Patents by Inventor Wei-Chih Hsieh

Wei-Chih Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250156618
    Abstract: A method for designing an integrated circuit comprises identifying a first circuit component that presents a voltage (IR) drop being equal to or greater than an IR drop threshold through at least an IR drop analysis, splitting the plurality of timing paths into a first subset of timing paths and a second subset of timing paths, based on a timing margin threshold; and adding a second circuit component disposed along the second subset of timing paths, while keeping the first circuit component disposed along the first subset of timing paths. The first circuit component can be disposed along a plurality of timing paths that each extend from a first storage node and to a second storage node and can be each associated with a timing margin.
    Type: Application
    Filed: November 14, 2023
    Publication date: May 15, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Wen Lin, Wei-Chih Hsieh, Florentin Dartu
  • Publication number: 20240370629
    Abstract: A method (of manufacturing a semiconductor device, a corresponding layout diagram including cells such that, for a subset of the cells, each subject one of the cells (subject cell) in the subset has a neighborhood including first and second neighbor cells on corresponding first and second sides of the subject cell relative to the first direction) includes: for each subject cell in the subset, generating a sidefile which represents neighborhood-specific proximity-effect information; and, for each cell in the subset of the cells, the generating a sidefile including: populating the sidefile with a first neighbor-specific proximity-effect (NSPE) parameter (corresponding to an inter-cell proximity-effect induced by the first neighbor cell) identifying a nearest first transistor of the first neighbor cell; and populating the sidefile with a second NSPE parameter (corresponding to an inter-cell proximity-effect induced by the second neighbor cell) identifying a nearest first transistor of the second neighbor cell.
    Type: Application
    Filed: July 18, 2024
    Publication date: November 7, 2024
    Inventors: Yen-Pin CHEN, Florentin DARTU, Wei-Chih HSIEH, Tzu-Hen LIN, Chung-Hsing WANG
  • Patent number: 12086522
    Abstract: For a method of manufacturing a semiconductor device, a corresponding layout diagram is stored on a non-transitory computer-readable medium, the layout diagram being arranged relative to first and second perpendicular directions, the layout diagram including cells such that, for a subset of the cells, each subject one of the cells (subject cell) in the subset has a neighborhood including first and second neighbor cells on corresponding first and second sides of the subject cell relative to the first direction. The method includes: for each subject cell in the subset, generating a sidefile which represents neighborhood-specific proximity-effect information.
    Type: Grant
    Filed: June 22, 2021
    Date of Patent: September 10, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Pin Chen, Florentin Dartu, Wei-Chih Hsieh, Tzu-Hen Lin, Chung-Hsing Wang
  • Publication number: 20240143880
    Abstract: A method includes determining a first timing of a transition sequence of a signal on a first path of an integrated circuit (IC) design, the first timing being based on an IC design signoff voltage, determining a second timing of the transition sequence of the signal on the first path, the second timing being based on the signoff voltage and a first voltage drop along the first path, calculating a first path derating factor based on a timing gap between the first and second timings of the transition sequence, and using the first path derating factor to evaluate the IC design.
    Type: Application
    Filed: January 27, 2023
    Publication date: May 2, 2024
    Inventors: Yu-Wen LIN, Bogdan TUTUIANU, Florentin DARTU, Wei-Chih HSIEH, Osamu TAKAHASHI
  • Publication number: 20230385512
    Abstract: A method (of manufacturing a semiconductor device, a corresponding layout diagram being stored on a non-transitory computer-readable medium, the layout diagram including a subset of transistor-to-well-edge-influenced (TWEI) cells, each TWEI cell including one or more transistors in one or more corresponding wells) includes generating a netlist which represents the subset, the generating a netlist including: In some embodiments, for each TWEI cell represented in the netlist, and for a given transistor in a given well in a given cell, expanding the netlist to include one or more proximity-effect-inducer (PEI) parameters, each PEI parameter being related to an intra-cell physical proximity of the given transistor to an edge of the given well (given well-edge).
    Type: Application
    Filed: August 10, 2023
    Publication date: November 30, 2023
    Inventors: Yen-Pin CHEN, Florentin DARTU, Wei-Chih HSIEH, Tzu-Hen LIN, Chung-Hsing WANG
  • Publication number: 20220245318
    Abstract: For a method of manufacturing a semiconductor device, a corresponding layout diagram is stored on a non-transitory computer-readable medium, the layout diagram being arranged relative to first and second perpendicular directions, the layout diagram including cells such that, for a subset of the cells, each subject one of the cells (subject cell) in the subset has a neighborhood including first and second neighbor cells on corresponding first and second sides of the subject cell relative to the first direction. The method includes: for each subject cell in the subset, generating a sidefile which represents neighborhood-specific proximity-effect information.
