Abstract: Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes forming a semiconductor element over a substrate, the semiconductor element including a channel region and a source/drain region, forming a dummy gate stack over the channel region of the semiconductor element, depositing a first spacer layer over sidewalls of the dummy gate stack, depositing a second spacer layer over the first spacer layer, wherein the second spacer layer includes at least one silicon sublayer and at least one nitrogen-containing sublayer, after the depositing of the second spacer layer, etching the source/drain region of the semiconductor element to form a source/drain recess, and after the etching, removing the second spacer layer.

Abstract: Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes forming a semiconductor element over a substrate, the semiconductor element including a channel region and a source/drain region, forming a dummy gate stack over the channel region of the semiconductor element, depositing a first spacer layer over sidewalls of the dummy gate stack, depositing a second spacer layer over the first spacer layer, wherein the second spacer layer includes at least one silicon sublayer and at least one nitrogen-containing sublayer, after the depositing of the second spacer layer, etching the source/drain region of the semiconductor element to form a source/drain recess, and after the etching, removing the second spacer layer.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

Abstract: A method of fabricating a mask is provided. The method includes providing a hard mask layer disposed on top of absorber, a capping layer, and a multilayer that are disposed on a substrate. The method includes forming a middle layer over the hard mask layer, forming a photo resist layer over the middle layer, patterning the photo resist layer, etching the middle layer through the patterned photo resist layer, etching the hard mask layer through the patterned middle layer, and etching the absorber through the patterned hard mask layer. In some embodiments, etching the hard mask layer through the patterned middle layer includes a dry-etching process that has a first removal rate of the hard mask layer and a second removal rate of the middle layer, and a ratio of the first removal rate of the hard mask layer to the second removal rate of the middle layer is greater than 5.

Abstract: Described herein are divalent nucleobases that each binds two nucleic acid strands, matched or mismatched when incorporated into a nucleic acid or nucleic acid analog backbone, such as in a ?-peptide nucleic acid (?PNA). Also provided are genetic recognition reagents comprising one or more of the divalent nucleobases and a nucleic acid or nucleic acid analog backbone, such as a ?PNA backbone. Uses for the divalent nucleobases and monomers and genetic recognition reagents containing the divalent nucleobases also are provided.

Abstract: A method of making optically pure preparations of chiral ?PNA (gamma peptide nucleic acid) monomers is provided. Nano structures comprising chiral ?PNA structures also are provided. Methods of amplifying and detecting specific nucleic acids, including in situ methods are provided as well as compositions and kits useful in those methods. Lastly, methods of converting nucleobase sequences from right-handed helical PNA, nucleic acid and nucleic acid analog structures to left-handed ?PNA, and vice-versa, are provided.

Abstract: Described herein are genetic recognition reagents comprising terminal aromatic moieties that bind specifically to a template nucleic acid and concatenate. Also provided are methods of using the genetic recognition reagents, e.g., to treat or diagnose a repeat expansion disorder, such as DMI.

Abstract: A pair of pyrrole-imidazole polyamides conjugated with nucleic acid-based cooperation system is provided.

Abstract: A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.

Abstract: An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided.

Abstract: In an embodiment, a method includes: patterning a plurality of mandrels over a mask layer; forming an etch coating layer on top surfaces of the mask layer and the mandrels; depositing a dielectric layer over the mask layer and the mandrels, a first thickness of the dielectric layer along sidewalls of the mandrels being greater than a second thickness of the dielectric layer along the etch coating layer; removing horizontal portions of the dielectric layer; and patterning the mask layer using remaining vertical portions of the dielectric layer as an etching mask.

Abstract: In an embodiment, a method includes: patterning a plurality of mandrels over a mask layer; forming an etch coating layer on top surfaces of the mask layer and the mandrels; depositing a dielectric layer over the mask layer and the mandrels, a first thickness of the dielectric layer along sidewalls of the mandrels being greater than a second thickness of the dielectric layer along the etch coating layer; removing horizontal portions of the dielectric layer; and patterning the mask layer using remaining vertical portions of the dielectric layer as an etching mask.

