Abstract: Tissue types (e.g. tumorous or normal) are determined using optical spectroscopy. Autofluorescence and diffuse reflectance spectra are generated by separately illuminating a tissue surface area with monochromatic light and white light. A peak in autofluorescence intensity (F) is provided around 460 nm from both from normal and tumorous human brain tissue with 337 nm monochromatic light excitation. Separation between white/gray matter and brain tumors is provided by certain combined F-Rd spectrum numerical values, especially certain ratios of F and Rd between 400 nm-600 nm. Numerical values based on certain combinations of unequal exponential powers of F and Rd are essentially unaffected by the superficial blood contamination. In addition, diffuse reflectance intensity (Rd) between 650 nm and 800 nm from white/gray matter was significantly stronger than that from primary and secondary brain tumors and is used with the combined spectrum numerical value to enhance accurate determinations.

Abstract: A process for removing photoresist material without any residues left and damage to the in-process substrate is described. The present process for removing photoresist on an in-process substrate comprises the steps of providing a cover layer which is to be etched on the in-process substrate and providing a layer of photoresist material thereon. The photoresist layer is patterned, exposed and developed. Then, the developed photoresist layer is further exposed without using a mask. The cover layer is etched with the use of the patterned photoresist layer. After etching, the photoresist material is removed by a solvent.

Abstract: An improved focusing and color-filtering structure is provided for use in a semiconductor light-sensitive device, such as CMOS (complementary metal-oxide semiconductor) light-sensitive device, that can be used, for example, on a digital camera or a PC camera to convert photographed image directly into digital form. The focusing and color-filtering structure is used for the focusing and color-filtering of the light incident thereon prior to the light being detected by the light-sensitive device. The focusing and color-filtering structure is characterized in the forming of a dummy pattern layer in the non-filter area surrounding the array of color-filter layers, which allows the subsequently formed planarization layer to be highly planaized with a substantially uniformly flat top surface without having slopes such that the subsequently formed microlenses can all be disposed upright in position without being slanted.

Abstract: Optical spectroscopy for brain tumor demarcation was investigated in this study. Fluorescence and diffuse reflectance spectra were measured from normal and tumorous human brain tissues in vitro. A fluorescence peak was consistently observed around 460 nm (±10 nm) emission from both normal and tumorous brain tissues using 337 nm excitation. Intensity of this fluorescence peak (F460) from normal brain tissues was greater than that from primary brain tumorous tissues. In addition, diffuse reflectance (Rd) between 650 nm and 800 nm from white matter was significantly stronger than that from primary and secondary brain tumors. A good separation between gray matter and brain tumors was found using the ratio of F460 and Rd at 400 nm-600 nm. Two empirical discrimination algorithms based on F (400 nm-600 nm), Rd (600 nm-800 nm), and F (400 nm-600 nm)/Rd (400 nm-600 nm) were developed. These algorithms yielded an average sensitivity and specificity of 96% and 93%, respectively.

Abstract: A process for removing photoresist material without any residues left and damage to the in-process substrate is described. The present process for removing photoresist on an in-process substrate comprises the steps of providing a cover layer which is to be etched on the in-process substrate and providing a layer of photoresist material thereon. The photoresist layer is patterned, exposed and developed. Then, the developed photoresist layer is further exposed without using a mask. The cover layer is etched with the use of the patterned photoresist layer. After etching, the photoresist material is removed by a solvent.

Abstract: A reworking method to remove color filter film from a complementary metal-oxide semiconductor (CMOS) image sensor. In this method, the color filter film, including a planar film and a color film, is formed after the passivation of a CMOS device. Whether the color filter film is pre-baked or not, the reworking method of the invention is suitable. The method includes a plasma process, a solvent process, and a plasma process, which are sequentially performed.

Abstract: A method of fabricating a complementary metal-oxide-semiconductor (CMOS) photosensitive device. In this method, a wafer substrate is provided. Then, a first passivation layer is formed over the wafer substrate. The first passivation layer, which is made from a material that includes silicon nitride or silicon oxide, is heated so that it melts. Then, color filters including a red filter region, a green filter region and a blue filter region are formed over the first passivation layer. The color filters are used to filter out different colors of monochromatic light. The color filters are made from a material that includes acrylic. Subsequently, a second passivation layer having a planar top surface is formed over the color filters. The second passivation layer is made from a material that includes silicon nitride or silicon oxide. Next, photolithographic and etching operations are carried out to form an opening through the second passivation layer and the first passivation layer.

Abstract: A method for in-situ removing photoresist material. An etching process for patterning a passivation layer of a CMOS photosensor is performed on an etching machine. Oxygen is in-situ used to remove the parched photoresist material. The etching process and the in-situ O2 process are performed, for example, on a Tegal-903 etching machine. The Tegal-903 has better stability than an Asher etching machine for removing the parched photoresist material using oxygen plasma. A stable etching rate is thus obtained to prevent the acrylic material layer from being damaged by over-etching and to prevent the photoresist material from remaining.

Abstract: An improved focusing and color-filtering structure is provided for use in a semiconductor light-sensitive device, such as CMOS (complementary metal-oxide semiconductor) light-sensitive device, that can be used, for example, on a digital camera or a PC camera to convert photographed image directly into digital form. The focusing and color-filtering structure is used for the focusing and color-filtering of the light incident thereon prior to the light being detected by the light-sensitive device. The focusing and color-filtering structure is characterized in the forming of a dummy pattern layer in the non-filter area surrounding the array of color-filter layers, which allows the subsequently formed planarization layer to be highly planarization with a substantially uniformly flat top surface without having slopes such that the subsequently formed microlenses can all be disposed upright in position without being slanted.

Abstract: A multiplex heating system for measuring and regulating the temperature of a plurality of heating elements is disclosed. The heating system includes a plurality of heating elements, which also function as temperature sensing elements, that exhibit a known change in resistance as a function of temperature. The heating system further includes a power source, a control apparatus for regulating the respective heating power of each heating element, a measurement apparatus for measuring changes in resistance in the heating elements, and a plurality of switching arrangements. Each switching arrangement is coupled between one of the heating elements and, alternately, the control apparatus and the measurement apparatus, connecting the heating element to either the control apparatus or the measurement apparatus.