Abstract: A storage device and data processing method thereof is described. The invention provides different ECC for different memory pages. The storage device uses the long-bit ECC for easy interference page, and uses the short-bit ECC for hard interference page. Therefore, the accuracy of the data is maintained and the reading/writing speed is increased.

Abstract: The present invention provides an authentication method for inter-domain information communication applied to first and second domains. The method instructs a first electronic device belonging to the first domain to request, through an intermediary node device simultaneously registered in the first and second domains, to obtain a first key from a second key distribution center in the second domain for transmission to a second electronic device in the second domain, and instructs the second electronic device to request, through the intermediary node device, to obtain a second key from a first key distribution center in the first domain for transmission to the first electronic device. Therefore, the first and second electronic devices are instructed to generate a shared third key using the first and second keys to perform secure information communication authentication.

Abstract: The invention provides an epoxy nanocomposite material for dental therapy, which can be applied to direct or indirect clinical restoration, dental core-post system, and dental brace etc. The epoxy nanocomposite filling material provided by the invention can be polymerized with various curing agents to form the polymer with low shrinkage.

Abstract: A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.

Abstract: A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.

Abstract: A pair of pliers has a body and two jaws. The body has two connecting sections and two handles. The jaws are detachably mounted on the connecting sections of the body, and each jaw has a working nose and a mounting section. The mounting section has a mounting hole formed in a bottom surface of the mounting section and corresponding to the connecting section of the body in the shape and having a circular hole with a depth D and a diameter R, an enlarged hole with a depth smaller than the depth D and an inner diameter larger than the diameter R at the circular hole and cutting chips deposited and accumulated in the circular hole and shaped as a hill with a convex top.

Abstract: A manufacturing method of a heat sink is disclosed. A board having a first width is transported to a machine tool. The board is punched to form multiple sheet bodies. A bent part is formed on a terminal end of each sheet body having a second width. A first combined part protrudes from the bent part. A second combined part is hollowly disposed on the edge of the bent part as an indentation corresponding to the first combined part. The bent part is bent to stand correspondingly to each of the sheet bodies. Each sheet body is cut to form multiple heat dissipation fins. The second width is equal to the first width. When the heat dissipation fins overlap with each other, the first combined part of one heat dissipation fin is connected to the second combined part of another dissipation fin.

Abstract: A method of inspecting an EUV reticle is proposed, which uses an original design layout information to align the plurality of patterns on an image, which is got by scanning the surface of an EUV reticle, such that the defect can be identified and classified according to the aligned patterns. In the scanning process, a step of conditioning surface charge is followed by a step of inspecting surface of the EUV reticle wherein the step of conditioning surface can neutralize the surface charge and the step of inspecting can obtain an image of the EUV reticle. The method of inspecting an EUV reticle also tuning a retarding electrode to attract more secondary electrons such that the greylevels of different patterns may be shown and the defect can be identified and classified.

Abstract: A frequency-phase adjusting device includes a first controller, a second controller, and an oscillating circuit. The first controller generates a first control signal according to a target frequency and a current frequency. The second controller generates a second control signal according to the first control signal, wherein the second control signal is related to a first frequency difference, a second frequency difference, and a designated duration. The oscillating circuit adjusts the current frequency according to the first frequency difference, the second frequency difference, and the designated duration. The current frequency is set as a first frequency during a first duration, set as a second frequency during the designated duration, and set as a third frequency during a second duration. The first frequency difference equals a difference between the first frequency and the second frequency, and the second frequency difference equals a difference between the second frequency and the third frequency.

Abstract: A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.

Abstract: The present invention discloses a solar cell having a multi-layered structure that is used to generate, transport, and collect electric charges. The multi-layered nanostructure comprises a cathode, a conducting metal layer, a photo-active layer, a hole-transport layer, and an anode. The photo-active layer comprises a tree-like nanostructure array and a conjugate polymer filler. The tree-like nanostructure array is used as an electron acceptor while the conjugate polymer filler is as an electron donor. The tree-like nanostructure array comprises a trunk part and a branch part. The trunk part is formed in-situ on the surface of the conducting metal layer and is used to provide a long straight transport pathway to transport electrons. The large contact area between the branch part and the conjugate polymer filler provides electron-hole separation.

Abstract: The present invention discloses a solar cell having a multi-layered structure that is used to generate, transport, and collect electric charges. The multi-layered nanostructure comprises a cathode, a conducting metal layer, a photo-active layer, a hole-transport layer, and an anode. The photo-active layer comprises a tree-like nanostructure array and a conjugate polymer filler. The tree-like nanostructure array is used as an electron acceptor while the conjugate polymer filler is as an electron donor. The tree-like nanostructure array comprises a trunk part and a branch part. The trunk part is formed in-situ on the surface of the conducting metal layer and is used to provide a long straight transport pathway to transport electrons. The large contact area between the branch part and the conjugate polymer filler provides electron-hole separation.

