Patents by Inventor Wei-Chieh Chiang
Wei-Chieh Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170221952Abstract: An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The image sensor chip includes a substrate supporting an integrated circuit (IC) configured to sense incident light. The sidewall interconnect structure is arranged along a sidewall of the substrate and electrically coupled with the IC. A method for manufacturing the image sensor chip and an image sensor package including the image sensor chip are also provided.Type: ApplicationFiled: April 14, 2017Publication date: August 3, 2017Inventors: Kuo-Chin Huang, Pao-Tung Chen, Wei-Chieh Chiang, Kazuaki Hashimoto, Jen-Cheng Liu
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Patent number: 9634053Abstract: An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The image sensor chip includes a substrate supporting an integrated circuit (IC) configured to sense incident light. The sidewall interconnect structure is arranged along a sidewall of the substrate and electrically coupled with the IC. A method for manufacturing the image sensor chip and an image sensor package including the image sensor chip are also provided.Type: GrantFiled: December 9, 2014Date of Patent: April 25, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kuo-Chin Huang, Pao-Tung Chen, Wei-Chieh Chiang, Kazuaki Hashimoto, Jen-Cheng Liu
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Patent number: 9609239Abstract: An image sensor includes a substrate, a plurality of visible light photosensitive devices, an infrared photosensitive device, a plurality of color filters, an infrared band-pass filter, a micro-lens layer and an infrared filter layer. The plurality of visible light photosensitive devices and the infrared photosensitive device are disposed in the substrate, wherein the plurality of visible light photosensitive devices and the infrared photosensitive device are arranged in an array. The plurality of color filters are respectively disposed to cover the plurality of visible light photosensitive device. In addition, the infrared band-pass filter disposed to cover the infrared photosensitive device. Furthermore, the micro-lens layer is disposed on the plurality of color filters and the infrared band-pass filter. The infrared filter layer is disposed to cover the plurality of visible light photosensitive device.Type: GrantFiled: August 20, 2015Date of Patent: March 28, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Yuichiro Yamashita
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Publication number: 20170077163Abstract: An image sensor for high angular response discrimination is provided. A plurality of pixels comprises a phase detection autofocus (PDAF) pixel and an image capture pixel. Pixel sensors of the pixels are arranged in a semiconductor substrate. A grid structure is arranged over the semiconductor substrate, laterally surrounding color filters of the pixels. Microlenses of the pixels are arranged over the grid structure, and comprise a PDAF microlens of the PDAF pixel and an image capture microlens of the image capture pixel. The PDAF microlens comprises a larger optical power than the image capture microlens, or comprises a location or shape so a PDAF receiving surface of the PDAF pixel has an asymmetric profile. A method for manufacturing the image sensor is also provided.Type: ApplicationFiled: September 16, 2015Publication date: March 16, 2017Inventors: Keng-Yu Chou, Chien-Hsien Tseng, Wei-Chieh Chiang, Wen-I Hsu, Yuichiro Yamashita
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Publication number: 20170054924Abstract: An image sensor includes a substrate, a plurality of visible light photosensitive devices, an infrared photosensitive device, a plurality of color filters, an infrared band-pass filter, a micro-lens layer and an infrared filter layer. The plurality of visible light photosensitive devices and the infrared photosensitive device are disposed in the substrate, wherein the plurality of visible light photosensitive devices and the infrared photosensitive device are arranged in an array. The plurality of color filters are respectively disposed to cover the plurality of visible light photosensitive device. In addition, the infrared band-pass filter disposed to cover the infrared photosensitive device. Furthermore, the micro-lens layer is disposed on the plurality of color filters and the infrared band-pass filter. The infrared filter layer is disposed to cover the plurality of visible light photosensitive device.Type: ApplicationFiled: August 20, 2015Publication date: February 23, 2017Inventors: Chun-Hao CHUANG, Chien-Hsien TSENG, Kazuaki HASHIMOTO, Keng-Yu CHOU, Wei-Chieh CHIANG, Yuichiro YAMASHITA
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Patent number: 9564468Abstract: A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A metal grid overlies the semiconductor substrate and is made up of metal grid segments that surround outer perimeters of the photodiodes, respectively, such that first openings within the metal grid overlie the photodiodes, respectively. A low-n grid is made up of low-n grid segments that surround the respective outer perimeters of the photodiodes, respectively, such that second openings within the low-n grid overlie the photodiodes, respectively. Color filters are arranged in the first and second openings of the photodiodes and have a refractive index greater than a refractive index of the low-n grid. A substrate isolation grid extends into the semiconductor substrate and is made up of isolation grid segments that surround outer perimeters of the photodiodes, respectively. A method for manufacturing the BSI pixel sensors is also provided.Type: GrantFiled: March 20, 2015Date of Patent: February 7, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Keng-Yu Chou, Chun-Hao Chuang, Chien-Hsien Tseng, Shyh-Fann Ting, Wei-Chieh Chiang, Yuichiro Yamashita
