Abstract: In a method of forming a heat dissipating structure for a semiconductor chip, a soldering material is disposed on a top surface of the semiconductor chip. A first region of metal plating is formed on a surface of a lid. The first region has a first width and a first length. The first width is larger than a second width of the top surface of the semiconductor chip and the first length is larger than a second length of the top surface of the semiconductor chip. The lid is placed over the semiconductor chip so that the first region of metal plating of the lid is disposed over the soldering material to bond the lid to the semiconductor chip by a soldering material layer having an inverted trapezoidal shape between the lid and the top surface of the semiconductor chip.

Abstract: A disclosed system is configured to bond a chip to a substrate and includes a chip processing subsystem that is configured to receive the chip and to expose the chip to a first plasma, and a substrate processing subsystem that is configured to receive the substrate and to expose the substrate to a second plasma. The system further includes a bonding subsystem that is configured to align the chip with the substrate, to force the chip and the substrate into direct mechanical contact with one another by application of a compressive force, and to apply heat to at least one of the chip or the substrate. Application of the compressive force and the heat thereby bonds the chip to the substrate. The first and second plasmas may include H2/N2, H2/Ar, H2/He, NH3/N2, NH3/Ar, or NH3/He and the chip and substrate may be maintained in a low oxygen environment.

Abstract: A computing system includes a processing unit and a network device. The processing unit includes a first baseboard management controller (BMC), an external network interface coupled to the first BMC, and a first internal network interface coupled to the first BMC. The network device includes a second BMC and a second internal network interface coupled to the second BMC. The second internal network interface of the network device is connected to the first internal network interface of the processing unit. The first BMC is configured to transfer data between an external network and the second BMC via (i) the external network interface, (ii) the first internal network interface, and (iii) the second internal network interface.

Abstract: A method includes depositing a plurality of layers on a substrate, patterning a first mask overlying the plurality of layers, and performing a first etching process on the plurality of layers using the first mask. The method also includes forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers, and removing the polymer material. The method also includes performing a second etching process on the plurality of layers using the remaining first mask, where after the second etching process terminates a combined sidewall profile of the plurality of layers comprises a first portion and a second portion, and a first angle of the first portion and a second angle of the second portion are different to each other.

Abstract: A system and method for applying an underfill is provided. An embodiment comprises applying an underfill to a substrate and patterning the underfill. Once patterned other semiconductor devices, such as semiconductor dies or semiconductor packages may then be attached to the substrate through the underfill, with electrical connections from the other semiconductor devices extending into the pattern of the underfill.

Abstract: A method includes depositing a plurality of layers on a substrate, patterning a first mask overlying the plurality of layers, and performing a first etching process on the plurality of layers using the first mask. The method also includes forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers, and removing the polymer material. The method also includes performing a second etching process on the plurality of layers using the remaining first mask, where after the second etching process terminates a combined sidewall profile of the plurality of layers comprises a first portion and a second portion, and a first angle of the first portion and a second angle of the second portion are different to each other.

Abstract: In some examples, an electronic device includes a tip pressure sensor to capture tip pressure data based on a writing surface. In some examples, the electronic device includes a processor to produce a classification of the writing surface based on the tip pressure data via a machine learning model. In some examples, the electronic device may include a haptic device to control haptic feedback based on the classification.

Abstract: In some examples of the present disclosure, a non-transitory memory resource storing machine-readable instructions can cause a processing resource of a computing device to: instruct a first microphone of the computing device and a second microphone of a peripheral device to capture an audio signal generated by an audio source, determine a location of the second microphone based on a proximity of the peripheral device to the audio source, and alter a sound property of the audio signal based on a location of the first microphone and the location of the second microphone.

Abstract: Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a molding compound disposed around the integrated circuit die, and an interconnect structure disposed over the integrated circuit die and the molding compound. The molding compound is thicker than the integrated circuit die.

Abstract: A method and system to ensure correct firmware image execution in a computer system. The computer system has a processor executing a basic input/output system (BIOS) and a baseboard management controller (BMC). A first flash memory device is coupled to the processor storing a BIOS firmware image and a project name. A second flash memory device is coupled to the BMC storing a BMC firmware image and the project name. A programmable logic device is coupled to the first and second flash memory devices. The programmable logic device including a non-volatile memory storing a project name. The programmable logic device is configured to execute a Platform Firmware Resilience routine to compare the project name of the BIOS firmware image and the project name of the BMC firmware image with the stored project name before starting the BMC or executing the BIOS firmware image by the processor.

