Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer, and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution is 1:0.01-1. Moreover, the second polymer solution is composed of a second hydrophilic solution.

Abstract: A three-dimensional sensing module includes a touch pressure sensing structure. The touch pressure sensing structure includes a first functional spacer layer, a first light-transmitting electrode layer coated on the first functional spacer layer, a second functional spacer layer coated on the first light-transmitting electrode layer, a second light-transmitting electrode layer coated on the second functional spacer layer, and a third functional spacer layer coated on the second light-transmitting electrode layer. Resistivities of the first, second, and third functional spacer layers are greater than resistivities of the first and second light-transmitting electrode layers.

Abstract: Structures and formation methods of a semiconductor structure are provided. The semiconductor structure includes an insulating layer covering a device region and an alignment mark region of a semiconductor substrate. A conductive feature is formed in the insulating layer and corresponds to the device region. An alignment mark structure is formed in the first insulating layer and corresponds to the alignment mark region. The alignment mark structure includes a first conductive layer, a second conductive layer covering the first conductive layer, and a first magnetic tunnel junction (MTJ) stack layer covering the second conductive layer. The first conductive layer and the conductive feature are made of the same material.

Abstract: A memory device includes a first word line and a second word line. A first portion of the first word line is formed in a first metal layer, a second portion of the first word line is formed in a second metal layer above the first metal layer, and a third portion of the first word line is formed in a third metal layer below the second metal layer. A first portion of the second word line is formed in the first metal layer. A second portion of the second word line is formed in the second metal layer. The first portion, the second portion, and the third portion of the first word line have sizes that are different from each other, and the first portion and the second portion of the second word line have sizes that are different from each other.

Abstract: A display device includes a light source, a waveguide element, a liquid crystal coupler, a first holographic optical element and a second holographic optical element. The light source is configured to emit light. The waveguide element is located above the light source. The liquid crystal coupler is located between the waveguide element and the light source. The first holographic optical element is located on a top surface of the waveguide element, in which the liquid crystal coupler is configured to change an incident angle that the light emits to the first holographic optical element. The second holographic optical element is located on the top surface of the waveguide element, and there is a first distance in a horizontal direction between the first holographic optical element and the second holographic optical element, in which the second holographic optical element is configured to diffract the light to the waveguide element below.

Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer; and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution is 1:0.01-1. Moreover, the second polymer solution consists of a second hydrophilic solution.

Abstract: An integrated circuit includes a first-type active-region structure, a second-type active-region structure on a substrate, and a plurality of gate-conductors. The integrated circuit also includes a backside horizontal conducting line in a backside first conducting layer below the substrate, a backside vertical conducting line in a backside second conducting layer below the backside first conducting layer, and a pin-connector for a circuit cell. The pin-connector is directly connected between the backside horizontal conducting line and the backside vertical conducting line. The backside horizontal conducting line extends across a vertical boundary of the circuit cell.

Abstract: A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.

Abstract: A memory device includes a first program line and a second program line. A first portion of the first program line is formed in a first conductive layer, and a second portion of the first program line is formed in a second conductive layer above the first conductive layer. A first portion of the second program line is formed in the first conductive layer. A second portion of the second program line is formed in the second conductive layer. A third portion of the second program line is formed in a third conductive layer above the second conductive layer. The first portion and the second portion of the first program line have sizes that are different from each other, and the first portion, the second portion and the third portion of the second program line have sizes that are different from each other.

Abstract: A spectrum measurement system includes a laser light source system, an optical signal receiving system and a beam splitting system. The laser light source system is configured to emit a laser output light beam to the object. The laser output light beam includes at least one of a first and a second peak-wavelength laser. After the object is radiated by the laser output light beam, the object generates a conversion beam. The conversion beam includes at least one of a first and a second spectral signals. The optical signal receiving system includes at least a first and a second signal receivers being respectively configured to receive the first and the second spectral signals. The beam splitting system provides a plurality of light exiting paths being configured to respectively transmit the first and the second spectral signals to the first and the second signal receivers.

Abstract: A spectrum measurement system includes a laser light source system, an optical signal receiving system and a beam splitting system. The laser light source system is configured to emit a laser output light beam to the object. The laser output light beam includes at least one of a first and a second peak-wavelength laser. After the object is radiated by the laser output light beam, the object generates a conversion beam. The conversion beam includes at least one of a first and a second spectral signals. The optical signal receiving system includes at least a first and a second signal receivers being respectively configured to receive the first and the second spectral signals. The beam splitting system provides a plurality of light exiting paths being configured to respectively transmit the first and the second spectral signals to the first and the second signal receivers.

