Patents by Inventor Wei-Jung Lin
Wei-Jung Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190287851Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.Type: ApplicationFiled: March 14, 2018Publication date: September 19, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Pin-Wen CHEN, Chia-Han LAI, Chih-Wei CHANG, Mei-Hui FU, Ming-Hsing TSAI, Wei-Jung LIN, Yu Shih WANG, Ya-Yi CHENG, I-Li CHEN
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Patent number: 10418279Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.Type: GrantFiled: June 20, 2017Date of Patent: September 17, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Hsien Huang, Hong-Mao Lee, Hsien-Lung Yang, Yu-Kai Chen, Wei-Jung Lin
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Publication number: 20190273147Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.Type: ApplicationFiled: March 1, 2018Publication date: September 5, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Wen CHENG, Cheng-Tung LIN, Chih-Wei CHANG, Hong-Mao LEE, Ming-Hsing TSAI, Sheng-Hsuan LIN, Wei-Jung LIN, Yan-Ming TSAI, Yu-Shiuan WANG, Hung-Hsu CHEN, Wei-Yip LOH, Ya-Yi CHENG
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Publication number: 20190273042Abstract: A semiconductor device and method of forming the same that includes forming a dielectric layer over a substrate and patterning a contact region in the dielectric layer, the contact region having side portions and a bottom portion that exposes the substrate. The method can also include forming a dielectric barrier layer in the contact region to cover the side portions and the bottom portion, and etching the dielectric barrier layer to expose the substrate. Subsequently, a conductive layer can be formed to cover the side portions and the bottom portion of the contact region and the conductive layer can be annealed to form a silicide region in the substrate beneath the bottom portion of the contact region, and the conductive layer can then be selectively removed on the side portions of the contact region.Type: ApplicationFiled: March 1, 2018Publication date: September 5, 2019Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yu-Wen Cheng, Wei-Yip Loh, Yu-Hsiang Liao, Sheng-Hsuan Lin, Hong-Mao Lee, Chun-I Tsai, Ken-Yu Chang, Wei-Jung Lin, Chih-Wei Chang, Ming-Hsing Tsai
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Patent number: 10361120Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.Type: GrantFiled: January 25, 2018Date of Patent: July 23, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu Shih Wang, Chun-I Tsai, Shian Wei Mao, Ken-Yu Chang, Ming-Hsing Tsai, Wei-Jung Lin
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Publication number: 20190164824Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.Type: ApplicationFiled: November 29, 2018Publication date: May 30, 2019Inventors: Yu Shih Wang, Chun-I Tsai, Shian Wei Mao, Ken-Yu Chang, Ming-Hsing Tsai, Wei-Jung Lin
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Publication number: 20190164823Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.Type: ApplicationFiled: January 25, 2018Publication date: May 30, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu Shih WANG, Chun-I TSAI, Shian Wei MAO, Ken-Yu CHANG, Ming-Hsing TSAI, Wei-Jung LIN
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Patent number: 10283359Abstract: Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.Type: GrantFiled: April 17, 2017Date of Patent: May 7, 2019Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chi-Yuan Chen, Li-Ting Wang, Teng-Chun Tsai, Chun-I Tsai, Wei-Jung Lin, Huang-Yi Huang, Cheng-Tung Lin, Hong-Mao Lee
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Patent number: 9978583Abstract: Methods of forming conductive structures and the conductive structures are disclosed. A method includes forming an opening in a dielectric layer over a substrate, performing a cleaning process on the dielectric layer with the opening, forming a nucleation layer in the opening, etching the nucleation layer in the opening, and forming a conductive material in the opening and on the nucleation layer after the etching. An upper portion of the opening is distal from the substrate, and a lower portion of the opening is proximate the substrate. After the etching, a thickness of an upper portion of the nucleation layer in the upper portion of the opening is less than a thickness of a lower portion of the nucleation layer in the lower portion of the opening.Type: GrantFiled: April 6, 2017Date of Patent: May 22, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-I Tsai, Chi-Yuan Chen, Wei-Jung Lin, Chia-Han Lai
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Publication number: 20170345765Abstract: A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.Type: ApplicationFiled: August 14, 2017Publication date: November 30, 2017Inventors: Hong-Mao Lee, Huicheng Chang, Chia-Han Lai, Chi-Hsuan Ni, Cheng-Tung Lin, Huang-Yi Huang, Chi-Yuan Chen, Li-Ting Wang, Teng-Chun Tsai, Wei-Jung Lin
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Publication number: 20170287779Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.Type: ApplicationFiled: June 20, 2017Publication date: October 5, 2017Inventors: Chun-Hsien Huang, Hong-Mao Lee, Hsien-Lung Yang, Yu-Kai Chen, Wei-Jung Lin
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Patent number: 9735107Abstract: A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.Type: GrantFiled: March 3, 2016Date of Patent: August 15, 2017Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Hong-Mao Lee, Huicheng Chang, Chia-Han Lai, Chi-Hsuan Ni, Cheng-Tung Lin, Huang-Yi Huang, Chi-Yuan Chen, Li-Ting Wang, Teng-Chun Tsai, Wei-Jung Lin
