Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.

Abstract: A driver circuit includes a logic control component and a plurality of pins coupled to the logic control component. The plurality of pins include a clock pin, a data pin and at least two output pins. The clock pin is configured to receive a clock signal. The data pin is configured to receive, under control of the logic control component, a data signal in a period of an active level of the clock signal. The logic control component is configured to generate a driving control signal corresponding to each output pin according to the data signal, so as to control an electrical signal flowing through the output pin.

Abstract: The present disclosure provides a driver circuit, a driving method of the driver circuit, an array substrate and a display device, belonging to the field of display technology. The driver circuit provided by the present disclosure includes a logic control module, a data pin and at least two output pins. The data pin is configured to receive driving data. The logic control module is configured to generate driving control signals in a one-to-one correspondence with the at least two output pins according to the driving data. The driving control signals are configured to control the current flowing through the corresponding output pins.

Abstract: A wiring substrate, an electronic element and an electronic apparatus is provided according to the disclosure, the wiring substrate includes: a base substrate; connection lines located on the substrate, wherein at least two connection lines are configured to transmit different signals; a plurality of pads, wherein any two pads are distributed at intervals, and the pads include first pads; a first pad group composed of at least three first pads; wherein the connection lines include a first type of connection line, which includes a plurality of branch portions, different branch portions are connected with different first pads, and any two branch portions are arranged at intervals.

Abstract: A semiconductor device includes a MEOL structure and a BEOL structure. The BEOL structure is formed over the MEOL structure and includes a first dielectric layer, a spacer and a conductive portion. The first dielectric layer has a lateral surface and a recess, wherein the recess is recessed with respect to the lateral surface. The spacer is formed the lateral surface and covers an opening of the recess. The conductive portion is formed adjacent to the spacer.

Abstract: A method for manufacturing an interconnect structure includes: forming a first dielectric layer; forming a mask; patterning the first dielectric layer through the mask to form a trench, an inner surface of the trench having two first portions opposite to each other along an X direction, two second portions opposite to each other along a Y direction, and a bottom portion; forming a second dielectric layer over the mask and the patterned first dielectric layer, and along an inner surface of the trench; etching the second dielectric layer by directing an etchant in a predetermined direction such that a first part of the second dielectric layer on the two first portions and the bottom portion is removed, and a second part of the second dielectric layer on the second portions of the trench remains and is formed into two reinforcing spacers; and forming a trench-filling element.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, strained layers, source/drain contact patterns, a gate contact via, and source/drain contact vias. The gate structure is disposed over the semiconductor substrate. The strained layers are disposed aside the gate structure. The source/drain contact patterns are disposed on and electrically connected to the strained layers. Top surfaces of the source/drain contact patterns are coplanar with a top surface of the gate structure. The gate contact via is disposed on and electrically connected to the gate structure. The source/drain contact vias are disposed on and electrically connected to the source/drain contact patterns.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate, a first conductive line, a first conductive via, a second conductive line, and a first barrier layer. The first conductive line is disposed on the substrate. The first conductive via is disposed on the first conductive line. The second conductive line is disposed on the first conductive line. The first barrier layer is disposed between the first conductive via and the second conductive line.

Abstract: A method for fabricating an integrated circuit device is provided. The method includes depositing a first dielectric layer; depositing a second dielectric layer over the first dielectric layer; etching a trench opening in the second dielectric layer, wherein the trench opening exposes a first sidewall of the second dielectric layer and a second sidewall of the second dielectric layer, the first sidewall of the second dielectric layer extends substantially along a first direction, and the second sidewall of the second dielectric layer extends substantially along a second direction different from the first direction in a top view; forming a via etch stop layer on the first sidewall of the second dielectric layer, wherein the second sidewall of the second dielectric layer is free from coverage by the via etch stop layer; forming a conductive line in the trench opening; and forming a conductive via over the conductive line.

Abstract: The present disclosure relates to an integrated chip. The integrated chip comprises a dielectric layer over a substrate. A first metal feature is over the dielectric layer. A second metal feature is over the dielectric layer and is laterally adjacent to the first metal feature. A first dielectric liner segment extends laterally between the first metal feature and the second metal feature along an upper surface of the dielectric layer. The first dielectric liner segment extends continuously from along the upper surface of the dielectric layer, to along a sidewall of the first metal feature that faces the second metal feature, and to along a sidewall of the second metal feature that faces the first metal feature. A first cavity is laterally between sidewalls of the first dielectric liner segment and is above an upper surface of the first dielectric liner segment.

