Abstract: Presented are systems and methods for coverage enhancement in non-terrestrial networks (NTN). A wireless communication device may determine a set of one or more resources to use for indicating information for physical uplink control channel (PUCCH) repetition of msg4 hybrid automatic repeat request acknowledgement (HARQ-ACK) transmission. The wireless communication device may send a msg1 transmission using the set of one or more resources, to indicate the information for the PUCCH repetition, to a wireless communication node.

Abstract: To increase endurance of non-volatile semiconductor memory, it is proposed to program N bits of data across M non-volatile memory cells, where M>N, with an encoding scheme that allows for programming M non-volatile memory cells multiple times without performing an intervening erase process.

Abstract: A non-volatile storage apparatus continuously maintains unselected word lines for multiple regions in multiple blocks at one or more overdrive voltages and continuously maintains unselected select lines for multiple regions in multiple blocks at one or more unselected voltages while performing a read process for non-volatile memory cells in one or more regions of one or more blocks of the same die, without lowering those signals to ground or another resting voltage. Selected word lines are separately temporarily toggled to a read reference voltage to enable reading and then reverted back to an overdrive voltage upon completion of the reading. Selected select lines are separately temporarily toggled to a select voltage to enable reading and then reverted back to an unselected voltage upon completion of the reading.

Abstract: A memory device that has a memory block with a plurality of word lines is provided. The memory device also includes circuitry that is configured to read data in a selected word line. The circuitry sets a reference voltage at a reduced voltage that is less than a default voltage and applies the reference voltage to the selected word line and performs a first read operation on the selected word line. In response to the first read operation passing, the circuitry is outputs data to a user. In response to the first read operation not passing, the circuitry sets the reference voltage at the default voltage and applies the reference voltage to the selected word line of the plurality of word lines and performs a second read operation on the selected word line.

Abstract: Method, device and computer program product for wireless communication are provided. A method includes: performing, by a network node, a sensing operation to acquire a sensing result of the sensing operation; and transmitting, by the network node to a wireless communication node, the sensing result or information of one or more actions corresponding to the sensing result.

Abstract: In some embodiments, a rotary support structure comprises an upper connecting plate, a lower connecting plate, a stationary disc, a movable disc, an outer ring friction member, and an inner ring friction member. The upper connecting plate is rotatable relative to the lower connecting plate about a central axis of a seat frame and is connected to the seat frame via a third fastener. The stationary and movable discs are between the upper and lower connecting plates. The stationary disc connects to the lower connecting plate via a second fastener, and the movable disc connects to the upper connecting plate via a first fastener. The outer ring friction member is clamped between the upper connecting plate and an outer edge of the stationary disc, while the inner ring friction member is clamped between an inner edge of the stationary disc and an outer edge of the movable disc.

Abstract: A system having high bandwidth non-volatile memory, such as NAND. The system senses the combined current of multiple memory cells and then determines a bit value for each cell based on the magnitude of the combined current. The system applies a reference voltage to multiple memory cells with one memory cell per NAND string and then senses a combined current of the multiple memory cells in response to the reference voltage. The system then determines a bit value of each of the multiple memory cells based on a magnitude of the combined current.

Abstract: The memory device includes a memory block with an array of memory cells that are arranged in a plurality of word lines. The memory cells are programmed to one bit per memory cell with each memory cell being either in an erased data state or a programmed data state. The memory device also includes circuitry that is configured to determine that the memory cells have experienced significant read disturb. Without erasing the memory cells, the circuitry is further configured to program the memory cells in the programmed data state directly to higher threshold voltages to increase a threshold voltage margin between the memory cells in the erased data state and the memory cells in the programmed data state.

Abstract: The present application relates to an adhesive applying apparatus, an adhesive applying method and a battery processing device. The adhesive applying apparatus includes a workbench, an adhesive applying mechanism, a detection assembly, and a visual compensation module. The detection assembly can detect to obtain current positions of a battery cell and adhesive paper respectively. The visual compensation module can obtain a total deviation value based on a deviation value between the current position of the battery cell and its target position and a deviation value between the current position of the adhesive paper and its target position, and then correct an adhesive applying position of the adhesive applying mechanism based on the total deviation value, so that the adhesive applying mechanism can apply adhesive on the battery cell at the corrected adhesive applying position, thereby effectively improving precision of adhesive applying for the battery cell.

Abstract: This patent document describes, among other things, techniques, and apparatuses for providing non-terrestrial network connectivity to improve wireless network efficiency and performance. In one aspect, a method of wireless communication is disclosed. The method includes transmitting, from a network node to a user device, a block of system information that includes system information that is time varying due to at least one of movement of the network node or movement of the user device.

