Abstract: A method for checking a medium-term and long-term maintenance plan of a power grid. A predicted load value and one or more historical load values of a power grid are acquired and clustered through a clustering algorithm, and a historical moment at which a historical load value is in a same cluster as the predicted load value and has a largest load value is selected as a target historical moment. A power grid operation mode model at the target historical moment is acquired, and the power grid operation mode model is updated according to the maintenance plan and open loop point information by using a full wiring approach to obtain a future-state power grid operation mode model. Ground state power flow data of the power grid are calculated based on the operation mode model, and safety check is carried out according to a preset ground state power flow limit.

Abstract: Manufacturing method includes forming photoresist layer including photoresist composition over substrate. Photoresist composition includes: photoactive compound, polymer, crosslinker. The polymer structure A1, A2, A3 independently C1-C30 aryl, alkyl, cycloalkyl, hydroxylalkyl, alkoxy, alkoxyl alkyl, acetyl, acetylalkyl, carboxyl, alkyl carboxyl, cycloalkyl carboxyl, hydrocarbon ring, heterocyclic, chain, ring, 3-D structure; R1 is C4-C15 chain, cyclic, 3-D structure alkyl, cycloalkyl, hydroxylalkyl, alkoxy, or alkoxyl alkyl; proportion of x, y, and z in polymer is 0?x/(x+y+z)?1, 0?y/(x+y+z)?1, and 0?z/(x+y+z)?1, x, y, and z all not 0 for same polymer.

Abstract: A method of fabricating a semiconductor device is described. A plurality of semiconductor fins is formed in a first region on a substrate. An isolation region is formed around the plurality of semiconductor fins. Dummy fins are formed extending above the isolation region and laterally adjacent the plurality of semiconductor fins. A first etch is performed to etch the plurality of semiconductor fins such that a top surface of the plurality of semiconductor fins has a same height as a top surface of the isolation region. A second etch is performed selectively etching the isolation region to form a first recess in the isolation region laterally adjacent the semiconductor fins. A third etch is performed selectively etching the plurality of semiconductor fins to remove the plurality of semiconductor fins and to etch a second recess through the isolation region into the semiconductor substrate.

Abstract: A light-splitting reflection high-concentration photovoltaic photothermal integrated cavity receiver includes a photothermal assembly and a photovoltaic assembly. The photothermal assembly includes a high-temperature heat storage system, a low-temperature heat storage system, a plurality of heat exchange tube bundles defining a reflective cavity, and an ultraviolet and visible light reflective film arranged on an inner surface of the reflective cavity. The plurality of heat exchange tube bundles are communicated to form a heat collection circuit, and the heat collection circuit has an input end connected with the low-temperature heat storage system, and an output end connected with the high-temperature heat storage system. The photovoltaic assembly is arranged at a focus of the reflective cavity, and includes a near-infrared reflective film, a high concentration photovoltaic integrated receiver and a concentration photovoltaic cooler stacked sequentially along an incident direction of light.

Abstract: A wall module for a building control system includes a back plate with one or more mounting features for mounting the backplate to a wall. A main body includes one or more attachment features for removably attaching the main body to the back plate. The main body also includes a front side and a back side, wherein at least part of the front side is formed by a front plate. A display is housed by the main body in a display cavity that is defined at least in part by the front plate, and wherein at least part of the display is viewable from the front side. An antenna is housed by the main body in an antenna cavity that is defined at least in part by the front plate.

Abstract: A system and method for efficiently reducing the latency of load operations. In various embodiments, logic of a processor accesses a prediction table after fetching instructions. For a prediction table hit, the logic executes a load instruction with a retrieved predicted address from the prediction table. For a prediction table miss, when the logic determines the address of the load instruction and hits in a learning table, the logic updates a level of confidence indication to indicate a higher level of confidence when a stored address matches the determined address. When the logic determines the level of confidence indication stored in a given table entry of the learning table meets a threshold, the logic allocates, in the prediction table, information stored in the given entry. Therefore, the predicted address is available during the next lookup of the prediction table.