Abstract: An electronic device and a method for determining the intensity of a low-frequency current are provided. The method includes: individually applying a corresponding first current to a body part of a user in N consecutive time intervals, wherein the time intervals include an i-th time interval to an (i+N)-th time interval; obtaining electromyography values of the body part in each time interval; determining a second current corresponding to an (i+N+1)-th time interval based on the first current corresponding to each time interval, the body part, personal information of the user, and the electromyography values of each time interval; and applying a second current to the body part of the user in the (i+N+1)-th time interval.

Abstract: An adjustable and changeable modular control panel includes a supporting dock, and at least one control unit. The supporting dock includes a main connecting member, and a plurality of receiving areas. Each of the receiving areas has a first connector, and a plurality of first positioning portions. The first connector of the receiving area is electrically connected to the main connecting member. The at least one control unit is mated with one of the receiving areas. Each of the control units has a control switch on its top side. The bottom side of each of the control units has a second connector, and a plurality of second positioning portions. The control switch is electrically connected to the second connector. The second connector is selectively mated with the first connector. The second positioning portions can be correspondingly located on the first positioning portions.

Abstract: In one embodiment, a method of forming metal interconnects uses a direct metal etch approach to form and fill the metal gap. The method may include directly etching a metal layer to form metal patterns. The metal patterns may be spaced apart from one another by recesses. A dielectric spacer may be formed extending along the sidewalls of each of the recesses. The recesses may be filled with a conductive material to form a second set of metal patterns. By directly etching the metal film, the technique allows for reduced line width roughness. The disclosed structure may have the advantages of increased reliability, better RC performance and reduced parasitic capacitance.

Abstract: A method of manufacturing a semiconductor device includes forming a fin structure over a substrate, forming a sacrificial gate structure over the fin structure, and etching a source/drain (S/D) region of the fin structure to form an S/D recess. The fin structure includes first semiconductor layers and second semiconductor layers alternately stacked. The method further includes depositing an insulating dielectric layer in the S/D recess, depositing an etch protection layer over a bottom portion of the insulating dielectric layer, and partially removing the insulating dielectric layer. The method further includes growing an epitaxial S/D feature in the S/D recess. The bottom portion of the insulating dielectric layer interposes the epitaxial S/D feature and the substrate.

Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.

Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.

Abstract: A method for transferring an electronic device includes steps as follows. A flexible carrier having a first surface on which the electronic device to be transferred is disposed and a second surface, a target substrate, a target substrate, and a light-transmissible pin having a pressing end are provided. The flexible carrier is spaced from the target substrate with the first surface thereof facing the target substrate. The flexible carrier is deformed by exerting the pin to press the second surface with the pressing end thereof at a position corresponding to the electronic device until the electronic device is in contact with the target substrate. An energy beam emitted from a light source standing outside the pin and then traveling through the pin and going out from the pressing end to bond the electronic device onto the target substrate is applied. The pin is released from pressing the flexible carrier.

Abstract: Techniques pertaining to power saving by data throughput pattern prediction in wireless communications are described. A user equipment (UE) determines whether a probability of a first value being greater than a second value is higher than a threshold. The UE triggers a radio resource control (RRC) connection release with a network responsive to the probability being higher than the threshold. The first value represents a succeeding continuous duration of no uplink (UL) and downlink (DL) data. The second value represents an RRC inactivity timer duration plus a threshold duration.

Abstract: A fan cage assembly includes a cage and a handle mechanism, the handle mechanism includes a mount member including a mount portion and an extension portion respectively located at different sides of the cage and an operative member movably disposed on the extension portion of the mount member.

Abstract: A driver circuit includes a logic control component and a plurality of pins coupled to the logic control component. The plurality of pins include a clock pin, a data pin and at least two output pins. The clock pin is configured to receive a clock signal. The data pin is configured to receive, under control of the logic control component, a data signal in a period of an active level of the clock signal. The logic control component is configured to generate a driving control signal corresponding to each output pin according to the data signal, so as to control an electrical signal flowing through the output pin.