Patents by Inventor Wei Han
Wei Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20250259844Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate and forming a floating additive layer comprising a floating additive polymer. The floating additive polymer includes a pendant fluorine substituted organic group and one or more of a pendant acid generating group, a pendant base group, a pendant acid labile group, a pendant chromophore group, a pendant developer solubility promoter group, and a pendant acid diffusion control group. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed to form a pattern in the photoresist layer.Type: ApplicationFiled: May 17, 2024Publication date: August 14, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Han KO, Yu-Chung SU, Ching-Yu CHANG, Shi-Cheng WANG, An-Ren ZI, Yen-Hao CHEN, Wei-Han LAI, Kuan-Hsin LO, Chieh-Hsin HSIEH
-
Publication number: 20250260446Abstract: Embodiments of this application disclose a channel estimation method and apparatus. The method includes: receiving indication information for indicating M N-dimensional precoding vectors, wherein each precoding vector is applied to one of M frequency bands, wherein the M N-dimensional precoding vectors form a space-frequency matrix, wherein the space-frequency matrix is generated by performing a weighted combination on a plurality of space-frequency component matrices, wherein M?1, N?2, and both M and N are integers, wherein the space-frequency matrix is associated with one spatial stream of a plurality of spatial streams, and wherein quantities of frequency-domain component vectors associated with each of space-frequency matrices of different spatial streams of the plurality of spatial streams are the same; and determining the M N-dimensional precoding vectors based on the indication information.Type: ApplicationFiled: April 30, 2025Publication date: August 14, 2025Applicant: HUAWEI TECHNOLOGIES CO., LTD.Inventors: Xiaohan Wang, Huangping Jin, Xiang Ren, Wei Han, Xiaoyan Bi
-
Patent number: 12385277Abstract: The building node includes an upper unit column, a lower unit column, an upper unit bottom beam, a lower unit ceiling beam, an upper connecting box, a lower connecting box, a connecting plate, an upper anchorage device, a lower anchorage device, an upper sleeve, a lower sleeve, a pull rod shear lock, position limiting nuts, and an injection pipe. The lower anchorage device is fixedly connected to the top plate of the lower connecting box; the lower position limiting nut is fixedly connected to the lower anchorage device; one end of the lower sleeve is fixedly connected to the lower anchorage device, and another end of the lower sleeve is fixedly connected to the top plate of the lower connecting box; the bottom of the upper sleeve is fixedly connected to the bottom plate of the upper connecting box.Type: GrantFiled: October 31, 2022Date of Patent: August 12, 2025Assignee: SOUTH CHINA UNIVERSITY OF TECHNOLOGYInventors: Junxian Zhao, Zhiqiu He, Qixiang Tian, Wei Han
-
Publication number: 20250249458Abstract: An optoelectronic tweezer device includes a transparent substrate, a semiconductor layer, a first electrode and a dielectric layer. The semiconductor layer is located above the transparent substrate and includes a first doping region, a second doping region and a transition region, wherein the transition region is located between the first doping region and the second doping region. The first electrode is located on the first doping region and is electrically connected to the first doping region. The dielectric layer is located above the semiconductor layer and has a first through hole overlapping the first electrode.Type: ApplicationFiled: April 24, 2025Publication date: August 7, 2025Applicant: AUO CorporationInventors: Shih-Hua Hsu, Wei-Han Chen, Ching-Wen Chen, Ying-Hui Lai
-
Patent number: 12382703Abstract: A semiconductor device includes a base portion on a semiconductor substrate, a channel layer vertically above the base portion and extending parallel to a top surface of the semiconductor substrate, a gate portion between the channel layer and the base portion, a source/drain feature connected to the channel layer, an inner spacer between the source/drain feature and the gate portion, and an air gap between the source/drain feature and the semiconductor substrate. Moreover, a bottom surface of the source/drain feature is exposed in the air gap.Type: GrantFiled: September 2, 2021Date of Patent: August 5, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: I-Hsieh Wong, Alex Lee, Wei-Han Fan, Tzu-Hua Chiu, Wei-Yang Lee, Chia-Pin Lin
-
Patent number: 12380318Abstract: Disclosed is a hyperspectral data analysis method based on a semi-supervised learning strategy, which includes: hyperspectral sample data is acquired; a sample training set and a prediction set are constructed, herein an unlabeled prediction set sample is used; a regression network based on a generative adversarial network is constructed, including a generator network that generates a sample, and a discriminator/regressor network that has functions of judging the authenticity of the sample and outputting a quantitative analysis value at the same time; a loss function of the generative adversarial network is constructed, including a loss function of the discriminator, a loss function of the regressor, and a loss function of the generator with a sample distribution matching function. The generative adversarial network is used to generate a sample. A sample distribution matching strategy is used to supplement an existing unlabeled sample set. So, the accuracy of hyperspectral quantitative analysis is improved.Type: GrantFiled: March 17, 2020Date of Patent: August 5, 2025Assignee: Institute of Intelligent Manufacturing, Guangdong Academy of SciencesInventors: Yisen Liu, Songbin Zhou, Chang Li, Wei Han, Kejia Huang, Weixin Liu, Zefan Qiu
-
