Abstract: An example computer-implemented method for synchronously programming multiple memory modules includes sending one or more instructions to each of the memory modules to perform a first data operation associated with a computer software update. In response to determining that each of the memory modules have received the first instructions to perform the first data operation, time is spent waiting for the first data operation to be completed at each of the memory modules. One or more instructions are also sent to each of the memory modules to perform a second data operation associated with the computer software update. In response to determining that each of the memory modules have received the second instructions to perform the second data operation, time is spent waiting for the second data operation to be completed at each of the memory modules. Furthermore, the data is validated across the memory modules.

Abstract: A semiconductor device includes a substrate, an interconnect structure, and conductive vias. The substrate has a first side, a second side and a sidewall connecting the first side and the second side, wherein the sidewall includes a first planar sidewall of a first portion of the substrate, a second planar sidewall of a second portion of the substrate and a curved sidewall of a third portion of the substrate, where the first planar sidewall is connected to the second planar sidewall through the curved sidewall. The interconnect structure is located on the first side of the substrate, where a sidewall of the interconnect structure is offset from the second planar sidewall. The conductive vias are located on the interconnect structure, where the interconnect structure is located between the conductive vias and the substrate.

Abstract: According to an exemplary embodiment, a substrate having a first area and a second area is provided. The substrate includes a plurality of pads. Each of the pads has a pad size. The pad size in the first area is larger than the pad size in the second area.

Abstract: A semiconductor device includes a substrate, an interconnect structure, and conductive vias. The substrate has a first side, a second side and a sidewall connecting the first side and the second side, wherein the sidewall includes a first planar sidewall of a first portion of the substrate, a second planar sidewall of a second portion of the substrate and a curved sidewall of a third portion of the substrate, where the first planar sidewall is connected to the second planar sidewall through the curved sidewall. The interconnect structure is located on the first side of the substrate, where a sidewall of the interconnect structure is offset from the second planar sidewall. The conductive vias are located on the interconnect structure, where the interconnect structure is located between the conductive vias and the substrate.

Abstract: An example of the present disclosure includes a packaging box, comprising a first section including a first aperture to receive a portion of a writing device, and a second section including a second aperture to receive a remainder of the writing device. The packaging box further includes a hinge mechanism coupling the first section to the second section, wherein the first section and second section are rotatable about the hinge mechanism. The packaging box also includes a tip remover including a surface to remove a tip of the writing device responsive to application of a force.

Abstract: Provided are a package structure and a method of forming the same. The method includes providing a first package having a plurality of first dies and a plurality of second dies therein; performing a first sawing process to cut the first package into a plurality of second packages, wherein one of the plurality of second packages comprises three first dies and one second die; and performing a second sawing process to remove the second die of the one of the plurality of second packages, so that a cut second package is formed into a polygonal structure with the number of nodes greater than or equal to 5.

Abstract: A package includes a first package component; a second package component bonded to the first package component by a first plurality of solder connectors; and a first plurality of spacer connectors extending from the first package component to the second package component. A diameter of a spacer connector the first plurality of spacer connectors is larger than a height of a solder connector of the first plurality of solder connectors, and the first plurality of spacer connectors comprises a different material than the first plurality of solder connectors.

Abstract: A system and method for a configurable computer system architecture is disclosed. The computer system architecture includes a power distribution board including a configuration identification strapping. The architecture includes a first node having a first processor and a first baseboard management controller (BMC) coupled to the power distribution board via an internal communication channel. A second node, identical to the first node, has a second processor and a second BMC coupled to the power distribution board via the internal communication channel. The configuration identification strapping is one of a first configuration readable by the first and second BMCs with two nodes operating as independent devices, or a second configuration readable by the first and second BMCs with two nodes operating as a single device. The first BMC serves as a master BMC and the second BMC serves as a slave BMC in the second configuration.

Abstract: A light-emitting sphere includes a light source device, a light source bracket, a light-transmissive housing, and a light-transmissive elastic layer. The light source device is fixed to the light source bracket. The light source bracket is fixed inside the light-transmissive housing, the light-transmissive housing completely covers the light source device and the light source bracket, a surface of the light-transmissive housing does not have any opening, and an interior of the light-transmissive housing is in an air-tight state. The light-transmissive elastic layer is formed on the surface of the light-transmissive housing.

