Abstract: A semiconductor tester and a method for calibrating a probe card and a device under testing (DUT) are disclosed. The semiconductor tester includes: a support platform, including a support surface and configured to be able to move along a direction parallel to the support surface and rotate around a rotating shaft perpendicular to the support surface; a probe card including a plurality of probes stretching towards the support platform; and an alignment assembly, including: at least two first laser emitting apparatuses emitting a plurality of first laser beams; and a second laser emitting apparatus emitting a plurality of second laser beams. The first laser beams and the second laser beams are perpendicular to each other and are each arranged sequentially along a direction perpendicular to the support surface. The semiconductor tester aligns a probe card to a DUT with improved accuracy, thereby preventing the damage to the probe card.

Abstract: A method and apparatus for intensifying current leakage between adjacent memory cells includes that: a write operation is performed on a memory array, to form a column strip test pattern, the column strip test pattern being formed by arranging low-level memory cells and high-level memory cells in columns, and N columns of high-level memory cells being present between two adjacent columns of low-level memory cells, N?2; and voltage adjustment is performed on the low-level memory cells and the high-level memory cells, to increase potential differences between the low-level memory cells and the high-level memory cells.

Abstract: Embodiments of the present application provide a method and apparatus for determining a refresh counter of a DRAM. The method includes: writing data to a target memory cell connected with a target word line in the DRAM, and controlling the DRAM to perform refreshes starting from a preset word line according to a preset rule; determining, according to whether the data can be read accurately from the target memory cell after the refreshes, an intermediate refresh counter of refreshes on the target word line; and controlling, based on the intermediate refresh counter, the DRAM to perform refreshes starting from the target word line according to the preset rule, and determining the refresh counter of the DRAM according to whether the data can be read accurately from the target memory cell after the refreshes.

Abstract: Embodiments of the present application provide a method and apparatus for determining a refresh counter of a DRAM. The method includes: writing data to a target memory cell connected with a target word line in the DRAM, and controlling the DRAM to perform refreshes starting from a preset word line according to a preset rule; determining, according to whether the data can be read accurately from the target memory cell after the refreshes, an intermediate refresh counter of refreshes on the target word line; and controlling, based on the intermediate refresh counter, the DRAM to perform refreshes starting from the target word line according to the preset rule, and determining the refresh counter of the DRAM according to whether the data can be read accurately from the target memory cell after the refreshes.

Abstract: A transmitter, a receiver and a transceiver are provided. The transceiver includes a hybrid transceiving circuit and a common-mode voltage control circuit. The hybrid transceiving circuit includes a digital-to-analog converter (DAC) circuit, a line driver coupled to the DAC circuit, a filtering and/or amplifying circuit coupled to the line driver, and an analog-to-digital converter (ADC) circuit coupled to the filtering and/or amplifying circuit. The common-mode voltage control circuit is electrically connected to a node of the hybrid transceiving circuit and is configured to detect a common-mode voltage of the node and to adjust the common-mode voltage of the node.

Abstract: A semiconductor device includes: a substrate; a channel layer disposed on the substrate, wherein the channel layer is made of GaN; a barrier layer disposed on the channel layer, wherein the barrier layer is made of AlzGa1-zN; and an inserting structure inserted between the channel layer and the barrier layer. The inserting structure includes: a first inserting layer disposed on the channel layer, wherein the first inserting layer is made of AlxGa1-xN; and a second inserting layer disposed on the first inserting layer, wherein the second inserting layer is made of AlyGa1-yN, and y is greater than x. The semiconductor device further includes: a gate electrode disposed on the barrier layer; a source electrode and a drain electrode disposed on the barrier layer and respectively at opposite sides of the gate electrode; and a spike region formed below at least one of the source electrode and the drain electrode.

Abstract: Disclosed is a sample and hold circuit and method capable of amplifying an input signal. The method includes: in a sample phase, receiving a first (second) input signal with top electrodes of first (second) capacitors, and receiving the second (first) input signal with all bottom electrode(s) of at least a part of the first (second) capacitors; in a hold phase, stopping receiving the first (second) input signal with the top electrodes of the first (second) capacitors, and receiving a first (second) group of reference signals with the bottom electrodes of the first (second) capacitors, so that the first (second) capacitors provide a first (second) sample voltage on the top electrodes of the multiple first (second) capacitors through charge redistribution, wherein the first and second input signals are a pair of differential signals and they are opposite to each other.

