Patents by Inventor Wei-Hsiang Lin

Wei-Hsiang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190056804
    Abstract: The present invention provides a mouse device, including a housing, a flexible film, a support structure, a linking structure, and a motor. The flexible film covers an opening of the housing. The linking structure is connected between the motor and the support structure. The motor is configured to enable the linking structure to move to change an abutting state that the support structure abuts against the flexible film, thereby enabling the flexible film to deform.
    Type: Application
    Filed: January 25, 2018
    Publication date: February 21, 2019
    Inventors: Chia-Yuan Chang, Chun-Lin Chu, Li-Kuei Cheng, Wei-Hsiang Lin, Shu-An Huang, Tsun-Han Wu
  • Patent number: 10058606
    Abstract: A fusion protein for use as a hepatitis B therapeutic vaccine is disclosed. The fusion protein comprises: (a) an antigen-presenting cell (APC)-binding domain or a CD91 receptor-binding domain; (b) a protein transduction domain; and (c) an antigen comprising a hepatitis B virus X protein deletion mutant that lacks amino acids (aa) at least from as 21 to as 50. The protein transduction domain is a fusion polypeptide comprising a T cell sensitizing signal-transducing peptide, a linker, and a translocation peptide. The APC-binding domain or the CD91 receptor-binding domain is located at the N-terminus of the fusion protein, and the antigen is located at the C-terminus of the protein transduction domain.
    Type: Grant
    Filed: September 11, 2017
    Date of Patent: August 28, 2018
    Assignee: TheVax Genetics Vaccine Co., Ltd.
    Inventors: Chia-Mao Wu, Jiun-Ming Wu, Yi-Chia Lin, Kung-Lung Lee, Chia-Hao Kang, Fu-Hsien Chiang, Cheng-Yung Chang, Wei-Lun Chang, Hsiang-Kai Lin, Chia-Kuan Peng, Wei-Hsiang Lin, Yi-Tsui Chiu
  • Publication number: 20180078636
    Abstract: A fusion protein for use as a hepatitis B therapeutic vaccine is disclosed. The fusion protein comprises: (a) an antigen-presenting cell (APC)-binding domain or a CD91 receptor-binding domain; (b) a protein transduction domain; and (c) an antigen comprising a hepatitis B virus X protein deletion mutant that lacks amino acids (aa) at least from as 21 to as 50. The protein transduction domain is a fusion polypeptide comprising a T cell sensitizing signal-transducing peptide, a linker, and a translocation peptide. The APC-binding domain or the CD91 receptor-binding domain is located at the N-terminus of the fusion protein, and the antigen is located at the C-terminus of the protein transduction domain.
    Type: Application
    Filed: September 11, 2017
    Publication date: March 22, 2018
    Inventors: Chia-Mao WU, Jiun-Ming Wu, Yi-Chia Lin, Kung-Lung Lee, Chia-Hao Kang, Fu-Hsien Chiang, Cheng-Yung Chang, Wei-Lun Chang, Hsiang-Kai Lin, Chia-Kuan Peng, Wei-Hsiang Lin, Yi-Tsui Chiu
  • Publication number: 20140175697
    Abstract: A modified long chain polyamide is provided. The modified long chain polyamide is polymerized by monomers comprising a long-aliphatic-chain monomer, and equimolar of an aromatic diacid and polyethyleneoxy diamine. A fiber made from the modified long chain polyamide is also provided.
    Type: Application
    Filed: December 26, 2012
    Publication date: June 26, 2014
    Applicant: TAIWAN TEXTILE RESEARCH INSTITUTE
    Inventors: Wei-Hung Chen, Ta-Yo Chen, Tsai-Wen Chen, Wei-Hsiang Lin
  • Patent number: 8669558
    Abstract: A pixel structure includes a thin film transistor device, an insulating layer disposed on the thin film transistor device, and a pixel electrode disposed on the insulating layer. The thin film transistor device includes a floating conductive pad disposed at one side of a semiconductor layer, and electrically connected to a source/drain electrode. The insulating layer has a first contact hole partially exposing the floating conductive pad. The pixel electrode is electrically connected to the floating conductive pad via the first contact hole.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: March 11, 2014
    Assignee: AU Optronics Corp.
    Inventors: Ching-Yang Liu, Wei-Hsiang Lin, Shu-Wei Chu, Hsiang-Chih Hsiao, Jhih-Jie Huang, Sai-Chang Liu, Yu-Hsing Liang
  • Publication number: 20120292622
    Abstract: A pixel structure includes a thin film transistor device, an insulating layer disposed on the thin film transistor device, and a pixel electrode disposed on the insulating layer. The thin film transistor device includes a floating conductive pad disposed at one side of a semiconductor layer, and electrically connected to a source/drain electrode. The insulating layer has a first contact hole partially exposing the floating conductive pad. The pixel electrode is electrically connected to the floating conductive pad via the first contact hole.
    Type: Application
    Filed: January 12, 2012
    Publication date: November 22, 2012
    Inventors: Ching-Yang Liu, Wei-Hsiang Lin, Shu-Wei Chu, Hsiang-Chih Hsiao, Jhih-Jie Huang, Sai-Chang Liu, Yu-Hsing Liang
  • Publication number: 20080145966
    Abstract: A method for fabricating organic thin-film transistors is disclosed. The method includes the steps of: providing a mold and a flexible substrate, wherein the mold comprises microstructures for defining source/drain electrode patterns on the substrate and at least an opening for feeding a solution material; forming an adhesive layer on the flexible substrate such that the mold is attached to the flexible substrate via the adhesive layer; feeding a solution material for forming source/drain electrodes via the opening of the mold and curing the solution material so as to form source/drain electrodes; removing the mold and forming a semiconductor layer on the source/drain electrodes; forming an insulator layer on the semiconductor layer and on the source/drain electrodes; forming a gate electrode on the insulator layer; and forming a protective layer for covering the organic thin-film transistor. The channel length of the thin film transistor is determined by the resolution of the microstructures of the mold.
    Type: Application
    Filed: October 24, 2007
    Publication date: June 19, 2008
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: Min-Hua Yang, Meng-Che Chuang, Wei-Hsiang Lin, Yu-Hsuan Chen, Chun-Hao Hsu, Wen-Hsin Hsiao, Chih-Kung Lee, Wen-Jong Wu