aminobutyric acid to produce pyrrolidone. The carnitine-CoA ligase provided in the present invention affords a yield of pyrrolidone of 3.26 g/L and a molar yield of 39.53% in 24 h when ?-aminobutyric acid is used as a substrate, thus reducing the production period, improving the production of pyrrolidone, and accelerating the industrialization process of producing pyrrolidone by enzymatic conversion method.

Abstract: Embodiments of this specification provide distributed data processing methods, apparatuses, and devices. One method includes: determining an active vertex set that currently participates in data processing in target graph data, in response to determining that an external memory of a first distributed node stores an active vertex in the active vertex set, determining, from a plurality of predetermined data processing modes, a target data processing mode that matches the active vertex set, determining, based on the target data processing mode, a to-be-updated vertex according to the association relationship with the active vertex, and sending, based on first data of the active vertex in the external memory, a first update message to a target distributed node in which the to-be-updated vertex is located.

Abstract: An optical device and the prism module thereof are provided. The prism module includes a first prism, a second prism, and a third prism. The second prism is disposed beside the first prism. The third prism is adhered to the second prism. First light enters the first prism, is reflected plural times in the first prism, enters the second prism, and is emitted from the second prism. Second light enters the second prism, is reflected plural times in the second prism, and is emitted from the second prism. Third light sequentially passes through the third prism and the second prism, enters the first prism, is reflected plural times in the first prism, and is emitted from the first prism.

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A back-end energy storage isolation fly-back conversion apparatus (10) includes a return switch (Q1), a driving switch (Q2), an energy storage capacitor (Cs), a transformer (Ti), a resonant inductor (Lr), a first rectifier (104), an output capacitor (Cout), and a controller (116). The transformer (T1) includes a primary-side winding (Lm) and a secondary-side first winding (102). The return switch (Q1) is turned on by the controller (116), so that the energy storage capacitor (Cs) is charged by a primary-side current (I1) flowing through the resonant inductor (Lr), the primary-side winding (Lm), and the return switch (Q1), and the secondary-side first winding (102) is powered by the primary-side current (I1). When the primary-side current (I1) becomes negative, the energy storage capacitor (Cs) discharges through the return switch (Q1) and the primary-side winding (Lm) and continuously supplies power to the secondary-side first winding (102).

Abstract: A thermally conductive board includes a first metal layer, a second metal layer, and a thermally conductive layer. The material of the first metal layer includes copper, and the first metal layer has a first top surface and a first bottom surface opposite to the first top surface. A first metal coating layer covers the first bottom surface. The material of the second metal layer includes copper, and the second metal layer has a second top surface and a second bottom surface opposite to the second top surface. A second metal coating layer covers the second top surface and faces the first metal coating layer. The thermally conductive layer is an electrically insulator laminated between the first metal coating layer and the second metal coating layer.

Abstract: Systems and techniques are provided for integrating laboratory generated nuclear magnetic resonance (NMR) data and NMR logging data. An example method can include obtaining NMR logging data describing one or more downhole NMR measurements captured during a drilling operation in a borehole; modifying the NMR logging data to be compatible with a temperature correction algorithm, yielding modified NMR logging data, the temperature correction algorithm having been determined based on laboratory generated NMR data; and applying the temperature correction algorithm to the modified NMR logging data, yielding temperature corrected NMR logging data.

Abstract: The present disclosure relates to systems and methods for coding. The methods may include receiving at least two contexts, for each of the at least two contexts, obtaining at least one coding parameter corresponding to the context from at least one lookup table, determining a probability interval value corresponding to the context based on a previous probability interval value and the at least one coding parameter, determining a normalized probability interval value corresponding to the context by performing a normalization operation on the probability interval value, determining a probability interval lower limit corresponding to the context based on a previous probability interval lower limit and the at least one coding parameter, determining a normalized probability interval lower limit corresponding to the context by performing the normalization operation on the probability interval lower limit, and outputting at least one byte based on the normalized probability interval lower limit.