Abstract: An Alzheimer's disease symptom evaluation system includes at least one sensing device, for a subject to wear, the sensing device detecting body movement of the subject during a balance test and a gait test and recording as a plurality of movement informations; a processing unit and a cloud unit, the processing unit being adapted for connecting to the sensing device to read the movement informations and to upload them to the cloud unit, the cloud unit including a database unit and an analyzing unit, a plurality of symptom model informations being stored in the database unit, the uploaded movement informations being calculated and processed by the analyzing unit, the analyzing unit scoring the movement informations by comparing with the symptom model informations in the database unit to give a plurality of evaluation scores, the evaluation scores being scored overall to provide an evaluation information.

Abstract: An integrated Raman spectrum measurement system and a modularized laser module are provided. The modularized laser module includes a laser emitter and an axis adjustment mechanism. The laser emitter is configured to emit a laser beam. The axis adjustment mechanism is connected to the laser emitter and configured to adjust at least two parameters of axis and orientation of the laser emitter. A beam splitter is disposed on the path of the laser beam. A signal collection unit is for collecting at least a part of a signal light from the beam splitter, wherein the signal light is converting by an object after receiving the part of the laser beam.

Abstract: An integrated Raman spectrum measurement system and a modularized laser module are provided. The modularized laser module includes a laser emitter and an axis adjustment mechanism. The laser emitter is configured to emit a laser beam. The axis adjustment mechanism is connected to the laser emitter and configured to adjust at least two parameters of axis and orientation of the laser emitter. A beam splitter is disposed on the path of the laser beam. A signal collection unit is for collecting at least a part of a signal light from the beam splitter, wherein the signal light is converting by an object after receiving the part of the laser beam.

Abstract: An X-ray imaging method including the following steps is provided. An X-ray source is provided, wherein the X-ray source includes a housing, a cathode, and an anode target. The housing has an end window. The cathode is disposed in the housing, and the anode target is disposed beside the end window. The cathode is caused to provide an electron beam. A portion of the electron beam hits at least a part of areas of the anode target to generate an X-ray and the X-ray is emitted out of the housing through the end window. The X-ray is caused to irradiate an object to generate X-ray image information. An image detector is used to receive the X-ray image information.

Abstract: An integrated Raman spectrum measurement system and a modularized laser module are provided. The modularized laser module includes a laser emitter and an axis adjustment mechanism. The laser emitter is configured to emit a laser beam. The axis adjustment mechanism is connected to the laser emitter and configured to adjust at least two parameters of axis and orientation of the laser emitter. A beam splitter is disposed on the path of the laser beam. A signal collection unit is for collecting at least a part of a signal light from the beam splitter, wherein the signal light is converting by an object after receiving the part of the laser beam.

Abstract: An imaging system used for material discrimination of an objet is provided. The imaging system includes an X-ray source and an imaging sensor. The X-ray source generates multienergy polychromatic X-ray, wherein there is an integral-multiple relationship between the multi-energy-band of the X-ray. The object is placed between the X-ray source and the imaging sensor. The X-ray is transmitted toward and imaged by the imaging sensor through the object. An imaging multi-energy-band of the imaging sensor corresponds to the multi-energy-band of the X-ray.

Abstract: An X-ray imaging method including the following steps is provided. An X-ray source is provided, wherein the X-ray source includes a housing, a cathode, and an anode target. The housing has an end window. The cathode is disposed in the housing, and the anode target is disposed beside the end window. The cathode is caused to provide an electron beam. A portion of the electron beam hits at least a part of areas of the anode target to generate an X-ray and the X-ray is emitted out of the housing through the end window. The X-ray is caused to irradiate an object to generate X-ray image information. An image detector is used to receive the X-ray image information. Besides, an X-ray source is also provided.

Abstract: An imaging system used for material discrimination of an objet is provided. The imaging system includes an X-ray source and an imaging sensor. The X-ray source generates multienergy polychromatic X-ray, wherein there is an integral-multiple relationship between the multi-energy-band of the X-ray. The object is placed between the X-ray source and the imaging sensor. The X-ray is transmitted toward and imaged by the imaging sensor through the object. An imaging multi-energy-band of the imaging sensor corresponds to the multi-energy-band of the X-ray.