Abstract: The present invention discloses a solar cell having a multi-layered structure that is used to generate, transport, and collect electric charges. The multi-layered nanostructure comprises a cathode, a conducting metal layer, a photo-active layer, a hole-transport layer, and an anode. The photo-active layer comprises a tree-like nanostructure array and a conjugate polymer filler. The tree-like nanostructure array is used as an electron acceptor while the conjugate polymer filler is as an electron donor. The tree-like nanostructure array comprises a trunk part and a branch part. The trunk part is formed in-situ on the surface of the conducting metal layer and is used to provide a long straight transport pathway to transport electrons. The large contact area between the branch part and the conjugate polymer filler provides electron-hole separation.

Abstract: A method of inspecting an EUV reticle is proposed, which uses an electron beam (EB) with low density and high energy to scan the surface of an EUV reticle for inspecting the EUV reticle. A step of conditioning surface charge is followed by a step of inspecting surface of the EUV reticle. The step of conditioning surface can neutralize the surface charge and the step of inspecting can obtain an image of the EUV reticle. The present invention uses a scanning electron microscope (SEM) to provide a primary electron beam for conditioning the surface charge and a focused primary electron beam for scanning the surface.

Abstract: A color photoresist with gold nanoparticles and color filters made therefrom are provided. The color photoresist with gold nanoparticles includes substituted acrylate monomers, gold nanoparticles (or clusters), surfactants and a photo-polymerization initiator. The color filter includes a polyacrylate, gold nanoparticles (or clusters) and surfactants. The gold nanoparticles (or clusters) can be dispersed in the color photoresist or the color filter by the surfactants.

Abstract: A cryptographic method for enhancing computation performance of a central processing unit involves the execution of a conversion function of the cryptographic method by the central processing unit. The conversion function computation requires the use of a plurality of substitution boxes. The method comprises the steps of: (A) detecting a processing bit length of the central processing unit; (B) generating at least one new substitution box from original substitution boxes according to the processing bit length and a bit permutation sequence, each of the at least one new substitution box containing a plurality of new substitution values whose bit length is equal to the processing bit length; and (C) using a bit expansion operation, a bitwise exclusive OR operation, the selection operations that use the at least one new substitution box generated in step (B), a plurality of bitwise AND operations, and at least one bitwise OR operation to conduct the conversion function computation.

Abstract: A communication device and the method thereof are disclosed in embodiments of the present invention. The communication device includes a level determining module, an digital to analog converter and an analog to digital converter. The level determining module determines a plurality of voltage levels and voltage intensity thereof according to an estimating signal to generate a first digital signal. The digital to analog converter converts the first digital signal into a pulse shaped analog signal according to the plurality of voltage levels and voltage intensity thereof. The analog to digital converter converts a first difference signal into a second digital signal wherein the first difference signal equals the result of subtracting the pulse shaped analog signal from a receiving signal.

Abstract: A method of programming a nonvolatile memory cell which comprises a select transistor and a memory transistor includes applying a preset limit current to a first input of the memory cell, applying a limit voltage to a current limiting circuit electrically connected to a second input of the memory cell, applying a limit voltage to stabilize a voltage drop of the memory cell, and applying a ramped gate voltage to the memory cell to program the memory cell with a preset limited current determined by the current limiting circuit.

Abstract: An apparatus for a beacon-enabled wireless network, a transmission time determination method, and a tangible machine-readable medium thereof are provided. The apparatus is located within the coverage area of the first equipment. The second equipment is located within the coverage area of the apparatus. The apparatus comprises a receive/transmission module and a decision module. The receive/transmission module is configured to receive the beacon of the first equipment. The decision module is configured to decide information of an upload time slot and a download time slot of the apparatus according to the beacon so that the receive/transmission module can perform data transmission with the first equipment by the upload time slot and perform data transmission with the second equipment by the download time slot. According to the aforementioned allocations, transmission collisions can be avoided and delay of transmission times is decreased.

Abstract: A method for inspecting overlay shift defect during semiconductor manufacturing is disclosed herein and includes a step for providing a charged particle microscopic image of a sample, a step for identifying an inspection pattern measure in the charged particle microscopic image, a step for averaging the charged particle microscopic image by using the inspection pattern measure to form an averaged inspection pattern measure, a step for estimating an average width from the averaged inspection pattern measure, and a step for comparing the average width with a predefined threshold value to determine the presence of the overlay shift defect.