Abstract: An electronic device includes a flexible substrate and a conductive wire. The conductive wire is disposed on the flexible substrate and includes a metal portion and a plurality of openings disposed in the metal portion. The metal portion includes a plurality of extending portions and a plurality of joint portions, and each of the openings is surrounded by two of the plurality of extending portions and two of the plurality of joint portions. A ratio of a sum of widths of the plurality of extending portions to a sum of widths of the plurality of joint portions is in a range from 0.8 to 1.2.

Abstract: A memory device includes a source element, a drain element, channel layers, control electrode layers, and a memory layer. The channel layers are individually electrically connected between the source element and the drain element. Memory cells are defined in the memory layer between the control electrode layers and the channel layers.

Abstract: An advice providing apparatus for a vehicle including: a first interface configured to communicate with one or more human-machine interface APPs of one or more human-machine interfaces (HMIs) of the vehicle; a second interface configured to receive data from in-vehicle devices including a database, a sensing unit and a communication unit; and a processing module configured to: calculate one or more predictions for a potential query from a user of the vehicle based on the received data; select a prediction from the calculated predictions that is associated with a nonrepresentational input received via at least one HMI of the one or more HMIs from the user; generate an operation advice based on the selected prediction; and output the generated operation advice to an HMI APP of the one or more HMI APPs.

Abstract: A Fan-Out package having a main die and a dummy die side-by-side is provided. A molding material is formed along sidewalls of the main die and the dummy die, and a redistribution layer having a plurality of vias and conductive lines is positioned over the main die and the dummy die, where the plurality of vias and the conductive lines are electrically connected to connectors of the main die.

Abstract: A memory device, includes a memory array for storing a plurality of vector data each of which has an MSB vector and a LSB vector. The memory array includes a plurality of memory units each of which has a first bit and a second bit. The first bit is used to store the MSB vector of each vector data, the second bit is used to store the LSB vector of each vector data. A bit line corresponding to each vector data executes one time of bit-line-setup, and reads the MSB vector and the LSB vector of each vector data according to the bit line. The threshold voltage distribution of each memory unit is divided into N states, where N is a positive integer and N is less than 2 to the power of 2, and the effective bit number stored by each memory unit is less than 2.

Abstract: Disclosed in some examples are methods, systems, devices, and machine-readable mediums which provide for sidebar communication threads forked from, or related to, a principal thread. Messages in the sidebar communication thread may include a history of the principal thread, including one or more messages from the principal thread, and may include a proposed principal thread message that is the subject of the sidebar thread discussion. The sidebar thread may also include sidebar thread messages that carries the conversation of the sidebar thread participants. Once a termination condition is reached for the sidebar thread, the sidebar thread terminates and either the proposed principal thread message (as potentially modified by participants of the sidebar thread) becomes an accepted principal thread message and it is posted to the principal thread as if it was sent by the sidebar initiator or no message is posted (e.g., the proposed principal thread message is rejected).

Abstract: A semiconductor structure includes a buffer layer, a channel layer, a barrier layer, a doped compound semiconductor layer, and a composition gradient layer. The buffer layer is disposed on a substrate, the channel layer is disposed on the buffer layer, the barrier layer is disposed on the channel layer, the doped compound semiconductor layer is disposed on the barrier layer, and the composition gradient layer is disposed between the barrier layer and the doped compound semiconductor layer. The barrier layer and the composition gradient layer include a same group III element and a same group V element, and the atomic percentage of the same group III element in the composition gradient layer is gradually increased in the direction from the barrier layer to the doped compound semiconductor layer. A high electron mobility transistor and a fabrication method thereof are also provided.

Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.

Abstract: An integrated circuit includes a first-voltage power rail and a second-voltage power rail in a first connection layer, and includes a first-voltage underlayer power rail and a second-voltage underlayer power rail below the first connection layer. Each of the first-voltage and second-voltage power rails extends in a second direction that is perpendicular to a first direction. Each of the first-voltage and second-voltage underlayer power rails extends in the first direction. The integrated circuit includes a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail, and a second via-connector connecting the second-voltage power rail with the second-voltage underlayer power rail.

Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.