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Publication number: 20170221710Abstract: Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.Type: ApplicationFiled: April 17, 2017Publication date: August 3, 2017Inventors: Chi-Yuan Chen, Li-Ting Wang, Teng-Chun Tsai, Chun-I Tsai, Wei-Jung Lin, Huang-Yi Huang, Cheng-Tung Lin, Hong-Mao Lee
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Publication number: 20170213720Abstract: Methods of forming conductive structures and the conductive structures are disclosed. A method includes forming an opening in a dielectric layer over a substrate, performing a cleaning process on the dielectric layer with the opening, forming a nucleation layer in the opening, etching the nucleation layer in the opening, and forming a conductive material in the opening and on the nucleation layer after the etching. An upper portion of the opening is distal from the substrate, and a lower portion of the opening is proximate the substrate. After the etching, a thickness of an upper portion of the nucleation layer in the upper portion of the opening is less than a thickness of a lower portion of the nucleation layer in the lower portion of the opening.Type: ApplicationFiled: April 6, 2017Publication date: July 27, 2017Inventors: Chun-I Tsai, Chi-Yuan Chen, Wei-Jung Lin, Chia-Han Lai
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Patent number: 9711402Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a source/drain feature over a substrate, forming a dielectric layer over the source/drain feature, forming a contact trench through the dielectric layer to expose the source/drain feature, depositing a titanium nitride (TiN) layer by a first atomic layer deposition (ALD) process in the contact trench and depositing a cobalt layer over the TiN layer in the contact trench.Type: GrantFiled: March 8, 2016Date of Patent: July 18, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Hsien Huang, Hong-Mao Lee, Hsien-Lung Yang, Yu-Kai Chen, Wei-Jung Lin
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Patent number: 9624576Abstract: Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.Type: GrantFiled: December 17, 2013Date of Patent: April 18, 2017Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chi-Yuan Chen, Li-Ting Wang, Teng-Chun Tsai, Chun-I Tsai, Wei-Jung Lin, Huang-Yi Huang, Cheng-Tung Lin, Hong-Mao Lee
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Patent number: 9627313Abstract: Methods of forming conductive structures and the conductive structures are disclosed. A method includes forming an opening in a dielectric layer over a substrate, performing a cleaning process on the dielectric layer with the opening, forming a nucleation layer in the opening, etching the nucleation layer in the opening, and forming a conductive material in the opening and on the nucleation layer after the etching. An upper portion of the opening is distal from the substrate, and a lower portion of the opening is proximate the substrate. After the etching, a thickness of an upper portion of the nucleation layer in the upper portion of the opening is less than a thickness of a lower portion of the nucleation layer in the lower portion of the opening.Type: GrantFiled: January 25, 2016Date of Patent: April 18, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-I Tsai, Chi-Yuan Chen, Wei-Jung Lin, Chia-Han Lai
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Patent number: 9589892Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate, a dielectric layer over the contact layer, a silicide layer over the exposed portion of the contact layer, a barrier layer along sidewalls of the opening, an alloy layer over the barrier layer, a glue layer over the alloy layer, and a conductive plug over the glue layer, wherein the dielectric layer has an opening, and the opening exposes a portion of the contact layer.Type: GrantFiled: May 20, 2016Date of Patent: March 7, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Hung Lin, Mei-Hui Fu, Wei-Jung Lin, You-Hua Chou, Chia-Lin Hsu, Hon-Lin Huang, Shih-Chi Lin
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Patent number: 9520327Abstract: Methods for forming electrical contacts are provided. First and second FETs are formed over a semiconductor substrate. Openings are etched in a dielectric layer formed over the substrate, where the openings extend to source and drain regions of the FETs. A hard mask is formed over the source and drain regions of FETs. A first portion of the hard mask is removed, where the first portion is formed over the source and drain regions of the first FET. First silicide layers are formed over the source and drain regions of the first FET. A second portion of the hard mask is removed, where the second portion is formed over the source and drain regions of the second FET. Second silicide layers are formed over the source and drain regions of the second FET. A metal layer is deposited within the openings to fill the openings.Type: GrantFiled: October 15, 2015Date of Patent: December 13, 2016Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chun-Wen Nieh, Hung-Chang Hsu, Wei-Jung Lin, Yan-Ming Tsai, Chen-Ming Lee, Mei-Yun Wang
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Publication number: 20160268192Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate, a dielectric layer over the contact layer, a silicide layer over the exposed portion of the contact layer, a barrier layer along sidewalls of the opening, an alloy layer over the barrier layer, a glue layer over the alloy layer, and a conductive plug over the glue layer, wherein the dielectric layer has an opening, and the opening exposes a portion of the contact layer.Type: ApplicationFiled: May 20, 2016Publication date: September 15, 2016Inventors: Yu-Hung Lin, Mei-Hui Fu, Wei-Jung Lin, You-Hua Chou, Chia-Lin Hsu, Hon-Lin Huang, Shih-Chi Lin