Abstract: A data transfer method for a wireless access point with a Multi-User Multiple-Input Multiple-Output (MU-MIMO) function is disclosed. The data transfer method includes: receiving support function information and a data transfer request from each of electronic devices; determining whether each of the electronic devices supports MU-MIMO function according to the support function information; dividing the electronic devices into a first group supporting the MU-MIMO function and a second group without supporting the MU-MIMO function; allocating a first transferring time frame to the first group and allocating a second transferring time frame to the second group according to the data transfer requests; transferring data requested by the first group within the first transferring time frame via the MU-MIMO function; transferring data requested by the second group within the second transferring time frame.

Abstract: An LED lamp includes a rectifier, a microcontroller, at least one group of LEDs, and at least one MOSFET device. The group of LEDs includes multiple lines of serially connected LEDs, which are connected in parallel to form a first end connected to a DC output of the rectifier and a second end connected to one or more serially connected current-limiting resistors which in turn are connected to a common ground. The gate terminal of the MOSFET device is connected to an output pin of the microcontroller. The drain terminal of the MOSFET device is connected to the second end of the group of LEDs. The source terminal of the MOSFET device is connected to the common ground. A voltage detection circuit is connected between the DC output of the rectifier and an input pin of the microcontroller for detecting the voltage at the DC output of the rectifier.

Abstract: A method of making optically pure preparations of chiral ?PNA (gamma peptide nucleic acid) monomers is provided. Nano structures comprising chiral ?PNA structures also are provided. Methods of amplifying and detecting specific nucleic acids, including in situ methods are provided as well as compositions and kits useful in those methods. Lastly, methods of converting nucleobase sequences from right-handed helical PNA, nucleic acid and nucleic acid analog structures to left-handed ?PNA, and vice-versa, are provided.

Abstract: An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided.

Abstract: A light harvesting lens module for collecting an ambient light includes a plurality of annular lenses. The annular lenses are arranged in order from center to outside to form a disc-structure. Each annular lens has a light-input curved surface and a light-output curved surface. The light-input curved surface is in opposition to the center. The light-output curved surface is in opposition to the light-input curved surface, and faces the center. The light is incident on the light-input curved surface, and is refracted and tend to concentrate by the light-input curved surface. Then, the light is emitted from the annular lens, and is refracted to the direction of the center by the light-output curved surface. The ambient light is able to be compressed into a point light by the lens module, so as to increase the concentration ratio and the compression ratio to further get the effective advantage.

Abstract: An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided.

Abstract: A lamp is provided with a full-wave rectifier for convert AC to DC; a SPD electrically connected to the full-wave rectifier for protecting the lamp from voltage spikes; series connected LEDs electrically connected to the SPD; a microprocessor electrically connected to the SPD; series connected MOSFET start circuits electrically to the microprocessor, the MOSFET start circuits configured to switch electronic signals; and resistors each electrically interconnected the LED and the MOSFET start circuit. In response to a normal DC supplied from the SPD, the microprocessor creates a PWM signal to activate the MOSFET start circuits which in turn initiate operations of the LEDs via the resistors respectively. In response to an abnormal DC having voltage spikes supplied from the SPD, the microprocessor deactivates the MOSFET start circuits which in turn direct the DC through the resistors rather than supply the DC to the LEDs via the resistors respectively.

Abstract: A light harvesting lens module for collecting an ambient light includes a plurality of annular lenses. The annular lenses are arranged in order from center to outside to form a disc-structure. Each annular lens has a light-input curved surface and a light-output curved surface. The light-input curved surface is in opposition to the center. The light-output curved surface is in opposition to the light-input curved surface, and faces the center. The light is incident on the light-input curved surface, and is refracted and tend to concentrate by the light-input curved surface. Then, the light is emitted from the annular lens, and is refracted to the direction of the center by the light-output curved surface. The ambient light is able to be compressed into a point light by the lens module, so as to increase the concentration ratio and the compression ratio to further get the effective advantage.