Abstract: A double-sided LED has a double-sided light emitting structure formed by electroplating or electrocasting without the need for wire bonding. The double-sided light emitting gives the chip a light-emitting angle of 150 degrees or higher. In addition, the device has good light extraction and heat dissipation characteristics.

Abstract: A package support including: metal frames connected together; one or more dielectric materials disposed in an inner gap of the metal frames; wherein: the package support has a frame region and a function region; wherein the function region has complete upper and lower surfaces configured to prevent leakage if at least one of the entire upper or lower surfaces is covered with an encapsulant material. A fabrication method allows for manufacturing the package support with a high cell density, relatively low price, high reflectivity, good heat dissipation, and high reliability. The LED package using the package support has a smaller size and improved dissipation properties.

Abstract: A method of semiconductor device fabrication including forming a mandrel on a semiconductor substrate is provided. The method continues to include oxidizing a region the mandrel to form an oxidized region, wherein the oxidized region abuts a sidewall of the mandrel. The mandrel is then removed from the semiconductor substrate. After removing the mandrel, the oxidized region is used to pattern an underlying layer formed on the semiconductor substrate.

Abstract: A device receives traffic; identifies an address associated with the traffic; determines whether the address is associated with an aggregate interface, the aggregate interface being associated with a first port and a second port. The first port corresponds to a first node in a first state, that indicates that the first node is available to forward the traffic, and the second port corresponds to a second node in a second state, that indicates that that the second node is not available to forward the traffic. The device transmits the traffic to the first node via the first port and to the second node, via the second port, when the address is associated with the aggregate interface. Transmitting the traffic enables the second node to forward the traffic when the first node changes from the first state to the second state.

Abstract: An electrode structure for effectively improving the stability of a semiconductor LED includes a reflecting layer capable of current spreading. In such an electrode structure, the current injects from the side surface of the reflecting layer to form a certain potential gradient over the contact surface between the electrode and the LED contact surface, thereby inhibiting the metal ion of the reflecting layer from migration due to electric field during usage, thereby improving device stability. In addition, the electrode portion for current injection can include a high-reflectivity material yet not vulnerable to ion migration, thereby increasing the entire reflecting area and improving luminous efficiency.

Abstract: A system and method for providing a network proxy layer are disclosed. The network proxy layer may receive a connection establishment event for a client connection of an application session and send the client connection event to an application proxy for the application session, the application proxy being associated with an application of a server. Upon establishment of the client connection, the network proxy layer may receive one or more data packets from the client connection. The network proxy layer may further receive a connection establishment event for a server connection of the application session of the server, and receive one or more data packets from the server connection.

Abstract: A method and related apparatus for restraining erroneous image colors are provided for correcting pixel values of three sequential image fields of a video data while de-interlacing the video data. The method is utilized to correct the video data by detecting whether penetrations from luminance signals into chrominance signals or penetrations from chrominance signals into luminance signals occur in the video data. In embodiments of the present invention, the pixel chrominance signals of image fields with the same polarity are utilized to correct the pixel chrominance signals of another image field. Pattern matching and edge detection are utilized to determine whether penetrations from chrominance signals into luminance signals occur.

Abstract: The present disclosure provides a method of semiconductor device fabrication including forming a mandrel on a semiconductor substrate is provided. The method continues to include oxidizing a region the mandrel to form an oxidized region, wherein the oxidized region abuts a sidewall of the mandrel. The mandrel is then removed from the semiconductor substrate. After removing the mandrel, the oxidized region is used to pattern an underlying layer formed on the semiconductor substrate.

Abstract: This disclosure is directed toward an integrated switching and routing security device that provides zone-based security directly between layer two (L2) interfaces of L2 bridge domains and/or layer three (L3) interfaces of L3 routing instances within the security device. The integrated switching and routing security device supports both switching and routing functionalities for packets on L2 and L3 interfaces, and supports security within and between L2 bridge domains and L3 routing instances. The integrated switching and routing security device configures L2 security zones for one or more L2 interfaces and configures L3 security zones for one or more L3 interfaces. The integrated switching and routing security device then applies security policies to incoming packets according to the L2 security zones and/or the L3 security zones associated with the incoming interface and an outgoing interface for the packets to provide end-to-end security within the security device.

Abstract: A vertical LED with current blocking structure and its associated fabrication method involve an anisotropic conductive material and a conductive substrate with concave-convex structure. The anisotropic conductive material forms a bonding layer with vertical conduction and horizontal insulation between the concave-convex substrate and the light-emitting epitaxial layer, thereby forming a vertical LED with current blocking function.

Abstract: A scanner is disclosed. The scanner has a scan sensor with a width smaller than the width of the platen. The scanner scans a first pass of the platen with the scan sensor in a first position on one side of the platen. The scanner then moves the scan sensor to the other side of the platen and does a second pass.