Patent number: 12377385Abstract: Porous metal oxide catalytic materials with planar morphologies which are derived from metal-organic framework (MOF) materials via thermal decomposition, oxidation pretreatment and pyrolysis processes. The porous metal oxides are mainly transition metal oxides, derived from MOFs containing the corresponding transition metal ions, such as Cu, Zn, Y, La, Ce, Ti, Zr, V, Cr, Mn, Fe, Co, and Ni ions. The transformation conditions from MOF materials to metal oxides, such as temperature, atmosphere and duration, are well defined to obtain metal oxides with controlled morphologies. Furthermore, the present subject matter relates to a low-temperature catalytic decomposition of volatile organic compounds (VOCs) with a wide concentration range on two-dimensional metal oxides.Type: GrantFiled: July 31, 2019Date of Patent: August 5, 2025Assignee: THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: King Lun Yeung, Qingyue Wang, Zhimin Li, Wei Han
-
Publication number: 20250247269Abstract: A system having, for example, data lines. In a case of any device that loses power, to keep communications, the data lines may be disconnected from, for instance, a physical layer transceiver, and at the same time, the lines may be connected to other lines to bypass the powered-off device. FETs and reed switches may be used for connection, disconnection and bypass functions.Type: ApplicationFiled: April 14, 2022Publication date: July 31, 2025Inventors: Zhi Yi Sun, Kaixuan Qin, Hua Tang, Ke Wei Han, Chao Chen, Jian Wang, Yu Zhi Yan
-
Patent number: 12366564Abstract: A wall mountable sensor module includes a housing defining an internal space that is segmented into a first internal space and a second internal space. The first internal space defines an air channel that extends from an air inlet to an air outlet. Two or more sensors are configured to be exposed to the air flow channel. A first sensor is configured to detect a first air parameter and a second sensor is configured to detect a second different air parameter, wherein the second sensor is situated downstream of the first sensor in the air flow channel. The sensor module includes a fan housed by the housing, the fan configured to cause an airflow to flow in through the air inlet, through the air flow channel thereby exposing each of the sensors to the airflow, and out through the air outlet.Type: GrantFiled: October 11, 2022Date of Patent: July 22, 2025Assignee: HONEYWELL INTERNATIONAL INC.Inventors: Chao Chen, Yu Zhi Yan, Hua Tang, Kaixuan Qin, Zhi Yi Sun, Jian Wang, Ke Wei Han, Qixiang Hu
-
Patent number: 12359564Abstract: Methods, systems, and devices for determining an acoustic parameter of a downhole fluid using an acoustic assembly. Methods include transmitting a plurality of pulses; measuring values for at least one wave property measured for reflections of the plurality of pulses received at at least one acoustic receiver, including: a first value for a first reflection traveling a first known distance from a first acoustically reflective surface having a first known acoustic impedance, a second value for a second reflection traveling a second known distance substantially the same as the first known distance from a second acoustically reflective surface having a second known acoustic impedance, and a third value for a third reflection traveling a third known distance from a third acoustically reflective surface having a third known acoustic impedance substantially the same as the second acoustic impedance; and estimating the acoustic parameter using the values.Type: GrantFiled: June 13, 2022Date of Patent: July 15, 2025Assignee: BAKER HUGHES OILFIELD OPERATIONS LLCInventors: Wei Han, Rocco DiFoggio, James V. Leggett, III
-
Patent number: 12363988Abstract: A semiconductor device and a method of forming the same are provided. In an embodiment, an exemplary semiconductor device includes a vertical stack of channel members disposed over a substrate, a gate structure wrapping around each channel member of the vertical stack of channel members, and a source/drain feature disposed over the substrate and coupled to the vertical stack of channel members. The source/drain feature is spaced apart from a sidewall of the gate structure by an air gap and a dielectric layer, and the air gap extends into the source/drain feature.Type: GrantFiled: May 5, 2022Date of Patent: July 15, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei-Han Fan, Chia-Pin Lin, Wei-Yang Lee, Tzu-Hua Chiu, Kuan-Hao Cheng, Po Shao Lin
-
Patent number: 12347683Abstract: Method of manufacturing semiconductor device, includes forming protective layer over substrate having plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of: Wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, wherein at least one of a, b, c, d, e, f, g, h, and i on each repeating unit is not H. R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and n is 2-1000. A resist layer is formed over protective layer, and resist layer is patterned.Type: GrantFiled: March 6, 2024Date of Patent: July 1, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jing Hong Huang, Wei-Han Lai, Ching-Yu Chang
-
Patent number: 12330157Abstract: An optoelectronic tweezer device includes a transparent substrate, a semiconductor layer, a first electrode and a dielectric layer. The semiconductor layer is located above the transparent substrate and includes a first doping region, a second doping region and a transition region, wherein the transition region is located between the first doping region and the second doping region. The first electrode is located on the first doping region and is electrically connected to the first doping region. The dielectric layer is located above the semiconductor layer and has a first through hole overlapping the first electrode.Type: GrantFiled: May 23, 2022Date of Patent: June 17, 2025Assignee: Au Optronics CorporationInventors: Shih-Hua Hsu, Wei-Han Chen, Ching-Wen Chen, Ying-Hui Lai
-
