Pixel structure of in-plane switching liquid crystal display device
A pixel structure of an in-plane switching liquid crystal display device includes a glass substrate, a data line, a gate line, a transistor and a common electrode. The data line, the gate line and the transistor are located on the glass substrate. The transistor includes a gate electrode, a source electrode and a drain electrode. The common electrode has an opening disposed directly over the data line, the gate line and the transistor, wherein the opening is wider than the data line.
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This application is a divisional of U.S. patent application Ser. No. 10/655,138, filed Sep. 4, 2003, which claims priority from Taiwan patent application no. 92104329, filed Feb. 27, 2003. The subject matters of the above-identified applications are incorporated by reference herein.
BACKGROUND OF THE INVENTION1. Field of Invention
The present invention relates to a pixel structure of a liquid crystal display device. More particularly, the present invention relates to a pixel structure of an in-plane switching liquid crystal display device.
2. Description of Related Art
Liquid crystal display (LCD) has so many advantages, including high picture quality, small volume, light weight, low driving voltage and low power consumption, that LCDs are widely applied in electronic products such as medium or small-sized portable televisions, mobile phones, videos, notebooks, monitors for desktop computers and projection-type televisions. Therefore, as time goes by, LCDs gradually replace present cathode ray tube (CRT) monitors.
To compete with CRT monitors, LCDs are developed in the trend of wide viewing angle and high speed of response. For example, the developed in-plane switching (IPS) liquid crystal display device just provides the advantage of wide viewing angle. In an IPS liquid crystal display device, the common electrode is disposed over the gate line and the data line to provide larger aperture ratio of the device, thereby increasing the brightness of the device.
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Although U.S. Pat. No. 6,069,678 has provided a solution for an IPS liquid crystal display device manufactured from a top gate transistor. No solution is provided for an IPS liquid crystal display device manufactured from a bottom gate transistor. The IPS liquid crystal display device manufactured from a top gate transistor can merely lower the generated coupling capacitance between the common electrode and the data line, where the generated coupling capacitance between the common electrode and the gate line can not be lowered.
SUMMARY OF THE INVENTIONFor the forgoing reasons, it is therefore an objective of the present invention to provide a pixel structure of an in-plane switching liquid crystal display device.
In one aspect, the present invention provides a pixel structure of an in-plane switching liquid crystal display device. The pixel structure comprises a glass substrate, a data line and a common electrode. The data line is disposed over the glass substrate. The common electrode is disposed over the data line. The common electrode has an opening located directly over the data line, wherein the opening is wider than the data line.
In another aspect, the present invention provides a pixel structure of an in-plane switching liquid crystal display device. The pixel structure comprises a glass substrate, a gate line and a common electrode. The gate line is disposed over the glass substrate. The common electrode is disposed over the gate line. The common electrode has an opening located directly over said gate line.
In still another aspect, the present invention provides a pixel structure of an in-plane switching liquid crystal display device. The pixel structure comprises a glass substrate, a transistor and a common electrode. The transistor, consisting essentially of a gate electrode, a source electrode and a drain electrode, is disposed over the glass substrate. The common electrode is disposed over the transistor. The common electrode has an opening located directly over the transistor.
According to the present invention, an opening is formed in the common electrode directly over the data line, the gate line and the transistor, wherein the opening is wider than the data line. Therefore, the generated coupling capacitance between the common electrode and the data line, the gate line and the transistor can be lowered.
It is to be understood that both the foregoing general description and the following detailed description are examples only, and are intended to provide further explanation of the invention as claimed.
BRIEF DESCRIPTION OF THE DRAWINGSThe accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings:
Reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
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It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents.
Claims
1. A pixel structure of an in-plane switching liquid crystal display device, said pixel structure comprising:
- a glass substrate;
- a transistor disposed over said glass substrate, said transistor consisting essentially of a gate electrode, a source electrode and a drain electrode; and
- a common electrode disposed over said transistor, said common electrode having an opening located directly over said transistor.
2. The pixel structure according to claim 1, wherein said pixel structure further comprises an organic layer disposed between said transistor and said common electrode.
3. The pixel structure according to claim 2, wherein said organic layer is made of photocured acrylic type material.
4. The pixel structure according to claim 1, wherein said transistor is a bottom gate transistor.
5. The pixel structure according to claim 1, wherein said pixel structure further comprises a black matrix disposed over said common electrode.
6. The pixel structure according to claim 1, further comprising a gate line disposed on said glass substrate, wherein said common electrode is disposed over said gate line with said opening of said common electrode located directly over said gate line.
7. The pixel structure according to claim 6, wherein said gate line is made of a material selected from a group consisting of aluminum-neodymium alloy and molybdenum-tungsten alloy.
8. The pixel structure according to claim 1, further comprising:
- a data line disposed over said glass substrate; and
- a pair of data line fringe field shielding elements respectively disposed at a position adjacent to a lateral side of said data line and on said glass substrate.
9. The pixel structure according to claim 8, wherein said common electrode is disposed over said data line with an opening of said common electrode located directly over said data line.
10. The pixel structure according to claim 8, wherein said data line fringe field shielding element is made of a material selected from a group consisting of aluminum-neodymium alloy and molybdenum-tungsten alloy.
11. The pixel structure according to claim 8, wherein a width of said data line fringe field shielding element is about 0.1 mm to about 30 mm.
Type: Application
Filed: Dec 19, 2005
Publication Date: May 4, 2006
Applicant: HannStar Display Corporation (Taipei)
Inventors: Po-Sheng Shih (Hsinchu City), Wei-Hsin Wang (Hsinchu City)
Application Number: 11/311,737
International Classification: G02F 1/1343 (20060101);