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Patent number: 9536915Abstract: An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.Type: GrantFiled: May 5, 2016Date of Patent: January 3, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Keng-Yu Chou, Kazuaki Hashimoto, Jen-Cheng Liu, Jhy-Jyi Sze, Wei-Chieh Chiang, Pao-Tung Chen
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Publication number: 20160276395Abstract: A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A composite grid includes a metal grid and a low refractive index (low-n) grid. The metal grid includes first openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. The low-n grid includes second openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. Color filters are arranged in the first and second openings of the corresponding photodiodes and have a refractive index greater than a refractive index of the low-n grid. Upper surfaces of the color filters are offset relative to an upper surface of the composite grid. A method for manufacturing the BSI pixel sensors is also provided.Type: ApplicationFiled: March 20, 2015Publication date: September 22, 2016Inventors: Keng-Yu Chou, Chun-Hao Chuang, Chien-Hsien Tseng, Shyh-Fann Ting, Wei-Chieh Chiang, Yuichiro Yamashita
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Publication number: 20160276394Abstract: A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A metal grid overlies the semiconductor substrate and is made up of metal grid segments that surround outer perimeters of the photodiodes, respectively, such that first openings within the metal grid overlie the photodiodes, respectively. A low-n grid is made up of low-n grid segments that surround the respective outer perimeters of the photodiodes, respectively, such that second openings within the low-n grid overlie the photodiodes, respectively. Color filters are arranged in the first and second openings of the photodiodes and have a refractive index greater than a refractive index of the low-n grid. A substrate isolation grid extends into the semiconductor substrate and is made up of isolation grid segments that surround outer perimeters of the photodiodes, respectively. A method for manufacturing the BSI pixel sensors is also provided.Type: ApplicationFiled: March 20, 2015Publication date: September 22, 2016Inventors: Keng-Yu Chou, Chun-Hao Chuang, Chien-Hsien Tseng, Shyh-Fann Ting, Wei-Chieh Chiang, Yuichiro Yamashita
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Patent number: 9437645Abstract: A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A composite grid includes a metal grid and a low refractive index (low-n) grid. The metal grid includes first openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. The low-n grid includes second openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. Color filters are arranged in the first and second openings of the corresponding photodiodes and have a refractive index greater than a refractive index of the low-n grid. Upper surfaces of the color filters are offset relative to an upper surface of the composite grid. A method for manufacturing the BSI pixel sensors is also provided.Type: GrantFiled: March 20, 2015Date of Patent: September 6, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Keng-Yu Chou, Chun-Hao Chuang, Chien-Hsien Tseng, Shyh-Fann Ting, Wei-Chieh Chiang, Yuichiro Yamashita
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Publication number: 20160254304Abstract: An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.Type: ApplicationFiled: May 5, 2016Publication date: September 1, 2016Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Keng-Yu CHOU, Kazuaki HASHIMOTO, Jen-Cheng LIU, Jhy-Jyi SZE, Wei-Chieh CHIANG, Pao-Tung CHEN
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Patent number: 9374538Abstract: An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.Type: GrantFiled: September 15, 2014Date of Patent: June 21, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Keng-Yu Chou, Kazuaki Hashimoto, Jen-Cheng Liu, Jhy-Jyi Sze, Wei-Chieh Chiang, Pao-Tung Chen
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Publication number: 20160163755Abstract: An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The image sensor chip includes a substrate supporting an integrated circuit (IC) configured to sense incident light. The sidewall interconnect structure is arranged along a sidewall of the substrate and electrically coupled with the IC. A method for manufacturing the image sensor chip and an image sensor package including the image sensor chip are also provided.Type: ApplicationFiled: December 9, 2014Publication date: June 9, 2016Inventors: Kuo-Chin Huang, Pao-Tung Chen, Wei-Chieh Chiang, Kazuaki Hashimoto, Jen-Cheng Liu
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Publication number: 20160099271Abstract: An image sensor includes a substrate, dual-waveband photosensitive devices, at least one infrared photosensitive device, a transparent dielectric layer, at least one infrared band-pass filter, a color filter layer and a micro-lens layer. The dual-waveband photosensitive devices are disposed in the substrate, and each dual-waveband photosensitive device is configured to sense an infrared light and one visible light. The infrared photosensitive device is disposed in the substrate, in which the dual-waveband photosensitive devices and the infrared photosensitive device are arranged in an array. The transparent dielectric layer is disposed over the dual-waveband photosensitive devices and the infrared photosensitive device. The infrared band-pass filter is disposed in the transparent dielectric layer and corresponds to the infrared photosensitive device. The color filter layer is disposed to cover the transparent dielectric layer and the infrared band-pass filter.Type: ApplicationFiled: October 2, 2014Publication date: April 7, 2016Inventors: Keng-Yu CHOU, Kazuaki HASHIMOTO, Jen-Cheng LIU, Jhy-Jyi SZE, Wei-Chieh CHIANG, Pao-Tung CHEN