    Type: Application
    Filed: June 22, 2021
    Publication date: August 4, 2022
    Inventors: Yen-Pin CHEN, Florentin DARTU, Wei-Chih HSIEH, Tzu-Hen LIN, Chung-Hsing WANG
  • Patent number: 11387818
    Abstract: A device is disclosed and includes a first transistor, a second transistor, and a first current limiter. First terminals of the first and second transistors are coupled to an output terminal, and gate terminals of the first and second transistors receive a first input signal. A first terminal of the first current limiter is coupled to a second terminal of the first transistor to output a first output signal, and a second terminal of the first current limiter is coupled to a second terminal of the second transistor to output a second output signal. A third output signal at the output terminal has a logic value different from that of the first input signal.
    Type: Grant
    Filed: July 12, 2021
    Date of Patent: July 12, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lun Ou, Wei-Chih Hsieh, Shang-Chih Hsieh
  • Publication number: 20210344330
    Abstract: A device is disclosed and includes a first transistor, a second transistor, and a first current limiter. First terminals of the first and second transistors are coupled to an output terminal, and gate terminals of the first and second transistors receive a first input signal. A first terminal of the first current limiter is coupled to a second terminal of the first transistor to output a first output signal, and a second terminal of the first current limiter is coupled to a second terminal of the second transistor to output a second output signal. A third output signal at the output terminal has a logic value different from that of the first input signal.
    Type: Application
    Filed: July 12, 2021
    Publication date: November 4, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lun OU, Wei-Chih HSIEH, Shang-Chih HSIEH
  • Patent number: 11063578
    Abstract: A device is disclosed and includes a first switch, a second switch, and a selector. The first switch outputs a first output signal at a first terminal thereof. The second switch is coupled to the first switch at a second terminal of the first switch. The second switch outputs a second output signal at the second terminal of the first switch in response to an input signal. The selector outputs, in response to the input signal received at two terminal of the selector, one of the first and second output signals as a third output signal. The third output signal has a logic value different from the input signal.
    Type: Grant
    Filed: August 27, 2020
    Date of Patent: July 13, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lun Ou, Wei-Chih Hsieh, Shang-Chih Hsieh
  • Publication number: 20200395924
    Abstract: A device is disclosed and includes a first switch, a second switch, and a selector. The first switch outputs a first output signal at a first terminal thereof. The second switch is coupled to the first switch at a second terminal of the first switch. The second switch outputs a second output signal at the second terminal of the first switch in response to an input signal. The selector outputs, in response to the input signal received at two terminal of the selector, one of the first and second output signals as a third output signal. The third output signal has a logic value different from the input signal.
    Type: Application
    Filed: August 27, 2020
    Publication date: December 17, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lun OU, Wei-Chih HSIEH, Shang-Chih HSIEH
  • Patent number: 10778197
    Abstract: A device is disclosed that includes a level shifter and an output stage. The level shifter is configured to generate a first output signal based on a logic value of a first input signal. The output stage is configured to receive the first output signal transmitted according to the logic value of the first input signal, and to generate a second output signal. The second output signal has a logic value that is different from a logic value of the first output signal, and the second output signal and the first input signal has a same logic value.
    Type: Grant
    Filed: November 16, 2019
    Date of Patent: September 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lun Ou, Wei-Chih Hsieh, Shang-Chih Hsieh
  • Publication number: 20200083871
    Abstract: A device is disclosed that includes a level shifter and an output stage. The level shifter is configured to generate a first output signal based on a logic value of a first input signal. The output stage is configured to receive the first output signal transmitted according to the logic value of the first input signal, and to generate a second output signal. The second output signal has a logic value that is different from a logic value of the first output signal, and the second output signal and the first input signal has a same logic value.
