Abstract: A disclosed system is configured to bond a chip to a substrate and includes a chip processing subsystem that is configured to receive the chip and to expose the chip to a first plasma, and a substrate processing subsystem that is configured to receive the substrate and to expose the substrate to a second plasma. The system further includes a bonding subsystem that is configured to align the chip with the substrate, to force the chip and the substrate into direct mechanical contact with one another by application of a compressive force, and to apply heat to at least one of the chip or the substrate. Application of the compressive force and the heat thereby bonds the chip to the substrate. The first and second plasmas may include H2/N2, H2/Ar, H2/He, NH3/N2, NH3/Ar, or NH3/He and the chip and substrate may be maintained in a low oxygen environment.

Abstract: A method for forming a package structure is provided. The method includes placing a first package component on a chuck table; aligning a second package component with the first package component using a nozzle, wherein the nozzle includes a plurality of first holes communicating with a plurality of vacuum tubes and includes a plurality of second holes communicating with the first holes via a first trench and a second trench, wherein the first trench is located higher than the second trench in the nozzle; and bonding the first package component and the second package component over the chuck table to form the package structure.

Abstract: A semiconductor package includes a package substrate including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness, and an interposer module mounted on the upper surface layer of the package substrate in the second surface area. The semiconductor package may also include an interposer including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness. The semiconductor package may also include an printed circuit board substrate including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness.

Abstract: A method for forming a package structure is provided. The method includes transporting a first package component into a processing chamber. The method includes positioning the first package component on a chuck table. The method includes using the chuck table to heat the first package component. The method includes holding a second package component with a bonding head. The bonding head communicates with a plurality of vacuum devices via a plurality of vacuum tubes, and the vacuum devices each operate independently. The method also includes bonding the first package component and the second package component in the processing chamber to form the package structure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes an interconnection structure over a semiconductor substrate and a conductive pillar over the interconnection structure. The conductive pillar has a protruding portion extending towards the semiconductor substrate from a lower surface of the conductive pillar. The semiconductor device structure also includes an upper conductive via between the conductive pillar and the interconnection structure and a lower conductive via between the upper conductive via and the interconnection structure. The lower conductive via is electrically connected to the conductive pillar through the upper conductive via. The conductive pillar extends across opposite sidewalls of the upper conductive via and opposite sidewalls of the lower conductive via. A top view of an entirety of the second conductive via is separated from a top view of an entirety of the protruding portion.

Abstract: A disclosed system is configured to bond a chip to a substrate and includes a chip processing subsystem that is configured to receive the chip and to expose the chip to a first plasma, and a substrate processing subsystem that is configured to receive the substrate and to expose the substrate to a second plasma. The system further includes a bonding subsystem that is configured to align the chip with the substrate, to force the chip and the substrate into direct mechanical contact with one another by application of a compressive force, and to apply heat to at least one of the chip or the substrate. Application of the compressive force and the heat thereby bonds the chip to the substrate. The first and second plasmas may include H2/N2, H2/Ar, H2/He, NH3/N2, NH3/Ar, or NH3/He and the chip and substrate may be maintained in a low oxygen environment.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a conductive feature over a substrate and an insulating layer over the conductive feature. The semiconductor device structure also includes a conductive pillar over the conductive feature and the insulating layer. The conductive pillar has a protruding connecting portion and a protruding locking portion. The protruding connecting portion extends from a lower surface of the conductive pillar towards the conductive feature and is electrically connected to the conductive feature. The protruding locking portion extends from the lower surface of the conductive pillar towards the substrate and extends into the insulating layer. The protruding connecting portion is closer to the substrate than the protruding locking portion. A bottom of the protruding locking portion is wider than a bottom of the protruding connecting portion.

Abstract: In a method of forming a heat dissipating structure for a semiconductor chip, a soldering material is disposed on a top surface of the semiconductor chip. A first region of metal plating is formed on a surface of a lid. The first region has a first width and a first length. The first width is larger than a second width of the top surface of the semiconductor chip and the first length is larger than a second length of the top surface of the semiconductor chip. The lid is placed over the semiconductor chip so that the first region of metal plating of the lid is disposed over the soldering material to bond the lid to the semiconductor chip by a soldering material layer having an inverted trapezoidal shape between the lid and the top surface of the semiconductor chip.

Abstract: A semiconductor package includes a package substrate including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness, and an interposer module mounted on the upper surface layer of the package substrate in the second surface area. The semiconductor package may also include an interposer including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness. The semiconductor package may also include an printed circuit board substrate including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness.