Abstract: Embodiments of the present application provide a self-refresh frequency detection method, including: writing data to at least one wordline in a memory; performing a self-refresh operation on the memory; setting, after a clock enable signal changes to a low level, a duration of the low level; performing a reading operation on the memory at a positive trip point of the clock enable signal; acquiring a plurality of reading results corresponding to a plurality of durations of the low level; and obtaining a self-refresh frequency of the memory according to the plurality of durations of the low level and the plurality of reading results. The embodiments of the present application are conducive to improving the simplicity of self-refresh frequency detection.

Abstract: Disclosed is a sample and hold circuit and method capable of amplifying an input signal. The method includes: in a sample phase, receiving a first (second) input signal with top electrodes of first (second) capacitors, and receiving the second (first) input signal with all bottom electrode(s) of at least a part of the first (second) capacitors; in a hold phase, stopping receiving the first (second) input signal with the top electrodes of the first (second) capacitors, and receiving a first (second) group of reference signals with the bottom electrodes of the first (second) capacitors, so that the first (second) capacitors provide a first (second) sample voltage on the top electrodes of the multiple first (second) capacitors through charge redistribution, wherein the first and second input signals are a pair of differential signals and they are opposite to each other.

Abstract: A multi-stage switched capacitor circuit and an operation method thereof are provided. The multi-stage switched capacitor circuit includes a first operational stage, a second operational stage and a third operational stage that are serially connected in order. Each operational stage operates in a sample phase or a hold phase and generates a detection signal indicating an end of the hold phase. The operation method of the multi-stage switched capacitor circuit includes: controlling the second operational stage to operate in the hold phase when the detection signal of the first operational stage indicates the end of the hold phase of the first operational stage, and the detection signal of the third operational stage indicates the end of the hold phase of the third operational stage.

Abstract: A semiconductor tester and a method for calibrating a probe card and a device under testing (DUT) are disclosed. The semiconductor tester includes: a support platform, including a support surface and configured to be able to move along a direction parallel to the support surface and rotate around a rotating shaft perpendicular to the support surface; a probe card including a plurality of probes stretching towards the support platform; and an alignment assembly, including: at least two first laser emitting apparatuses emitting a plurality of first laser beams; and a second laser emitting apparatus emitting a plurality of second laser beams. The first laser beams and the second laser beams are perpendicular to each other and are each arranged sequentially along a direction perpendicular to the support surface. The semiconductor tester aligns a probe card to a DUT with improved accuracy, thereby preventing the damage to the probe card.

Abstract: A multi-stage switched capacitor circuit and an operation method thereof are provided. The multi-stage switched capacitor circuit includes a first operational stage, a second operational stage and a third operational stage that are serially connected in order. Each operational stage operates in a sample phase or a hold phase and generates a detection signal indicating an end of the hold phase. The operation method of the multi-stage switched capacitor circuit includes: controlling the second operational stage to operate in the hold phase when the detection signal of the first operational stage indicates the end of the hold phase of the first operational stage, and the detection signal of the third operational stage indicates the end of the hold phase of the third operational stage.

Abstract: A semiconductor structure for improving the thermal stability and Schottky behavior by engineering the stress in a III-nitride semiconductor, comprising a III-nitride semiconductor and a gate metal layer. The III-nitride semiconductor has a top surface on which a conductive area and a non-conductive area are defined. The gate metal layer is formed directly on the top surface of the III-nitride semiconductor and comprises a gate connection line and at least one gate contact extending from the gate connection line in a second direction perpendicular to the length of the gate connection line. The at least one gate contact forms a Schottky contact with the III-nitride semiconductor on the conductive area, and the gate connection line is in direct contact with the III-nitride semiconductor on the non-conductive area. The non-conductive area of the III-nitride semiconductor is at least partially covered by the gate connection line.