Publication number: 20250177069Abstract: A surgical robot arm control system and a surgical robot arm control method are provided. The surgical robot arm control system includes a surgical robot arm, a spatial positioning information acquisition unit, a depth image acquisition unit, and a processor. The spatial positioning information acquisition unit is configured to acquire spatial coordinate data. The depth image acquisition unit is configured to acquire a panoramic depth image. The processor performs image recognition on the panoramic depth image to recognize the surgical robot arm and locates a position of the surgical robot arm based on the spatial coordinate data. The processor defines an environmental space according to the position of the surgical robot arm and plans a movement path of the surgical robot arm in the environmental space. The processor controls the surgical robot arm according to the movement path of the surgical robot arm.Type: ApplicationFiled: December 5, 2023Publication date: June 5, 2025Applicant: Metal Industries Research & Development CentreInventors: Bo-Wei Pan, Sheng-Hung Yang, Wei Han Hsieh
-
Publication number: 20250175223Abstract: This application provides example channel state information determining methods and example related apparatuses. One example method includes sending, by a first communication apparatus, a first reference signal to a second communication apparatus. The access network device receives first measurement information from the second communication apparatus, where the first measurement information is measurement information determined based on the first reference signal. The access network device receives a second reference signal from the second communication apparatus, and determines channel state information based on the first measurement information and the second reference signal.Type: ApplicationFiled: January 29, 2025Publication date: May 29, 2025Inventors: Chencheng YE, Yiling YUAN, Huangping JIN, Wei HAN
-
Patent number: 12315572Abstract: Systems, methods, circuits, and apparatus for managing multi-block operations in memory devices are provided. In one aspect, a memory device includes a memory cell array including at least two blocks, a bit line coupled to a string of memory cells in each of the at least two blocks respectively, a common source line (CSL) coupled to strings coupled to the bit line in the at least two blocks, and a circuitry configured to perform a multi-block operation in the memory cell array by at least one of: forming a first current path from the bit line through the strings to the CSL coupled to a ground to discharge a capacitor associated with the bit line that is pre-charged, or forming a second current path from the CSL coupled to a supply voltage through the strings to the bit line to charge the capacitor that is pre-discharged.Type: GrantFiled: November 7, 2022Date of Patent: May 27, 2025Assignee: Macronix International Co., Ltd.Inventors: Wei-Han Chen, Chun-Hsiung Hung
-
Publication number: 20250162838Abstract: Techniques for automatically modifying elevator workflow based on incident type are provided. An incident occurring within an elevator is detected via a video camera. Video analytics are used to determine the incident type. It is determined that a floor selection associated with the incident type will place elevator passengers or people on the selected floor at risk. Elevator workflow execution is automatically modified based on the incident type and risk associated with the floor selection. The floor selection is displayed while modifying the elevator workflow to a different floor. A security notification indicative of the incident type and the automatic modification of the elevator workflow is sent.Type: ApplicationFiled: November 20, 2023Publication date: May 22, 2025Inventors: CHUN HOCK LEE, HUI BOON CHUA, WEI HAN NGAN, JIA MIN MOON
-
Patent number: 12302615Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. The semiconductor device further includes an air gap between the inner spacer and the source/drain feature.Type: GrantFiled: February 7, 2024Date of Patent: May 13, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Po-Yu Lin, Wei-Yang Lee, Chia-Pin Lin, Tzu-Hua Chiu, Kuan-Hao Cheng, Wei-Han Fan, Li-Li Su, Wei-Min Liu
-
Publication number: 20250138624Abstract: Methods and systems involving automotive computing architectures with phased wake sequences and power control are disclosed herein. A disclosed automotive computing system includes at least three subsystems: a first subsystem that is in an always-on power domain, a second subsystem that is powered on from a sleep state in response to an event detected by the first subsystem, and a third subsystem that is powered on, from an off state, after the first subsystem and the second subsystem are powered on. The subsystems of the architecture can be activated in different phases based on a given scenario in which the automotive computing architecture is operating. The same subsystem can occupy a different phase in different scenarios. The phased wake sequences may conserve power without sacrificing utility and may be optimized for different scenarios and triggering events.Type: ApplicationFiled: October 30, 2024Publication date: May 1, 2025Inventors: Yongbum Kim, Wei-han Lien, Luke Yen, Thaddeus Fortenberry
-
Publication number: 20250138428Abstract: The present disclosure provides resist rinse solutions and corresponding lithography techniques that achieve high pattern structural integrity for advanced technology nodes. An example lithography method includes forming a resist layer over a workpiece, exposing the resist layer to radiation, developing the exposed resist layer using a developer that removes an unexposed portion of the exposed resist layer, thereby forming a patterned resist layer, and rinsing the patterned resist layer using a rinse solution. The developer is an organic solution, and the rinse solution includes water.Type: ApplicationFiled: January 6, 2025Publication date: May 1, 2025Inventors: Chien-Wei WANG, Wei-Han LAI, Ching-Yu CHANG