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Publication number: 20160080669Abstract: An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.Type: ApplicationFiled: September 15, 2014Publication date: March 17, 2016Inventors: Keng-Yu CHOU, Kazuaki HASHIMOTO, Jen-Cheng LIU, Jhy-Jyi SZE, Wei-Chieh CHIANG, Pao-Tung CHEN
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Publication number: 20150334324Abstract: In some embodiments in accordance with the present disclosure, an image sensor is provided. The image sensor includes a substrate having a body. The body includes a first surface and a second surface opposite to the first surface. A through via is configured to extend from the first surface to the second surface. An intermediate layer is disposed over the body and configured to cover the through via. An image sensing device is disposed over the intermediate layer. In addition, a lens structure is disposed over the substrate, the intermediate layer and the image sensing device. In certain embodiments, the image sensing device is curved. In some embodiments, the image sensing device includes a semiconductor chip having a CMOS image sensing array.Type: ApplicationFiled: May 16, 2014Publication date: November 19, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: KAZUAKI HASHIMOTO, JEN-CHENG LIU, WEI-CHIEH CHIANG, PAO-TUNG CHEN
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Patent number: 8306276Abstract: The present invention discloses a bridge structural safety monitoring system and a bridge structural safety monitoring method. The method includes the steps of capturing an image of a monitoring area of a bridge to create a standard image of the bridge operated at normal conditions, capturing images of the monitoring area of the bridge continuously to obtain monitoring images, comparing the standard image with the monitoring image to obtain a displacement correlation coefficient of the monitoring area of the bridge, and transmitting the displacement correlation coefficient to a central console, such that the central console can determine the using condition of the bridge according to the displacement correlation coefficient.Type: GrantFiled: October 2, 2009Date of Patent: November 6, 2012Assignee: National Applied Research LaboratoriesInventors: Chi-Hung Huang, Wei-Chieh Chiang, Tai-Shan Liao, Chia-Wei Hsu, Jen-Yu Wen, Tzu-Hsuan Wei, Yung-Hsiang Chen
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Publication number: 20110044509Abstract: The present invention discloses a bridge structural safety monitoring system and a bridge structural safety monitoring method. The method includes the steps of capturing an image of a monitoring area of a bridge to create a standard image of the bridge operated at normal conditions, capturing images of the monitoring area of the bridge continuously to obtain monitoring images, comparing the standard image with the monitoring image to obtain a displacement correlation coefficient of the monitoring area of the bridge, and transmitting the displacement correlation coefficient to a central console, such that the central console can determine the using condition of the bridge according to the displacement correlation coefficient.Type: ApplicationFiled: October 2, 2009Publication date: February 24, 2011Applicant: NATIONAL APPLIED RESEARCH LABORATORIESInventors: Chi-Hung Huang, Wei-Chieh Chiang, Tai-Shan Liao, Chia-Wei Hsu, Jen-Yu Wen, Tzu-Hsuan Wei, Yung-Hsiang Chen
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Patent number: 6771498Abstract: A cooling system for a hinged portable computing device is provided having a first passive heat transfer device is carried within a first housing portion of the computer and a second passive heat transfer device that is carried within a second housing portion of the portable computer. A hinge structure interconnects the first and second housing portions for pivotal movement relative to one another, where the hinge structure includes a heat conductive first gudgeon having a pintle and a thermal interface block. The thermal interface block is disposed in the second housing portion and connected in thermal communication with the second first passive heat transfer device. A heat conductive second gudgeon is also provided having a journal and a thermal interface block.Type: GrantFiled: October 25, 2002Date of Patent: August 3, 2004Assignee: Thermal Corp.Inventors: Hwai-Ming Wang, Wei-Chieh Chiang, Hsien-Tsang Liu
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Publication number: 20040080908Abstract: A cooling system for a hinged portable computing device is provided having a first passive heat transfer device is carried within a first housing portion of the computer and a second passive heat transfer device that is carried within a second housing portion of the portable computer. A hinge structure interconnects the first and second housing portions for pivotal movement relative to one another, where the hinge structure includes a heat conductive first gudgeon having a pintle and a thermal interface block. The thermal interface block is disposed in the second housing portion and connected in thermal communication with the second first passive heat transfer device. A heat conductive second gudgeon is also provided having a journal and a thermal interface block.Type: ApplicationFiled: October 25, 2002Publication date: April 29, 2004Inventors: Hwai-Ming Wang, Wei-Chieh Chiang, Hsien-Tsang Liu