Abstract: A transmitter, a receiver and a transceiver are provided. The transceiver includes a hybrid transceiving circuit and a common-mode voltage control circuit. The hybrid transceiving circuit includes a digital-to-analog converter (DAC) circuit, a line driver coupled to the DAC circuit, a filtering and/or amplifying circuit coupled to the line driver, and an analog-to-digital converter (ADC) circuit coupled to the filtering and/or amplifying circuit. The common-mode voltage control circuit is electrically connected to a node of the hybrid transceiving circuit and is configured to detect a common-mode voltage of the node and to adjust the common-mode voltage of the node.

Abstract: A GaN-based field effect transistor comprises a semiconductor substrate, an epitaxial structure formed on the semiconductor substrate, a source electrode, a drain electrode, and a gate electrode. The epitaxial structure comprises a buffer layer, a channel layer, a spacer layer, an n-type doped barrier layer, a barrier layer, and a capping layer, sequentially. The epitaxial structure has a source recess and a drain recess. A bottom of the source recess is defined by the n-type doped barrier layer or the spacer layer. A bottom of the drain recess is defined by the n-type doped barrier layer or the spacer layer. The source electrode is formed in the source recess. The drain electrode is formed in the drain recess. The gate electrode is formed on the capping layer between the source electrode and the drain electrode.

Abstract: A wideband impedance matching network comprises a fundamental output MN including a first portion and a second portion and a harmonic compensation MN including a harmonic MN portion and a harmonic MN backside-via inductor formed on an outer surface of a harmonic MN backside via hole penetrating through a semiconductor substrate. The first portion, the second portion and the harmonic MN portion are formed on the semiconductor substrate. A second terminal of the first portion and a first terminal of the second portion are connected to an RF output terminal. A first terminal of the harmonic MN portion and a first terminal of the first portion are connected to an RF input terminal. A second terminal of the harmonic MN portion is connected to a first terminal of the harmonic MN backside-via inductor. A second terminal of the harmonic MN backside-via inductor is grounded.

Abstract: A semiconductor structure for improving the thermal stability and Schottky behavior by engineering the stress in a III-nitride semiconductor, comprising a III-nitride semiconductor and a gate metal layer. The III-nitride semiconductor has a top surface on which a conductive area and a non-conductive area are defined. The gate metal layer is formed directly on the top surface of the III-nitride semiconductor and comprises a gate connection line and at least one gate contact extending from the gate connection line in a second direction perpendicular to the length of the gate connection line. The at least one gate contact forms a Schottky contact with the III-nitride semiconductor on the conductive area, and the gate connection line is in direct contact with the III-nitride semiconductor on the non-conductive area. The non-conductive area of the III-nitride semiconductor is at least partially covered by the gate connection line.

Abstract: A digital-to-analog converter (DAC) device includes a DAC circuitry. The DAC circuitry includes a first DAC circuit and a second DAC circuit. The first DAC circuit is configured to generate a first signal according to a plurality of least significant bits of an input signal. The second DAC circuit is configured to output a second signal according to a plurality of most significant bits of the input signal. A first turn-on time of at least one current source circuit in the first DAC circuit is configured to set the first signal.

Abstract: A digital-to-analog converter (DAC) device includes a DAC circuitry. The DAC circuitry includes a first DAC circuit and a second DAC circuit. The first DAC circuit is configured to generate a first signal according to a plurality of least significant bits of an input signal. The second DAC circuit is configured to output a second signal according to a plurality of most significant bits of the input signal. A first turn-on time of at least one current source circuit in the first DAC circuit is configured to set the first signal.

Abstract: A semiconductor structure for improving the gate metal adhesion and the Schottky stability, comprising: a III-nitride semiconductor having a top surface on which a conductive area and a non-conductive area are defined; a source contact metal and a first drain contact metal forming ohmic contact with the III-nitride semiconductor on the conductive area, and the first drain contact metal provided at one side of the source contact metal; and a gate metal layer comprising a gate connection line and a first gate finger extending from the gate connection line, the first gate finger interposing between the source contact metal and the first drain contact metal and forming a Schottky contact with the III-nitride semiconductor on the conductive area, wherein the first gate finger has a first terminal anchor at an end thereof surrounding the source contact metal, and the first terminal anchor has an increased width.