Abstract: A semiconductor package includes a substrate, a semiconductor die, a lid, and an adhesive layer. The semiconductor die is attached to the substrate. The lid is over the semiconductor die and the substrate. The adhesive layer is sandwiched between the lid and the semiconductor die. The adhesive layer includes a metallic thermal interface material (TIM) layer and a polymeric TIM layer adjacent to the metallic TIM layer. The polymeric TIM layer is located on corners of the semiconductor die from a top view.

Abstract: A semiconductor structure includes a die, a molding surrounding the die, and a polymer over the die and the molding. The die has a top surface. The molding has a top surface. The polymer has a first bottom surface contact the die and a second surface contacting the molding. The first bottom surface is at a level substantially same as the second bottom surface.

Abstract: A bonded assembly may be formed by: disposing a packaging substrate having substrate-side bonding structures over a transparent plate; heating the packaging substrate using radiative heating in which a radiative heating source provides radiation to a bottom surface of the packaging substrate through the transparent plate; attaching a semiconductor die having die-side bonding structures to a bottom of a thermocompressive bonding head; bringing the semiconductor die and the packaging substrate to indirect contact with each other with an array of solder material portions therebetween; and bonding the semiconductor die to the packaging substrate by reflowing and solidifying the solder material portions.

Abstract: A semiconductor package structure includes first via structures formed through a core substrate. The structure also includes an interposer embedded in the core substrate between the first via structures. The interposer includes second via structures formed through a silicon interposer substrate. The structure also includes a first redistribution layer structure formed over the core substrate. The structure also includes a second redistribution layer structure formed under the core substrate. A coefficient of thermal expansion of the silicon interposer substrate is lower than a coefficient of thermal expansion of the core substrate.

Abstract: A method of manufacturing a semiconductor structure includes receiving a die comprising a top surface and a sacrificial layer covering the top surface; disposing a molding surrounding the die; removing the sacrificial layer from the die; disposing a polymer over the die and the molding, wherein the polymer has a first bottom surface contacting the die and a second bottom surface contacting the molding, and the first bottom surface is at a level substantially same as the second bottom surface.

Abstract: A system and method for applying an underfill is provided. An embodiment comprises applying an underfill to a substrate and patterning the underfill. Once patterned other semiconductor devices, such as semiconductor dies or semiconductor packages may then be attached to the substrate through the underfill, with electrical connections from the other semiconductor devices extending into the pattern of the underfill.

Abstract: A chip structure is provided. The chip structure includes a substrate. The chip structure includes a first conductive line over the substrate. The chip structure includes an insulating layer over the substrate and the first conductive line. The chip structure includes a conductive pillar over the insulating layer. The chip structure includes a solder bump on the conductive pillar. The solder bump is in direct contact with the conductive pillar.

Abstract: A method includes forming a reconstructed package substrate, which includes placing a plurality of substrate blocks over a carrier, encapsulating the plurality of substrate blocks in an encapsulant, planarizing the encapsulant and the plurality of substrate blocks to reveal redistribution lines in the plurality of substrate blocks, and forming a redistribution structure overlapping both of the plurality of substrate blocks and encapsulant. A package component is bonded over the reconstructed package substrate.

Abstract: A semiconductor package includes a substrate, a semiconductor die, a lid, and an adhesive layer. The semiconductor die is attached to the substrate. The lid is over the semiconductor die and the substrate. The adhesive layer is sandwiched between the lid and the semiconductor die. The adhesive layer includes a metallic thermal interface material (TIM) layer and a polymeric TIM layer adjacent to the metallic TIM layer. The polymeric TIM layer is located on corners of the semiconductor die from a top view.

Abstract: Provided are a package structure and a method of forming the same. The method includes providing a first package having a plurality of first dies and a plurality of second dies therein; performing a first sawing process to cut the first package into a plurality of second packages, wherein one of the plurality of second packages comprises three first dies and one second die; and performing a second sawing process to remove the second die of the one of the plurality of second packages, so that a cut second package is formed into a polygonal structure with the number of nodes greater than or equal to 5.

Abstract: A semiconductor package includes an interposer module on a package substrate, a thermal interface material (TIM) layer on the interposer module, a TIM layer protection structure on a side surface of the TIM layer and a side surface of the interposer module, and a package lid on the interposer module, the TIM layer and the TIM layer protection structure. A method of forming the semiconductor package may include mounting an interposer module on a package substrate, locating a thermal interface material (TIM) layer on the interposer module, locating a package lid on the interposer module and the TIM layer, and forming a TIM layer protection structure on a side surface of the TIM layer and a side surface of the interposer module, through a filling hole in the package lid.