Abstract: The memory device includes a plurality of programmed memory blocks containing data and at least one spare memory block that does not contain data. The memory device also includes control circuitry that is configured to perform a plurality of read operations on the programmed memory blocks. Without having reprogrammed the memory cells of any of the plurality of programmed memory blocks, the circuitry is configured to detect a trigger event. In response to detecting the trigger event, the circuitry is configured to relocate data from a selected memory block of the plurality of programmed memory blocks to the at least one spare memory block so that the at least one spare memory block becomes a programmed memory block and then erase the selected memory block so that the selected memory block becomes a new spare memory block.

Abstract: To increase the speed of programming, a non-volatile memory system programs some word lines using a two pass programming process and other word lines using a one pass programming process.

Abstract: Technology for NAND memory cells having a large sub-threshold swing for in-memory compute. A NAND memory structure has alternating conductive layers and insulating layers. NAND strings extend perpendicularly through the alternating conducting layers and insulating layers. The NAND strings may be formed in memory holes that contain an insulating core, a channel, a tunnelling layer, a charge trap layer, and a blocking layer. The diameter of the insulating core and the combined thickness of the tunnelling layer, charge trap layer, and blocking layer may be sized to achieve a large sub-threshold swing in the NAND memory cells. To further improve the number of current based data states that can be stored, a ground core structure within the insulating core can introduced along with memory cells with an increased channel length, such as by increasing the relative thickness of the word line layers or shorting together multiple word lines.

Abstract: The memory device includes a memory block with at least one drain-side select gate and an array of memory cells that are arranged in a plurality of word lines. The memory device also includes circuitry that is configured to program the memory cells of a selected word line in a programming operation. In a programming pulse, the circuitry is configured to apply a select gate voltage VSGD to the at least one drain-side select gate, apply a bit line inhibit voltage VDDSA to a plurality of unselected bit lines, apply a very low voltage to a plurality of selected bit lines, and apply a programming voltage to a selected word line of the plurality of word lines. The bit line inhibit voltage VDDSA is no greater than 1.5 V.

Abstract: A memory device is provided that includes a memory block with an array of memory cells that are arranged in word lines, including a selected word line that is programmed according to a storage scheme that has at least three data states. The memory device further includes circuitry for reading the data of the selected word line. During a sensing operation, for a set duration, the circuitry discharges a sensing capacitor through a selected NAND string that includes a selected memory cell to be read. After discharging the sensing capacitor for the set duration, the circuitry conducts a first comparison of a voltage at a sense node to a trip voltage. The circuitry is further applies a first voltage to an opposite side of the sensing capacitor from the sense node and then conducts a second comparison of the voltage at the sense node to the trip voltage.

Abstract: Technology for NAND memory cells having a large sub-threshold swing for in-memory compute. A NAND memory structure has alternating conductive layers and insulating layers. NAND strings extend perpendicularly through the alternating conducting layers and insulating layers. The NAND strings may be formed in memory holes that contain an insulating core, a channel, a tunnelling layer, a charge trap layer, and a blocking layer. The diameter of the insulating core and the combined thickness of the tunnelling layer, charge trap layer, and blocking layer may be sized to achieve a large sub-threshold swing in the NAND memory cells.

Abstract: The present invention relates to an indole carboxamide compound, preparation therefor and use thereof. The indole carboxamide is represented by the following general formula (I). The compound of the present invention is more stable and active and can be used for prophylaxis or treatment of nephropathy, sepsis, arthritis, pulmonary hypertension or tumor.

Abstract: Techniques are described to indicate characteristics (e.g., configuration related control information and/or scheduling related control information) of signals forwarded by a smart node to a base station (BS) and/or to a user equipment (UE). An example wireless communication method includes receiving, by a first network node from a second network node, a configuration information that configures the first network node, and transmitting, by the first network node to a communication node or to the second network node, a first signal comprising a first information according to the configuration information, where, prior to the transmitting, the first network node receives from the second network node or from the communication node a second signal comprising a second information that includes the first information.

Abstract: Provided are bispecific antibodies capable of binding to human VEGF protein and human PD-1 protein. These bispecific antibodies are effective in treating cancer.

Abstract: Systems, methods and apparatus for achieving a synchronization between a wireless device and a network device are described. One example method includes transmitting, by the wireless device to the network device, a first message indicating a property of a validity timer associated with a synchronization information determined by the wireless device.