Abstract: An apparatus, method and computer program product for presenting burst images are provided. The apparatus may include a processor that may be configured to receive a plurality of burst images. Each burst image may differ from the other burst images based on a variable parameter. The processor may also be configured to provide for a presentation of a sample burst image. In this regard, the sample burst image may be one of the plurality of burst images. The processor may be further configured to receive a selected location within the presentation of the sample burst image and provide for a presentation of a plurality of burst image fragments associated with each of the plurality of burst images. In this regard, the burst image fragments may be portions of each of the burst images, where the areas of each burst image may be determined based on the selected location.

Abstract: A light emitting diode structure includes a patterned substrate, an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer. Plural protruding portions are formed on a surface of the substrate. A horizontal projection of each of the protruding portions on the surface of the substrate has a projection width W1. An interval width W2 is formed between every two adjacent protruding portions. A vertical height h is formed between a peak of each of the protruding portions and the horizontal surface of the surface of the substrate. The value of {[(W1)/2+W2]/h} is substantially equal to tan 46°. The N-type semiconductor layer is located on the substrate and covers the protruding portions. The light emitting layer is located on the N-type semiconductor layer. The P-type semiconductor layer is located on the light emitting layer.

Abstract: An image scanner includes a main body and a lid. The main body includes a scan window. The scan window is covered by the lid when the lid is closed and is exposed when the lid is open. A lid position detector detects whether the lid is open or closed.

Abstract: An electronic device assembly includes an electronic device, a rotatable member rotatably attached to the electronic device about a first shaft, and a peripheral device rotatably attached to the rotatable member about a second shaft. The rotatable member and the peripheral device are located on a front side of the electronic device. The peripheral device is rotatable about the second shaft relative to the rotatable member, for allowing the rotatable member and the peripheral device to be located on a same plane. The rotatable member is rotatable about the first shaft relative to the electronic device, for allowing the rotatable member and the peripheral device to be cooperatively attached to a back side of the electronic device.

Abstract: A low-temperature device for separating and purifying gas based on a small-sized low-temperature refrigerating machine includes a primary, secondary and quaternary heat exchanger, at least one small-sized low-temperature refrigerating machine, and at least one liquid collecting tank. The small-sized low-temperature refrigerating machine includes a first cold head and a second cold head, the secondary heat exchanger is provided on the first cold head to form a primary cold head heat exchanger, the quaternary heat exchanger is provided on the second cold head to form a secondary cold head heat exchanger, a mixed gas outlet is connected to an inlet of the primary cold head heat exchanger. By using primary and secondary cold heads of the small-sized low-temperature refrigerating machine as cold sources, gases having different condensing temperature are liquefied and solidified separately, and two or more gases can be separated and purified at a lower cost.

Abstract: A thin film transistor array substrate includes a substrate, a plurality of poly-silicon islands and a plurality of gates. The substrate has a display region, a gate driver region and a source driver region. Each poly-silicon island disposed on the substrate has a source region, a drain region and a channel region disposed therebetween. The poly-silicon islands include several first poly-silicon islands and several second poly-silicon islands. The first poly-silicon islands having main grain boundaries and sub grain boundaries are only disposed within the display region and the gate driver region. The main grain boundaries of the first poly-silicon islands are only disposed within the source regions and/or the drain regions. The second poly-silicon islands are disposed in the source driver region. Grain sizes of the first poly-silicon islands are substantially different from those of the second poly-silicon islands. Gates corresponding to the channel regions are disposed on the substrate.

Abstract: The present invention provides a method and apparatus for de-interlacing video data by using a horizontal motion vector of a horizontal motion between fields. The horizontal motion regarding a target pixel of a frame is compensated if the horizontal motion vector is found to be substantially not null according to the pixels residing in the fields determined by the horizontal motion vector. This results in an upgraded quality of image after the de-interlacing process.

Abstract: A thin film transistor array substrate includes a substrate, a plurality of poly-silicon islands and a plurality of gates. The substrate has a display region, a gate driver region and a source driver region. Each poly-silicon island disposed on the substrate has a source region, a drain region and a channel region disposed therebetween. The poly-silicon islands include several first poly-silicon islands and several second poly-silicon islands. The first poly-silicon islands having main grain boundaries and sub grain boundaries are only disposed within the display region and the gate driver region. The main grain boundaries of the first poly-silicon islands are only disposed within the source regions and/or the drain regions. The second poly-silicon islands are disposed in the source driver region. Grain sizes of the first poly-silicon islands are substantially different from those of the second poly-silicon islands. Gates corresponding to the channel regions are disposed on the substrate.

Abstract: A light-weight resilient mechanism is used to synchronize server secure keying data with member devices in a highly-scalable distributed group virtual private network (VPN). A server device generates an initial secure keying data set, for the VPN, that includes a first version identifier, and sends, to member devices and via point-to-point messages, the secure keying data set. The server device sends, to the member devices, heartbeat push messages including the first version identifier. The server device generates an updated secure keying data set with a second version identifier and sends, to the member devices, a key push message that includes the updated data set. The server device sends, to the member devices, heartbeat push messages including the second version identifier. Member devices may use the first and second version identifiers to confirm that secure keying data sets are current and quickly identify if updates are missed.