    Type: Application
    Filed: November 16, 2019
    Publication date: March 12, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lun OU, Wei-Chih HSIEH, Shang-Chih HSIEH
  • Patent number: 10483950
    Abstract: A device is disclosed that includes a level shifter and an output stage. The level shifter is configured to output a first output signal at a first output terminal in response to a first input signal having a first logic level, and is configured to output a second output signal at a second output terminal in response to the first input signal having a second logic level. The output stage is configured to receive and adjust the first output signal or the second output signal that is selected in response to the first input signal, and configured to generate a third output signal, wherein the third output signal has a logic value that is the same as a logic value of the first output signal or the second output signal.
    Type: Grant
    Filed: May 13, 2019
    Date of Patent: November 19, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lun Ou, Wei-Chih Hsieh, Shang-Chih Hsieh
  • Publication number: 20190280678
    Abstract: A device is disclosed that includes a level shifter and an output stage. The level shifter is configured to output a first output signal at a first output terminal in response to a first input signal having a first logic level, and is configured to output a second output signal at a second output terminal in response to the first input signal having a second logic level. The output stage is configured to receive and adjust the first output signal or the second output signal that is selected in response to the first input signal, and configured to generate a third output signal, wherein the third output signal has a logic value that is the same as a logic value of the first output signal or the second output signal.
    Type: Application
    Filed: May 13, 2019
    Publication date: September 12, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lun OU, Wei-Chih HSIEH, Shang-Chih HSIEH
  • Patent number: 10291210
    Abstract: A device is disclosed that includes a level shifter and a selector. The level shifter is configured to output a first output signal at a first output terminal in response to a first input signal having a first logic level, and is configured to output a second output signal at a second output terminal in response to the first input signal having a second logic level. The selector is coupled to the first output terminal and the second output terminal. The selector is configured to pass one of the first output signal or the second output signal in response to the first input signal, to an output of the selector.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: May 14, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lun Ou, Wei-Chih Hsieh, Shang-Chih Hsieh
  • Publication number: 20190115905
    Abstract: A device is disclosed that includes a level shifter and a selector. The level shifter is configured to output a first output signal at a first output terminal in response to a first input signal having a first logic level, and is configured to output a second output signal at a second output terminal in response to the first input signal having a second logic level. The selector is coupled to the first output terminal and the second output terminal. The selector is configured to pass one of the first output signal or the second output signal in response to the first input signal, to an output of the selector.
    Type: Application
    Filed: December 13, 2018
    Publication date: April 18, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lun OU, Wei-Chih HSIEH, Shang-Chih HSIEH
  • Patent number: 10164615
    Abstract: A device is disclosed that includes a level shifter and an output stage. The level shifter includes a first current limiter. The level shifter is configured to generate a first output signal at a first terminal of the first current limiter, and to generate a second output signal at a second terminal of the first current limiter according to a first input signal. The output stage is configured to adjust a voltage swing of a selected one of the first output signal and the second output signal.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: December 25, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lun Ou, Wei-Chih Hsieh, Shang-Chih Hsieh
  • Publication number: 20180115307
    Abstract: A device is disclosed that includes a level shifter and an output stage. The level shifter includes a first current limiter. The level shifter is configured to generate a first output signal at a first terminal of the first current limiter, and to generate a second output signal at a second terminal of the first current limiter according to a first input signal. The output stage is configured to adjust a voltage swing of a selected one of the first output signal and the second output signal.
    Type: Application
    Filed: December 21, 2017
    Publication date: April 26, 2018
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lun OU, Wei-Chih HSIEH, Shang-Chih HSIEH
  • Patent number: 9866205
    Abstract: A device is disclosed that includes a level shifter and a selector. The level shifter includes a first current limiter. The level shifter is configured to generate a first output signal at a first terminal of the first current limiter, and to generate a second output signal at a second terminal of the first current limiter according to a first input signal. The selector configured to selectively transmit one of the first output signal and the second output signal according to the first input signal.
    Type: Grant
    Filed: November 16, 2015
    Date of Patent: January 9, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Lun Ou, Wei-Chih Hsieh, Shang-Chih Hsieh
  • Publication number: 20170141765
    Abstract: A device is disclosed that includes a level shifter and a selector. The level shifter includes a first current limiter. The level shifter is configured to generate a first output signal at a first terminal of the first current limiter, and to generate a second output signal at a second terminal of the first current limiter according to a first input signal. The selector configured to selectively transmit one of the first output signal and the second output signal according to the first input signal.
    Type: Application
    Filed: November 16, 2015
    Publication date: May 18, 2017
    Inventors: Yu-Lun OU, Wei-Chih HSIEH, Shang-Chih HSIEH