Abstract: A computing system includes a processing unit and a network device. The processing unit includes a first baseboard management controller (BMC), an external network interface coupled to the first BMC, and a first internal network interface coupled to the first BMC. The network device includes a second BMC and a second internal network interface coupled to the second BMC. The second internal network interface of the network device is connected to the first internal network interface of the processing unit. The first BMC is configured to transfer data between an external network and the second BMC via (i) the external network interface, (ii) the first internal network interface, and (iii) the second internal network interface.

Abstract: An example approach to detect inputs using a sensor is disclosed. In an example, an electronic device may include a housing, an optical sensor to detect an input from a detection zone, and a rotatable housing mounted to a side of the housing. The optical sensor is disposed in the rotatable housing. The electronic device may also include a direction sensor to detect an orientation of the rotatable housing relative to the housing.

Abstract: A semiconductor package structure includes a plurality of first dies spaced from each other, a molding layer between the first dies, a second die over the plurality of first dies and the molding layer, and an adhesive layer between the plurality of first dies and the second die, and between the molding layer and the second die. A first interface between the adhesive layer and the molding layer and a second interface between the adhesive layer and the plurality of first dies are at different levels.

Abstract: Package structures and methods for forming the same are provided. The method includes forming a passivation layer having an opening and forming a first seed layer in the opening. The method further includes filling the opening with a conductive layer over the first seed layer and bonding an integrated circuit die to the conductive layer over a first side of the passivation layer. The method further includes removing a portion of the first seed layer to expose a top surface of the conductive layer and to partially expose a first sidewall of the passivation layer from a second side of the passivation layer and forming a second seed layer over the top surface of the conductive layer and over the first sidewall of the passivation layer.

Abstract: In some examples, an electronic device includes a tip pressure sensor to capture tip pressure data based on a writing surface. In some examples, the electronic device includes a processor to produce a classification of the writing surface based on the tip pressure data via a machine learning model. In some examples, the electronic device may include a haptic device to control haptic feedback based on the classification.

Abstract: Provided are a package structure and a method of forming the same. The method includes providing a first package having a plurality of first dies and a plurality of second dies therein; performing a first sawing process to cut the first package into a plurality of second packages, wherein one of the plurality of second packages comprises three first dies and one second die; and performing a second sawing process to remove the second die of the one of the plurality of second packages, so that a cut second package is formed into a polygonal structure with the number of nodes greater than or equal to 5.

Abstract: A semiconductor die including mechanical-stress-resistant bump structures is provided. The semiconductor die includes dielectric material layers embedding metal interconnect structures, a connection pad-and-via structure, and a bump structure including a bump via portion and a bonding bump portion. The entirety of a bottom surface of the bump via portion is located within an area of a horizontal top surface of a pad portion of the connection pad-and-via structure.

Abstract: A semiconductor device includes a substrate, an interconnect structure, and conductive vias. The substrate has a first side, a second side and a sidewall connecting the first side and the second side, wherein the sidewall includes a first planar sidewall of a first portion of the substrate, a second planar sidewall of a second portion of the substrate and a curved sidewall of a third portion of the substrate, where the first planar sidewall is connected to the second planar sidewall through the curved sidewall. The interconnect structure is located on the first side of the substrate, where a sidewall of the interconnect structure is offset from the second planar sidewall. The conductive vias are located on the interconnect structure, where the interconnect structure is located between the conductive vias and the substrate.

Abstract: A semiconductor package structure includes first via structures formed through a core substrate. The structure also includes an interposer embedded in the core substrate between the first via structures. The interposer includes second via structures formed through an interposer substrate. The structure also includes a first redistribution layer structure formed over the core substrate. The structure also includes a second redistribution layer structure formed under the core substrate. The structure also includes a first encapsulating layer formed between a sidewall of the interposer and a sidewall of the core substrate.

Abstract: A chip structure is provided. The chip structure includes a substrate. The chip structure includes a first conductive line over the substrate. The chip structure includes an insulating layer over the substrate and the first conductive line. The chip structure includes a conductive pillar over the insulating layer. The conductive pillar is formed in one piece, the conductive pillar has a lower surface, a protruding connecting portion, and a protruding locking portion, the protruding connecting portion protrudes from the lower surface and passes through the insulating layer and is in direct contact with the first conductive line, the protruding locking portion protrudes from the lower surface and is embedded in the insulating layer. The chip structure includes a solder bump on the conductive pillar. The solder bump is in direct contact with the conductive pillar.