Abstract: A semiconductor package includes a package substrate a package substrate including: a substrate core; an upper redistribution layer disposed on a first side of the substrate core; and a lower redistribution layer disposed on an opposing second side of the substrate core; a semiconductor device vertically stacked on and electrically connected to the package substrate; and an upper reinforcement layer embedded in the upper redistribution layer between the semiconductor device and the substrate core, the upper reinforcement layer having a Young's modulus that is higher than a Young's modulus of the upper redistribution layer.

Abstract: In a method of forming a heat dissipating structure for a semiconductor chip, a soldering material is disposed on a top surface of the semiconductor chip. A first region of metal plating is formed on a surface of a lid. The first region has a first width and a first length. The first width is larger than a second width of the top surface of the semiconductor chip and the first length is larger than a second length of the top surface of the semiconductor chip. The lid is placed over the semiconductor chip so that the first region of metal plating of the lid is disposed over the soldering material to bond the lid to the semiconductor chip by a soldering material layer having an inverted trapezoidal shape between the lid and the top surface of the semiconductor chip.

Abstract: A disclosed system is configured to bond a chip to a substrate and includes a chip processing subsystem that is configured to receive the chip and to expose the chip to a first plasma, and a substrate processing subsystem that is configured to receive the substrate and to expose the substrate to a second plasma. The system further includes a bonding subsystem that is configured to align the chip with the substrate, to force the chip and the substrate into direct mechanical contact with one another by application of a compressive force, and to apply heat to at least one of the chip or the substrate. Application of the compressive force and the heat thereby bonds the chip to the substrate. The first and second plasmas may include H2/N2, H2/Ar, H2/He, NH3/N2, NH3/Ar, or NH3/He and the chip and substrate may be maintained in a low oxygen environment.

Abstract: A package includes a first package component; a second package component bonded to the first package component by a first plurality of solder connectors; and a first plurality of spacer connectors extending from the first package component to the second package component. A diameter of a spacer connector the first plurality of spacer connectors is larger than a height of a solder connector of the first plurality of solder connectors, and the first plurality of spacer connectors comprises a different material than the first plurality of solder connectors.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes an interconnection structure and a conductive pillar over the interconnection structure. The conductive pillar has a protruding portion extending towards the interconnection structure, and an upper portion of the conductive pillar is wider than the protruding portion. The semiconductor device structure also includes an upper conductive via positioned vertically between the conductive pillar and the interconnection structure. The semiconductor device structure further includes a lower conductive via positioned vertically between the upper conductive via and the interconnection structure. In a top view, the conductive pillar extends across the upper conductive via and the lower conductive via. In the top view, the upper conductive via is spaced apart from the protruding portion.

Abstract: A chip structure is provided. The chip structure includes a substrate. The chip structure includes a first conductive line over the substrate. The chip structure includes an insulating layer over the substrate and the first conductive line. The chip structure includes a conductive pillar over the insulating layer. The chip structure includes a solder bump on the conductive pillar. The solder bump is in direct contact with the conductive pillar.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a first conductive structure over the substrate. The first conductive structure has a first protruding portion extending towards the substrate from a lower surface of the first conductive structure. The semiconductor device structure also includes a second conductive structure over the substrate. The second conductive structure is substantially as wide as the first conductive structure. The second conductive structure has a second protruding portion extending towards the substrate from a lower surface of the second conductive structure. The first conductive structure is closer to a center point of the substrate than the second conductive structure, and the second protruding portion and the first protruding portion have different widths.

Abstract: A semiconductor die including mechanical-stress-resistant bump structures is provided. The semiconductor die includes dielectric material layers embedding metal interconnect structures, a connection pad-and-via structure, and a bump structure including a bump via portion and a bonding bump portion. The entirety of a bottom surface of the bump via portion is located within an area of a horizontal top surface of a pad portion of the connection pad-and-via structure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first conductive structure over the semiconductor substrate. The first conductive structure has a first protruding portion extending towards the semiconductor substrate from a lower surface of the first conductive structure. The semiconductor device structure also includes a second conductive structure over the semiconductor substrate. The second conductive structure is substantially as wide as the first conductive structure, and the second conductive structure has a second protruding portion extending towards the semiconductor substrate from a lower surface of the second conductive structure. The first conductive structure is closer to a center point of the semiconductor substrate than the second conductive structure.