Abstract: A method for fabricating a semiconductor device includes the steps of providing a substrate having a medium-voltage (MV) region and a low-voltage (LV) region, forming fin-shaped structures on the LV region, forming an insulating layer between the fin-shaped structures, forming a hard mask on the LV region, and then performing a thermal oxidation process to form a gate dielectric layer on the MV region. Preferably, a hump is formed on the substrate surface of the MV region after the hard mask is removed, in which the hump further includes a first hump adjacent to one side of the substrate on the MV region and a second hump adjacent to another side of the substrate on the MV region.

Abstract: A middle voltage transistor with a fin structure includes a substrate. A fin structure protrudes from a surface of the substrate. A gate structure crosses the fin structure. A source is disposed at one side of the gate structure and embedded in the fin structure, and a drain is disposed at the other side of the gate structure and embedded in the fin structure. A second deep trench isolation is embedded in the substrate and adjacent to the source and drain. An isolation structure is embedded in the fin structure below the gate structure. The isolation structure includes a first deep trench isolation and a first shallow trench isolation extending from a sidewall of the first deep trench isolation toward the source.

Abstract: A semiconductor device includes a substrate having a first planar region, a second planar region adjacent to the first planar region, a non-planar region between the first planar region and the second planar region, a first base on the first planar region, a second base on the second planar region, and a plurality of bumps on the non-planar region. Preferably, the bumps have different heights, top surfaces of the first base and the second base are coplanar, the top surface of the bumps is lower than the top surface of the first base, and the height of the bumps closer to the first planar region is greater than the height of the bumps closer to the non-planar region.

Abstract: The invention provides a semiconductor structure, which comprises a middle/high voltage device region and a low voltage device region, a plurality of fin structures disposed in the low voltage device region, and a protruding part located at a boundary Between the middle/high voltage device region and the low voltage device region. A top surface of the protruding part is flat, and the top surface of the protruding part is aligned with a flat top surface of the middle/high voltage device region.

Abstract: A method for fabricating a semiconductor device includes the steps of providing a substrate having a medium-voltage (MV) region and a low-voltage (LV) region, forming fin-shaped structures on the LV region, forming an insulating layer between the fin-shaped structures, forming a hard mask on the LV region, and then performing a thermal oxidation process to form a gate dielectric layer on the MV region. Preferably, a hump is formed on the substrate surface of the MV region after the hard mask is removed, in which the hump further includes a first hump adjacent to one side of the substrate on the MV region and a second hump adjacent to another side of the substrate on the MV region.

Abstract: A semiconductor device includes a substrate with a high voltage region and a low voltage region. A first deep trench isolation is disposed within the high voltage region. The first deep trench isolation includes a first deep trench and a first insulating layer filling the first deep trench. The first deep trench includes a first sidewall and a second sidewall facing the first sidewall. The first sidewall is formed by a first plane and a second plane. The edge of the first plane connects to the edge of the second plane. The slope of the first plane is different from the slope of the second plane.

Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having an active region as the substrate includes a medium-voltage (MV) region and a low-voltage (LV) region, forming a first divot adjacent to one side of the active region, forming a second divot adjacent to another side of the active region, forming a first liner in the first divot and the second divot and on the substrate of the MV region and LV region, forming a second liner on the first liner, and then removing the second liner, the first liner, and the substrate on the LV region for forming a fin-shaped structure.

Abstract: A holder for mobile device includes a holding structure and a mounting structure. The holding structure includes a holding member and a supporting member coupled to the holding member. The holding member is configured to hold the mobile device. The mounting structure includes a mounting structure, a latching assembly and a sliding support coupled to the latching assembly. The mounting structure defines a compartment. The sliding support is slidably engaged with in the compartment and transitionable between: an enclosed configuration in which the sliding support is received in the compartment to allow the latching assembly to be received in the compartment; and an exposed configuration in which the sliding support and the latching assembly are exposed to outside of the compartment to allow the latching assembly to detachably latch with the supporting member.

Abstract: A holder for mobile device includes a holding structure and a mounting structure. The holding structure includes a holding member and a supporting member coupled to the holding member. The holding member is configured to hold the mobile device. The mounting structure includes a mounting structure, a latching assembly and a sliding support coupled to the latching assembly. The mounting structure defines a compartment. The sliding support is slidably engaged with in the compartment and transitionable between: an enclosed configuration in which the sliding support is received in the compartment to allow the latching assembly to be received in the compartment; and an exposed configuration in which the sliding support and the latching assembly are exposed to outside of the compartment to allow the latching assembly to detachably latch with the supporting member.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region defined thereon; forming a gate structure on the first region, in which the gate structure comprises a first hard mask and a second hard mask thereon; forming a first mask layer on the first region and the second region; removing part of the first mask layer; removing the second hard mask; forming a second mask layer on the first region and the second region; removing part of the second mask layer; and removing the first hard mask.

Abstract: A method for manufacturing semiconductor devices includes providing a substrate having a first region and a second region defined thereon, and a shallow trench isolation (STI) formed in between the first region and the second region, the first region comprising a first gate structure and the second region comprising a second gate structure respectively formed therein; forming a patterned protecting layer covering at least the entire STI and the second region on the substrate; forming recesses not exposing the STI in the substrate respectively at two sides of the first gate structure; and forming an epitaxial layer in the recesses respectively, the epitaxial layer filling up the recesses.

Abstract: A method for managing a network appliance includes establishing a management Internet protocol (IP) address for the network appliance, receiving a domain name service (DNS) query from a local computer at the network appliance containing a predetermined domain name corresponded to the management IP address, sending the management IP address to the local computer subsequent to receiving the DNS query containing the predetermined domain name, and receiving a connection from the local computer at the network appliance using the management IP address for managing the network appliance.

Abstract: A tail mirror for an automobile includes a mirror holder having a holder pivot portion, a mounting base having a base pivot portion, an adjustment seat disposed between the holder and base pivot portions, and first and second adjusters. The first adjuster connects the adjustment seat to the holder pivot portion, the holder pivot portion being rotatable relative to the adjustment seat about a first pivot axis, the first adjuster being operable to limit or permit rotational movement of the holder pivot portion. The second adjuster connects the adjustment seat to the base pivot portion, the base pivot portion being rotatable relative to the adjustment seat about a second pivot axis which is substantially perpendicular to the first pivot axis, the second adjuster being operable to limit or permit rotational movement of the base pivot portion.

Abstract: A suspensible night-luminous decoration includes a suspending member, a light unit and a transparent decorative body. The suspensible member consists of a hook and a connect tube under the hook, and the connect tube contains the LED of the light unit having a circuit board and plural LED. The decorative body has a connective head and a swelled portion under the connective head. The swelled portion contains many transparent air bubbles and the connective head has a light groove for the LED to extend in, and the bottom of the light groove is located just on top of the swelled portion. When the LED are lit up, their different colored light beams shoot through the swelled portion so that the air bubbles may reflect different colored lights to make the suspensible night-luminous decoration provided with effect of alteration of different colored lights.

Abstract: A suspensible night-luminous decoration includes a suspending member, a light unit and a transparent decorative body. The suspensible member consists of a hook and a connect tube under the hook, and the connect tube contains the LED of the light unit having a circuit board and plural LED. The decorative body has a connective head and a swelled portion under the connective head. The swelled portion contains many transparent air bubbles and the connective head has a light groove for the LED to extend in, and the bottom of the light groove is located just on top of the swelled portion. When the LED are lit up, their different colored light beams shoot through the swelled portion so that the air bubbles may reflect different colored lights to make the suspensible night-luminous decoration provided with effect of alteration of different colored lights.