Abstract: Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary method includes forming a semiconductor stack on a substrate, wherein the semiconductor stack includes a first semiconductor layers and a second semiconductor layers alternatively disposed, the first semiconductor layers and the second semiconductor layers being different in composition; patterning the semiconductor stack to form a semiconductor fin; forming a dielectric fin next to the semiconductor fin; forming a first gate stack on the semiconductor fin and the dielectric fin; etching to a portion of the semiconductor fin within a source/drain region, resulting in a source/drain recess; and epitaxially growing a source/drain feature in the source/drain recess, defining an airgap spanning between a sidewall of the source/drain feature and a sidewall of the dielectric fin.

Abstract: Methods, systems, devices, and products for hydrocarbon tubular evaluation. Methods comprise conveying the logging tool in the tubular with a carrier; inducing with a transmitter a horizontal shear (SH) wave; identifying higher order SH mode signals received at a plurality of offset receivers responsive to a higher order SH mode engendered by the horizontal shear (SH) wave; estimating a dominant frequency for higher order SH mode from the higher order SH mode signals; estimating a group velocity for the higher order SH mode from the higher order SH mode signals; and estimating a tubular parameter using the dominant frequency and the group velocity. The tubular parameter may be at least tubular thickness. The method includes estimating the tubular parameter independent of the fundamental horizontal shear wave mode (SH0).

Abstract: Various techniques are provided to implement fast boot for programmable logic devices (PLDs). In one example, a method includes performing a read operation on a non-volatile memory to obtain a first value. The method further includes comparing the value to a predetermined value to obtain a comparison result. The method further includes determining whether a boot image stored on the non-volatile memory is to be read based at least on the first comparison result. The method further includes performing, based on the determining, a read operation on the boot image to obtain data associated with booting of a device. The method further includes booting the device based at least on the data. Related systems and devices are provided.

Abstract: An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, at least one dielectric capping layer overlying a topmost interconnect-level dielectric material layer, a bonding-level dielectric layer overlying the at least one dielectric capping layer, and a dual-layer inductor structure, which may include a lower conductive coil embedded within the topmost interconnect-level dielectric material layer, a conductive via structure vertically extending through the at least one dielectric capping layer, and an upper conductive coil embedded within the bonding-level dielectric layer and comprising copper.

Abstract: A processor may include an instruction distribution circuit and a plurality of execution pipelines. The instruction distribution circuit may distribute a conditional instruction to a first execution pipeline for execution when the conditional instruction is associated with a prediction of a high confidence level, or to a second execution pipeline for execution when the conditional instruction is associated with a prediction of a low confidence level. The second execution pipeline, not the first execution pipeline, may directly instruct the processor to obtain an instruction from a target address for execution, when the conditional instruction is mispredicted. Thus, when the conditional instruction is distributed to the first execution pipeline for execution and determined to be mispredicted, the first execution pipeline may cause the conditional instruction to be re-executed in the second execution pipeline to cause the instruction from the correct target address to be obtained for execution.

Abstract: A resilient prestress-free steel structure includes the elastic centering beam and two pin-ended box column bases. The elastic centering beam includes two cantilever segment I-shaped steel beams, a middle segment I-shaped steel beam and buckling restrained high strength steel bars. The cantilever segment I-shaped steel beams are fixed to the two pin-ended box column bases, the middle segment I-shaped steel beam is connected between the two cantilever segment I-shaped steel beams, the buckling restrained high strength steel bars are symmetrically arranged. One end of each of the buckling restrained high strength steel bars is firmly connected with the web of each of the cantilever segment I-shaped steel beams, and the other end of each of the buckling restrained high strength steel bars is firmly connected with the web of the middle segment I-shaped steel beam. The resilient prestress-free steel structure is arranged in left and right symmetrical manner.

Abstract: A method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer, a sensitizer, and a photo-acid generator (PAG), wherein the sensitizer includes a resonance ring that includes nitrogen and at least one double bond. The method further includes performing an exposing process to the photoresist layer. The method further includes developing the photoresist layer, thereby forming a patterned photoresist layer.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a photoresist layer over a substrate, exposing the photoresist layer to radiation to form a pattern therein, and selectively removing portions of the photoresist layer that are not exposed to the radiation to form a patterned photoresist layer. The photoresist layer comprises a fluorine-containing polymer, a crosslinker and a photoactive compound.

Abstract: A method for training a streaming automatic speech recognition student model includes receiving a plurality of unlabeled student training utterances. The method also includes, for each unlabeled student training utterance, generating a transcription corresponding to the respective unlabeled student training utterance using a plurality of non-streaming automated speech recognition (ASR) teacher models. The method further includes distilling a streaming ASR student model from the plurality of non-streaming ASR teacher models by training the streaming ASR student model using the plurality of unlabeled student training utterances paired with the corresponding transcriptions generated by the plurality of non-streaming ASR teacher models.

Abstract: A composition, comprising: a carbon backbone polymer; a first crosslinker; and a second crosslinker. The first crosslinker partially crosslinks the carbon backbone polymer at a temperature ranging from 100° C. to 170° C., and the second crosslinker crosslinks the carbon backbone polymer at a temperature ranging from 180 20 C. to 300° C. The first crosslinker is one or more selected from the group consisting of A-(OR)x, A-(NR)x, where A is a monomer, oligomer, or a second polymer having a molecular weight ranging from 100 to 20,000, R is an alkyl group, cycloalkyl group, cycloalkylepoxy group, or C3-C15 heterocyclic group, OR is an alkyloxy group, cycloalkyloxy group, carbonate group, alkylcarbonate group, alkyl carboxylate group, tosylate group, or mesylate group, NR is an alkylamide group or an alkylamino group, and x ranges from 2 to 1000. The second crosslinker is different from the first crosslinker.

Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate, a hard mask layer formed over the bottom layer, a material layer formed over the hard mask layer, and a photoresist layer formed over the material layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, where the developing removes portions of the photoresist layer and the material layer in a single step without substantially removing portions of the hard mask layer, and etching the hard mask layer using the photoresist layer as an etch mask. The material layer may include acidic moieties and/or acid-generating molecules. The material layer may also include photo-sensitive moieties and crosslinking agents.

Abstract: A computer-implemented method, a computer program product, and a computer system for resource-limited federated learning using dynamic masking. A server in federated machine learning evaluates resources of respective agents in the federated machine learning to determine capacities of model training by the respective agents. The server masks weights of a full machine learning model to construct a masked machine learning model, based on the capacities. The server distributes the masked machine learning model to the respective agents which train the masked machine learning model. The server receives from the respective agents updated weights obtained through training the masked machine learning model. The server updates the full machine learning model, based on the updated weights.

Abstract: A method of fabricating a semiconductor device is described. A plurality of semiconductor fins is formed in a first region on a substrate. An isolation region is formed around the plurality of semiconductor fins. Dummy fins are formed extending above the isolation region and laterally adjacent the plurality of semiconductor fins. A first etch is performed to etch the plurality of semiconductor fins such that a top surface of the plurality of semiconductor fins has a same height as a top surface of the isolation region. A second etch is performed selectively etching the isolation region to form a first recess in the isolation region laterally adjacent the semiconductor fins. A third etch is performed selectively etching the plurality of semiconductor fins to remove the plurality of semiconductor fins and to etch a second recess through the isolation region into the semiconductor substrate.

Abstract: Method of forming pattern in photoresist layer includes forming photoresist layer over substrate, selectively exposing photoresist layer to actinic radiation forming latent pattern. Latent pattern is developed by applying developer to form pattern. Photoresist layer includes photoresist composition including polymer: A1, A2, L are direct bond, C4-C30 aromatic, C4-C30 alkyl, C4-C30 cycloalkyl, C4-C30 hydroxylalkyl, C4-C30 alkoxy, C4-C30 alkoxyl alkyl, C4-C30 acetyl, C4-C30 acetylalkyl, C4-C30 alkyl carboxyl, C4-C30 cycloalkyl carboxyl, C4-C30 hydrocarbon ring, C4-C30 heterocyclic, —COO—, A1 and A2 are not both direct bonds, and are unsubstituted or substituted with a halogen, carbonyl, or hydroxyl; A3 is C6-C14 aromatic, wherein A3 is unsubstituted or substituted with halogen, carbonyl, or hydroxyl; R1 is acid labile group; Ra, Rb are H or C1-C3 alkyl; Rf is direct bond or C1-C5 fluorocarbon; PAG is photoacid generator; 0<x/(x+y+z)<1, 0<y/(x+y+z)<1, and 0<z/(x+y+z)<1.